D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 55 Citations 10,290 400 World Ranking 1359 National Ranking 618
Materials Science D-index 65 Citations 14,307 495 World Ranking 3319 National Ranking 1002

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optics
  • Optoelectronics

Jerry M. Woodall mainly investigates Optoelectronics, Condensed matter physics, Molecular beam epitaxy, Analytical chemistry and Fermi level. Jerry M. Woodall has included themes like Substrate and Optics in his Optoelectronics study. His Molecular beam epitaxy research incorporates themes from Crystal growth, Semiconductor laser theory, Thin film and Arsenic.

Jerry M. Woodall has researched Fermi level in several fields, including Ohmic contact and Work function. His Epitaxy research incorporates elements of Doping and Lattice constant. His Schottky barrier study combines topics from a wide range of disciplines, such as Transistor, Nanotechnology and Semiconductor.

His most cited work include:

  • Structure of GaAs(001) ( 2 × 4 ) − c ( 2 × 8 ) Determined by Scanning Tunneling Microscopy (390 citations)
  • Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy (384 citations)
  • Macroelectronics: Perspectives on Technology and Applications (328 citations)

What are the main themes of his work throughout his whole career to date?

Jerry M. Woodall mainly focuses on Optoelectronics, Semiconductor, Condensed matter physics, Molecular beam epitaxy and Doping. His research investigates the connection between Optoelectronics and topics such as Epitaxy that intersect with issues in Thin film. His work deals with themes such as Layer, Semiconductor device, Nanotechnology and Band gap, which intersect with Semiconductor.

Schottky barrier is closely connected to Fermi level in his research, which is encompassed under the umbrella topic of Condensed matter physics. His Molecular beam epitaxy research focuses on Analytical chemistry and how it relates to Annealing. His Doping research is multidisciplinary, incorporating elements of Schottky diode and Ohmic contact.

He most often published in these fields:

  • Optoelectronics (49.20%)
  • Semiconductor (19.25%)
  • Condensed matter physics (16.93%)

What were the highlights of his more recent work (between 2006-2020)?

  • Nanotechnology (10.87%)
  • Nanoelectromechanical systems (6.24%)
  • Nanoelectronics (6.42%)

In recent papers he was focusing on the following fields of study:

His scientific interests lie mostly in Nanotechnology, Nanoelectromechanical systems, Nanoelectronics, Outreach and Optoelectronics. His research integrates issues of Photonics and Engineering physics in his study of Nanotechnology. His studies deal with areas such as Molecular beam epitaxy, Epitaxy and Optics as well as Optoelectronics.

His work in Molecular beam epitaxy tackles topics such as Substrate which are related to areas like Gallium phosphide. His Epitaxy research is multidisciplinary, incorporating perspectives in Solid-state physics, Hall effect, Doping and Photoluminescence. His Schottky barrier research is multidisciplinary, relying on both Schottky diode, Semiconductor and Transfer printing.

Between 2006 and 2020, his most popular works were:

  • Liquid phase-enabled reaction of Al-Ga and Al-Ga-In-Sn alloys with water (129 citations)
  • Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric (58 citations)
  • Power generation from solid aluminum (34 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Optics
  • Optoelectronics

His primary areas of investigation include Optoelectronics, Band gap, Inorganic chemistry, Water splitting and Solar cell. His Optoelectronics research integrates issues from Molecular beam epitaxy, Photovoltaic system, Optics and Substrate. Molecular beam epitaxy is the subject of his research, which falls under Epitaxy.

His work carried out in the field of Band gap brings together such families of science as Photovoltaics, Energy conversion efficiency, Thin film, Heterojunction and Schottky barrier. Jerry M. Woodall interconnects Indium, Chemical engineering, Gallium and Crystallite in the investigation of issues within Inorganic chemistry. His Solar cell research also works with subjects such as

  • Gallium phosphide which intersects with area such as Schottky diode,
  • Photoluminescence which connect with Island growth, Diffraction, Lattice and Crystallography.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Structure of GaAs(001) ( 2 × 4 ) − c ( 2 × 8 ) Determined by Scanning Tunneling Microscopy

M. D. Pashley;K. W. Haberern;W. Friday;J. M. Woodall.
Physical Review Letters (1988)

659 Citations

Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy

A. C. Warren;J. M. Woodall;J. L. Freeouf;D. Grischkowsky.
Applied Physics Letters (1990)

569 Citations

Schottky barriers: An effective work function model

J. L. Freeouf;J. M. Woodall.
Applied Physics Letters (1981)

526 Citations

Macroelectronics: Perspectives on Technology and Applications

R.H. Reuss;B.R. Chalamala;A. Moussessian;M.G. Kane.
Proceedings of the IEEE (2005)

432 Citations

Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area

E. A. Fitzgerald;G. P. Watson;R. E. Proano;D. G. Ast.
Journal of Applied Physics (1989)

412 Citations

Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures

M. R. Melloch;N. Otsuka;J. M. Woodall;A. C. Warren.
Applied Physics Letters (1990)

299 Citations

Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

K.P. Schoen;J.M. Woodall;J.A. Cooper;M.R. Melloch.
IEEE Transactions on Electron Devices (1998)

286 Citations

Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy

J. M. Woodall;J. L. Freeouf;G. D. Pettit;Thomas Nelson Jackson.
Journal of Vacuum Science and Technology (1981)

273 Citations

Unpinned (100) GaAs surfaces in air using photochemistry

S. D. Offsey;J. M. Woodall;A. C. Warren;P. D. Kirchner.
Applied Physics Letters (1986)

270 Citations

Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers

K. L. Kavanagh;M. A. Capano;L. W. Hobbs;J. C. Barbour.
Journal of Applied Physics (1988)

263 Citations

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