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Giorgio Baccarani

Giorgio Baccarani

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
44
Citations
7657
World Ranking
3743
National Ranking
115

Research.com Recognitions

  • 1999 - IEEE Fellow For contributions to the scaled silicon device theory.

Overview

Giorgio Baccarani is affiliated with the University of Bologna in Italy. Their research primarily spans the fields of Engineering, Computer Science, and Materials Science, with a focus on several specialized subfields.

The main subfields of study include:

  • Electrical and Electronic Engineering
  • Hardware and Architecture
  • Biomedical Engineering
  • Materials Chemistry

Their work covers a variety of topics related to semiconductor technologies and circuit design. Major topics of research are:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • VLSI and Analog Circuit Testing
  • Analog and Mixed-Signal Circuit Design

Baccarani has collaborated frequently with other researchers, including:

  • Elena Gnani
  • Susanna Reggiani
  • A. Gnudi
  • M. Rudan
  • Tommaso Ugolini

There is no available information about recent paper titles, publication venues, or book publications associated with Baccarani.

In recognition of contributions to the field, Giorgio Baccarani was awarded the IEEE Fellow distinction in 1999 for work related to scaled silicon device theory.

Best Publications

  • Transport properties of polycrystalline silicon films

    G. Baccarani;B. Riccò;G. Spadini

  • Generalized scaling theory and its application to a ¼ micrometer MOSFET design

    Unknown

  • An investigation of steady-state velocity overshoot in silicon

    Unknown

  • Theory of the Junctionless Nanowire FET

    E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani

  • A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects

    G. Baccarani;S. Reggiani

  • A new discretization strategy of the semiconductor equations comprising momentum and energy balance

    A. Forghieri;R. Guerrieri;P. Ciampolini;A. Gnudi

  • Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation

    A. Gnudi;D. Ventura;G. Baccarani;F. Odeh

  • Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs

    A. Gnudi;S. Reggiani;E. Gnani;G. Baccarani

  • Floating body effects in polysilicon thin-film transistors

    M. Valdinoci;L. Colalongo;G. Baccarani;G. Fortunato

  • Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors

    A. Gnudi;S. Reggiani;E. Gnani;G. Baccarani

  • Transconductance degradation in thin-Oxide MOSFET's

    G. Baccarani;M.R. Wordeman

  • Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility

    S. Reggiani;M. Valdinoci;L. Colalongo;M. Rudan

  • Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

    Giovanni Betti Beneventi;Elena Gnani;Antonio Gnudi;Susanna Reggiani

  • Current transport in narrow-base transistors

    G. Baccarani;C. Jacoboni;A.M. Mazzone

  • Multidimensional spherical harmonics expansion of Boltzmann equation for transport in semiconductors

    D. Ventura;A. Gnudi;G. Baccarani;F. Odeh

  • Electron mobility empirically related to the phosphorus concentration in silicon

    Unknown

  • Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

    M. Lenzi;P. Palestri;E. Gnani;S. Reggiani

  • Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs With Extremely Small Silicon Thicknesses

    S.. Reggiani;E.. Gnani;A.. Gnudi;M.. Rudan

  • TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors

    S. Reggiani;G. Barone;S. Poli;E. Gnani

  • Band-Structure Effects in Ultrascaled Silicon Nanowires

    E. Gnani;S. Reggiani;A. Gnudi;P. Parruccini

  • Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell

    J. Fu;N. Singh;K.D. Buddharaju;S.H.G. Teo

  • Numerical analysis of poly-TFTs under off conditions

    L Colalongo;M Valdinoci;G Baccarani;P Migliorato

  • Physical Model of the Junctionless UTB SOI-FET

    E. Gnani;A. Gnudi;S. Reggiani;G. Baccarani

  • An enhanced two-level Boolean synthesis methodology for fuzzy rules minimization

    R. Rovatti;R. Guerrieri;G. Baccarani

  • Two-dimensional NOSFET Simulation by means of Multidimensional Spherical Harmonics Expansion of the Boltzmann Transport Equation

    A. Gnudi;D. Ventura;G. Baccarani;F. Odeh

Frequent Co-Authors

Susanna Reggiani
Susanna Reggiani University of Bologna
Elena Gnani
Elena Gnani University of Bologna
Roberto Guerrieri
Roberto Guerrieri University of Bologna
Riccardo Rovatti
Riccardo Rovatti University of Bologna
Navab Singh
Navab Singh Agency for Science, Technology and Research
Guo-Qiang Lo
Guo-Qiang Lo Global Foundries
Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Luca Selmi
Luca Selmi University of Modena and Reggio Emilia
Pierpaolo Palestri
Pierpaolo Palestri University of Udine

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