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Wolfgang Fichtner

Wolfgang Fichtner

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
73
Citations
21023
World Ranking
755
National Ranking
21

Research.com Recognitions

  • 2011 - ACM Gordon Bell Prize For "Atomistic nanoelectronics device engineering with sustained performance up to 1.44 Pflops"

Overview

Wolfgang Fichtner is affiliated with ETH Zurich in Switzerland. Their research profile is marked by a notable achievement in the form of the ACM Gordon Bell Prize, awarded in 2011 for "Atomistic nanoelectronics device engineering with sustained performance up to 1.44 Pflops." This award highlights their work in the field of high-performance computing applied to nanoelectronics device engineering.

While detailed data on recent papers, co-authors, and publication venues is not available, Wolfgang Fichtner's primary institutional affiliation situates them within a leading technological university known for advanced research in engineering and natural sciences.

The specific fields, subfields, and main topics of study related to Wolfgang Fichtner's research have not been explicitly detailed. However, the recognition received through the ACM Gordon Bell Prize indicates involvement in computational science and nanoelectronics, focusing on cutting-edge device engineering and performance optimization at the atomic scale.

No information is available regarding book publications or frequent co-authors. The lack of listed recent papers or frequent publication venues provides limited insight into their ongoing research output, but the notable award suggests an active engagement with computational methodologies in electronics.

Wolfgang Fichtner remains active in their academic role and research endeavors at ETH Zurich.

Best Publications

  • Low-power logic styles: CMOS versus pass-transistor logic

    R. Zimmermann;W. Fichtner

  • VLSI implementation of MIMO detection using the sphere decoding algorithm

    A. Burg;M. Borgmann;M. Wenk;M. Zellweger

  • Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism: From boundary conditions to strain calculations

    Mathieu Luisier;Andreas Schenk;Wolfgang Fichtner;Gerhard Klimeck

  • Numerical methods for semiconductor device simulation

    R.E. Bank;D.J. Rose;W. Fichtner

  • Practical design of globally-asynchronous locally-synchronous systems

    J. Muttersbach;T. Villiger;W. Fichtner

  • Generalized guide for MOSFET miniaturization

    Unknown

  • PARDISO: a high-performance serial and parallel sparse linear solver in semiconductor device simulation

    Olaf Schenk;Klaus Gärtner;Wolfgang Fichtner;Andreas Stricker

  • An Attempt to Model the Human Body as a Communication Channel

    M.S. Wegmueller;A. Kuhn;J. Froehlich;M. Oberle

  • A survey on electricity market design: Insights from theory and real-world implementations of capacity remuneration mechanisms

    Andreas Bublitz;Dogan Keles;Florian Zimmermann;Christoph Fraunholz

  • Efficient Sparse LU Factorization with Left-Right Looking Strategy on Shared Memory Multiprocessors

    O. Schenk;K. Gärtner;W. Fichtner

  • Agent-based modelling and simulation of smart electricity grids and markets – A literature review

    Philipp Ringler;Dogan Keles;Wolf Fichtner

  • Signal Transmission by Galvanic Coupling Through the Human Body

    M.S. Wegmueller;M. Oberle;N. Felber;N. Kuster

  • Quantum device-simulation with the density-gradient model on unstructured grids

    A. Wettstein;A. Schenk;W. Fichtner

  • K-best MIMO detection VLSI architectures achieving up to 424 Mbps

    M. Wenk;M. Zellweger;A. Burg;N. Felber

  • Quantum transport in two- and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green's function formalism

    Mathieu Luisier;Andreas Schenk;Wolfgang Fichtner

  • Thermal component model for electrothermal analysis of IGBT module systems

    Chan-Su Yun;P. Malberti;M. Ciappa;W. Fichtner

  • Semiconductor device simulation

    W. Fichtner;D.J. Rose;R.E. Bank

  • Lifetime prediction and design of reliability tests for high-power devices in automotive applications

    M. Ciappa;F. Carbognani;W. Fichtner

  • Analysis of lateral DMOS power devices under ESD stress conditions

    M.P.J. Mergens;W. Wilkening;S. Mettler;H. Wolf

  • A 177 Mb/s VLSI implementation of the International Data Encryption Algorithm

    R. Zimmermann;A. Curiger;H. Bonnenberg;H. Kaeslin

  • Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility

    S. Reggiani;M. Valdinoci;L. Colalongo;M. Rudan

  • Globally-asynchronous locally-synchronous architectures to simplify the design of on-chip systems

    J. Muttersbach;T. Villiger;H. Kaeslin;N. Felber

  • Lifetime prediction of IGBT modules for traction applications

    M. Ciappa;W. Fichtner

  • Parasitic modes on printed circuit boards and their effects on EMC and signal integrity

    C. Schuster;W. Fichtner

Frequent Co-Authors

Andreas Burg
Andreas Burg École Polytechnique Fédérale de Lausanne
Alberto Castellazzi
Alberto Castellazzi Kyoto University of Advanced Science
Niels Kuster
Niels Kuster ETH Zurich
Giorgio Baccarani
Giorgio Baccarani University of Bologna
Susanna Reggiani
Susanna Reggiani University of Bologna
Elena Gnani
Elena Gnani University of Bologna
Gerhard Klimeck
Gerhard Klimeck Purdue University West Lafayette
Filippo Giannazzo
Filippo Giannazzo National Research Council (CNR)

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