World's Best Scientists 2026 revealed!
Francisco Gamiz

Francisco Gamiz

D-Index & Metrics

Engineering and Technology

D-Index
40
Citations
6507
World Ranking
7321
National Ranking
180

Francisco Gamiz publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Francisco Gamiz sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 401 publications — 89th percentile

89% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Francisco Gamiz D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Francisco Gamiz sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 40 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Francisco Gamiz is affiliated with the University of Granada in Spain and has contributed extensively to the fields of engineering and materials science. Their scholarly work spans multiple subfields, including electrical and electronic engineering, materials chemistry, biomedical engineering, atomic and molecular physics and optics, and bioengineering.

Their research focuses significantly on topics such as advancements in semiconductor devices and circuit design, semiconductor materials and devices, 2D materials and applications, advanced memory and neural computing, MXene and MAX phase materials, graphene research and applications, and nanowire synthesis and applications.

Among recent publications authored or co-authored by Francisco Gamiz are:

  • Metamaterial-Based Reconfigurable Intelligent Surface: 3D Meta-Atoms Controlled by Graphene Structures (2021) in IEEE Communications Magazine
  • Investigating the transient response of Schottky barrier back-gated MoS2 transistors (2020) in 2D Materials
  • High enhancement of sensitivity and reproducibility in label-free SARS-CoV-2 detection with graphene field-effect transistor sensors through precise surface biofunctionalization control (2024) in Biosensors and Bioelectronics
  • Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic (2020) in IEEE Access
  • DFT-based layered dielectric model of few-layer MoS2 (2022) in Solid-State Electronics

Frequent co-authors collaborating with Francisco Gamiz include Carlos Navarro, Carlos Márquez, Luca Donetti, C. Sampedro, and Jose C. Galdon. This collaborative network reflects a diverse engagement within the engineering discipline.

Francisco Gamiz's publications have appeared prominently in specialized venues such as Solid-State Electronics, Micromachines, IEEE Access, IEEE Transactions on Electron Devices, and SSRN Electronic Journal. Solid-State Electronics is the most frequent venue, with sixteen publications attributed to Gamiz.

Overall, their body of work contributes to various integral areas within semiconductor technology and materials research, addressing both theoretical models and applied device engineering across multiple advanced topics in modern electronics and material sciences.

Best Publications

  • On the enhanced electron mobility in strained-silicon inversion layers

    M. V. Fischetti;F. Gámiz;W. Hänsch

  • Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion

    F. Gamiz;M. V. Fischetti

  • Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates

    F. Gámiz;P. Cartujo-Cassinello;J. B. Roldán;F. Jiménez-Molinos

  • Semiconductor-On-Insulator Materials for Nanoelectronics Applications

    Alexei Nazarov;J.-P. Colinge;Francis Balestra;Jean-Pierre Raskin

  • Mechanical and Thermal Properties of Graphene Modified Asphalt Binders

    F. Moreno-Navarro;M. Sol-Sánchez;F. Gámiz;M.C. Rubio-Gámez

  • Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures

    F. Jiménez-Molinos;A. Palma;F. Gámiz;J. Banqueri

  • Surface roughness at the Si–SiO2 interfaces in fully depleted silicon-on-insulator inversion layers

    F. Gámiz;J. B. Roldán;J. A. López-Villanueva;P. Cartujo-Cassinello

  • Direct and trap-assisted elastic tunneling through ultrathin gate oxides

    F. Jiménez-Molinos;F. Gámiz;A. Palma;P. Cartujo

  • A comprehensive model for Coulomb scattering in inversion layers

    F. Gámiz;J. A. López‐Villanueva;J. A. Jiménez‐Tejada;I. Melchor

  • Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's

    F. Gamiz;J.A. Lopez-Villanueva;J.B. Roldan;J.E. Carceller

  • Effects of the inversion-layer centroid on the performance of double-gate MOSFETs

    J.A. Lopez-Villanueva;P. Cartujo-Cassinello;F. Gamiz;J. Banqueri

  • A-RAM: Novel capacitor-less DRAM memory

    Noel Rodriguez;Sorin Cristoloveanu;Francisco Gamiz

  • A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects

    F.J. Garcia Ruiz;A. Godoy;F. Gamiz;C. Sampedro

  • Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs, Including Quantum Effects

    J.B. Roldan;A. Godoy;F. Gamiz;M. Balaguer

  • Effects of the inversion layer centroid on MOSFET behavior

    J.A. Lopez-Villanueva;P. Cartujo-Casinello;J. Banqueri;F. Gamiz

  • Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility

    L. Donetti;F. Gámiz;J. B. Roldán;A. Godoy

  • Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers

    F. Gámiz;J. B. Roldán;P. Cartujo-Cassinello;J. A. López-Villanueva

  • Reconfigurable distributed network control system for industrial plant automation

    J. Garcia;F.R. Palomo;A. Luque;C. Aracil

  • Universality of electron mobility curves in MOSFETs: a Monte Carlo study

    F. Gamiz;J.A. Lopez-Villanueva;J. Banqueri;J.E. Carceller

  • A simple subthreshold swing model for short channel MOSFETs

    A. Godoy;J.A. López-Villanueva;J.A. Jiménez-Tejada;A. Palma

  • Silicon-On-Insulator Technology and Devices XII

    Unknown

Frequent Co-Authors

Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Asen Asenov
Asen Asenov University of Glasgow
Adrian M. Ionescu
Adrian M. Ionescu École Polytechnique Fédérale de Lausanne
O. Faynot
O. Faynot CEA LETI
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Yuan Taur
Yuan Taur University of California, San Diego
Siegfried Karg
Siegfried Karg IBM (United States)
Heike Riel
Heike Riel IBM (United States)
Benjamin Iniguez
Benjamin Iniguez Rovira i Virgili University

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