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Leonard J. Brillson

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 61 6769 6541 1704 1583 430 13734

Leonard J. Brillson publications per year

The chart shows the history of publications by Leonard J. Brillson between 1971 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Leonard J. Brillson published across 56 years, from 1971 to 2026, averaging 8.1 papers a year. Output peaked at 30 publications in 2010. 5 of the 455 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1971 to 2026. Vertical axis: number of publications, 0 to 30. Peak 30 publications in 2010. 1971: 2 publications 1972: 2 publications 1973: 0 publications 1974: 3 publications 1975: 2 publications 1976: 3 publications 1977: 3 publications 1978: 5 publications 1979: 2 publications 1980: 10 publications 1981: 13 publications 1982: 11 publications 1983: 7 publications 1984: 6 publications 1985: 6 publications 1986: 10 publications 1987: 5 publications 1988: 12 publications 1989: 10 publications 1990: 10 publications 1991: 4 publications 1992: 10 publications 1993: 6 publications 1994: 9 publications 1995: 7 publications 1996: 3 publications 1997: 1 publication 1998: 7 publications 1999: 11 publications 2000: 10 publications 2001: 11 publications 2002: 19 publications 2003: 15 publications 2004: 9 publications 2005: 16 publications 2006: 11 publications 2007: 10 publications 2008: 15 publications 2009: 14 publications 2010: 30 publications 2011: 9 publications 2012: 8 publications 2013: 13 publications 2014: 2 publications 2015: 6 publications 2016: 22 publications 2017: 6 publications 2018: 9 publications 2019: 5 publications 2020: 14 publications 2021: 4 publications 2022: 4 publications 2023: 4 publications 2024: 4 publications 2025: 3 publications 2026: 2 publications
1971 2026

455 publications in total across all disciplines

View publications per year as a table
Leonard J. Brillson: publications per year, 1971 to 2026
Year Publications
1971 2
1972 2
1973 0
1974 3
1975 2
1976 3
1977 3
1978 5
1979 2
1980 10
1981 13
1982 11
1983 7
1984 6
1985 6
1986 10
1987 5
1988 12
1989 10
1990 10
1991 4
1992 10
1993 6
1994 9
1995 7
1996 3
1997 1
1998 7
1999 11
2000 10
2001 11
2002 19
2003 15
2004 9
2005 16
2006 11
2007 10
2008 15
2009 14
2010 30
2011 9
2012 8
2013 13
2014 2
2015 6
2016 22
2017 6
2018 9
2019 5
2020 14
2021 4
2022 4
2023 4
2024 4
2025 3
2026 2
Total 455
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Leonard J. Brillson publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Leonard J. Brillson sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 430–449 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 430 publications — 80th percentile

80% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246 430
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
Download as CSV

Leonard J. Brillson D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Leonard J. Brillson sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 60–61 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 61 D-Index — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587 61
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Research.com Recognitions

  • 2013 - Fellow of the Materials Research Society
  • 2001 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 2000 - IEEE Fellow For contributions to the understanding and control of semiconductor interfaces and electrical contacts by atomic-scale techniques.
  • 1984 - Fellow of American Physical Society (APS) Citation For contributions to the physics and chemistry of metalsemiconductor interferes which have provided insight into the electronic properties of the interfaces

Overview

Leonard J. Brillson is affiliated with The Ohio State University in the United States. Their research spans primarily the field of Materials Science, with a strong focus on Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics, and Renewable Energy, Sustainability and the Environment.

The topics of their work concentrate on the following areas:

  • ZnO doping and properties
  • Ga2O3 and related materials
  • Electronic and Structural Properties of Oxides
  • Semiconductor materials and devices
  • Advanced Photocatalysis Techniques
  • GaN-based semiconductor devices and materials
  • Transition Metal Oxide Nanomaterials

Brillson has authored publications in various scientific venues, with notable frequencies in:

  • Journal of materials research/Pratt's guide to venture capital sources (9 publications)
  • Journal of Applied Physics (5 publications)
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (4 publications)
  • MRS Communications (4 publications)
  • Chemistry of Materials (2 publications)

Some recent papers illustrating the scope of Brillson's work include:

  • "Strain-driven disproportionation at a correlated oxide metal-insulator transition," 2020, Physical Review B
  • "Elucidating Structural Transformations in LixV2O5 Electrochromic Thin Films by Multimodal Spectroscopies," 2020, Chemistry of Materials
  • "Deep level defects and cation sublattice disorder in ZnGeN2," 2020, Journal of Applied Physics
  • "Neutron irradiation and forming gas anneal impact on β-Ga2O3 deep level defects," 2020, Journal of Physics D Applied Physics
  • "Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments," 2020, Applied Physics Letters

Frequent collaborators in Brillson's research include Griselda Bonilla, Kristen Brosnan, Coray M. Colina, Catherine Dubourdieu, and Sarah Heilshorn, each contributing to a substantial number of joint publications.

