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C. Fenouillet-Beranger

C. Fenouillet-Beranger

CEA LETI
France

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 34 5767 5536 117 114 212 5308

C. Fenouillet-Beranger publications per year

The chart shows the history of publications by C. Fenouillet-Beranger between 2000 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. C. Fenouillet-Beranger published across 26 years, from 2000 to 2025, averaging 8.6 papers a year. Output peaked at 23 publications in 2016. 10 of the 223 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 2000 to 2025. Vertical axis: number of publications, 0 to 23. Peak 23 publications in 2016. 2000: 2 publications 2001: 2 publications 2002: 1 publication 2003: 2 publications 2004: 5 publications 2005: 7 publications 2006: 9 publications 2007: 7 publications 2008: 8 publications 2009: 16 publications 2010: 17 publications 2011: 14 publications 2012: 11 publications 2013: 11 publications 2014: 10 publications 2015: 12 publications 2016: 23 publications 2017: 18 publications 2018: 15 publications 2019: 10 publications 2020: 7 publications 2021: 4 publications 2022: 1 publication 2023: 1 publication 2024: 2 publications 2025: 8 publications
2000 2025

223 publications in total across all disciplines

View publications per year as a table
C. Fenouillet-Beranger: publications per year, 2000 to 2025
Year Publications
2000 2
2001 2
2002 1
2003 2
2004 5
2005 7
2006 9
2007 7
2008 8
2009 16
2010 17
2011 14
2012 11
2013 11
2014 10
2015 12
2016 23
2017 18
2018 15
2019 10
2020 7
2021 4
2022 1
2023 1
2024 2
2025 8
Total 223
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C. Fenouillet-Beranger publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where C. Fenouillet-Beranger sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 194–213 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 212 publications — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430 212
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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C. Fenouillet-Beranger D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where C. Fenouillet-Beranger sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 34 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 34 D-Index — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244 34
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

C. Fenouillet-Beranger is affiliated with CEA LETI in France. Their research primarily focuses on the field of Engineering, with a specialization in Electrical and Electronic Engineering and Biomedical Engineering. The scientist's work covers a diverse range of topics related to semiconductor technology, circuit design, and advanced materials.

The main topics addressed in their research include:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor Materials and Devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Nanowire Synthesis and Applications
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Analog and Mixed-Signal Circuit Design

The scientist's publication record includes papers in prominent venues such as Solid-State Electronics, IEEE Transactions on Electron Devices, the 2021 IEEE International Electron Devices Meeting (IEDM), SSRN Electronic Journal, and Nature Reviews Electrical Engineering. Some of the key publications are:

  • A Review of Low Temperature Process Modules Leading Up to the First (≤500 °C) Planar FDSOI CMOS Devices for 3-D Sequential Integration (2021) in IEEE Transactions on Electron Devices
  • 3D sequential integration: applications and associated key enabling modules (design & technology) (2021) in 2021 IEEE International Electron Devices Meeting (IEDM)
  • Europe's pilot line on fully depleted silicon-on-insulator technology (FAMES) (2025) in Nature Reviews Electrical Engineering
  • Toward full relaxation of sSOI substrates for PFET device fabrication (2025) in Solid-State Electronics
  • Pursuing the FD-SOI roadmap down to 10 nm and 7 nm nodes for high energy efficient, low power and RF/mmWave applications (2025) in Solid-State Electronics

The researcher frequently collaborates with other scientists known in the field, including Laurent Brunet, Joël Kanyandekwe, B. Duriez, V. Lapras, and T. Mota Frutuoso. Collaborations often focus on semiconductor technology and related engineering challenges.

Publication venues where C. Fenouillet-Beranger has most frequently contributed are:

  • Solid-State Electronics (3 publications)
  • SSRN Electronic Journal (2 publications)
  • IEEE Transactions on Electron Devices (1 publication)
  • 2021 IEEE International Electron Devices Meeting (IEDM) (1 publication)
  • Nature Reviews Electrical Engineering (1 publication)

Best Publications

  • 28nm FDSOI technology platform for high-speed low-voltage digital applications

    N. Planes;O. Weber;V. Barral;S. Haendler

  • Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

    R. Tauk;F. Teppe;S. Boubanga;D. Coquillat

  • Multi- $V_{T}$ UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

    J-P Noel;O. Thomas;M. Jaud;O. Weber

  • Planar Fully depleted SOI technology: A powerful architecture for the 20nm node and beyond

    O. Faynot;F. Andrieu;O. Weber;C. Fenouillet-Beranger

  • High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

    O. Weber;O. Faynot;F. Andrieu;C. Buj-Dufournet

  • Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia

    Unknown

  • FDSOI devices with thin BOX and ground plane integration for 32 nm node and below

