2026 David J. Gundlach: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	63	6056	5860	1547	1445	208	19523

David J. Gundlach publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where David J. Gundlach sits on this spectrum.

50 publications 1,163+

This scientist: 208 publications — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

David J. Gundlach D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where David J. Gundlach sits on this spectrum.

40 D-Index 165+

This scientist: 63 D-Index — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

David J. Gundlach is affiliated with the National Institute of Standards and Technology in the United States. Their research primarily spans the fields of Engineering and Materials Science, focusing on subfields such as Electrical and Electronic Engineering, Polymers and Plastics, Materials Chemistry, and Electronic, Optical and Magnetic Materials.

Their scholarly work extensively covers topics related to organic electronics and photonics. The main research themes include:

Organic Light-Emitting Diodes Research
Organic Electronics and Photovoltaics
Thin-Film Transistor Technologies
Conducting Polymers and Applications
Luminescence and Fluorescent Materials
Photonic and Optical Devices
Nonlinear Optical Materials Research

Frequent co-authors collaborating with David J. Gundlach comprise Sebastian Engmann, Emily G. Bittle, Jasleen K. Bindra, Pragya R. Shrestha, and Chad D. Cruz. These partnerships have supported contributions across multiple studies and publications.

Publications by David J. Gundlach appear most often in the following venues:

Journal of Materials Chemistry C
ACS Applied Electronic Materials
Materials Today Advances
SSRN Electronic Journal

Representative recent papers authored or co-authored by David J. Gundlach include:

"High-density polyethylene-an inert additive with stabilizing effects on organic field-effect transistors," 2020, Journal of Materials Chemistry C
"The role of orientation in the MEL response of OLEDs," 2021, Journal of Materials Chemistry C
"Magnetic Field Sensor Based on a OLED/Organic Photodetector Stack," 2023, ACS Applied Electronic Materials
"Non-resonant phase sensitive approach for time resolved microwave conductivity in photoactive thin films," 2024, Materials Today Advances
"Non-Resonant Phase Sensitive Approach for Time Resolved Microwave Conductivity in Photoactive Thin Films," 2023, SSRN Electronic Journal

Best Publications

Stacked pentacene layer organic thin-film transistors with improved characteristics

Y.-Y. Lin;D.J. Gundlach;S.F. Nelson;T.N. Jackson

1302
Citations
Pentacene organic thin-film transistors-molecular ordering and mobility

D.J. Gundlach;Y.Y. Lin;T.N. Jackson;S.F. Nelson

1102
Citations
Temperature-independent transport in high-mobility pentacene transistors

S. F. Nelson;Y. Y. Lin;D. J. Gundlach;Thomas Nelson Jackson

1087
Citations
Organic thin-film transistor-driven polymer-dispersed liquid crystal displays on flexible polymeric substrates

C. D Sheraw;L. Zhou;J. R Huang;D. J Gundlach

1005
Citations
Threshold Voltage Shift in Organic Field Effect Transistors by Dipole-Monolayers on the Gate Insulator

K. P. Pernstich;A. N. Rashid;S. Haas;G. Schitter

695
Citations
Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator

K. P. Pernstich;S. Haas;D. Oberhoff;C. Goldmann

595
Citations
An experimental study of contact effects in organic thin film transistors

D. J. Gundlach;D. J. Gundlach;L. Zhou;J. A. Nichols;T. N. Jackson

554
Citations
Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits.

D. J. Gundlach;J. E. Royer;S. K. Park;S. Subramanian

550
Citations
Mobility overestimation due to gated contacts in organic field-effect transistors

Emily G. Bittle;James I. Basham;James I. Basham;Thomas N. Jackson;Oana D. Jurchescu

529
Citations
Semiconducting Thienothiophene Copolymers: Design, Synthesis, Morphology, and Performance in Thin‐Film Organic Transistors

I McCulloch;M Heeney;ML Chabinyc;D DeLongchamp

517
Citations
Pentacene organic thin-film transistors for circuit and display applications

H. Klauk;D.J. Gundlach;J.A. Nichols;T.N. Jackson

437
Citations
Contact resistance extraction in pentacene thin film transistors

Peter V Necliudov;Michael S Shur;David J Gundlach;Thomas N Jackson

431
Citations
Modeling of organic thin film transistors of different designs

P. V. Necliudov;M. S. Shur;D. J. Gundlach;T. N. Jackson

398
Citations
Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes

D.J. Gundlach;Li Li Jia;T.N. Jackson

372
Citations
Anisotropic Structure and Charge Transport in Highly Strain‐Aligned Regioregular Poly(3‐hexylthiophene)

Brendan O'Connor;R. Joseph Kline;Brad R. Conrad;Lee J. Richter

371
Citations
Solvent-induced phase transition in thermally evaporated pentacene films

D. J. Gundlach;T. N. Jackson;D. G. Schlom;S. F. Nelson

342
Citations
Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Matthew Waldrip;Oana D. Jurchescu;David J. Gundlach;Emily G. Bittle

314
Citations
Thin-film transistors based on well-ordered thermally evaporated naphthacene films

D. J. Gundlach;J. A. Nichols;L. Zhou;T. N. Jackson

312
Citations
A Flexible Solution-Processed Memristor

N. Gergel-Hackett;B. Hamadani;B. Dunlap;J. Suehle

304
Citations
Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators.

Berardi Sensale-Rodriguez;Rusen Yan;Rusen Yan;Subrina Rafique;Mingda Zhu

303
Citations
Undoped polythiophene field-effect transistors with mobility of 1cm2V−1s−1

B. H. Hamadani;D. J. Gundlach;I. McCulloch;M. Heeney

292
Citations