World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
72
Citations
27592
World Ranking
791
National Ranking
341

Materials Science

D-Index
74
Citations
28335
World Ranking
3554
National Ranking
978

Overview

Thomas N. Jackson is affiliated with Pennsylvania State University in the United States. Their primary fields of study are Engineering and Materials Science, with significant work also in several subfields including Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry, Radiology, Nuclear Medicine and Imaging, and Mechanics of Materials.

The scientist's research extensively covers topics related to Acoustic Wave Resonator Technologies, Ferroelectric and Piezoelectric Materials, Ultrasound Imaging and Elastography, Semiconductor materials and devices, GaN-based semiconductor devices and materials, Ultrasonics and Acoustic Wave Propagation, and ZnO doping and properties.

Frequent co-authors collaborating with Thomas N. Jackson include:

  • Susan Trolier-McKinstry
  • Quyen Tran
  • Jon-Paul Maria
  • Pannawit Tipsawat
  • Joseph Casamento

Jackson has published in a variety of venues, with notable frequent publications in:

  • IEEE Electron Device Letters
  • Sensors
  • Journal of Astronomical Telescopes Instruments and Systems
  • Journal of Applied Physics
  • arXiv (Cornell University)

Selected recent papers authored or co-authored by Thomas N. Jackson include:

  • Experimental Demonstration of Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching, 2020, IEEE Electron Device Letters
  • Flexible Thin-Film PZT Ultrasonic Transducers on Polyimide Substrates, 2021, Sensors
  • Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications, 2024, Applied Physics Letters
  • A Transparent Ultrasound Array for Real-Time Optical, Ultrasound, and Photoacoustic Imaging, 2022, BME Frontiers
  • Frequency dependence of wake-up and fatigue characteristics in ferroelectric Al0.93B0.07N thin films, 2024, Acta Materialia

Best Publications

  • Flexible high-temperature dielectric materials from polymer nanocomposites

    Qi Li;Lei Chen;Matthew R. Gadinski;Shihai Zhang

  • Stacked pentacene layer organic thin-film transistors with improved characteristics

    Y.-Y. Lin;D.J. Gundlach;S.F. Nelson;T.N. Jackson

  • Electric-field assisted assembly and alignment of metallic nanowires

    Peter A. Smith;Christopher D. Nordquist;Thomas N. Jackson;Theresa S. Mayer

  • Pentacene organic thin-film transistors-molecular ordering and mobility

    D.J. Gundlach;Y.Y. Lin;T.N. Jackson;S.F. Nelson

  • Temperature-independent transport in high-mobility pentacene transistors

    S. F. Nelson;Y. Y. Lin;D. J. Gundlach;Thomas Nelson Jackson

  • Organic thin-film transistor-driven polymer-dispersed liquid crystal displays on flexible polymeric substrates

    C. D Sheraw;L. Zhou;J. R Huang;D. J Gundlach

  • Organic field-effect transistors from solution-deposited functionalized acenes with mobilities as high as 1 cm2/V x s.

    Marcia M. Payne;Sean R. Parkin;John E. Anthony;Chung Chen Kuo

  • High mobility solution processed 6,13-bis(triisopropyl-silylethynyl) pentacene organic thin film transistors

    Sung Kyu Park;Thomas N. Jackson;John E. Anthony;Devin A. Mourey

  • Pentacene-based organic thin-film transistors

    Yen-Yi Lin;D.I. Gundlach;S.F. Nelson;T.N. Jackson

  • All-organic active matrix flexible display

    Lisong Zhou;Alfred Wanga;Sheng Chu Wu;Jie Sun

  • An experimental study of contact effects in organic thin film transistors

    D. J. Gundlach;D. J. Gundlach;L. Zhou;J. A. Nichols;T. N. Jackson

  • Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits.

    D. J. Gundlach;J. E. Royer;S. K. Park;S. Subramanian

  • Functionalized pentacene active layer organic thin-film transistors

    Chris D. Sheraw;Thomas Nelson Jackson;Dave L. Eaton;John E. Anthony

  • Mobility overestimation due to gated contacts in organic field-effect transistors

    Emily G. Bittle;James I. Basham;James I. Basham;Thomas N. Jackson;Oana D. Jurchescu

  • Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry

    Seung Gu Lim;Stas Kriventsov;Thomas N. Jackson;J. H. Haeni

  • Pentacene organic thin-film transistors for circuit and display applications

    H. Klauk;D.J. Gundlach;J.A. Nichols;T.N. Jackson

  • Contact resistance extraction in pentacene thin film transistors

    Peter V Necliudov;Michael S Shur;David J Gundlach;Thomas N Jackson

  • Chromophore fluorination enhances crystallization and stability of soluble anthradithiophene semiconductors.

    Sankar Subramanian;Sung Kyu Park;Sean R. Parkin;Vitaly Podzorov

  • Modeling of organic thin film transistors of different designs

    P. V. Necliudov;M. S. Shur;D. J. Gundlach;T. N. Jackson

  • Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes

    D.J. Gundlach;Li Li Jia;T.N. Jackson

Frequent Co-Authors

Jerry M. Woodall
Jerry M. Woodall University of California, Davis
David J. Gundlach
David J. Gundlach National Institute of Standards and Technology
Susan Trolier-McKinstry
Susan Trolier-McKinstry Pennsylvania State University
John E. Anthony
John E. Anthony University of Kentucky
Sung Kyu Park
Sung Kyu Park Chung-Ang University
Oana D. Jurchescu
Oana D. Jurchescu Wake Forest University
Theresa S. Mayer
Theresa S. Mayer Purdue University West Lafayette
S. Balachandar
S. Balachandar University of Florida
Elizabeth C. Dickey
Elizabeth C. Dickey Carnegie Mellon University
Michael Shur
Michael Shur Rensselaer Polytechnic Institute

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