World's Best Scientists 2026 revealed!
Bich-Yen Nguyen

Bich-Yen Nguyen

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
8658
World Ranking
2562
National Ranking
36

Materials Science

D-Index
52
Citations
8821
World Ranking
9636
National Ranking
271

Bich-Yen Nguyen publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Bich-Yen Nguyen sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 301 publications — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Bich-Yen Nguyen D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Bich-Yen Nguyen sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 52 D-Index — 64th percentile

64% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2020 - IEEE Fellow For contributions to silicon on insulator technology

Overview

Bich-Yen Nguyen is affiliated with Soitec in France and has a primary research focus in the field of Engineering, with a specialization in Electrical and Electronic Engineering. Their scholarly work spans various subfields such as Biomedical Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, as well as Electronic, Optical, and Magnetic Materials.

The scientist's research concentrates on semiconductor materials and devices, with significant contributions in Advancements in Semiconductor Devices and Circuit Design. Additional research interests include Integrated Circuits and Semiconductor Failure Analysis, Ferroelectric and Negative Capacitance Devices, Thin-Film Transistor Technologies, Nanowire Synthesis and Applications, and ZnO doping and properties.

Nguyen's recent published papers include:

  • New Insights into the Impact of Hydrogen Evolution on the Reliability of IGZO FETs: Experiment and Modeling, 2022, 2022 International Electron Devices Meeting (IEDM)
  • Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Field-Effect Transistors, 2023, IEEE Transactions on Electron Devices
  • Hydrogen-Related Instability of IGZO Field-Effect Transistors, 2024, IEEE Transactions on Electron Devices
  • Double Buried Oxide Trap-Rich Substrates for High Frequency Applications, 2023, IEEE Electron Device Letters
  • First Demonstration of BEOL-Compatible 3D Fin-Gate Oxide Semiconductor Fe-FETs, 2022, 2022 International Electron Devices Meeting (IEDM)

Frequent publication venues for Nguyen's work include:

  • IEEE Transactions on Electron Devices
  • IEEE Journal of the Electron Devices Society
  • 2022 International Electron Devices Meeting (IEDM)
  • Solid-State Electronics
  • ECS Meeting Abstracts

Throughout their career, Nguyen has collaborated regularly with several coauthors including Chen Sun, W. Schwarzenbach, Qiwen Kong, Zuopu Zhou, and Xiaolin Wang.

In 2020, Nguyen was recognized as an IEEE Fellow for contributions to silicon on insulator technology.

Best Publications

  • Method for forming a double-gated semiconductor device

    Daniel T. Pham;Alexander L. Barr;Leo Mathew;Bich-Yen Nguyen

  • Inverse slope isolation and dual surface orientation integration

    Mariam G. Sadaka;Debby Eades;Joe Mogab;Bich-Yen Nguyen

  • Dual metal gate transistors for CMOS process

    Sucharita Madhukar;Bich-Yen Nguyen

  • High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

    O. Weber;O. Faynot;F. Andrieu;C. Buj-Dufournet

  • Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates

    G. Jin;J. L. Liu;S. G. Thomas;Y. H. Luo

  • Method for forming contact to a semiconductor device

    Kent J. Cooper;Jung-Hui Lin;Scott S. Roth;Bernard J. Roman

  • Crystallization in hafnia- and zirconia-based systems

    S. V. Ushakov;A. Navrotsky;Y. Yang;S. Stemmer

  • Interconnection structure for conductive layers

    Michael P. Woo;James D. Hayden;Richard D. Sivan;Howard C. Kirsch

  • Method for making a semiconductor device with strain enhancement

    Da Zhang;Bich-Yen Nguyen;Voon-Yew Thean;Yasuhito Shiho

  • Structure and dielectric properties of amorphous LaAlO3 and LaAlOxNy films as alternative gate dielectric materials

    Xu-bing Lu;Zhi-guo Liu;Yi-ping Wang;Ying Yang

  • Memory device that includes passivated nanoclusters and method for manufacture

    Ramachandran Muralidhar;Chitra K. Subramanian;Sucharita Madhukar;Bruce E. White

  • Method of forming a vertical double gate semiconductor device and structure thereof

    Leo Mathew;Bich-Yen Nguyen;Michael Sadd;Bruce E. White

  • High K dielectric film

    Vidya S. Kaushik;Bich-Yen Nguyen;Srinivas V. Pietambaram;James Kenyon Schaeffer

  • Process for forming a high-K gate dielectric

    Vidya S. Kaushik;Bich-Yen Nguyen;Olubunmi O. Adetutu;Christopher C. Hobbs

  • Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

    J. K. Schaeffer;S. B. Samavedam;D. C. Gilmer;V. Dhandapani

  • Method for forming an integrated circuit pattern on a semiconductor substrate using silicon-rich silicon nitride

    Bernard John Roman;Bich-Yen Nguyen;Chandrasekaram Ramiah

  • Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below

    C. Fenouillet-Beranger;P. Perreau;S. Denorme;L. Tosti

  • CMOS Vertical Multiple Independent Gate Field Effect Transistor (MIGFET)

    L. Mathew;Y. Du;A.V.-Y. Thean;M. Sadd

  • Semiconductor device structure

    Ted R. White;Alexander L. Barr;Bich-Yen Nguyen;Marius K. Orlowski

  • A process/physics-based compact model for nonclassical CMOS device and circuit design

    J. G. Fossum;L. Ge;Meng-Hsueh Chiang;V. P. Trivedi

Frequent Co-Authors

Aaron Thean
Aaron Thean National University of Singapore
O. Faynot
O. Faynot CEA LETI
Philip J. Tobin
Philip J. Tobin NXP (Netherlands)
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Alexander A. Demkov
Alexander A. Demkov The University of Texas at Austin
Xiao Gong
Xiao Gong National University of Singapore
Thomas Skotnicki
Thomas Skotnicki Warsaw University of Technology

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