World's Best Scientists 2026 revealed!
C. Fenouillet-Beranger

C. Fenouillet-Beranger

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
5308
World Ranking
5767
National Ranking
117

C. Fenouillet-Beranger publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where C. Fenouillet-Beranger sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 212 publications — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

C. Fenouillet-Beranger D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where C. Fenouillet-Beranger sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 34 D-Index — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

C. Fenouillet-Beranger is affiliated with CEA LETI in France. Their research primarily focuses on the field of Engineering, with a specialization in Electrical and Electronic Engineering and Biomedical Engineering. The scientist's work covers a diverse range of topics related to semiconductor technology, circuit design, and advanced materials.

The main topics addressed in their research include:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor Materials and Devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Nanowire Synthesis and Applications
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Analog and Mixed-Signal Circuit Design

The scientist's publication record includes papers in prominent venues such as Solid-State Electronics, IEEE Transactions on Electron Devices, the 2021 IEEE International Electron Devices Meeting (IEDM), SSRN Electronic Journal, and Nature Reviews Electrical Engineering. Some of the key publications are:

  • A Review of Low Temperature Process Modules Leading Up to the First (≤500 °C) Planar FDSOI CMOS Devices for 3-D Sequential Integration (2021) in IEEE Transactions on Electron Devices
  • 3D sequential integration: applications and associated key enabling modules (design & technology) (2021) in 2021 IEEE International Electron Devices Meeting (IEDM)
  • Europe's pilot line on fully depleted silicon-on-insulator technology (FAMES) (2025) in Nature Reviews Electrical Engineering
  • Toward full relaxation of sSOI substrates for PFET device fabrication (2025) in Solid-State Electronics
  • Pursuing the FD-SOI roadmap down to 10 nm and 7 nm nodes for high energy efficient, low power and RF/mmWave applications (2025) in Solid-State Electronics

The researcher frequently collaborates with other scientists known in the field, including Laurent Brunet, Joël Kanyandekwe, B. Duriez, V. Lapras, and T. Mota Frutuoso. Collaborations often focus on semiconductor technology and related engineering challenges.

Publication venues where C. Fenouillet-Beranger has most frequently contributed are:

  • Solid-State Electronics (3 publications)
  • SSRN Electronic Journal (2 publications)
  • IEEE Transactions on Electron Devices (1 publication)
  • 2021 IEEE International Electron Devices Meeting (IEDM) (1 publication)
  • Nature Reviews Electrical Engineering (1 publication)

Best Publications

  • 28nm FDSOI technology platform for high-speed low-voltage digital applications

    N. Planes;O. Weber;V. Barral;S. Haendler

  • Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

    R. Tauk;F. Teppe;S. Boubanga;D. Coquillat

  • Multi- $V_{T}$ UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

    J-P Noel;O. Thomas;M. Jaud;O. Weber

  • Planar Fully depleted SOI technology: A powerful architecture for the 20nm node and beyond

    O. Faynot;F. Andrieu;O. Weber;C. Fenouillet-Beranger

  • High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

    O. Weber;O. Faynot;F. Andrieu;C. Buj-Dufournet

  • Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia

    Unknown

  • FDSOI devices with thin BOX and ground plane integration for 32 nm node and below

    C. Fenouillet-Beranger;S. Denorme;P. Perreau;C. Buj

  • 3DVLSI with CoolCube process: An alternative path to scaling

    P. Batude;C. Fenouillet-Beranger;L. Pasini;V. Lu

  • Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below

    C. Fenouillet-Beranger;P. Perreau;S. Denorme;L. Tosti

  • Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

    F. Andrieu;O. Weber;J. Mazurier;O. Thomas

  • Requirements for ultra-thin-film devices and new materials for the CMOS roadmap

    C. Fenouillet-Beranger;T. Skotnicki;S. Monfray;N. Carriere

  • First demonstration of a CMOS over CMOS 3D VLSI CoolCube™ integration on 300mm wafers

    L. Brunet;P. Batude;C. Fenouillet-Beranger;P. Besombes

  • Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO 2 gate stack

    V. Barral;T. Poiroux;F. Andrieu;C. Buj-Dufournet

  • Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below

    C. Fenouillet-Beranger;P. Perreau;S. Denorme;L. Tosti

  • 3D Sequential Integration: Application-driven technological achievements and guidelines

    P. Batude;L. Brunet;C. Fenouillet-Beranger;F. Andrieu

  • Efficient multi-V T FDSOI technology with UTBOX for low power circuit design

    C. Fenouillet-Beranger;O. Thomas;P. Perreau;J-P. Noel

  • Fully-depleted SOI technology using high-k and single-metal gate for 32 nm node LSTP applications featuring 0.179 μm2 6T-SRAM bitcell

    Unknown

  • On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells

    J. Mazurier;O. Weber;F. Andrieu;A. Toffoli

  • Gate-induced floating-body effect in fully-depleted SOI MOSFETs with tunneling oxide and back-gate biasing

    M. Cassé;J. Pretet;J. Pretet;S. Cristoloveanu;T. Poiroux

  • A capacitor-less DRAM cell on 75nm gate length, 16nm thin fully depleted SOI device for high density embedded memories

    Unknown

  • Hybrid FDSOI/bulk High-k/metal gate platform for low power (LP) multimedia technology

    C. Fenouillet-Beranger;P. Perreau;L. Pham-Nguyen;S. Denorme

  • Monolithic 3D integration: A powerful alternative to classical 2D scaling

    M. Vinet;P. Batude;C. Fenouillet-Beranger;F. Clermidy

  • Work-function engineering in gate first technology for multi-V T dual-gate FDSOI CMOS on UTBOX

    O. Weber;F. Andrieu;J. Mazurier;M. Casse

Frequent Co-Authors

Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
O. Faynot
O. Faynot CEA LETI
Thomas Skotnicki
Thomas Skotnicki Warsaw University of Technology
Bich-Yen Nguyen
Bich-Yen Nguyen Soitec (France)
E. Vianello
E. Vianello French Alternative Energies and Atomic Energy Commission (CEA)
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
S. Barraud
S. Barraud Atomic Energy and Alternative Energies Commission
Pascal Vivet
Pascal Vivet Atomic Energy and Alternative Energies Commission

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