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D-Index & Metrics

Materials Science

D-Index
45
Citations
8575
World Ranking
11680
National Ranking
2726

Curt A. Richter publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Curt A. Richter sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 370 publications — 73rd percentile

73% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Curt A. Richter D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Curt A. Richter sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 45 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Curt A. Richter is affiliated with the National Institute of Standards and Technology in the United States. Their research spans various fields focusing on engineering, materials science, and physics and astronomy, with particular emphasis on electrical and electronic engineering, materials chemistry, atomic and molecular physics and optics, biomedical engineering, and bioengineering.

Richter's scholarly output includes 29 publications in engineering, 19 in materials science, and 18 in physics and astronomy. Their subfield contributions are concentrated in electrical and electronic engineering (26 publications), materials chemistry (18 publications), and atomic and molecular physics and optics (16 publications), alongside works in biomedical and bioengineering.

The scientist's research focuses on multiple topics including graphene research and applications, quantum and electron transport phenomena, semiconductor materials and devices, advancements in semiconductor devices and circuit design, 2D materials and applications, ferroelectric and negative capacitance devices, and MXene and MAX phase materials.

Frequent collaborators of Curt A. Richter include Son T. Le, Aaron D. Franklin, A. Zaslavsky, Zhihui Cheng, and Albert V. Davydov.

Richter's recent publication venues reflect their interdisciplinary scope and include:

  • arXiv (Cornell University)
  • Applied Physics Letters
  • AIP Advances
  • Physical Review B
  • Nature Electronics

Notable recent papers authored or coauthored by Richter include:

  • "How to report and benchmark emerging field-effect transistors," 2022, Nature Electronics
  • "Substrate-mediated hyperbolic phonon polaritons in MoO3," 2021, Nanophotonics
  • "Are 2D Interfaces Really Flat?," 2022, ACS Nano
  • "Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping," 2022, AIP Advances
  • "Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications," 2021, Applied Physics Letters

Best Publications

  • Toward Clean and Crackless Transfer of Graphene

    Xuelei Liang;Xuelei Liang;Brent A. Sperling;Irene Calizo;Guangjun Cheng

  • Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits.

    D. J. Gundlach;J. E. Royer;S. K. Park;S. Subramanian

  • Variations in semiconducting polymer microstructure and hole mobility with spin-coating speed

    Dean M. Delongchamp;Brandon M. Vogel;Youngsuk Jung;Marc C. Gurau

  • A Flexible Solution-Processed Memristor

    N. Gergel-Hackett;B. Hamadani;B. Dunlap;J. Suehle

  • New resistivity for high-mobility quantum Hall conductors.

    P. L. McEuen;A. Szafer;C. A. Richter;B. W. Alphenaar

  • Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

    Rusen Yan;Qin Zhang;Wei Li;Irene Calizo

  • Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties

    Yong J. Cho;Nhan V. Nguyen;Curt A. Richter;James R. Ehrstein

  • How to report and benchmark emerging field-effect transistors

    Unknown

  • Controllable, Wide-Ranging n-Doping and p-Doping of Monolayer Group 6 Transition-Metal Disulfides and Diselenides.

    Siyuan Zhang;Heather M. Hill;Karttikay Moudgil;Curt A. Richter

  • Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors

    Sang-Mo Koo;Monica D Edelstein;Qiliang Li;Curt A Richter

  • Enhanced channel modulation in dual-gated silicon nanowire transistors.

    Sang-Mo Koo;Qiliang Li;Monica D. Edelstein;Curt A. Richter

  • Ultraviolet/ozone treatment to reduce metal-graphene contact resistance

    Wei Li;Yiran Liang;Dangmin Yu;Lianmao Peng

  • UV/Ozone treatment to reduce metal-graphene contact resistance

    Wei Li;Yiran Liang;Dangmin Yu;Lianmao Peng

  • Broadband optical properties of large-area monolayer CVD molybdenum disulfide

    Wei Li;A. Glen Birdwell;Matin Amani;Robert A. Burke

  • Broadband optical properties of large-area monolayer CVD molybdenum disulfide

    Wei Li;Wei Li;A. Glen Birdwell;Matin Amani;Robert A. Burke

  • Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics

    E.M. Vogel;W.K. Henson;C.A. Richter;J.S. Suehle

  • Influence of metal-MoS2 interface on MoS2 transistor performance: comparison of Ag and Ti contacts.

    Hui Yuan;Guangjun Cheng;Lin You;Haitao Li;Haitao Li

  • High inversion current in silicon nanowire field effect transistors

    Sang-Mo Koo;Akira Fujiwara;Jin-Ping Han;Eric M. Vogel

  • Influence of a water rinse on the structure and properties of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) films.

    Dean M. DeLongchamp;Bryan D. Vogt;Charles M. Brooks;Kenji Kano

  • A comparison of quantum-mechanical capacitance-voltage simulators

    C.A. Richter;A.R. Hefner;E.M. Vogel

  • Topological insulator Bi2Se3 nanowire high performance field-effect transistors.

    Hao Zhu;Hao Zhu;Curt A. Richter;Erhai Zhao;John E. Bonevich

  • Comparison of Si-O-C interfacial bonding of alcohols and aldehydes on Si(111) formed from dilute solution with ultraviolet irradiation.

    Christina A. Hacker;Kelly A. Anderson;Lee J. Richter;Curt A. Richter

Frequent Co-Authors

David J. Gundlach
David J. Gundlach National Institute of Standards and Technology
John S. Suehle
John S. Suehle National Institute of Standards and Technology
Oana D. Jurchescu
Oana D. Jurchescu Wake Forest University
Eric M. Vogel
Eric M. Vogel Georgia Institute of Technology
Lee J. Richter
Lee J. Richter National Institute of Standards and Technology
Lian-Mao Peng
Lian-Mao Peng Peking University
Alan Seabaugh
Alan Seabaugh University of Notre Dame
Takhee Lee
Takhee Lee Seoul National University
Woong-Ki Hong
Woong-Ki Hong Gwangju Institute of Science and Technology
Thomas N. Jackson
Thomas N. Jackson Pennsylvania State University

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