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Materials Science

D-Index
63
Citations
19523
World Ranking
6058
National Ranking
1549

Overview

David J. Gundlach is affiliated with the National Institute of Standards and Technology in the United States. Their research primarily spans the fields of Engineering and Materials Science, focusing on subfields such as Electrical and Electronic Engineering, Polymers and Plastics, Materials Chemistry, and Electronic, Optical and Magnetic Materials.

Their scholarly work extensively covers topics related to organic electronics and photonics. The main research themes include:

  • Organic Light-Emitting Diodes Research
  • Organic Electronics and Photovoltaics
  • Thin-Film Transistor Technologies
  • Conducting Polymers and Applications
  • Luminescence and Fluorescent Materials
  • Photonic and Optical Devices
  • Nonlinear Optical Materials Research

Frequent co-authors collaborating with David J. Gundlach comprise Sebastian Engmann, Emily G. Bittle, Jasleen K. Bindra, Pragya R. Shrestha, and Chad D. Cruz. These partnerships have supported contributions across multiple studies and publications.

Publications by David J. Gundlach appear most often in the following venues:

  • Journal of Materials Chemistry C
  • ACS Applied Electronic Materials
  • Materials Today Advances
  • SSRN Electronic Journal

Representative recent papers authored or co-authored by David J. Gundlach include:

  • "High-density polyethylene-an inert additive with stabilizing effects on organic field-effect transistors," 2020, Journal of Materials Chemistry C
  • "The role of orientation in the MEL response of OLEDs," 2021, Journal of Materials Chemistry C
  • "Magnetic Field Sensor Based on a OLED/Organic Photodetector Stack," 2023, ACS Applied Electronic Materials
  • "Non-resonant phase sensitive approach for time resolved microwave conductivity in photoactive thin films," 2024, Materials Today Advances
  • "Non-Resonant Phase Sensitive Approach for Time Resolved Microwave Conductivity in Photoactive Thin Films," 2023, SSRN Electronic Journal

Best Publications

  • Stacked pentacene layer organic thin-film transistors with improved characteristics

    Y.-Y. Lin;D.J. Gundlach;S.F. Nelson;T.N. Jackson

  • Pentacene organic thin-film transistors-molecular ordering and mobility

    D.J. Gundlach;Y.Y. Lin;T.N. Jackson;S.F. Nelson

  • Temperature-independent transport in high-mobility pentacene transistors

    S. F. Nelson;Y. Y. Lin;D. J. Gundlach;Thomas Nelson Jackson

  • Organic thin-film transistor-driven polymer-dispersed liquid crystal displays on flexible polymeric substrates

    C. D Sheraw;L. Zhou;J. R Huang;D. J Gundlach

  • Threshold Voltage Shift in Organic Field Effect Transistors by Dipole-Monolayers on the Gate Insulator

    K. P. Pernstich;A. N. Rashid;S. Haas;G. Schitter

  • Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator

    K. P. Pernstich;S. Haas;D. Oberhoff;C. Goldmann

  • An experimental study of contact effects in organic thin film transistors

    D. J. Gundlach;D. J. Gundlach;L. Zhou;J. A. Nichols;T. N. Jackson

  • Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits.

    D. J. Gundlach;J. E. Royer;S. K. Park;S. Subramanian

  • Mobility overestimation due to gated contacts in organic field-effect transistors

    Emily G. Bittle;James I. Basham;James I. Basham;Thomas N. Jackson;Oana D. Jurchescu

  • Semiconducting Thienothiophene Copolymers: Design, Synthesis, Morphology, and Performance in Thin‐Film Organic Transistors

    I McCulloch;M Heeney;ML Chabinyc;D DeLongchamp

  • Pentacene organic thin-film transistors for circuit and display applications

    H. Klauk;D.J. Gundlach;J.A. Nichols;T.N. Jackson

  • Contact resistance extraction in pentacene thin film transistors

    Peter V Necliudov;Michael S Shur;David J Gundlach;Thomas N Jackson

  • Modeling of organic thin film transistors of different designs

    P. V. Necliudov;M. S. Shur;D. J. Gundlach;T. N. Jackson

  • Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes

    D.J. Gundlach;Li Li Jia;T.N. Jackson

  • Anisotropic Structure and Charge Transport in Highly Strain‐Aligned Regioregular Poly(3‐hexylthiophene)

    Brendan O'Connor;R. Joseph Kline;Brad R. Conrad;Lee J. Richter

  • Solvent-induced phase transition in thermally evaporated pentacene films

    D. J. Gundlach;T. N. Jackson;D. G. Schlom;S. F. Nelson

  • Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

    Matthew Waldrip;Oana D. Jurchescu;David J. Gundlach;Emily G. Bittle

  • Thin-film transistors based on well-ordered thermally evaporated naphthacene films

    D. J. Gundlach;J. A. Nichols;L. Zhou;T. N. Jackson

  • A Flexible Solution-Processed Memristor

    N. Gergel-Hackett;B. Hamadani;B. Dunlap;J. Suehle

  • Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators.

    Berardi Sensale-Rodriguez;Rusen Yan;Rusen Yan;Subrina Rafique;Mingda Zhu

  • Undoped polythiophene field-effect transistors with mobility of 1cm2V−1s−1

    B. H. Hamadani;D. J. Gundlach;I. McCulloch;M. Heeney

Frequent Co-Authors

Thomas N. Jackson
Thomas N. Jackson Pennsylvania State University
Curt A. Richter
Curt A. Richter National Institute of Standards and Technology
Oana D. Jurchescu
Oana D. Jurchescu Wake Forest University
Lee J. Richter
Lee J. Richter National Institute of Standards and Technology
Dean M. DeLongchamp
Dean M. DeLongchamp National Institute of Standards and Technology
John E. Anthony
John E. Anthony University of Kentucky
R. Joseph Kline
R. Joseph Kline National Institute of Standards and Technology
Daniel A. Fischer
Daniel A. Fischer National Institute of Standards and Technology
Lian-Mao Peng
Lian-Mao Peng Peking University
Iain McCulloch
Iain McCulloch University of Oxford

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