    C. Fenouillet-Beranger;S. Denorme;P. Perreau;C. Buj

  • 3DVLSI with CoolCube process: An alternative path to scaling

    P. Batude;C. Fenouillet-Beranger;L. Pasini;V. Lu

  • Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below

    C. Fenouillet-Beranger;P. Perreau;S. Denorme;L. Tosti

  • Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

    F. Andrieu;O. Weber;J. Mazurier;O. Thomas

  • Requirements for ultra-thin-film devices and new materials for the CMOS roadmap

    C. Fenouillet-Beranger;T. Skotnicki;S. Monfray;N. Carriere

  • First demonstration of a CMOS over CMOS 3D VLSI CoolCube™ integration on 300mm wafers

    L. Brunet;P. Batude;C. Fenouillet-Beranger;P. Besombes

  • Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO 2 gate stack

    V. Barral;T. Poiroux;F. Andrieu;C. Buj-Dufournet

  • Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below

    C. Fenouillet-Beranger;P. Perreau;S. Denorme;L. Tosti

  • 3D Sequential Integration: Application-driven technological achievements and guidelines

    P. Batude;L. Brunet;C. Fenouillet-Beranger;F. Andrieu

  • Efficient multi-V T FDSOI technology with UTBOX for low power circuit design

    C. Fenouillet-Beranger;O. Thomas;P. Perreau;J-P. Noel

  • Fully-depleted SOI technology using high-k and single-metal gate for 32 nm node LSTP applications featuring 0.179 μm2 6T-SRAM bitcell

    Unknown

  • On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells

    J. Mazurier;O. Weber;F. Andrieu;A. Toffoli

  • Gate-induced floating-body effect in fully-depleted SOI MOSFETs with tunneling oxide and back-gate biasing

    M. Cassé;J. Pretet;J. Pretet;S. Cristoloveanu;T. Poiroux

  • A capacitor-less DRAM cell on 75nm gate length, 16nm thin fully depleted SOI device for high density embedded memories

    Unknown

  • Hybrid FDSOI/bulk High-k/metal gate platform for low power (LP) multimedia technology

    C. Fenouillet-Beranger;P. Perreau;L. Pham-Nguyen;S. Denorme

  • Monolithic 3D integration: A powerful alternative to classical 2D scaling

    M. Vinet;P. Batude;C. Fenouillet-Beranger;F. Clermidy

  • Work-function engineering in gate first technology for multi-V T dual-gate FDSOI CMOS on UTBOX

    O. Weber;F. Andrieu;J. Mazurier;M. Casse

Frequent Co-Authors

Francois Andrieu
Francois Andrieu CEA LETI
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
O. Faynot
O. Faynot CEA LETI
Thomas Skotnicki
Thomas Skotnicki Warsaw University of Technology
Bich-Yen Nguyen
Bich-Yen Nguyen Soitec (France)
J. M. Hartmann
J. M. Hartmann CEA LETI
E. Vianello
E. Vianello French Alternative Energies and Atomic Energy Commission (CEA)
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
S. Barraud
S. Barraud Atomic Energy and Alternative Energies Commission
Pascal Vivet
Pascal Vivet Atomic Energy and Alternative Energies Commission

External Links

Personal website of C. Fenouillet-Beranger

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Best Scientists Citing C. Fenouillet-Beranger

Francois Andrieu

Francois Andrieu

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Publications: 34

O. Faynot

O. Faynot

CEA LETI

Publications: 17

Gerard Ghibaudo

Gerard Ghibaudo

Grenoble Alpes University

Publications: 13

Sorin Cristoloveanu

Sorin Cristoloveanu

Grenoble Institute of Technology

Publications: 13

Sung Kyu Lim

Sung Kyu Lim

Georgia Institute of Technology

Publications: 10

Maud Vinet

Maud Vinet

Grenoble Alpes University

Publications: 10

Krishnendu Chakrabarty

Krishnendu Chakrabarty

Arizona State University

Publications: 9

Jean-Pierre Raskin

Jean-Pierre Raskin

Université Catholique de Louvain

Publications: 9

Bich-Yen Nguyen

Bich-Yen Nguyen

Soitec (France)

Publications: 8

Denis Flandre

Denis Flandre

Université Catholique de Louvain

Publications: 7

Chenming Hu

Chenming Hu

University of California, Berkeley

Publications: 6

Yogesh Singh Chauhan

Yogesh Singh Chauhan

Indian Institute of Technology Kanpur

Publications: 6

Sourabh Khandelwal

Sourabh Khandelwal

Macquarie University

Publications: 5

Daniele Caimi

Daniele Caimi

IBM (United States)

Publications: 5

Daniel M. Fleetwood

Daniel M. Fleetwood

Vanderbilt University

Publications: 4

Ali Khakifirooz

Ali Khakifirooz

Intel (United States)

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