Francisco Gamiz spends much of his time researching Condensed matter physics, Electron mobility, Silicon on insulator, Silicon and MOSFET. Many of his research projects under Condensed matter physics are closely connected to Mott scattering with Mott scattering, tying the diverse disciplines of science together. His Electron mobility study incorporates themes from Phonon, Phonon scattering, Scattering, Electric field and Electron.
Silicon on insulator is a primary field of his research addressed under Optoelectronics. His research in Silicon intersects with topics in Scattering rate and Induced high electron mobility transistor. His MOSFET research integrates issues from Effective mass, Centroid and Electronic engineering.
The scientist’s investigation covers issues in Silicon on insulator, Optoelectronics, Condensed matter physics, MOSFET and Electron mobility. His Silicon on insulator research also works with subjects such as
Francisco Gamiz has included themes like Charge density, Field-effect transistor, Electric field and Effective mass, Electron in his Condensed matter physics study. As a part of the same scientific family, Francisco Gamiz mostly works in the field of MOSFET, focusing on Poisson's equation and, on occasion, Schrödinger equation. His Electron mobility study combines topics from a wide range of disciplines, such as Phonon, Phonon scattering, Scattering, Silicon and Induced high electron mobility transistor.
His primary areas of investigation include Optoelectronics, Quantum tunnelling, Transistor, Dram and Logic gate. His Optoelectronics research is multidisciplinary, relying on both Quantum and Voltage. The Transistor study combines topics in areas such as Computational physics, Work, Noise, Condensed matter physics and Electronic engineering.
His work is dedicated to discovering how Computational physics, MOSFET are connected with Scaling and other disciplines. His Charge density research extends to the thematically linked field of Condensed matter physics. His studies deal with areas such as Silicon on insulator, Random access memory and Reading as well as Logic gate.
His main research concerns Logic gate, Silicon on insulator, Optoelectronics, Dram and Quantum tunnelling. His Silicon on insulator study combines topics from a wide range of disciplines, such as Dram memory and Electronic engineering. In his work, Indium gallium arsenide is strongly intertwined with Dynamic random-access memory, which is a subfield of Optoelectronics.
His Quantum tunnelling study combines topics in areas such as Leakage, Quantum dot, Quantum, Transistor and Electron. His work deals with themes such as Condensed matter physics and Engineering physics, which intersect with Electron. His work in Chemical vapor deposition tackles topics such as Transient response which are related to areas like Silicon.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
On the enhanced electron mobility in strained-silicon inversion layers
M. V. Fischetti;F. Gámiz;W. Hänsch.
Journal of Applied Physics (2002)
Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion
F. Gamiz;M. V. Fischetti.
Journal of Applied Physics (2001)
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
F. Gámiz;P. Cartujo-Cassinello;J. B. Roldán;F. Jiménez-Molinos.
Journal of Applied Physics (2002)
Semiconductor-On-Insulator Materials for Nanoelectronics Applications
Alexei Nazarov;J.-P. Colinge;Francis Balestra;Jean-Pierre Raskin.
(2011)
Surface roughness at the Si–SiO2 interfaces in fully depleted silicon-on-insulator inversion layers
F. Gámiz;J. B. Roldán;J. A. López-Villanueva;P. Cartujo-Cassinello.
Journal of Applied Physics (1999)
Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
F. Jiménez-Molinos;A. Palma;F. Gámiz;J. Banqueri.
Journal of Applied Physics (2001)
A comprehensive model for Coulomb scattering in inversion layers
F. Gámiz;J. A. López‐Villanueva;J. A. Jiménez‐Tejada;I. Melchor.
Journal of Applied Physics (1994)
Effects of the inversion-layer centroid on the performance of double-gate MOSFETs
J.A. Lopez-Villanueva;P. Cartujo-Cassinello;F. Gamiz;J. Banqueri.
IEEE Transactions on Electron Devices (2000)
Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's
F. Gamiz;J.A. Lopez-Villanueva;J.B. Roldan;J.E. Carceller.
IEEE Transactions on Electron Devices (1998)
A-RAM: Novel capacitor-less DRAM memory
Noel Rodriguez;Sorin Cristoloveanu;Francisco Gamiz.
international soi conference (2009)
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