2026 Leonard J. Brillson: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	61	6769	6541	1704	1583	430	13734

Leonard J. Brillson publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Leonard J. Brillson sits on this spectrum.

50 publications 1,163+

This scientist: 430 publications — 80th percentile

80% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Leonard J. Brillson D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Leonard J. Brillson sits on this spectrum.

40 D-Index 165+

This scientist: 61 D-Index — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

2013 - Fellow of the Materials Research Society
2001 - Fellow of the American Association for the Advancement of Science (AAAS)
2000 - IEEE Fellow For contributions to the understanding and control of semiconductor interfaces and electrical contacts by atomic-scale techniques.
1984 - Fellow of American Physical Society (APS) Citation For contributions to the physics and chemistry of metalsemiconductor interferes which have provided insight into the electronic properties of the interfaces

Overview

Leonard J. Brillson is affiliated with The Ohio State University in the United States. Their research spans primarily the field of Materials Science, with a strong focus on Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics, and Renewable Energy, Sustainability and the Environment.

The topics of their work concentrate on the following areas:

ZnO doping and properties
Ga2O3 and related materials
Electronic and Structural Properties of Oxides
Semiconductor materials and devices
Advanced Photocatalysis Techniques
GaN-based semiconductor devices and materials
Transition Metal Oxide Nanomaterials

Brillson has authored publications in various scientific venues, with notable frequencies in:

Journal of materials research/Pratt's guide to venture capital sources (9 publications)
Journal of Applied Physics (5 publications)
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (4 publications)
MRS Communications (4 publications)
Chemistry of Materials (2 publications)

Some recent papers illustrating the scope of Brillson's work include:

"Strain-driven disproportionation at a correlated oxide metal-insulator transition," 2020, Physical Review B
"Elucidating Structural Transformations in Li_xV₂O₅ Electrochromic Thin Films by Multimodal Spectroscopies," 2020, Chemistry of Materials
"Deep level defects and cation sublattice disorder in ZnGeN2," 2020, Journal of Applied Physics
"Neutron irradiation and forming gas anneal impact on β-Ga₂O₃ deep level defects," 2020, Journal of Physics D Applied Physics
"Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments," 2020, Applied Physics Letters

Frequent collaborators in Brillson's research include Griselda Bonilla, Kristen Brosnan, Coray M. Colina, Catherine Dubourdieu, and Sarah Heilshorn, each contributing to a substantial number of joint publications.

Throughout their career, Brillson has been recognized by several professional societies and holds fellowships that highlight contributions in their field:

Fellow of the Materials Research Society (2013)
Fellow of the American Association for the Advancement of Science (AAAS) (2001)
IEEE Fellow (2000) for contributions to the understanding and control of semiconductor interfaces and electrical contacts by atomic-scale techniques
Fellow of the American Physical Society (APS) (1984) for work on the physics and chemistry of metal-semiconductor interfaces providing insight into the electronic properties of the interfaces

Best Publications

The structure and properties of metal-semiconductor interfaces

L.J. Brillson

1135
Citations
ZnO Schottky barriers and Ohmic contacts

Leonard J. Brillson;Yicheng Lu

791
Citations
Transition in Schottky Barrier Formation with Chemical Reactivity

L. J. Brillson

320
Citations
Role of Near-Surface States in Ohmic-Schottky Conversion of Au Contacts to ZnO

H. L. Mosbacker;Y. M. Strzhemechny;B. D. White;P. E. Smith

296
Citations
Self-compensation in semiconductors: the Zn-vacancy in Ga-doped ZnO

David C. Look;K. D. Leedy;L. Vines;B. G. Svensson

232
Citations
Characterization of electronic structure and defect states of thin epitaxial BiFeO3 films by UV-visible absorption and cathodoluminescence spectroscopies

A. J. Hauser;J. Zhang;L. Mier;R. A. Ricciardo

207
Citations
Direct observation of a two-dimensional hole gas at oxide interfaces.

H. Lee;N. Campbell;J. Lee;T. J. Asel

206
Citations
Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors

Xinwen Hu;A.P. Karmarkar;Bongim Jun;D.M. Fleetwood

196
Citations
Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation

Robert S. Okojie;Ming Xhang;Pirouz Pirouz;Sergey Tumakha

192
Citations
Dominant effect of near-interface native point defects on ZnO Schottky barriers

L. J. Brillson;H. L. Mosbacker;M. J. Hetzer;Y. Strzhemechny

190
Citations
Remote hydrogen plasma doping of single crystal ZnO

Yuri M. Strzhemechny;Howard L. Mosbacker;David C. Look;Donald C. Reynolds

181
Citations
Electronic Structure of Tantalum Oxynitride Perovskite Photocatalysts

Snjezana Balaz;Spencer H. Porter;Patrick M. Woodward;Leonard J. Brillson

174
Citations
Optical signatures of deep level defects in Ga2O3

Hantian Gao;Shreyas Muralidharan;Nicholas Pronin;Rezaul Karim

172
Citations
Contacts to Semiconductors: Fundamentals and Technology

Leonard J. Brillson

169
Citations
Direct observation of copper depletion and potential changes at copper indium gallium diselenide grain boundaries

M. J. Hetzer;Y. M. Strzhemechny;M. Gao;M. A. Contreras

167
Citations
Surfaces and Interfaces of Electronic Materials

Leonard J Brillson

157
Citations
Vacancy defect and defect cluster energetics in ion-implanted ZnO

Yufeng Dong;Filip Tuomisto;B.G. Svensson;A.Yu. Kuznetsov

155
Citations
Electron energy loss spectroscopy and the optical properties of polymethylmethacrylate from 1 to 300 eV

J. J. Ritsko;L. J. Brillson;R. W. Bigelow;T. J. Fabish

146
Citations
Chemical reaction and charge redistribution at metal–semiconductor interfaces

L. J. Brillson

140
Citations
Chemically induced charge redistribution at Al-GaAs interfaces

L.J. Brillson;R.Z. Bachrach;R.S. Bauer;J. McMenamin

135
Citations