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Toshiro Hiramoto

Toshiro Hiramoto

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
45
Citations
8425
World Ranking
3540
National Ranking
129

Overview

Toshiro Hiramoto is affiliated with the University of Tokyo in Japan, with a primary focus on engineering, particularly in electrical and electronic engineering. Their research portfolio encompasses a broad range of topics within semiconductor materials and devices, with significant emphasis on advancements in semiconductor devices and circuit design, ferroelectric and negative capacitance devices, advanced memory and neural computing, nanowire synthesis and applications, silicon carbide semiconductor technologies, and MXene and MAX phase materials.

Their frequent publication venues highlight engagement with highly specialized journals and conferences, including:

  • Japanese Journal of Applied Physics
  • IEEE Transactions on Electron Devices
  • IEEE Journal of the Electron Devices Society
  • IEEE Silicon Nanoelectronics Workshop
  • Applied Physics Letters

Toshiro Hiramoto has been a contributor to various research papers over the years. Notable recent publications include:

  • Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application, 2020, IEEE Journal of the Electron Devices Society
  • A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide, 2022, IEEE Electron Device Letters
  • Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics, 2022, Nano Convergence
  • Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application, 2021, IEEE Transactions on Electron Devices
  • Reliability characteristics of metal/ferroelectric-HfO2/IGZO/metal capacitor for non-volatile memory application, 2020, Applied Physics Express

The scientist often collaborates with several co-authors across different studies. Frequent co-authors include:

  • Takuya Saraya
  • Masaharu Kobayashi
  • Kiyoshi Takeuchi
  • T. Mizutani
  • Fei Mo

Their work centers on engineering approaches that integrate various semiconductor and ferroelectric materials to develop devices for memory applications and advanced electronics. The range of publication venues and topics illustrates a focus on both the fundamental materials chemistry and applied device physics underlying modern semiconductor technology.

Best Publications

  • Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals

    Yi Shi;Yi Shi;Kenichi Saito;Hiroki Ishikuro;Toshiro Hiramoto

  • Quantum mechanical effects in the silicon quantum dot in a single-electron transistor

    Hiroki Ishikuro;Toshiro Hiramoto

  • Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies

    K. Takeuchi;T. Fukai;T. Tsunomura;A.T. Putra

  • Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate

    H. Ishikuro;T. Fujii;T. Saraya;G. Hashiguchi

  • Impact of drain induced barrier lowering on read scheme in silicon nanocrystal memory with two-bit-per-cell operation

    Sangsu Park;Sangsu Park;Hyunsik Im;Ilgweon Kim;Toshiro Hiramoto

  • Boosted gate MOS (BGMOS): device/circuit cooperation scheme to achieve leakage-free giga-scale integration

    T. Inukai;M. Takamiya;K. Nose;H. Kawaguchi

  • On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    Masaharu Kobayashi;Toshiro Hiramoto

  • Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application

    Fei Mo;Yusaku Tagawa;Chengji Jin;MinJu Ahn

  • Negative Capacitance for Boosting Tunnel FET performance

    Masaharu Kobayashi;Kyungmin Jang;Nozomu Ueyama;Toshiro Hiramoto

  • Experimental evidence for quantum mechanical narrow channel effect in ultra-narrow MOSFET's

    H. Majima;H. Ishikuro;H. Ishikuro;T. Hiramoto

  • Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation

    Toshiro Hiramoto;Kazuhiko Hirakawa;Yasuhiro Iye;Toshiaki Ikoma

  • Ferroelectric HfO 2 Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process

    Masaharu Kobayashi;Yusaku Tagawa;Fei Mo;Takuya Saraya

  • Impact of Parameter Variations and Random Dopant Fluctuations on Short-Channel Fully Depleted SOI MOSFETs With Extremely Thin BOX

    T. Ohtou;N. Sugii;T. Hiramoto

  • Experimental study on polarization-limited operation speed of negative capacitance FET with ferroelectric HfO 2

    Masaharu Kobayashi;Nozomu Ueyama;Kyungmin Jang;Toshiro Hiramoto

  • Control of Coulomb blockade oscillations in silicon single electron transistors using silicon nanocrystal floating gates

    Nobuyoshi Takahashi;Hiroki Ishikuro;Toshiro Hiramoto

  • Experimental study on quantum confinement effects in silicon nanowire metal-oxide-semiconductor field-effect transistors and single-electron transistors

    Masaharu Kobayashi;Toshiro Hiramoto

  • On the origin of tunneling barriers in silicon single electron and single hole transistors

    Hiroki Ishikuro;Toshiro Hiramoto

  • Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias

    Toshiro Hiramoto;Makoto Takamiya

  • Direct Measurement of Correlation Between SRAM Noise Margin and Individual Cell Transistor Variability by Using Device Matrix Array

    T. Hiramoto;M. Suzuki;X. Song;K. Shimizu

  • Extension of Coulomb blockade region by quantum confinement in the ultrasmall silicon dot in a single-hole transistor at room temperature

    Masumi Saitoh;Toshiro Hiramoto

  • VTCMOS characteristics and its optimum conditions predicted by a compact analytical model

    Hyunsik Im;T. Inukai;H. Gomyo;T. Hiramoto

Frequent Co-Authors

Hiroshi Toshiyoshi
Hiroshi Toshiyoshi University of Tokyo
Makoto Takamiya
Makoto Takamiya University of Tokyo
Takayasu Sakurai
Takayasu Sakurai University of Tokyo
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Hiroyuki Fujita
Hiroyuki Fujita Tokyo City University
Shinichiro Kimura
Shinichiro Kimura Hitachi (Japan)
Adrian M. Ionescu
Adrian M. Ionescu École Polytechnique Fédérale de Lausanne
Yi Shi
Yi Shi Nanjing University
Masakazu Aono
Masakazu Aono National Institute for Materials Science
Tohru Tsuruoka
Tohru Tsuruoka National Institute for Materials Science

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