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Materials Science

D-Index
45
Citations
8575
World Ranking
11682
National Ranking
2729

Overview

Curt A. Richter is affiliated with the National Institute of Standards and Technology in the United States. Their research spans various fields focusing on engineering, materials science, and physics and astronomy, with particular emphasis on electrical and electronic engineering, materials chemistry, atomic and molecular physics and optics, biomedical engineering, and bioengineering.

Richter's scholarly output includes 29 publications in engineering, 19 in materials science, and 18 in physics and astronomy. Their subfield contributions are concentrated in electrical and electronic engineering (26 publications), materials chemistry (18 publications), and atomic and molecular physics and optics (16 publications), alongside works in biomedical and bioengineering.

The scientist's research focuses on multiple topics including graphene research and applications, quantum and electron transport phenomena, semiconductor materials and devices, advancements in semiconductor devices and circuit design, 2D materials and applications, ferroelectric and negative capacitance devices, and MXene and MAX phase materials.

Frequent collaborators of Curt A. Richter include Son T. Le, Aaron D. Franklin, A. Zaslavsky, Zhihui Cheng, and Albert V. Davydov.

Richter's recent publication venues reflect their interdisciplinary scope and include:

  • arXiv (Cornell University)
  • Applied Physics Letters
  • AIP Advances
  • Physical Review B
  • Nature Electronics

Notable recent papers authored or coauthored by Richter include:

  • "How to report and benchmark emerging field-effect transistors," 2022, Nature Electronics
  • "Substrate-mediated hyperbolic phonon polaritons in MoO3," 2021, Nanophotonics
  • "Are 2D Interfaces Really Flat?," 2022, ACS Nano
  • "Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping," 2022, AIP Advances
  • "Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications," 2021, Applied Physics Letters

Best Publications

  • Toward Clean and Crackless Transfer of Graphene

    Xuelei Liang;Xuelei Liang;Brent A. Sperling;Irene Calizo;Guangjun Cheng

  • Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits.

    D. J. Gundlach;J. E. Royer;S. K. Park;S. Subramanian

  • Variations in semiconducting polymer microstructure and hole mobility with spin-coating speed

    Dean M. Delongchamp;Brandon M. Vogel;Youngsuk Jung;Marc C. Gurau

  • A Flexible Solution-Processed Memristor

    N. Gergel-Hackett;B. Hamadani;B. Dunlap;J. Suehle

  • New resistivity for high-mobility quantum Hall conductors.

    P. L. McEuen;A. Szafer;C. A. Richter;B. W. Alphenaar

  • Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

    Rusen Yan;Qin Zhang;Wei Li;Irene Calizo

  • Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical properties

    Yong J. Cho;Nhan V. Nguyen;Curt A. Richter;James R. Ehrstein

  • How to report and benchmark emerging field-effect transistors

    Unknown

  • Controllable, Wide-Ranging n-Doping and p-Doping of Monolayer Group 6 Transition-Metal Disulfides and Diselenides.

    Siyuan Zhang;Heather M. Hill;Karttikay Moudgil;Curt A. Richter

  • Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors

    Sang-Mo Koo;Monica D Edelstein;Qiliang Li;Curt A Richter

  • Enhanced channel modulation in dual-gated silicon nanowire transistors.

    Sang-Mo Koo;Qiliang Li;Monica D. Edelstein;Curt A. Richter

  • Ultraviolet/ozone treatment to reduce metal-graphene contact resistance

    Wei Li;Yiran Liang;Dangmin Yu;Lianmao Peng

  • UV/Ozone treatment to reduce metal-graphene contact resistance

    Wei Li;Yiran Liang;Dangmin Yu;Lianmao Peng

  • Broadband optical properties of large-area monolayer CVD molybdenum disulfide

    Wei Li;A. Glen Birdwell;Matin Amani;Robert A. Burke

  • Broadband optical properties of large-area monolayer CVD molybdenum disulfide

    Wei Li;Wei Li;A. Glen Birdwell;Matin Amani;Robert A. Burke

  • Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics

    E.M. Vogel;W.K. Henson;C.A. Richter;J.S. Suehle

  • Influence of metal-MoS2 interface on MoS2 transistor performance: comparison of Ag and Ti contacts.

    Hui Yuan;Guangjun Cheng;Lin You;Haitao Li;Haitao Li

  • High inversion current in silicon nanowire field effect transistors

    Sang-Mo Koo;Akira Fujiwara;Jin-Ping Han;Eric M. Vogel

  • Influence of a water rinse on the structure and properties of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) films.

    Dean M. DeLongchamp;Bryan D. Vogt;Charles M. Brooks;Kenji Kano

  • A comparison of quantum-mechanical capacitance-voltage simulators

    C.A. Richter;A.R. Hefner;E.M. Vogel

  • Topological insulator Bi2Se3 nanowire high performance field-effect transistors.

    Hao Zhu;Hao Zhu;Curt A. Richter;Erhai Zhao;John E. Bonevich

  • Comparison of Si-O-C interfacial bonding of alcohols and aldehydes on Si(111) formed from dilute solution with ultraviolet irradiation.

    Christina A. Hacker;Kelly A. Anderson;Lee J. Richter;Curt A. Richter

Frequent Co-Authors

David J. Gundlach
David J. Gundlach National Institute of Standards and Technology
John S. Suehle
John S. Suehle National Institute of Standards and Technology
Oana D. Jurchescu
Oana D. Jurchescu Wake Forest University
Eric M. Vogel
Eric M. Vogel Georgia Institute of Technology
Lee J. Richter
Lee J. Richter National Institute of Standards and Technology
Lian-Mao Peng
Lian-Mao Peng Peking University
Alan Seabaugh
Alan Seabaugh University of Notre Dame
Takhee Lee
Takhee Lee Seoul National University
Woong-Ki Hong
Woong-Ki Hong Gwangju Institute of Science and Technology
Thomas N. Jackson
Thomas N. Jackson Pennsylvania State University

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