World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
72
Citations
27592
World Ranking
791
National Ranking
341

Materials Science

D-Index
74
Citations
28335
World Ranking
3554
National Ranking
978

Thomas N. Jackson publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Thomas N. Jackson sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 446 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 425 publications — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Thomas N. Jackson D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Thomas N. Jackson sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 263 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 72 D-Index — 89th percentile

89% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Thomas N. Jackson is affiliated with Pennsylvania State University in the United States. Their primary fields of study are Engineering and Materials Science, with significant work also in several subfields including Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry, Radiology, Nuclear Medicine and Imaging, and Mechanics of Materials.

The scientist's research extensively covers topics related to Acoustic Wave Resonator Technologies, Ferroelectric and Piezoelectric Materials, Ultrasound Imaging and Elastography, Semiconductor materials and devices, GaN-based semiconductor devices and materials, Ultrasonics and Acoustic Wave Propagation, and ZnO doping and properties.

Frequent co-authors collaborating with Thomas N. Jackson include:

  • Susan Trolier-McKinstry
  • Quyen Tran
  • Jon-Paul Maria
  • Pannawit Tipsawat
  • Joseph Casamento

Jackson has published in a variety of venues, with notable frequent publications in:

  • IEEE Electron Device Letters
  • Sensors
  • Journal of Astronomical Telescopes Instruments and Systems
  • Journal of Applied Physics
  • arXiv (Cornell University)

Selected recent papers authored or co-authored by Thomas N. Jackson include:

  • Experimental Demonstration of Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching, 2020, IEEE Electron Device Letters
  • Flexible Thin-Film PZT Ultrasonic Transducers on Polyimide Substrates, 2021, Sensors
  • Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications, 2024, Applied Physics Letters
  • A Transparent Ultrasound Array for Real-Time Optical, Ultrasound, and Photoacoustic Imaging, 2022, BME Frontiers
  • Frequency dependence of wake-up and fatigue characteristics in ferroelectric Al0.93B0.07N thin films, 2024, Acta Materialia

Best Publications

  • Flexible high-temperature dielectric materials from polymer nanocomposites

    Qi Li;Lei Chen;Matthew R. Gadinski;Shihai Zhang

  • Stacked pentacene layer organic thin-film transistors with improved characteristics

    Y.-Y. Lin;D.J. Gundlach;S.F. Nelson;T.N. Jackson

  • Electric-field assisted assembly and alignment of metallic nanowires

    Peter A. Smith;Christopher D. Nordquist;Thomas N. Jackson;Theresa S. Mayer

  • Pentacene organic thin-film transistors-molecular ordering and mobility

    D.J. Gundlach;Y.Y. Lin;T.N. Jackson;S.F. Nelson

  • Temperature-independent transport in high-mobility pentacene transistors

    S. F. Nelson;Y. Y. Lin;D. J. Gundlach;Thomas Nelson Jackson

  • Organic thin-film transistor-driven polymer-dispersed liquid crystal displays on flexible polymeric substrates

    C. D Sheraw;L. Zhou;J. R Huang;D. J Gundlach

  • Organic field-effect transistors from solution-deposited functionalized acenes with mobilities as high as 1 cm2/V x s.

    Marcia M. Payne;Sean R. Parkin;John E. Anthony;Chung Chen Kuo

  • High mobility solution processed 6,13-bis(triisopropyl-silylethynyl) pentacene organic thin film transistors

    Sung Kyu Park;Thomas N. Jackson;John E. Anthony;Devin A. Mourey

  • Pentacene-based organic thin-film transistors

    Yen-Yi Lin;D.I. Gundlach;S.F. Nelson;T.N. Jackson

  • All-organic active matrix flexible display

    Lisong Zhou;Alfred Wanga;Sheng Chu Wu;Jie Sun

  • An experimental study of contact effects in organic thin film transistors

    D. J. Gundlach;D. J. Gundlach;L. Zhou;J. A. Nichols;T. N. Jackson

  • Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits.

    D. J. Gundlach;J. E. Royer;S. K. Park;S. Subramanian

  • Functionalized pentacene active layer organic thin-film transistors

    Chris D. Sheraw;Thomas Nelson Jackson;Dave L. Eaton;John E. Anthony

  • Mobility overestimation due to gated contacts in organic field-effect transistors

    Emily G. Bittle;James I. Basham;James I. Basham;Thomas N. Jackson;Oana D. Jurchescu

  • Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry

    Seung Gu Lim;Stas Kriventsov;Thomas N. Jackson;J. H. Haeni

  • Pentacene organic thin-film transistors for circuit and display applications

    H. Klauk;D.J. Gundlach;J.A. Nichols;T.N. Jackson

  • Contact resistance extraction in pentacene thin film transistors

    Peter V Necliudov;Michael S Shur;David J Gundlach;Thomas N Jackson

  • Chromophore fluorination enhances crystallization and stability of soluble anthradithiophene semiconductors.

    Sankar Subramanian;Sung Kyu Park;Sean R. Parkin;Vitaly Podzorov

  • Modeling of organic thin film transistors of different designs

    P. V. Necliudov;M. S. Shur;D. J. Gundlach;T. N. Jackson

  • Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes

    D.J. Gundlach;Li Li Jia;T.N. Jackson

Frequent Co-Authors

Jerry M. Woodall
Jerry M. Woodall University of California, Davis
David J. Gundlach
David J. Gundlach National Institute of Standards and Technology
Susan Trolier-McKinstry
Susan Trolier-McKinstry Pennsylvania State University
John E. Anthony
John E. Anthony University of Kentucky
Sung Kyu Park
Sung Kyu Park Chung-Ang University
Oana D. Jurchescu
Oana D. Jurchescu Wake Forest University
Theresa S. Mayer
Theresa S. Mayer Purdue University West Lafayette
S. Balachandar
S. Balachandar University of Florida
Elizabeth C. Dickey
Elizabeth C. Dickey Carnegie Mellon University
Michael Shur
Michael Shur Rensselaer Polytechnic Institute

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