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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
5269
World Ranking
5558
National Ranking
1906

Overview

Neil Goldsman is affiliated with the University of Maryland, College Park in the United States. Their research focuses on several fields within engineering and materials science, particularly emphasizing electrical and electronic engineering and biomedical engineering. The scientist's contributions span topics related to advanced semiconductor materials and devices as well as radiation effects in electronics.

Goldsman's work addresses key topics including:

  • Ga2O3 and related materials
  • Silicon Carbide Semiconductor Technologies
  • Photocathodes and Microchannel Plates
  • GaN-based semiconductor devices and materials
  • ZnO doping and properties
  • Radiation Effects in Electronics
  • Nuclear reactor physics and engineering

Frequent co-authors in Goldsman's publications include Akin Akturk, Zeynep Dilli, Y. Cui, C. Darmody, and Prabal Saxena. These collaborations have contributed to diverse topics in semiconductor research and device optimization.

Their recent papers demonstrate an ongoing engagement with semiconductor device physics and materials characterization, including:

  • Investigation of Wide- and Ultrawide-Bandgap Semiconductors From Impact-Ionization Coefficients, 2020, IEEE Transactions on Electron Devices
  • Energy Dependence of Atmospheric Neutron-Induced Failures in Silicon Carbide Power Devices, 2022, IEEE Transactions on Nuclear Science
  • Effects of Fermi pinning and quantum mechanisms on leakage current of 4H-SiC Schottky diodes, 2022, Journal of Applied Physics
  • Temperature Dependent Characterization-based Design Optimization of a DC-DC Converter for High-Temperature Applications, 2022, 2022 IEEE Applied Power Electronics Conference and Exposition (APEC)
  • Comparison of contact metals evaporated onto monolayer molybdenum disulfide, 2022, Journal of Applied Physics

Goldsman commonly publishes in scientific venues such as the Journal of Applied Physics, IEEE Transactions on Electron Devices, IEEE Transactions on Nuclear Science, and proceedings from the IEEE Applied Power Electronics Conference and Exposition (APEC), reflecting a focus on applied physics and electrical engineering disciplines.

Their research contributions primarily address engineering challenges in advanced materials and semiconductor technologies, including device performance under radiation, high-temperature operation, and materials characterization for next-generation electronic components.

Best Publications

  • Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

    A.J. Lelis;D. Habersat;R. Green;A. Ogunniyi

  • Electron transport and full-band electron-phonon interactions in graphene

    Akin Akturk;Neil Goldsman

  • Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes

    G. Pennington;N. Goldsman

  • A Physical Model of High Temperature 4H-SiC MOSFETs

    S. Potbhare;N. Goldsman;A. Lelis;J.M. McGarrity

  • F-inverted compact antenna for wireless sensor networks and manufacturing method

    Bo Yang;Felice M. Vanin;Xi Shao;Quirino Balzano

  • Thin flexible rechargeable electrochemical energy cell and method of fabrication

    Martin C. Peckerar;Neil Goldsman;Yves Ngu;Zeynep Dilli

  • Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$ – $V$ Techniques

    M. Gurfinkel;H.D. Xiong;K.P. Cheung;J.S. Suehle

  • Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs

    A. Akturk;J. M. McGarrity;S. Potbhare;N. Goldsman

  • An Antenna Co-Design Dual Band RF Energy Harvester

    Bo Li;Xi Shao;Negin Shahshahan;Neil Goldsman

  • Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

    Siddharth Potbhare;Neil Goldsman;Gary Pennington;Aivars Lelis

  • A physics-based analytical/numerical solution to the Boltzmann transport equation for use in device simulation

    Neil Goldsman;Lindor Henrickson;Jeffrey Frey

  • Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistors

    Stephen K. Powell;Neil Goldsman;James M. McGarrity;Joseph Bernstein

  • Device Modeling at Cryogenic Temperatures: Effects of Incomplete Ionization

    A. Akturk;J. Allnutt;Z. Dilli;N. Goldsman

  • A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

    A. Abramo;L. Baudry;R. Brunetti;R. Castagne

  • Electron Transport and Velocity Oscillations in a Carbon Nanotube

    A.. Akturk;G.. Pennington;N.. Goldsman;A.. Wickenden

  • 2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and hole-continuity equations

    Wenchao Liang;N. Goldsman;I. Mayergoyz;P.J. Oldiges

  • A Focused Asymmetric Metal–Insulator–Metal Tunneling Diode: Fabrication, DC Characteristics and RF Rectification Analysis

    Kwangsik Choi;F. Yesilkoy;Geunmin Ryu;Si Hyung Cho

  • Rf power harvesting circuit

    Thomas Steven Salter;George M. Metze;Neil Goldsman;Kwangsik Choi

  • Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs

    Aivars J. Lelis;Daniel B. Habersat;G. Lopez;J.M. McGarrity

  • Efficient calculation of ionization coefficients in silicon from the energy distribution function

    Neil Goldsman;Yu‐Jen Wu;Jeffrey Frey

  • CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics

    N. K. Dhar;P. R. Boyd;M. Martinka;J. H. Dinan

  • Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability

    Aivars J. Lelis;Daniel B. Habersat;Ronald Green;Neil Goldsman

  • Self-consistent modeling of heating and MOSFET performance in 3-D integrated circuits

    A. Akturk;N. Goldsman;G. Metze

Frequent Co-Authors

Shuvra S. Bhattacharyya
Shuvra S. Bhattacharyya University of Maryland, College Park
John S. Suehle
John S. Suehle National Institute of Standards and Technology
Omar M. Ramahi
Omar M. Ramahi University of Waterloo
Jimmy Xu
Jimmy Xu Brown University
Anant K. Agarwal
Anant K. Agarwal The Ohio State University
Madan Dubey
Madan Dubey United States Army Research Laboratory
Edl Schamiloglu
Edl Schamiloglu University of New Mexico
David J. Gundlach
David J. Gundlach National Institute of Standards and Technology
Zhong Lin Wang
Zhong Lin Wang Georgia Institute of Technology

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