World's Best Scientists 2026 revealed!
Bich-Yen Nguyen

Bich-Yen Nguyen

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
8658
World Ranking
2562
National Ranking
36

Materials Science

D-Index
52
Citations
8821
World Ranking
9638
National Ranking
271

Research.com Recognitions

  • 2020 - IEEE Fellow For contributions to silicon on insulator technology

Overview

Bich-Yen Nguyen is affiliated with Soitec in France and has a primary research focus in the field of Engineering, with a specialization in Electrical and Electronic Engineering. Their scholarly work spans various subfields such as Biomedical Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, as well as Electronic, Optical, and Magnetic Materials.

The scientist's research concentrates on semiconductor materials and devices, with significant contributions in Advancements in Semiconductor Devices and Circuit Design. Additional research interests include Integrated Circuits and Semiconductor Failure Analysis, Ferroelectric and Negative Capacitance Devices, Thin-Film Transistor Technologies, Nanowire Synthesis and Applications, and ZnO doping and properties.

Nguyen's recent published papers include:

  • New Insights into the Impact of Hydrogen Evolution on the Reliability of IGZO FETs: Experiment and Modeling, 2022, 2022 International Electron Devices Meeting (IEDM)
  • Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Field-Effect Transistors, 2023, IEEE Transactions on Electron Devices
  • Hydrogen-Related Instability of IGZO Field-Effect Transistors, 2024, IEEE Transactions on Electron Devices
  • Double Buried Oxide Trap-Rich Substrates for High Frequency Applications, 2023, IEEE Electron Device Letters
  • First Demonstration of BEOL-Compatible 3D Fin-Gate Oxide Semiconductor Fe-FETs, 2022, 2022 International Electron Devices Meeting (IEDM)

Frequent publication venues for Nguyen's work include:

  • IEEE Transactions on Electron Devices
  • IEEE Journal of the Electron Devices Society
  • 2022 International Electron Devices Meeting (IEDM)
  • Solid-State Electronics
  • ECS Meeting Abstracts

Throughout their career, Nguyen has collaborated regularly with several coauthors including Chen Sun, W. Schwarzenbach, Qiwen Kong, Zuopu Zhou, and Xiaolin Wang.

In 2020, Nguyen was recognized as an IEEE Fellow for contributions to silicon on insulator technology.

Best Publications

  • Method for forming a double-gated semiconductor device

    Daniel T. Pham;Alexander L. Barr;Leo Mathew;Bich-Yen Nguyen

  • Inverse slope isolation and dual surface orientation integration

    Mariam G. Sadaka;Debby Eades;Joe Mogab;Bich-Yen Nguyen

  • Dual metal gate transistors for CMOS process

    Sucharita Madhukar;Bich-Yen Nguyen

  • High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

    O. Weber;O. Faynot;F. Andrieu;C. Buj-Dufournet

  • Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates

    G. Jin;J. L. Liu;S. G. Thomas;Y. H. Luo

  • Method for forming contact to a semiconductor device

    Kent J. Cooper;Jung-Hui Lin;Scott S. Roth;Bernard J. Roman

  • Crystallization in hafnia- and zirconia-based systems

    S. V. Ushakov;A. Navrotsky;Y. Yang;S. Stemmer

  • Interconnection structure for conductive layers

    Michael P. Woo;James D. Hayden;Richard D. Sivan;Howard C. Kirsch

  • Method for making a semiconductor device with strain enhancement

    Da Zhang;Bich-Yen Nguyen;Voon-Yew Thean;Yasuhito Shiho

  • Structure and dielectric properties of amorphous LaAlO3 and LaAlOxNy films as alternative gate dielectric materials

    Xu-bing Lu;Zhi-guo Liu;Yi-ping Wang;Ying Yang

  • Memory device that includes passivated nanoclusters and method for manufacture

    Ramachandran Muralidhar;Chitra K. Subramanian;Sucharita Madhukar;Bruce E. White

  • Method of forming a vertical double gate semiconductor device and structure thereof

    Leo Mathew;Bich-Yen Nguyen;Michael Sadd;Bruce E. White

  • High K dielectric film

    Vidya S. Kaushik;Bich-Yen Nguyen;Srinivas V. Pietambaram;James Kenyon Schaeffer

  • Process for forming a high-K gate dielectric

    Vidya S. Kaushik;Bich-Yen Nguyen;Olubunmi O. Adetutu;Christopher C. Hobbs

  • Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

    J. K. Schaeffer;S. B. Samavedam;D. C. Gilmer;V. Dhandapani

  • Method for forming an integrated circuit pattern on a semiconductor substrate using silicon-rich silicon nitride

    Bernard John Roman;Bich-Yen Nguyen;Chandrasekaram Ramiah

  • Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below

    C. Fenouillet-Beranger;P. Perreau;S. Denorme;L. Tosti

  • CMOS Vertical Multiple Independent Gate Field Effect Transistor (MIGFET)

    L. Mathew;Y. Du;A.V.-Y. Thean;M. Sadd

  • Semiconductor device structure

    Ted R. White;Alexander L. Barr;Bich-Yen Nguyen;Marius K. Orlowski

  • A process/physics-based compact model for nonclassical CMOS device and circuit design

    J. G. Fossum;L. Ge;Meng-Hsueh Chiang;V. P. Trivedi

Frequent Co-Authors

Aaron Thean
Aaron Thean National University of Singapore
O. Faynot
O. Faynot CEA LETI
Philip J. Tobin
Philip J. Tobin NXP (Netherlands)
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Alexander A. Demkov
Alexander A. Demkov The University of Texas at Austin
Xiao Gong
Xiao Gong National University of Singapore
Thomas Skotnicki
Thomas Skotnicki Warsaw University of Technology

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