D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Engineering and Technology D-index 32 Citations 4,314 232 World Ranking 4883 National Ranking 129

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Semiconductor

Francisco Gamiz spends much of his time researching Condensed matter physics, Electron mobility, Silicon on insulator, Silicon and MOSFET. Many of his research projects under Condensed matter physics are closely connected to Mott scattering with Mott scattering, tying the diverse disciplines of science together. His Electron mobility study incorporates themes from Phonon, Phonon scattering, Scattering, Electric field and Electron.

Silicon on insulator is a primary field of his research addressed under Optoelectronics. His research in Silicon intersects with topics in Scattering rate and Induced high electron mobility transistor. His MOSFET research integrates issues from Effective mass, Centroid and Electronic engineering.

His most cited work include:

  • On the enhanced electron mobility in strained-silicon inversion layers (215 citations)
  • Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates (189 citations)
  • Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion (139 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Silicon on insulator, Optoelectronics, Condensed matter physics, MOSFET and Electron mobility. His Silicon on insulator research also works with subjects such as

  • Transistor which is related to area like Quantum tunnelling,
  • Electronic engineering which intersects with area such as Scaling. His work deals with themes such as Threshold voltage and Capacitor, which intersect with Optoelectronics.

Francisco Gamiz has included themes like Charge density, Field-effect transistor, Electric field and Effective mass, Electron in his Condensed matter physics study. As a part of the same scientific family, Francisco Gamiz mostly works in the field of MOSFET, focusing on Poisson's equation and, on occasion, Schrödinger equation. His Electron mobility study combines topics from a wide range of disciplines, such as Phonon, Phonon scattering, Scattering, Silicon and Induced high electron mobility transistor.

He most often published in these fields:

  • Silicon on insulator (39.53%)
  • Optoelectronics (35.66%)
  • Condensed matter physics (34.88%)

What were the highlights of his more recent work (between 2015-2021)?

  • Optoelectronics (35.66%)
  • Quantum tunnelling (10.59%)
  • Transistor (24.29%)

In recent papers he was focusing on the following fields of study:

His primary areas of investigation include Optoelectronics, Quantum tunnelling, Transistor, Dram and Logic gate. His Optoelectronics research is multidisciplinary, relying on both Quantum and Voltage. The Transistor study combines topics in areas such as Computational physics, Work, Noise, Condensed matter physics and Electronic engineering.

His work is dedicated to discovering how Computational physics, MOSFET are connected with Scaling and other disciplines. His Charge density research extends to the thematically linked field of Condensed matter physics. His studies deal with areas such as Silicon on insulator, Random access memory and Reading as well as Logic gate.

Between 2015 and 2021, his most popular works were:

  • Mechanical and thermal properties of graphene modified asphalt binders (30 citations)
  • Extended Analysis of the $Z^{2}$ -FET: Operation as Capacitorless eDRAM (20 citations)
  • A review of the Z 2 -FET 1T-DRAM memory: Operation mechanisms and key parameters (14 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

His main research concerns Logic gate, Silicon on insulator, Optoelectronics, Dram and Quantum tunnelling. His Silicon on insulator study combines topics from a wide range of disciplines, such as Dram memory and Electronic engineering. In his work, Indium gallium arsenide is strongly intertwined with Dynamic random-access memory, which is a subfield of Optoelectronics.

His Quantum tunnelling study combines topics in areas such as Leakage, Quantum dot, Quantum, Transistor and Electron. His work deals with themes such as Condensed matter physics and Engineering physics, which intersect with Electron. His work in Chemical vapor deposition tackles topics such as Transient response which are related to areas like Silicon.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

On the enhanced electron mobility in strained-silicon inversion layers

M. V. Fischetti;F. Gámiz;W. Hänsch.
Journal of Applied Physics (2002)

280 Citations

Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion

F. Gamiz;M. V. Fischetti.
Journal of Applied Physics (2001)

194 Citations

Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates

F. Gámiz;P. Cartujo-Cassinello;J. B. Roldán;F. Jiménez-Molinos.
Journal of Applied Physics (2002)

191 Citations

Semiconductor-On-Insulator Materials for Nanoelectronics Applications

Alexei Nazarov;J.-P. Colinge;Francis Balestra;Jean-Pierre Raskin.
(2011)

138 Citations

Surface roughness at the Si–SiO2 interfaces in fully depleted silicon-on-insulator inversion layers

F. Gámiz;J. B. Roldán;J. A. López-Villanueva;P. Cartujo-Cassinello.
Journal of Applied Physics (1999)

132 Citations

Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures

F. Jiménez-Molinos;A. Palma;F. Gámiz;J. Banqueri.
Journal of Applied Physics (2001)

118 Citations

A comprehensive model for Coulomb scattering in inversion layers

F. Gámiz;J. A. López‐Villanueva;J. A. Jiménez‐Tejada;I. Melchor.
Journal of Applied Physics (1994)

103 Citations

Effects of the inversion-layer centroid on the performance of double-gate MOSFETs

J.A. Lopez-Villanueva;P. Cartujo-Cassinello;F. Gamiz;J. Banqueri.
IEEE Transactions on Electron Devices (2000)

102 Citations

Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's

F. Gamiz;J.A. Lopez-Villanueva;J.B. Roldan;J.E. Carceller.
IEEE Transactions on Electron Devices (1998)

101 Citations

A-RAM: Novel capacitor-less DRAM memory

Noel Rodriguez;Sorin Cristoloveanu;Francisco Gamiz.
international soi conference (2009)

100 Citations

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