World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
68
Citations
20630
World Ranking
1006
National Ranking
24

Materials Science

D-Index
73
Citations
23023
World Ranking
3782
National Ranking
162

Overview

Akito Kuramata is affiliated with Novel Crystal Technology, Inc in Japan. Their research focuses primarily on materials science, with extensive work in materials chemistry and electronic, optical, and magnetic materials. They also contribute to renewable energy, sustainability, and electrical and electronic engineering, along with condensed matter physics.

The main topics of Kuramata's research encompass:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • Electronic and Structural Properties of Oxides
  • Advanced Photocatalysis Techniques
  • Semiconductor materials and devices
  • GaN-based semiconductor devices and materials
  • Perovskite Materials and Applications

The scientist has published extensively, with notable recent papers including:

  • β-Gallium oxide power electronics, 2022, APL Materials
  • Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio, 2021, Applied Physics Express
  • Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes, 2021, Applied Physics Letters
  • Origin of reverse leakage current path in edge-defined film-fed growth (001) β-Ga2O3 Schottky barrier diodes observed by high-sensitive emission microscopy, 2020, Applied Physics Letters
  • Two-inch Fe-doped β-Ga2O3 (010) substrates prepared using vertical Bridgman method, 2023, Japanese Journal of Applied Physics

Frequent co-authors in Kuramata's publications include:

  • Kohei Sasaki (42 collaborations)
  • Marko J. Tadjer (15 collaborations)
  • Karl D. Hobart (10 collaborations)
  • Yongzhao Yao (10 collaborations)
  • Yoshihiro Sugawara (10 collaborations)

Kuramata's work appears regularly in several key publication venues, including:

  • Applied Physics Letters (13 publications)
  • Japanese Journal of Applied Physics (9 publications)
  • Applied Physics Express (5 publications)
  • APL Materials (3 publications)
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (3 publications)

The scientist's research broadly contributes to the understanding and development of semiconductor materials, especially focusing on gallium oxide and related oxides, with applications relevant to power electronics, device fabrication, and materials chemistry. Their work spans experimental investigation and material growth techniques, such as vertical Bridgman crystal growth, to improve substrate quality for electronic device applications.

Best Publications

  • Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

    Masataka Higashiwaki;Kohei Sasaki;Akito Kuramata;Takekazu Masui

  • Recent progress in Ga2O3 power devices

    Masataka Higashiwaki;Kohei Sasaki;Hisashi Murakami;Yoshinao Kumagai

  • High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth

    Akito Kuramata;Kimiyoshi Koshi;Shinya Watanabe;Yu Yamaoka

  • Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

    Masataka Higashiwaki;Kohei Sasaki;Takafumi Kamimura;Man Hoi Wong

  • Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

    Kohei Sasaki;Akito Kuramata;Takekazu Masui;Encarnación G. Víllora

  • Development of gallium oxide power devices

    Masataka Higashiwaki;Kohei Sasaki;Akito Kuramata;Takekazu Masui

  • 1-kV vertical Ga2O3 field-plated Schottky barrier diodes

    Keita Konishi;Ken Goto;Hisashi Murakami;Yoshinao Kumagai

  • Anisotropic thermal conductivity in single crystal β-gallium oxide

    Zhi Guo;Amit Verma;Xufei Wu;Fangyuan Sun

  • Perspective—Opportunities and Future Directions for Ga2O3

    Michael A. Mastro;Akito Kuramata;Jacob Calkins;Jihyun Kim

  • $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $eta$ – $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

    K. Sasaki;M. Higashiwaki;A. Kuramata;T. Masui

  • Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy

    Hisashi Murakami;Kazushiro Nomura;Ken Goto;Kohei Sasaki

  • Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

    Masataka Higashiwaki;Keita Konishi;Kohei Sasaki;Ken Goto

  • Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts

    Kohei Sasaki;Masataka Higashiwaki;Akito Kuramata;Takekazu Masui

  • MBE grown Ga2O3 and its power device applications

    Kohei Sasaki;Masataka Higashiwaki;Masataka Higashiwaki;Akito Kuramata;Takekazu Masui

  • Enhancement-Mode Ga 2 O 3 Vertical Transistors With Breakdown Voltage >1 kV

    Zongyang Hu;Kazuki Nomoto;Wenshen Li;Nicholas Tanen

  • Biaxial strain dependence of exciton resonance energies in wurtzite GaN

    Amane Shikanai;Takashi Azuhata;Takayuki Sota;Shigefusa Chichibu

  • State-of-the-art technologies of gallium oxide power devices

    Masataka Higashiwaki;Akito Kuramata;Hisashi Murakami;Yoshinao Kumagai

  • Current status of Ga2O3 power devices

    Masataka Higashiwaki;Hisashi Murakami;Yoshinao Kumagai;Akito Kuramata

  • An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots

    T. Akiyama;M. Ekawa;M. Sugawara;K. Kawaguchi

  • Anisotropic Thermal Conductivity in Single Crystal beta-Gallium Oxide

    Zhi Guo;Amit Verma;Fangyuan Sun;Austin Hickman

Frequent Co-Authors

Kohei Sasaki
Kohei Sasaki Novel Crystal Technology, Inc
Shigenobu Yamakoshi
Shigenobu Yamakoshi Fujitsu (Japan)
Masataka Higashiwaki
Masataka Higashiwaki Osaka Metropolitan University
Fan Ren
Fan Ren University of Florida
Yoshinao Kumagai
Yoshinao Kumagai Tokyo University of Agriculture and Technology
Man Hoi Wong
Man Hoi Wong Hong Kong University of Science and Technology
Makoto Kasu
Makoto Kasu Saga University
Stephen J. Pearton
Stephen J. Pearton University of Florida
Bo Monemar
Bo Monemar Linköping University
Marko J. Tadjer
Marko J. Tadjer United States Naval Research Laboratory

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