World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
69
Citations
14996
World Ranking
976
National Ranking
413

Materials Science

D-Index
71
Citations
17534
World Ranking
4261
National Ranking
1146

Overview

Jerry M. Woodall is affiliated with the University of California, Davis in the United States. Their research spans multiple fields, primarily focusing on materials science, engineering, and physics and astronomy.

The main areas of study include:

  • Materials Science
  • Engineering
  • Physics and Astronomy

Within these fields, Woodall has contributed to several subfields such as materials chemistry, electrical and electronic engineering, atomic and molecular physics and optics, electronic, optical and magnetic materials, and condensed matter physics.

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Woodall's work covers a variety of topics, notably semiconductor quantum structures and devices, Ga2O3 and related materials, ZnO doping and properties, GaN-based semiconductor devices and materials, advanced photocatalysis techniques, hydrogen storage and materials, and catalysis and hydrodesulfurization studies.

  • Semiconductor Quantum Structures and Devices
  • Ga2O3 and related materials
  • ZnO doping and properties
  • GaN-based semiconductor devices and materials
  • Advanced Photocatalysis Techniques
  • Hydrogen Storage and Materials
  • Catalysis and Hydrodesulfurization Studies

Recent publications authored in collaboration with other researchers include:

  • "Gallium oxide nanowires for UV detection with enhanced growth and material properties" (2020) published in Scientific Reports
  • "Study on the liquid phase-derived activation mechanism in Al-rich alloy hydrolysis reaction for hydrogen production" (2022) published in Energy
  • "Influence of Silver as a Catalyst on the Growth of β-Ga2O3 Nanowires on GaAs" (2020) published in Materials
  • "Finite-Difference Time-Domain Simulations of Photon-Trapping Nanohole Arrays for Enhanced Optical Absorption in Ultrahigh-Speed GaAs Photodetectors" (2024) published in ACS Applied Nano Materials
  • "Interface studies of molecular beam epitaxy (MBE) grown ZnSe-GaAs heterovalent structures" (2020) published in Journal of Applied Physics

Frequent collaborators working with Woodall include Ryan Bunk, M. Saif Islam, Badriyah Alhalaili, Howard Mao, and Hilal Cansizoglu.

Overall, Woodall's contributions are represented in diverse publication venues that reflect interdisciplinary research, including Scientific Reports, Energy, ACS Applied Nano Materials, Materials, and the Journal of Applied Physics.

Best Publications

  • Structure of GaAs(001) ( 2 × 4 ) − c ( 2 × 8 ) Determined by Scanning Tunneling Microscopy

    M. D. Pashley;K. W. Haberern;W. Friday;J. M. Woodall

  • Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy

    A. C. Warren;J. M. Woodall;J. L. Freeouf;D. Grischkowsky

  • Schottky barriers: An effective work function model

    J. L. Freeouf;J. M. Woodall

  • Macroelectronics: Perspectives on Technology and Applications

    R.H. Reuss;B.R. Chalamala;A. Moussessian;M.G. Kane

  • Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area

    E. A. Fitzgerald;G. P. Watson;R. E. Proano;D. G. Ast

  • Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures

    M. R. Melloch;N. Otsuka;J. M. Woodall;A. C. Warren

  • Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

    K.P. Schoen;J.M. Woodall;J.A. Cooper;M.R. Melloch

  • Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy

    J. M. Woodall;J. L. Freeouf;G. D. Pettit;Thomas Nelson Jackson

  • Unpinned (100) GaAs surfaces in air using photochemistry

    S. D. Offsey;J. M. Woodall;A. C. Warren;P. D. Kirchner

  • Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers

    K. L. Kavanagh;M. A. Capano;L. W. Hobbs;J. C. Barbour

  • Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs.

    R. M. Feenstra;J. M. Woodall;G. D. Pettit

  • The effect of fluorescent wavelength shifting on solar cell spectral response

    H.J. Hovel;R.T. Hodgson;J.M. Woodall

  • Liquid phase-enabled reaction of Al-Ga and Al-Ga-In-Sn alloys with water

    Jeffrey T. Ziebarth;Jerry M. Woodall;Robert A. Kramer;Go Choi

  • Carrier lifetime versus anneal in low temperature growth GaAs

    E. S. Harmon;M. R. Melloch;J. M. Woodall;D. D. Nolte

  • Structure and recombination in InGaAs/GaAs heterostructures

    E. A. Fitzgerald;D. G. Ast;P. D. Kirchner;G. D. Pettit

  • High-efficiency Ga1-xAlxAs-GaAs solar cells

    J.M. Woodall;H.J. Hovel

  • EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY

    H. Rupprecht;J. M. Woodall;G. D. Pettit

  • An isothermal etchback-regrowth method for high-efficiency Ga/1-x/Al/x/As-GaAs solar cells

    J. M. Woodall;H. J. Hovel

  • GaAs metallization: Some problems and trends

    J. M. Woodall;J. L. Freeouf

  • A new concept for solar energy thermal conversion

    J. J. Cuomo;J. F. Ziegler;J. M. Woodall

  • An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT

    Unknown

Frequent Co-Authors

Michael R. Melloch
Michael R. Melloch Purdue University West Lafayette
Thomas N. Jackson
Thomas N. Jackson Pennsylvania State University
Leonard J. Brillson
Leonard J. Brillson The Ohio State University
Nobuo Otsuka
Nobuo Otsuka Purdue University West Lafayette
David B. Janes
David B. Janes Purdue University West Lafayette
Randall M. Feenstra
Randall M. Feenstra Carnegie Mellon University
Jerome J. Cuomo
Jerome J. Cuomo North Carolina State University
Sandip Tiwari
Sandip Tiwari Cornell University
Mark Lundstrom
Mark Lundstrom Purdue University West Lafayette
Giorgio Margaritondo
Giorgio Margaritondo École Polytechnique Fédérale de Lausanne

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