Jerry G. Fossum

What is he best known for?

The fields of study he is best known for:

• Quantum mechanics
• MOSFET
• Transistor

MOSFET, Electrical engineering, Silicon on insulator, Optoelectronics and CMOS are his primary areas of study. His MOSFET study combines topics from a wide range of disciplines, such as Threshold voltage, Electronic engineering and Electron mobility, Condensed matter physics. His work deals with themes such as Electronic circuit and Nanoelectronics, which intersect with Electronic engineering.

His study in Silicon on insulator is interdisciplinary in nature, drawing from both Field-effect transistor, Equivalent circuit, Bipolar junction transistor and Work function. His Optoelectronics research is multidisciplinary, incorporating perspectives in Polysilicon depletion effect and Leakage. His work in the fields of CMOS, such as Semiconductor device modeling, intersects with other areas such as Process.

His most cited work include:

• Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's (566 citations)
• Anomalous leakage current in LPCVD PolySilicon MOSFET's (265 citations)
• Nanoscale FinFETs with gate-source/drain underlap (231 citations)

What are the main themes of his work throughout his whole career to date?

Jerry G. Fossum focuses on MOSFET, Electrical engineering, Silicon on insulator, Optoelectronics and CMOS. The study incorporates disciplines such as Threshold voltage, Subthreshold conduction, Electronic circuit and Electronic engineering in addition to MOSFET. His study in the field of Field-effect transistor, Voltage and Depletion region is also linked to topics like Communication channel.

His Silicon on insulator research incorporates themes from Integrated circuit design, Very-large-scale integration, Circuit design and Low voltage. His Optoelectronics research integrates issues from Passivation and Ultra thin body. His work in CMOS addresses issues such as Logic gate, which are connected to fields such as Low-power electronics.

He most often published in these fields:

• MOSFET (57.39%)
• Electrical engineering (48.30%)
• Silicon on insulator (42.05%)

What were the highlights of his more recent work (between 2008-2017)?

• Optoelectronics (39.77%)
• Electrical engineering (48.30%)
• Silicon on insulator (42.05%)

In recent papers he was focusing on the following fields of study:

Jerry G. Fossum mainly investigates Optoelectronics, Electrical engineering, Silicon on insulator, MOSFET and CMOS. His study looks at the relationship between Optoelectronics and fields such as Ultra thin body, as well as how they intersect with chemical problems. His study in Field-effect transistor and Power switching falls under the purview of Electrical engineering.

His Silicon on insulator study incorporates themes from Dram, Electronic engineering and Nanotechnology. His research in MOSFET tackles topics such as Threshold voltage which are related to areas like Bipolar junction transistor. Jerry G. Fossum works mostly in the field of CMOS, limiting it down to topics relating to Logic gate and, in certain cases, Low-power electronics.

Between 2008 and 2017, his most popular works were:

• Physical Insights on BJT-Based 1T DRAM Cells (60 citations)
• A novel low cost 25μm thin exfoliated monocrystalline Si solar cell technology (44 citations)
• A Simplified Superior Floating-Body/Gate DRAM Cell (28 citations)

In his most recent research, the most cited papers focused on:

• Quantum mechanics
• Transistor
• Semiconductor

His primary areas of investigation include Electrical engineering, MOSFET, Silicon on insulator, Dram and CMOS. Logic gate is the focus of his Electrical engineering research. MOSFET is closely attributed to Silicon in his study.

Jerry G. Fossum combines subjects such as Nanoscopic scale, Nanotechnology, Nanoscale cmos, Engineering physics and Soi finfet with his study of Silicon on insulator. His research integrates issues of AND gate, Diode, Electronic engineering and Integrated circuit in his study of Dram. Jerry G. Fossum focuses mostly in the field of CMOS, narrowing it down to topics relating to Transistor and, in certain cases, Optoelectronics.