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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
50
Citations
8028
World Ranking
2855
National Ranking
1074

Overview

John S. Suehle is affiliated with the National Institute of Standards and Technology in the United States. Their research contributions span multiple areas within engineering and physics, with a focus on topics related to nanostructures and electronic transport phenomena.

Their main fields of study include:

  • Engineering
  • Physics and Astronomy

Within these fields, Suehle has specialized in subfields such as:

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

The key topics they have worked on cover:

  • Molecular Junctions and Nanostructures
  • Quantum and Electron Transport Phenomena
  • Organic Electronics and Photovoltaics

John S. Suehle has coauthored publications with several researchers including:

  • Hyuk-Jae Jang
  • Oleg A. Kirillov
  • Curt A. Richter

Their research has been published in scientific venues such as:

  • The Journal of Physical Chemistry C

A recent paper authored by Suehle is titled Direct Electrical Measurements of Energy Bands in Organic Semiconductors by Device-Based Ballistic Carrier Emission Spectroscopy, published in 2020 in The Journal of Physical Chemistry C.

This publication addresses measurements in organic semiconductors, aligning with the scientist's focus on organic electronics and electron transport.

Best Publications

  • Tin oxide gas sensor fabricated using CMOS micro-hotplates and in-situ processing

    J.S. Suehle;R.E. Cavicchi;M. Gaitan;S. Semancik

  • Microhotplate Platforms for Chemical Sensor Research

    Stephen Semancik;Richard E. Cavicchi;M C. Wheeler;J E. Tiffany

  • A Flexible Solution-Processed Memristor

    N. Gergel-Hackett;B. Hamadani;B. Dunlap;J. Suehle

  • Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon

    J. Kolodzey;E.A. Chowdhury;T.N. Adam;Guohua Qui

  • Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

    Liangchun C Yu;G T Dunne;K S Matocha;Kin P Cheung

  • Disease detection and management via single nanopore-based sensors.

    Joseph E. Reiner;Arvind K. Balijepalli;Joseph W. Robertson;Jason P. Campbell

  • A monolithic CMOS microhotplate-based gas sensor system

    M.Y. Afridi;J.S. Suehle;M.E. Zaghloul;D.W. Berning

  • Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures

    S.C. Witczak;R.D. Schrimpf;D.M. Fleetwood;K.F. Galloway

  • Optimized temperature-pulse sequences for the enhancement of chemically specific response patterns from micro-hotplate gas sensors

    Richard E. Cavicchi;John S. Suehle;Kenneth G. Kreider;Michael Gaitan

  • Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$ – $V$ Techniques

    M. Gurfinkel;H.D. Xiong;K.P. Cheung;J.S. Suehle

  • Ultrathin gate oxide reliability: physical models, statistics, and characterization

    Unknown

  • Fast temperature programmed sensing for micro-hotplate gas sensors

    R.E. Cavicchi;J.S. Suehle;K.G. Kreider;M. Gaitan

  • Application of microsubstrates for materials processing

    Richard Cavicchi;Stephen Semancik;John S. Suehle;Michael Gaitan

  • An Experimental Comparison of Measurement Techniques to Extract Si-SiO2 Interface Trap Density

    Steven C. Witczak;John S. Suehle;Michael Gaitan

  • Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks

    S. Sayan;T. Emge;E. Garfunkel;Xinyuan Zhao

  • Gain degradation of lateral and substrate pnp bipolar junction transistors

    S.C. Witczak;R.D. Schrimpf;K.F. Galloway;D.M. Fleetwood

  • Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics

    E.M. Vogel;W.K. Henson;C.A. Richter;J.S. Suehle

  • Temperature-controlled, micromachined arrays for chemical sensor fabrication and operation

    Stephen Semancik;Richard E. Cavicchi;Michael Gaitan;John S. Suehle

  • Field and temperature acceleration of time-dependent dielectric breakdown in intrinsic thin SiO/sub 2/

    J.S. Suehle;P. Chaparala;C. Messick;W.M. Miller

  • Hybrid postprocessing etching for CMOS-compatible MEMS

    N.H. Tea;V. Milanovic;C.A. Zincke;J.S. Suehle

  • Random telegraph noise in highly scaled nMOSFETs

    J.P. Campbell;J. Qin;K.P. Cheung;L.C. Yu

Frequent Co-Authors

Curt A. Richter
Curt A. Richter National Institute of Standards and Technology
Eric M. Vogel
Eric M. Vogel Georgia Institute of Technology
David J. Gundlach
David J. Gundlach National Institute of Standards and Technology
Neil Goldsman
Neil Goldsman University of Maryland, College Park
Mona E. Zaghloul
Mona E. Zaghloul George Washington University
Ichiro Takeuchi
Ichiro Takeuchi University of Maryland, College Park
John F. Conley
John F. Conley Oregon State University
Peide D. Ye
Peide D. Ye Purdue University West Lafayette
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Alan Seabaugh
Alan Seabaugh University of Notre Dame

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