World's Best Scientists 2026 revealed!
Pierpaolo Palestri

Pierpaolo Palestri

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
5466
World Ranking
5344
National Ranking
221

Pierpaolo Palestri publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Pierpaolo Palestri sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 356 publications — 68th percentile

68% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Pierpaolo Palestri D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Pierpaolo Palestri sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Pierpaolo Palestri is affiliated with the University of Udine in Italy and works primarily within the field of Engineering, with a focus on Electrical and Electronic Engineering as well as related subfields including Atomic and Molecular Physics, Bioengineering, Biomedical Engineering, and Electrochemistry.

Their research covers several main topics, specifically:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor Materials and Devices
  • Analytical Chemistry and Sensors
  • Integrated Circuits and Semiconductor Failure Analysis
  • Electrochemical Analysis and Applications
  • Advanced Memory and Neural Computing
  • Neuroscience and Neural Engineering

Palestri has published multiple papers in notable venues. Among the recent papers are:

  • "Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures," 2023, IEEE Transactions on Electron Devices
  • "Sensitivity, Noise and Resolution in a BEOL-Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications," 2021, Sensors
  • "The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems," 2020, IEEE Transactions on Electron Devices
  • "New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications," 2022, 2022 International Electron Devices Meeting (IEDM)
  • "Dependability Assessment of Transfer Length Method to Extract the Metal-Graphene Contact Resistance," 2020, IEEE Transactions on Semiconductor Manufacturing

The frequent publication venues for Palestri include:

  • Solid-State Electronics
  • IEEE Transactions on Electron Devices
  • IEEE Sensors Journal
  • Sensors
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Among the frequent co-authors working alongside Palestri are:

  • L. Selmi
  • Leandro Julian Mele
  • David Esseni
  • F. Driussi
  • R. Asanovski

Best Publications

  • Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes

    Anderson Smith;Frank Niklaus;A. Paussa;Sam Vaziri

  • Nanoscale MOS Transistors: Semi-Classical Transport and Applications

    David Esseni;Pierpaolo Palestri;Luca Selmi

  • Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain

    P. Palestri;D. Esseni;S. Eminente;C. Fiegna

  • Nanoscale MOS Transistors

    Unknown

  • Multisubband Monte Carlo Study of Transport, Quantization, and Electron-Gas Degeneration in Ultrathin SOI n-MOSFETs

    L. Lucci;P. Palestri;D. Esseni;L. Bergagnini

  • A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces

    Andrea Bandiziol;Pierpaolo Palestri;Federico Pittino;David Esseni

  • Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

    M. Lenzi;P. Palestri;E. Gnani;S. Reggiani

  • Modeling, design and characterization of a new low jitter analog dual tuning LC-VCO PLL architecture

    R. Nonis;N. Da Dalt;P. Palestri;L. Selmi

  • A Design Methodology for MOS Current-Mode Logic Frequency Dividers

    R. Nonis;E. Palumbo;P. Palestri;L. Selmi

  • An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation

    P. Palestri;Simone Eminente;D. Esseni;Claudio Fiegna

  • Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells

    Sebastiano Strangio;Pierpaolo Palestri;David Esseni;Luca Selmi

  • Linear combination of bulk bands method for investigating the low-dimensional electron gas in nanostructured devices

    David Esseni;Pierpaolo Palestri

  • Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain

    Marco Lanuzza;Sebastiano Strangio;Felice Crupi;Pierpaolo Palestri

  • On the Apparent Mobility in Nanometric n-MOSFETs

    M. Zilli;D. Esseni;P. Palestri;L. Selmi

  • Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS

    S. Eminente;D. Esseni;P. Palestri;C. Fiegna

  • Digital and analog TFET circuits: Design and benchmark

    Sebastiano Strangio;Sebastiano Strangio;Francesco Settino;Francesco Settino;P. Palestri;M. Lanuzza

  • A review of selected topics in physics based modeling for tunnel field-effect transistors

    David Esseni;Marco Pala;Pierpaolo Palestri;Cem Alper

  • Closed- and open-boundary models for gate-current calculation in n-MOSFETs

    A. Dalla Serra;A. Abramo;P. Palestri;L. Selmi

  • Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells

    E. Vianello;F. Driussi;A. Arreghini;P. Palestri

  • Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs—Part II: Atomistic and Electrical Modeling

    E. Vianello;F. Driussi;P. Blaise;P. Palestri

  • Simple and efficient modeling of the E-k relationship and low-field mobility in Graphene Nano-Ribbons

    Marco Bresciani;Pierpaolo Palestri;David Esseni;Luca Selmi

  • Validity of the Parabolic Effective Mass Approximation in Silicon and Germanium n-MOSFETs With Different Crystal Orientations

    J.-L.P.J. van der Steen;D. Esseni;P. Palestri;L. Selmi

Frequent Co-Authors

Luca Selmi
Luca Selmi University of Modena and Reggio Emilia
David Esseni
David Esseni University of Udine
Claudio Fiegna
Claudio Fiegna University of Bologna
Adrian M. Ionescu
Adrian M. Ionescu École Polytechnique Fédérale de Lausanne
Felice Crupi
Felice Crupi University of Calabria
Elena Gnani
Elena Gnani University of Bologna
Max C. Lemme
Max C. Lemme RWTH Aachen University
Susanna Reggiani
Susanna Reggiani University of Bologna
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Giuseppe Iannaccone
Giuseppe Iannaccone University of Pisa

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