D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 41 Citations 6,625 514 World Ranking 2684 National Ranking 102

Overview

What is he best known for?

The fields of study Toshiro Hiramoto is best known for:

  • Semiconductor
  • Electron
  • Capacitor

Optoelectronics and Gallium arsenide are two areas of study in which Toshiro Hiramoto engages in interdisciplinary research. He integrates Voltage with Capacitance in his research. Much of his study explores Capacitance relationship to Physical chemistry. Many of his studies involve connections with topics such as Electrode and Physical chemistry. Toshiro Hiramoto integrates several fields in his works, including Electrode and Capacitor. He connects Capacitor with Voltage in his study. Toshiro Hiramoto regularly ties together related areas like Quantum wire in his Quantum mechanics studies. He incorporates Transistor and MOSFET in his studies. Toshiro Hiramoto integrates many fields, such as MOSFET and Threshold voltage, in his works.

His most cited work include:

  • Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals (286 citations)
  • Quantum mechanical effects in the silicon quantum dot in a single-electron transistor (181 citations)
  • Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation (87 citations)

What are the main themes of his work throughout his whole career to date

As part of his studies on Optoelectronics, Toshiro Hiramoto often connects relevant areas like Silicon on insulator. He undertakes multidisciplinary studies into Silicon on insulator and Silicon in his work. In his research, he performs multidisciplinary study on Silicon and Quantum dot. Quantum dot and Coulomb blockade are two areas of study in which he engages in interdisciplinary research. His research on Coulomb blockade frequently links to adjacent areas such as Quantum mechanics. Quantum mechanics is closely attributed to Voltage in his research. His Voltage study frequently draws connections to other fields, such as Threshold voltage. Toshiro Hiramoto applies his multidisciplinary studies on Threshold voltage and Field-effect transistor in his research. Toshiro Hiramoto undertakes interdisciplinary study in the fields of Field-effect transistor and Semiconductor through his works.

Toshiro Hiramoto most often published in these fields:

  • Optoelectronics (88.03%)
  • Voltage (78.63%)
  • Transistor (70.94%)

What were the highlights of his more recent work (between 2018-2022)?

  • Optoelectronics (100.00%)
  • Voltage (76.92%)
  • Electrical engineering (76.92%)

In recent works Toshiro Hiramoto was focusing on the following fields of study:

His work in Composite material is not limited to one particular discipline; it also encompasses Nanometre and Layer (electronics). His study in Nanotechnology extends to Layer (electronics) with its themes. In his works, Toshiro Hiramoto performs multidisciplinary study on Nanotechnology and Nanometre. Toshiro Hiramoto integrates Optoelectronics and Photodiode in his research. His study ties his expertise on Ferroelectric capacitor together with the subject of Voltage. He conducted interdisciplinary study in his works that combined Ferroelectric capacitor and Dielectric. Toshiro Hiramoto combines Dielectric and Electric field in his research. Borrowing concepts from Voltage, Toshiro Hiramoto weaves in ideas under Electric field. Electrical engineering and Semiconductor are frequently intertwined in his study.

Between 2018 and 2022, his most popular works were:

  • Ferroelectric HfO2 Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process (70 citations)
  • Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application (34 citations)
  • On the Physical Mechanism of Transient Negative Capacitance Effect in Deep Subthreshold Region (22 citations)

In his most recent research, the most cited works focused on:

  • Capacitor
  • Ferroelectric capacitor
  • Dielectric

His Ferroelectricity study frequently draws parallels with other fields, such as Optoelectronics. His research on Optoelectronics frequently links to adjacent areas such as Dielectric. In his study, he carries out multidisciplinary Dielectric and Ferroelectricity research. He integrates Electrical engineering and Electronic engineering in his research. Toshiro Hiramoto carries out multidisciplinary research, doing studies in Electronic engineering and Electrical engineering. Toshiro Hiramoto merges Voltage with Voltage source in his study. As part of his studies on Voltage source, Toshiro Hiramoto often connects relevant areas like Negative impedance converter. As part of his studies on Negative impedance converter, he often connects relevant areas like Voltage. Toshiro Hiramoto merges Non-volatile memory with Ferroelectric capacitor in his study.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals

