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Francisco Gamiz

Francisco Gamiz

D-Index & Metrics

Engineering and Technology

D-Index
40
Citations
6507
World Ranking
7319
National Ranking
180

Overview

Francisco Gamiz is affiliated with the University of Granada in Spain and has contributed extensively to the fields of engineering and materials science. Their scholarly work spans multiple subfields, including electrical and electronic engineering, materials chemistry, biomedical engineering, atomic and molecular physics and optics, and bioengineering.

Their research focuses significantly on topics such as advancements in semiconductor devices and circuit design, semiconductor materials and devices, 2D materials and applications, advanced memory and neural computing, MXene and MAX phase materials, graphene research and applications, and nanowire synthesis and applications.

Among recent publications authored or co-authored by Francisco Gamiz are:

  • Metamaterial-Based Reconfigurable Intelligent Surface: 3D Meta-Atoms Controlled by Graphene Structures (2021) in IEEE Communications Magazine
  • Investigating the transient response of Schottky barrier back-gated MoS2 transistors (2020) in 2D Materials
  • High enhancement of sensitivity and reproducibility in label-free SARS-CoV-2 detection with graphene field-effect transistor sensors through precise surface biofunctionalization control (2024) in Biosensors and Bioelectronics
  • Dual PN Source/Drain Reconfigurable FET for Fast and Low-Voltage Reprogrammable Logic (2020) in IEEE Access
  • DFT-based layered dielectric model of few-layer MoS2 (2022) in Solid-State Electronics

Frequent co-authors collaborating with Francisco Gamiz include Carlos Navarro, Carlos Márquez, Luca Donetti, C. Sampedro, and Jose C. Galdon. This collaborative network reflects a diverse engagement within the engineering discipline.

Francisco Gamiz's publications have appeared prominently in specialized venues such as Solid-State Electronics, Micromachines, IEEE Access, IEEE Transactions on Electron Devices, and SSRN Electronic Journal. Solid-State Electronics is the most frequent venue, with sixteen publications attributed to Gamiz.

Overall, their body of work contributes to various integral areas within semiconductor technology and materials research, addressing both theoretical models and applied device engineering across multiple advanced topics in modern electronics and material sciences.

Best Publications

  • On the enhanced electron mobility in strained-silicon inversion layers

    M. V. Fischetti;F. Gámiz;W. Hänsch

  • Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion

    F. Gamiz;M. V. Fischetti

  • Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates

    F. Gámiz;P. Cartujo-Cassinello;J. B. Roldán;F. Jiménez-Molinos

  • Semiconductor-On-Insulator Materials for Nanoelectronics Applications

    Alexei Nazarov;J.-P. Colinge;Francis Balestra;Jean-Pierre Raskin

  • Mechanical and Thermal Properties of Graphene Modified Asphalt Binders

    F. Moreno-Navarro;M. Sol-Sánchez;F. Gámiz;M.C. Rubio-Gámez

  • Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures

    F. Jiménez-Molinos;A. Palma;F. Gámiz;J. Banqueri

  • Surface roughness at the Si–SiO2 interfaces in fully depleted silicon-on-insulator inversion layers

    F. Gámiz;J. B. Roldán;J. A. López-Villanueva;P. Cartujo-Cassinello

  • Direct and trap-assisted elastic tunneling through ultrathin gate oxides

    F. Jiménez-Molinos;F. Gámiz;A. Palma;P. Cartujo

  • A comprehensive model for Coulomb scattering in inversion layers

    F. Gámiz;J. A. López‐Villanueva;J. A. Jiménez‐Tejada;I. Melchor

  • Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's

    F. Gamiz;J.A. Lopez-Villanueva;J.B. Roldan;J.E. Carceller

  • Effects of the inversion-layer centroid on the performance of double-gate MOSFETs

    J.A. Lopez-Villanueva;P. Cartujo-Cassinello;F. Gamiz;J. Banqueri

  • A-RAM: Novel capacitor-less DRAM memory

    Noel Rodriguez;Sorin Cristoloveanu;Francisco Gamiz

  • A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects

    F.J. Garcia Ruiz;A. Godoy;F. Gamiz;C. Sampedro

  • Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs, Including Quantum Effects

    J.B. Roldan;A. Godoy;F. Gamiz;M. Balaguer

  • Effects of the inversion layer centroid on MOSFET behavior

    J.A. Lopez-Villanueva;P. Cartujo-Casinello;J. Banqueri;F. Gamiz

  • Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility

    L. Donetti;F. Gámiz;J. B. Roldán;A. Godoy

  • Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers

    F. Gámiz;J. B. Roldán;P. Cartujo-Cassinello;J. A. López-Villanueva

  • Reconfigurable distributed network control system for industrial plant automation

    J. Garcia;F.R. Palomo;A. Luque;C. Aracil

  • Universality of electron mobility curves in MOSFETs: a Monte Carlo study

    F. Gamiz;J.A. Lopez-Villanueva;J. Banqueri;J.E. Carceller

  • A simple subthreshold swing model for short channel MOSFETs

    A. Godoy;J.A. López-Villanueva;J.A. Jiménez-Tejada;A. Palma

  • Silicon-On-Insulator Technology and Devices XII

    Unknown

Frequent Co-Authors

Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Asen Asenov
Asen Asenov University of Glasgow
Adrian M. Ionescu
Adrian M. Ionescu École Polytechnique Fédérale de Lausanne
O. Faynot
O. Faynot CEA LETI
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Yuan Taur
Yuan Taur University of California, San Diego
Siegfried Karg
Siegfried Karg IBM (United States)
Heike Riel
Heike Riel IBM (United States)
Benjamin Iniguez
Benjamin Iniguez Rovira i Virgili University

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