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Giorgio Baccarani

Giorgio Baccarani

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
44
Citations
7657
World Ranking
3743
National Ranking
115

Giorgio Baccarani publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Giorgio Baccarani sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 309 publications — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Giorgio Baccarani D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Giorgio Baccarani sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 44 D-Index — 47th percentile

47% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 1999 - IEEE Fellow For contributions to the scaled silicon device theory.

Overview

Giorgio Baccarani is affiliated with the University of Bologna in Italy. Their research primarily spans the fields of Engineering, Computer Science, and Materials Science, with a focus on several specialized subfields.

The main subfields of study include:

  • Electrical and Electronic Engineering
  • Hardware and Architecture
  • Biomedical Engineering
  • Materials Chemistry

Their work covers a variety of topics related to semiconductor technologies and circuit design. Major topics of research are:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • VLSI and Analog Circuit Testing
  • Analog and Mixed-Signal Circuit Design

Baccarani has collaborated frequently with other researchers, including:

  • Elena Gnani
  • Susanna Reggiani
  • A. Gnudi
  • M. Rudan
  • Tommaso Ugolini

There is no available information about recent paper titles, publication venues, or book publications associated with Baccarani.

In recognition of contributions to the field, Giorgio Baccarani was awarded the IEEE Fellow distinction in 1999 for work related to scaled silicon device theory.

Best Publications

  • Transport properties of polycrystalline silicon films

    G. Baccarani;B. Riccò;G. Spadini

  • Generalized scaling theory and its application to a ¼ micrometer MOSFET design

    Unknown

  • An investigation of steady-state velocity overshoot in silicon

    Unknown

  • Theory of the Junctionless Nanowire FET

    E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani

  • A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects

    G. Baccarani;S. Reggiani

  • A new discretization strategy of the semiconductor equations comprising momentum and energy balance

    A. Forghieri;R. Guerrieri;P. Ciampolini;A. Gnudi

  • Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation

    A. Gnudi;D. Ventura;G. Baccarani;F. Odeh

  • Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs

    A. Gnudi;S. Reggiani;E. Gnani;G. Baccarani

  • Floating body effects in polysilicon thin-film transistors

    M. Valdinoci;L. Colalongo;G. Baccarani;G. Fortunato

  • Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors

    A. Gnudi;S. Reggiani;E. Gnani;G. Baccarani

  • Transconductance degradation in thin-Oxide MOSFET's

    G. Baccarani;M.R. Wordeman

  • Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility

    S. Reggiani;M. Valdinoci;L. Colalongo;M. Rudan

  • Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

    Giovanni Betti Beneventi;Elena Gnani;Antonio Gnudi;Susanna Reggiani

  • Current transport in narrow-base transistors

    G. Baccarani;C. Jacoboni;A.M. Mazzone

  • Multidimensional spherical harmonics expansion of Boltzmann equation for transport in semiconductors

    D. Ventura;A. Gnudi;G. Baccarani;F. Odeh

  • Electron mobility empirically related to the phosphorus concentration in silicon

    Unknown

  • Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

    M. Lenzi;P. Palestri;E. Gnani;S. Reggiani

  • Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs With Extremely Small Silicon Thicknesses

    S.. Reggiani;E.. Gnani;A.. Gnudi;M.. Rudan

  • TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors

    S. Reggiani;G. Barone;S. Poli;E. Gnani

  • Band-Structure Effects in Ultrascaled Silicon Nanowires

    E. Gnani;S. Reggiani;A. Gnudi;P. Parruccini

  • Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell

    J. Fu;N. Singh;K.D. Buddharaju;S.H.G. Teo

  • Numerical analysis of poly-TFTs under off conditions

    L Colalongo;M Valdinoci;G Baccarani;P Migliorato

  • Physical Model of the Junctionless UTB SOI-FET

    E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani

  • An enhanced two-level Boolean synthesis methodology for fuzzy rules minimization

    R. Rovatti;R. Guerrieri;G. Baccarani

  • Two-dimensional NOSFET Simulation by means of Multidimensional Spherical Harmonics Expansion of the Boltzmann Transport Equation

    A. Gnudi;D. Ventura;G. Baccarani;F. Odeh

Frequent Co-Authors

Susanna Reggiani
Susanna Reggiani University of Bologna
Elena Gnani
Elena Gnani University of Bologna
Roberto Guerrieri
Roberto Guerrieri University of Bologna
Riccardo Rovatti
Riccardo Rovatti University of Bologna
Navab Singh
Navab Singh Agency for Science, Technology and Research
Guo-Qiang Lo
Guo-Qiang Lo Global Foundries
Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Luca Selmi
Luca Selmi University of Modena and Reggio Emilia
Pierpaolo Palestri
Pierpaolo Palestri University of Udine

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