The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Neil Goldsman sits on this spectrum.
This scientist: 294 publications — 56th percentile
56% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Neil Goldsman sits on this spectrum.
This scientist: 35 D-Index — 21st percentile
21% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Neil Goldsman is affiliated with the University of Maryland, College Park in the United States. Their research focuses on several fields within engineering and materials science, particularly emphasizing electrical and electronic engineering and biomedical engineering. The scientist's contributions span topics related to advanced semiconductor materials and devices as well as radiation effects in electronics.
Goldsman's work addresses key topics including:
Frequent co-authors in Goldsman's publications include Akin Akturk, Zeynep Dilli, Y. Cui, C. Darmody, and Prabal Saxena. These collaborations have contributed to diverse topics in semiconductor research and device optimization.
Their recent papers demonstrate an ongoing engagement with semiconductor device physics and materials characterization, including:
Goldsman commonly publishes in scientific venues such as the Journal of Applied Physics, IEEE Transactions on Electron Devices, IEEE Transactions on Nuclear Science, and proceedings from the IEEE Applied Power Electronics Conference and Exposition (APEC), reflecting a focus on applied physics and electrical engineering disciplines.
Their research contributions primarily address engineering challenges in advanced materials and semiconductor technologies, including device performance under radiation, high-temperature operation, and materials characterization for next-generation electronic components.
A.J. Lelis;D. Habersat;R. Green;A. Ogunniyi
Akin Akturk;Neil Goldsman
G. Pennington;N. Goldsman
S. Potbhare;N. Goldsman;A. Lelis;J.M. McGarrity
Bo Yang;Felice M. Vanin;Xi Shao;Quirino Balzano
Martin C. Peckerar;Neil Goldsman;Yves Ngu;Zeynep Dilli
M. Gurfinkel;H.D. Xiong;K.P. Cheung;J.S. Suehle
A. Akturk;J. M. McGarrity;S. Potbhare;N. Goldsman
Bo Li;Xi Shao;Negin Shahshahan;Neil Goldsman
Siddharth Potbhare;Neil Goldsman;Gary Pennington;Aivars Lelis
Neil Goldsman;Lindor Henrickson;Jeffrey Frey
Stephen K. Powell;Neil Goldsman;James M. McGarrity;Joseph Bernstein
A. Akturk;J. Allnutt;Z. Dilli;N. Goldsman
A. Abramo;L. Baudry;R. Brunetti;R. Castagne
A.. Akturk;G.. Pennington;N.. Goldsman;A.. Wickenden
Wenchao Liang;N. Goldsman;I. Mayergoyz;P.J. Oldiges
Kwangsik Choi;F. Yesilkoy;Geunmin Ryu;Si Hyung Cho
Thomas Steven Salter;George M. Metze;Neil Goldsman;Kwangsik Choi
Aivars J. Lelis;Daniel B. Habersat;G. Lopez;J.M. McGarrity
Neil Goldsman;Yu‐Jen Wu;Jeffrey Frey
N. K. Dhar;P. R. Boyd;M. Martinka;J. H. Dinan
Aivars J. Lelis;Daniel B. Habersat;Ronald Green;Neil Goldsman
A. Akturk;N. Goldsman;G. Metze
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