Throughout their career, Brillson has been recognized by several professional societies and holds fellowships that highlight contributions in their field:

  • Fellow of the Materials Research Society (2013)
  • Fellow of the American Association for the Advancement of Science (AAAS) (2001)
  • IEEE Fellow (2000) for contributions to the understanding and control of semiconductor interfaces and electrical contacts by atomic-scale techniques
  • Fellow of the American Physical Society (APS) (1984) for work on the physics and chemistry of metal-semiconductor interfaces providing insight into the electronic properties of the interfaces

Best Publications

  • The structure and properties of metal-semiconductor interfaces

    L.J. Brillson

  • ZnO Schottky barriers and Ohmic contacts

    Leonard J. Brillson;Yicheng Lu

  • Transition in Schottky Barrier Formation with Chemical Reactivity

    L. J. Brillson

  • Role of Near-Surface States in Ohmic-Schottky Conversion of Au Contacts to ZnO

    H. L. Mosbacker;Y. M. Strzhemechny;B. D. White;P. E. Smith

  • Self-compensation in semiconductors: the Zn-vacancy in Ga-doped ZnO

    David C. Look;K. D. Leedy;L. Vines;B. G. Svensson

  • Characterization of electronic structure and defect states of thin epitaxial BiFeO3 films by UV-visible absorption and cathodoluminescence spectroscopies

    A. J. Hauser;J. Zhang;L. Mier;R. A. Ricciardo

  • Direct observation of a two-dimensional hole gas at oxide interfaces.

    H. Lee;N. Campbell;J. Lee;T. J. Asel

  • Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors

    Xinwen Hu;A.P. Karmarkar;Bongim Jun;D.M. Fleetwood

  • Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation

    Robert S. Okojie;Ming Xhang;Pirouz Pirouz;Sergey Tumakha

  • Dominant effect of near-interface native point defects on ZnO Schottky barriers

    L. J. Brillson;H. L. Mosbacker;M. J. Hetzer;Y. Strzhemechny

  • Remote hydrogen plasma doping of single crystal ZnO

    Yuri M. Strzhemechny;Howard L. Mosbacker;David C. Look;Donald C. Reynolds

  • Electronic Structure of Tantalum Oxynitride Perovskite Photocatalysts

    Snjezana Balaz;Spencer H. Porter;Patrick M. Woodward;Leonard J. Brillson

  • Optical signatures of deep level defects in Ga2O3

    Hantian Gao;Shreyas Muralidharan;Nicholas Pronin;Rezaul Karim

  • Contacts to Semiconductors: Fundamentals and Technology

    Leonard J. Brillson

  • Direct observation of copper depletion and potential changes at copper indium gallium diselenide grain boundaries

    M. J. Hetzer;Y. M. Strzhemechny;M. Gao;M. A. Contreras

  • Surfaces and Interfaces of Electronic Materials

    Leonard J Brillson

  • Vacancy defect and defect cluster energetics in ion-implanted ZnO

    Yufeng Dong;Filip Tuomisto;B.G. Svensson;A.Yu. Kuznetsov

  • Electron energy loss spectroscopy and the optical properties of polymethylmethacrylate from 1 to 300 eV

    J. J. Ritsko;L. J. Brillson;R. W. Bigelow;T. J. Fabish

  • Chemical reaction and charge redistribution at metal–semiconductor interfaces

    L. J. Brillson

  • Chemically induced charge redistribution at Al-GaAs interfaces

    L.J. Brillson;R.Z. Bachrach;R.S. Bauer;J. McMenamin

Frequent Co-Authors

David C. Look
David C. Look Wright State University
Jerry M. Woodall
Jerry M. Woodall University of California, Davis
William J. Schaff
William J. Schaff Cornell University
Giorgio Margaritondo
Giorgio Margaritondo École Polytechnique Fédérale de Lausanne
Roland Kawakami
Roland Kawakami The Ohio State University
Steven A. Ringel
Steven A. Ringel The Ohio State University
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Marius Grundmann
Marius Grundmann Leipzig University
Richard J. Molnar
Richard J. Molnar MIT
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University

External Links

Personal website of Leonard J. Brillson Google Scholar page

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Stephen J. Pearton

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Publications: 62

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W. E. Spicer

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Publications: 37

Ji Hyun Kim

Ji Hyun Kim

Seoul National University

Publications: 31

I. Lindau

I. Lindau

Stanford University

Publications: 29

A. Y. Polyakov

A. Y. Polyakov

National University of Science and Technology

Publications: 26

Zhong Lin Wang

Zhong Lin Wang

Georgia Institute of Technology

Publications: 26

Giorgio Margaritondo

Giorgio Margaritondo

École Polytechnique Fédérale de Lausanne

Publications: 26

Andreas Klein

Andreas Klein

Technical University of Darmstadt

Publications: 26

Wolfram Jaegermann

Wolfram Jaegermann

Technical University of Darmstadt

Publications: 25

Ronald D. Schrimpf

Ronald D. Schrimpf

Vanderbilt University

Publications: 24

David Cahen

David Cahen

Weizmann Institute of Science

Publications: 23

Daniel M. Fleetwood

Daniel M. Fleetwood

Vanderbilt University

Publications: 23

Antoine Kahn

Antoine Kahn

Princeton University

Publications: 22

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James S. Speck

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