World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
49
Citations
8088
World Ranking
2981
National Ranking
1116

Overview

Hongping Zhao is affiliated with The Ohio State University in the United States and conducts research primarily in the fields of Materials Science and Engineering. Their scholarly work focuses on several specialized subfields, including Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment, and Condensed Matter Physics.

Their research topics encompass a range of areas related to semiconductor and oxide materials. Key topics include:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • Advanced Photocatalysis Techniques
  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Electronic and Structural Properties of Oxides
  • Metal and Thin Film Mechanics

Zhao has published a significant number of papers across noteworthy venues. Frequent publication venues include:

  • Applied Physics Letters
  • arXiv (Cornell University)
  • APL Materials
  • Journal of Applied Physics
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Among recent publications are the following papers:

  • "Probing Charge Transport and Background Doping in Metal-Organic Chemical Vapor Deposition-Grown (010) β-Ga2O3", 2020, published in physica status solidi (RRL) - Rapid Research Letters
  • "Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films", 2020, published in APL Materials
  • "Improved Prediction of Aqueous Solubility of Novel Compounds by Going Deeper With Deep Learning", 2020, published in Frontiers in Oncology
  • "MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1-x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates", 2020, published in Crystal Growth & Design
  • "High-Mobility MOCVD β-Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium", 2022, published in Crystal Growth & Design

Collaborative efforts frequently involve these coauthors:

  • A F M Anhar Uddin Bhuiyan
  • Jinwoo Hwang
  • Zixuan Feng
  • Lingyu Meng
  • Vijay Gopal Thirupakuzi Vangipuram

Best Publications

  • Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

    Hongping Zhao;Guangyu Liu;Jing Zhang;Jonathan D Poplawsky

  • MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties

    Zixuan Feng;A F M Anhar Uddin Bhuiyan;Rezaul Karim;Hongping Zhao

  • Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

    Hongping Zhao;R.A. Arif;Yik-Khoon Ee;N. Tansu

  • Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

    Hongping Zhao;Guangyu Liu;Ronald A. Arif;Nelson Tansu

  • Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

    Subrina Rafique;Lu Han;Marko J. Tadjer;Jaime A. Freitas

  • Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes

    Hongping Zhao;Guangyu Liu;Jing Zhang;R. A. Arif

  • Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

    Hongping Zhao;Guangyu Liu;Nelson Tansu

  • Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

    Jing Zhang;Hongping Zhao;Nelson Tansu

  • Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

    Hongping Zhao;Guangyu Liu;Xiao-Hang Li;G. S. Huang

  • III-Nitride Photonics

    Nelson Tansu;Hongping Zhao;Guangyu Liu;Xiao-Hang Li

  • Optical signatures of deep level defects in Ga2O3

    Hantian Gao;Shreyas Muralidharan;Nicholas Pronin;Rezaul Karim

  • Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

    R.A. Arif;Hongping Zhao;Yik-Khoon Ee;N. Tansu

  • Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes

    Jing Zhang;Hongping Zhao;Nelson Tansu

  • Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses

    Yik-Khoon Ee;P. Kumnorkaew;R.A. Arif;Hua Tong

  • Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm

    Hongping Zhao;R.A. Arif;N. Tansu

  • Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes

    Chandan Joishi;Chandan Joishi;Subrina Rafique;Subrina Rafique;Zhanbo Xia;Lu Han

  • Type-II InGaN-GaNAs quantum wells for lasers applications

    Ronald A. Arif;Hongping Zhao;Nelson Tansu

  • Optical gain characteristics of staggered InGaN quantum wells lasers

    Hongping Zhao;Nelson Tansu

  • Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule

    Paul C. Quayle;Eric W. Blanton;Atchara Punya;Atchara Punya;Grant T. Junno

  • Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes

    Peng Zhao;Hongping Zhao

  • Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers

    Hongping Zhao;Ronald A. Arif;Nelson Tansu

Frequent Co-Authors

Nelson Tansu
Nelson Tansu University of Adelaide
Jinwoo Hwang
Jinwoo Hwang The Ohio State University
Siddharth Rajan
Siddharth Rajan The Ohio State University
Jonathan D. Poplawsky
Jonathan D. Poplawsky Oak Ridge National Laboratory
Steven A. Ringel
Steven A. Ringel The Ohio State University
Aaron R. Arehart
Aaron R. Arehart The Ohio State University
Christian A. Zorman
Christian A. Zorman Case Western Reserve University
Philip X.-L. Feng
Philip X.-L. Feng University of Florida
Leonard J. Brillson
Leonard J. Brillson The Ohio State University
Jacob B. Khurgin
Jacob B. Khurgin Johns Hopkins University

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