World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
48
Citations
11058
World Ranking
4499
National Ranking
1290

Oana D. Jurchescu publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Oana D. Jurchescu sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 219 publications — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Oana D. Jurchescu D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Oana D. Jurchescu sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 48 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Oana D. Jurchescu is affiliated with Wake Forest University in the United States. Their research spans Engineering and Materials Science, with significant contributions focused on Electrical and Electronic Engineering and Materials Chemistry. Additional specialization includes Polymers and Plastics, Biomedical Engineering, and Bioengineering.

Their work covers multiple topics related to organic electronics and materials science. Key research areas include:

  • Organic Electronics and Photovoltaics
  • Crystallization and Solubility Studies
  • X-ray Diffraction in Crystallography
  • Conducting Polymers and Applications
  • Molecular Junctions and Nanostructures
  • Perovskite Materials and Applications
  • Advanced Memory and Neural Computing

Oana D. Jurchescu has authored publications in a variety of scientific venues. Frequent publication venues include:

  • The Cambridge Structural Database (17 publications)
  • Journal of Materials Chemistry C (9 publications)
  • Materials Horizons (4 publications)
  • UNC Libraries (4 publications)
  • Chemistry of Materials (3 publications)

Recent papers by Oana D. Jurchescu highlight their research interests and contributions to advanced electronic materials and device technologies. Notable recent works include:

  • Switched-On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors, 2021, Advanced Functional Materials
  • Suppressing bias stress degradation in high performance solution processed organic transistors operating in air, 2021, Nature Communications
  • Roadmap on printable electronic materials for next-generation sensors, 2024, Nano Futures
  • Organic Field-Effect Transistors as Flexible, Tissue-Equivalent Radiation Dosimeters in Medical Applications, 2020, Advanced Science
  • Dynamic self-stabilization in the electronic and nanomechanical properties of an organic polymer semiconductor, 2022, Nature Communications

They have collaborated frequently with a number of researchers, including:

  • Tatiana V. Timofeeva
  • Seth R. Marder
  • Hamna F. Iqbal
  • John E. Anthony
  • Stephen Barlow

Best Publications

  • Effect of impurities on the mobility of single crystal pentacene

    Oana D. Jurchescu;Jacob Baas;Thomas T. M. Palstra

  • The effect of impurities on the mobility of single crystal pentacene

    Oana D. Jurchescu;Jacob Baas;Thomas T.M. Palstra

  • Charge carrier traps in organic semiconductors: a review on the underlying physics and impact on electronic devices

    Hamna F. Haneef;Andrew M. Zeidell;Oana D. Jurchescu

  • Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits.

    D. J. Gundlach;J. E. Royer;S. K. Park;S. Subramanian

  • Mobility overestimation due to gated contacts in organic field-effect transistors

    Emily G. Bittle;James I. Basham;James I. Basham;Thomas N. Jackson;Oana D. Jurchescu

  • Charge-transfer complexes: new perspectives on an old class of compounds

    Katelyn P. Goetz;Derek Vermeulen;Margaret E. Payne;Christian Kloc

  • Interface‐Controlled, High‐Mobility Organic Transistors

    Oana D. Jurchescu;Mihaita Popinciuc;Bart J. van Wees;Thomas T. M. Palstra

  • Low-temperature structure of rubrene single crystals grown by vapor transport

    Oana D. Jurchescu;Auke Meetsma;Thomas T. M. Palstra

  • Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

    Matthew Waldrip;Oana D. Jurchescu;David J. Gundlach;Emily G. Bittle

  • Organic Single-Crystal Field-Effect Transistors of a Soluble Anthradithiophene

    Oana D. Jurchescu;Sankar Subramanian;R. Joseph Kline;Steven D. Hudson

  • Tutorial: Organic field-effect transistors: Materials, structure and operation

    Zachary A. Lamport;Hamna F. Haneef;Sajant Anand;Matthew Waldrip

  • Electronic transport properties of pentacene single crystals upon exposure to air

    Oana D. Jurchescu;Jacob Baas;Thomas T. M. Palstra

  • Fabrication of organic thin-film transistors by spray-deposition for low-cost, large-area electronics

    Natalia A. Azarova;Jack W. Owen;Claire A. McLellan;Marsha A. Grimminger

  • Effects of polymorphism on charge transport in organic semiconductors

    Oana D. Jurchescu;Oana D. Jurchescu;Devin A. Mourey;Sankar Subramanian;Sean R. Parkin

  • Electrostatic gating of hybrid halide perovskite field-effect transistors: balanced ambipolar transport at room-temperature

    Y. Mei;C. Zhang;Z. V. Vardeny;O. D. Jurchescu

  • High Mobility Field‐Effect Transistors with Versatile Processing from a Small‐Molecule Organic Semiconductor

    Yaochuan Mei;Marsha A. Loth;Marcia Payne;Weimin Zhang

  • Ultrafast carrier dynamics in pentacene, functionalized pentacene, tetracene, and rubrene single crystals

    O. Ostroverkhova;David Cooke;F. A. Hegmann;J. E. Anthony

  • A simple and robust approach to reducing contact resistance in organic transistors

    Zachary A. Lamport;Katrina J. Barth;Hyunsu Lee;Eliot Gann

  • The effect of oxygen exposure on pentacene electronic structure.

    A. Vollmer;O. D. Jurchescu;I. Arfaoui;I. Salzmann

  • Charge Transport Properties of Perylene–TCNQ Crystals: The Effect of Stoichiometry

    D. Vermeulen;L. Y. Zhu;K. P. Goetz;Peng Hu

Frequent Co-Authors

John E. Anthony
John E. Anthony University of Kentucky
David J. Gundlach
David J. Gundlach National Institute of Standards and Technology
Curt A. Richter
Curt A. Richter National Institute of Standards and Technology
Iain McCulloch
Iain McCulloch University of Oxford
Thomas Palstra
Thomas Palstra University of Twente
Thomas N. Jackson
Thomas N. Jackson Pennsylvania State University
Veaceslav Coropceanu
Veaceslav Coropceanu University of Arizona
Aram Amassian
Aram Amassian North Carolina State University
Lee J. Richter
Lee J. Richter National Institute of Standards and Technology
Sean Parkin
Sean Parkin University of Kentucky

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