World's Best Scientists 2026 revealed!
Shizuo Fujita

Shizuo Fujita

D-Index & Metrics

Materials Science

D-Index
67
Citations
16843
World Ranking
5089
National Ranking
244

Shizuo Fujita publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Shizuo Fujita sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 479 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Shizuo Fujita D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Shizuo Fujita sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 67 D-Index — 61st percentile

61% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Shizuo Fujita is affiliated with Kyoto University in Japan, where their research primarily focuses on the field of Materials Science. Within this broad discipline, their work is particularly concentrated in several subfields, including Materials Chemistry, Electronic, Optical and Magnetic Materials, Renewable Energy, Sustainability and the Environment, Electrical and Electronic Engineering, and Condensed Matter Physics.

The scientist's research topics cover areas such as ZnO doping and properties, Ga2O3 and related materials, Advanced Photocatalysis Techniques, Electronic and Structural Properties of Oxides, Gas Sensing Nanomaterials and Sensors, Magnesium Oxide Properties and Applications, and GaN-based semiconductor devices and materials.

Fujita has contributed to numerous peer-reviewed publications, with recurrent appearances in several scientific journals. Their frequent publication venues include the Japanese Journal of Applied Physics, Journal of Applied Physics, Applied Physics Express, physica status solidi (b), and the Journal of the Society of Materials Science Japan.

Recent papers in their portfolio highlight ongoing advances in the study of gallium oxide and its semiconductor properties. Notable works include:

  • "Ultra-wide bandgap corundum-structured p-type α-(Ir,Ga)2O3 alloys for α-Ga2O3 electronics" (2021, Applied Physics Letters)
  • "Prospects for phase engineering of semi-stable Ga2O3 semiconductor thin films using mist chemical vapor deposition" (2022, Journal of Applied Physics)
  • "Thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates via mist-CVD" (2020, AIP Advances)
  • "Progress in α-Ga2O3 for practical device applications" (2023, Japanese Journal of Applied Physics)
  • "Initial nucleation scheme of Ga 2 O 3 on (0001) sapphire by mist CVD for the growth of α -phase" (2021, Japanese Journal of Applied Physics)

Collaborations play a significant role in Fujita's research. Frequent co-authors include Kentaro Kaneko, Takeyoshi Onuma, Tomohiro Yamaguchi, Yuichi Ota, and Tohru Honda, with co-authorship counts ranging from 9 to 25 publications.

Best Publications

  • Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

    Yukio Narukawa;Yoichi Kawakami;Mitsuru Funato;Shizuo Fujita

  • Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors

    Takayoshi Oshima;Takeya Okuno;Shizuo Fujita

  • Recombination dynamics of localized excitons in In 0.20 Ga 0.80 N- In 0.05 Ga 0.95 N multiple quantum wells

    Yukio Narukawa;Yoichi Kawakami;Shizuo Fujita;Shigeo Fujita

  • Heteroepitaxy of Corundum-Structured α-Ga2O3 Thin Films on α-Al2O3 Substrates by Ultrasonic Mist Chemical Vapor Deposition

    Daisuke Shinohara;Shizuo Fujita

  • Carrier concentration dependence of band gap shift in n-type ZnO:Al films

    J. G. Lu;S. Fujita;T. Kawaharamura;H. Nishinaka

  • Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3 Substrates

    Takayoshi Oshima;Takeya Okuno;Naoki Arai;Norihito Suzuki

  • Wide-bandgap semiconductor materials: For their full bloom†

    Shizuo Fujita

  • Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates

    W. C. Hughes;W. H. Rowland;M. A. L. Johnson;Shizuo Fujita

  • MBE growth and properties of ZnO on sapphire and SiC substrates

    M. A. L. Johnson;Shizuo Fujita;W. H. Rowland;W. C. Hughes

  • ZnO-based thin films synthesized by atmospheric pressure mist chemical vapor deposition

    J.G. Lu;T. Kawaharamura;H. Nishinaka;Y. Kamada

  • Self-organized ZnO quantum dots on SiO2/Si substrates by metalorganic chemical vapor deposition

    Sang-Woo Kim;Shizuo Fujita;Shigeo Fujita

  • Flame Detection by a β-Ga2O3-Based Sensor

    Takayoshi Oshima;Takeya Okuno;Naoki Arai;Norihito Suzuki

  • Molecular Beam Epitaxy of High Magnesium Content Single-Phase Wurzite MgxZn1-xO Alloys (x≃ 0.5) and Their Application to Solar-Blind Region Photodetectors

    Tsuyoshi Takagi;Hiroshi Tanaka;Shizuo Fujita;Shigeo Fujita

  • Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy

    Takayoshi Oshima;Naoki Arai;Norihito Suzuki;Shigeo Ohira

  • High electron concentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapid-thermal annealing

    Kyoung Kook Kim;Shigeru Niki;Jin Yong Oh;June O. Song

  • Dangling Bonds in Memory‐Quality Silicon Nitride Films

    Shizuo Fujita;Akio Sasaki

  • beta-Al2xGa2-2xO3 Thin Film Growth by Molecular Beam Epitaxy

    Takayoshi Oshima;Takeya Okuno;Naoki Arai;Yasushi Kobayashi

  • ZnO nanowires with high aspect ratios grown by metalorganic chemical vapor deposition using gold nanoparticles

    Sang-Woo Kim;Shizuo Fujita;Shigeo Fujita

  • Growth and Band Gap Control of Corundum-Structured $lpha$-(AlGa)$_{2}$O$_{3}$ Thin Films on Sapphire by Spray-Assisted Mist Chemical Vapor Deposition

    Hiroshi Ito;Kentaro Kaneko;Shizuo Fujita

  • Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films

    Shizuo Fujita;Kentaro Kaneko

  • Evaluation of Misfit Relaxation in $lpha$-Ga$_{2}$O$_{3}$ Epitaxial Growth on $lpha$-Al$_{2}$O$_{3}$ Substrate

    Kentaro Kaneko;Hitoshi Kawanowa;Hiroshi Ito;Shizuo Fujita

Frequent Co-Authors

Yoichi Kawakami
Yoichi Kawakami Kyoto University
Sang-Woo Kim
Sang-Woo Kim Yonsei University
Jun Suda
Jun Suda Nagoya University
Yukio Narukawa
Yukio Narukawa Nichia Corporation (Japan)
Jianguo Lu
Jianguo Lu Zhejiang University
Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
Yasuaki Masumoto
Yasuaki Masumoto University of Tsukuba
Makoto Kasu
Makoto Kasu Saga University
Dae Ho Yoon
Dae Ho Yoon Sungkyunkwan University
Han-Ki Kim
Han-Ki Kim Sungkyunkwan University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Shizuo Fujita

Trending Scientists