Jerry M. Woodall mainly investigates Optoelectronics, Condensed matter physics, Molecular beam epitaxy, Analytical chemistry and Fermi level. Jerry M. Woodall has included themes like Substrate and Optics in his Optoelectronics study. His Molecular beam epitaxy research incorporates themes from Crystal growth, Semiconductor laser theory, Thin film and Arsenic.
Jerry M. Woodall has researched Fermi level in several fields, including Ohmic contact and Work function. His Epitaxy research incorporates elements of Doping and Lattice constant. His Schottky barrier study combines topics from a wide range of disciplines, such as Transistor, Nanotechnology and Semiconductor.
Jerry M. Woodall mainly focuses on Optoelectronics, Semiconductor, Condensed matter physics, Molecular beam epitaxy and Doping. His research investigates the connection between Optoelectronics and topics such as Epitaxy that intersect with issues in Thin film. His work deals with themes such as Layer, Semiconductor device, Nanotechnology and Band gap, which intersect with Semiconductor.
Schottky barrier is closely connected to Fermi level in his research, which is encompassed under the umbrella topic of Condensed matter physics. His Molecular beam epitaxy research focuses on Analytical chemistry and how it relates to Annealing. His Doping research is multidisciplinary, incorporating elements of Schottky diode and Ohmic contact.
His scientific interests lie mostly in Nanotechnology, Nanoelectromechanical systems, Nanoelectronics, Outreach and Optoelectronics. His research integrates issues of Photonics and Engineering physics in his study of Nanotechnology. His studies deal with areas such as Molecular beam epitaxy, Epitaxy and Optics as well as Optoelectronics.
His work in Molecular beam epitaxy tackles topics such as Substrate which are related to areas like Gallium phosphide. His Epitaxy research is multidisciplinary, incorporating perspectives in Solid-state physics, Hall effect, Doping and Photoluminescence. His Schottky barrier research is multidisciplinary, relying on both Schottky diode, Semiconductor and Transfer printing.
His primary areas of investigation include Optoelectronics, Band gap, Inorganic chemistry, Water splitting and Solar cell. His Optoelectronics research integrates issues from Molecular beam epitaxy, Photovoltaic system, Optics and Substrate. Molecular beam epitaxy is the subject of his research, which falls under Epitaxy.
His work carried out in the field of Band gap brings together such families of science as Photovoltaics, Energy conversion efficiency, Thin film, Heterojunction and Schottky barrier. Jerry M. Woodall interconnects Indium, Chemical engineering, Gallium and Crystallite in the investigation of issues within Inorganic chemistry. His Solar cell research also works with subjects such as
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Structure of GaAs(001) ( 2 × 4 ) − c ( 2 × 8 ) Determined by Scanning Tunneling Microscopy
M. D. Pashley;K. W. Haberern;W. Friday;J. M. Woodall.
Physical Review Letters (1988)
Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
A. C. Warren;J. M. Woodall;J. L. Freeouf;D. Grischkowsky.
Applied Physics Letters (1990)
Schottky barriers: An effective work function model
J. L. Freeouf;J. M. Woodall.
Applied Physics Letters (1981)
Macroelectronics: Perspectives on Technology and Applications
R.H. Reuss;B.R. Chalamala;A. Moussessian;M.G. Kane.
Proceedings of the IEEE (2005)
Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
E. A. Fitzgerald;G. P. Watson;R. E. Proano;D. G. Ast.
Journal of Applied Physics (1989)
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
M. R. Melloch;N. Otsuka;J. M. Woodall;A. C. Warren.
Applied Physics Letters (1990)
Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers
K.P. Schoen;J.M. Woodall;J.A. Cooper;M.R. Melloch.
IEEE Transactions on Electron Devices (1998)
Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy
J. M. Woodall;J. L. Freeouf;G. D. Pettit;Thomas Nelson Jackson.
Journal of Vacuum Science and Technology (1981)
Unpinned (100) GaAs surfaces in air using photochemistry
S. D. Offsey;J. M. Woodall;A. C. Warren;P. D. Kirchner.
Applied Physics Letters (1986)
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers
K. L. Kavanagh;M. A. Capano;L. W. Hobbs;J. C. Barbour.
Journal of Applied Physics (1988)
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