World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
49
Citations
8088
World Ranking
2981
National Ranking
1117

Hongping Zhao publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Hongping Zhao sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 224 publications — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Hongping Zhao D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Hongping Zhao sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 49 D-Index — 58th percentile

58% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Hongping Zhao is affiliated with The Ohio State University in the United States and conducts research primarily in the fields of Materials Science and Engineering. Their scholarly work focuses on several specialized subfields, including Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment, and Condensed Matter Physics.

Their research topics encompass a range of areas related to semiconductor and oxide materials. Key topics include:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • Advanced Photocatalysis Techniques
  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Electronic and Structural Properties of Oxides
  • Metal and Thin Film Mechanics

Zhao has published a significant number of papers across noteworthy venues. Frequent publication venues include:

  • Applied Physics Letters
  • arXiv (Cornell University)
  • APL Materials
  • Journal of Applied Physics
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Among recent publications are the following papers:

  • "Probing Charge Transport and Background Doping in Metal-Organic Chemical Vapor Deposition-Grown (010) β-Ga2O3", 2020, published in physica status solidi (RRL) - Rapid Research Letters
  • "Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films", 2020, published in APL Materials
  • "Improved Prediction of Aqueous Solubility of Novel Compounds by Going Deeper With Deep Learning", 2020, published in Frontiers in Oncology
  • "MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1-x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates", 2020, published in Crystal Growth & Design
  • "High-Mobility MOCVD β-Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium", 2022, published in Crystal Growth & Design

Collaborative efforts frequently involve these coauthors:

  • A F M Anhar Uddin Bhuiyan
  • Jinwoo Hwang
  • Zixuan Feng
  • Lingyu Meng
  • Vijay Gopal Thirupakuzi Vangipuram

Best Publications

  • Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

    Hongping Zhao;Guangyu Liu;Jing Zhang;Jonathan D Poplawsky

  • MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties

    Zixuan Feng;A F M Anhar Uddin Bhuiyan;Rezaul Karim;Hongping Zhao

  • Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

    Hongping Zhao;R.A. Arif;Yik-Khoon Ee;N. Tansu

  • Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

    Hongping Zhao;Guangyu Liu;Ronald A. Arif;Nelson Tansu

  • Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

    Subrina Rafique;Lu Han;Marko J. Tadjer;Jaime A. Freitas

  • Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes

    Hongping Zhao;Guangyu Liu;Jing Zhang;R. A. Arif

  • Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

    Hongping Zhao;Guangyu Liu;Nelson Tansu

  • Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

    Jing Zhang;Hongping Zhao;Nelson Tansu

  • Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

    Hongping Zhao;Guangyu Liu;Xiao-Hang Li;G. S. Huang

  • III-Nitride Photonics

    Nelson Tansu;Hongping Zhao;Guangyu Liu;Xiao-Hang Li

  • Optical signatures of deep level defects in Ga2O3

    Hantian Gao;Shreyas Muralidharan;Nicholas Pronin;Rezaul Karim

  • Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

    R.A. Arif;Hongping Zhao;Yik-Khoon Ee;N. Tansu

  • Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes

    Jing Zhang;Hongping Zhao;Nelson Tansu

  • Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses

    Yik-Khoon Ee;P. Kumnorkaew;R.A. Arif;Hua Tong

  • Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm

    Hongping Zhao;R.A. Arif;N. Tansu

  • Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes

    Chandan Joishi;Chandan Joishi;Subrina Rafique;Subrina Rafique;Zhanbo Xia;Lu Han

  • Type-II InGaN-GaNAs quantum wells for lasers applications

    Ronald A. Arif;Hongping Zhao;Nelson Tansu

  • Optical gain characteristics of staggered InGaN quantum wells lasers

    Hongping Zhao;Nelson Tansu

  • Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule

    Paul C. Quayle;Eric W. Blanton;Atchara Punya;Atchara Punya;Grant T. Junno

  • Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes

    Peng Zhao;Hongping Zhao

  • Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers

    Hongping Zhao;Ronald A. Arif;Nelson Tansu

Frequent Co-Authors

Nelson Tansu
Nelson Tansu University of Adelaide
Jinwoo Hwang
Jinwoo Hwang The Ohio State University
Siddharth Rajan
Siddharth Rajan The Ohio State University
Steven A. Ringel
Steven A. Ringel The Ohio State University
Jonathan D. Poplawsky
Jonathan D. Poplawsky Oak Ridge National Laboratory
Aaron R. Arehart
Aaron R. Arehart The Ohio State University
Philip X.-L. Feng
Philip X.-L. Feng University of Florida
Christian A. Zorman
Christian A. Zorman Case Western Reserve University
Wei Lei
Wei Lei Southeast University
Leonard J. Brillson
Leonard J. Brillson The Ohio State University

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Related Online Degrees & Career Pathways

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Finally, careers in this field often suit individuals who appreciate focused, technical work environments. Check out “good jobs for introverts” to understand how roles in engineering can align with introverted strengths, such as problem-solving and independent project work.

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