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Pierpaolo Palestri

Pierpaolo Palestri

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
5466
World Ranking
5344
National Ranking
221

Overview

Pierpaolo Palestri is affiliated with the University of Udine in Italy and works primarily within the field of Engineering, with a focus on Electrical and Electronic Engineering as well as related subfields including Atomic and Molecular Physics, Bioengineering, Biomedical Engineering, and Electrochemistry.

Their research covers several main topics, specifically:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor Materials and Devices
  • Analytical Chemistry and Sensors
  • Integrated Circuits and Semiconductor Failure Analysis
  • Electrochemical Analysis and Applications
  • Advanced Memory and Neural Computing
  • Neuroscience and Neural Engineering

Palestri has published multiple papers in notable venues. Among the recent papers are:

  • "Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures," 2023, IEEE Transactions on Electron Devices
  • "Sensitivity, Noise and Resolution in a BEOL-Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications," 2021, Sensors
  • "The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems," 2020, IEEE Transactions on Electron Devices
  • "New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications," 2022, 2022 International Electron Devices Meeting (IEDM)
  • "Dependability Assessment of Transfer Length Method to Extract the Metal-Graphene Contact Resistance," 2020, IEEE Transactions on Semiconductor Manufacturing

The frequent publication venues for Palestri include:

  • Solid-State Electronics
  • IEEE Transactions on Electron Devices
  • IEEE Sensors Journal
  • Sensors
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Among the frequent co-authors working alongside Palestri are:

  • L. Selmi
  • Leandro Julian Mele
  • David Esseni
  • F. Driussi
  • R. Asanovski

Best Publications

  • Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes

    Anderson Smith;Frank Niklaus;A. Paussa;Sam Vaziri

  • Nanoscale MOS Transistors: Semi-Classical Transport and Applications

    David Esseni;Pierpaolo Palestri;Luca Selmi

  • Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain

    P. Palestri;D. Esseni;S. Eminente;C. Fiegna

  • Nanoscale MOS Transistors

    Unknown

  • Multisubband Monte Carlo Study of Transport, Quantization, and Electron-Gas Degeneration in Ultrathin SOI n-MOSFETs

    L. Lucci;P. Palestri;D. Esseni;L. Bergagnini

  • A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces

    Andrea Bandiziol;Pierpaolo Palestri;Federico Pittino;David Esseni

  • Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

    M. Lenzi;P. Palestri;E. Gnani;S. Reggiani

  • Modeling, design and characterization of a new low jitter analog dual tuning LC-VCO PLL architecture

    R. Nonis;N. Da Dalt;P. Palestri;L. Selmi

  • A Design Methodology for MOS Current-Mode Logic Frequency Dividers

    R. Nonis;E. Palumbo;P. Palestri;L. Selmi

  • An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation

    P. Palestri;Simone Eminente;D. Esseni;Claudio Fiegna

  • Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells

    Sebastiano Strangio;Pierpaolo Palestri;David Esseni;Luca Selmi

  • Linear combination of bulk bands method for investigating the low-dimensional electron gas in nanostructured devices

    David Esseni;Pierpaolo Palestri

  • Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain

    Marco Lanuzza;Sebastiano Strangio;Felice Crupi;Pierpaolo Palestri

  • On the Apparent Mobility in Nanometric n-MOSFETs

    M. Zilli;D. Esseni;P. Palestri;L. Selmi

  • Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS

    S. Eminente;D. Esseni;P. Palestri;C. Fiegna

  • Digital and analog TFET circuits: Design and benchmark

    Sebastiano Strangio;Sebastiano Strangio;Francesco Settino;Francesco Settino;P. Palestri;M. Lanuzza

  • A review of selected topics in physics based modeling for tunnel field-effect transistors

    David Esseni;Marco Pala;Pierpaolo Palestri;Cem Alper

  • Closed- and open-boundary models for gate-current calculation in n-MOSFETs

    A. Dalla Serra;A. Abramo;P. Palestri;L. Selmi

  • Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells

    E. Vianello;F. Driussi;A. Arreghini;P. Palestri

  • Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs—Part II: Atomistic and Electrical Modeling

    E. Vianello;F. Driussi;P. Blaise;P. Palestri

  • Simple and efficient modeling of the E-k relationship and low-field mobility in Graphene Nano-Ribbons

    Marco Bresciani;Pierpaolo Palestri;David Esseni;Luca Selmi

  • Validity of the Parabolic Effective Mass Approximation in Silicon and Germanium n-MOSFETs With Different Crystal Orientations

    J.-L.P.J. van der Steen;D. Esseni;P. Palestri;L. Selmi

Frequent Co-Authors

Luca Selmi
Luca Selmi University of Modena and Reggio Emilia
David Esseni
David Esseni University of Udine
Claudio Fiegna
Claudio Fiegna University of Bologna
Adrian M. Ionescu
Adrian M. Ionescu École Polytechnique Fédérale de Lausanne
Felice Crupi
Felice Crupi University of Calabria
Elena Gnani
Elena Gnani University of Bologna
Max C. Lemme
Max C. Lemme RWTH Aachen University
Susanna Reggiani
Susanna Reggiani University of Bologna
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Giuseppe Iannaccone
Giuseppe Iannaccone University of Pisa

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