Yi Shi;Yi Shi;Kenichi Saito;Hiroki Ishikuro;Toshiro Hiramoto.
Journal of Applied Physics (1998)

419 Citations

Quantum mechanical effects in the silicon quantum dot in a single-electron transistor

Hiroki Ishikuro;Toshiro Hiramoto.
Applied Physics Letters (1997)

248 Citations

Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate

H. Ishikuro;T. Fujii;T. Saraya;G. Hashiguchi.
Applied Physics Letters (1996)

229 Citations

Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies

K. Takeuchi;T. Fukai;T. Tsunomura;A.T. Putra.
international electron devices meeting (2007)

223 Citations

Impact of drain induced barrier lowering on read scheme in silicon nanocrystal memory with two-bit-per-cell operation

Sangsu Park;Sangsu Park;Hyunsik Im;Ilgweon Kim;Toshiro Hiramoto.
Japanese Journal of Applied Physics (2006)

155 Citations

Boosted gate MOS (BGMOS): device/circuit cooperation scheme to achieve leakage-free giga-scale integration

T. Inukai;M. Takamiya;K. Nose;H. Kawaguchi.
custom integrated circuits conference (2000)

153 Citations

Experimental evidence for quantum mechanical narrow channel effect in ultra-narrow MOSFET's

H. Majima;H. Ishikuro;H. Ishikuro;T. Hiramoto.
IEEE Electron Device Letters (2000)

118 Citations

Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation

Toshiro Hiramoto;Kazuhiko Hirakawa;Yasuhiro Iye;Toshiaki Ikoma.
Applied Physics Letters (1989)

114 Citations

Impact of Parameter Variations and Random Dopant Fluctuations on Short-Channel Fully Depleted SOI MOSFETs With Extremely Thin BOX

T. Ohtou;N. Sugii;T. Hiramoto.
IEEE Electron Device Letters (2007)

112 Citations

Control of Coulomb blockade oscillations in silicon single electron transistors using silicon nanocrystal floating gates

Nobuyoshi Takahashi;Hiroki Ishikuro;Toshiro Hiramoto.
Applied Physics Letters (2000)

109 Citations

If you think any of the details on this page are incorrect, let us know.

Contact us

Best Scientists Citing Toshiro Hiramoto

Byung-Gook Park

Byung-Gook Park

Seoul National University

Publications: 32

Asen Asenov

Asen Asenov

University of Glasgow

Publications: 30

Eddy Simoen

Eddy Simoen

Ghent University

Publications: 26

Gerard Ghibaudo

Gerard Ghibaudo

Grenoble Alpes University

Publications: 24

Jianlin Liu

Jianlin Liu

University of California, Riverside

Publications: 20

Yasuo Takahashi

Yasuo Takahashi

Hokkaido University

Publications: 19

Cor Claeys

Cor Claeys

Imec

Publications: 18

Takayasu Sakurai

Takayasu Sakurai

University of Tokyo

Publications: 17

Ru Huang

Ru Huang

Peking University

Publications: 17

Jean-Pierre Colinge

Jean-Pierre Colinge

CEA LETI

Publications: 17

Kazuhiko Endo

Kazuhiko Endo

National Institute of Advanced Industrial Science and Technology

Publications: 17

Francisco Gamiz

Francisco Gamiz

University of Granada

Publications: 16

Kiyoo Itoh

Kiyoo Itoh

National Yang Ming Chiao Tung University

Publications: 16

Hyungcheol Shin

Hyungcheol Shin

Seoul National University

Publications: 15

Chenming Hu

Chenming Hu

University of California, Berkeley

Publications: 14

Yangyuan Wang

Yangyuan Wang

Peking University

Publications: 13

Trending Scientists

Xiu-Ping Yan

Xiu-Ping Yan

Jiangnan University

Dmitri I. Svergun

Dmitri I. Svergun

European Bioinformatics Institute

Otwin Breitenstein

Otwin Breitenstein

Max Planck Society

Qiaoliang Bao

Qiaoliang Bao

Monash University

Jennifer L. Gerton

Jennifer L. Gerton

Stowers Institute for Medical Research

Stefano Marangon

Stefano Marangon

Istituto Zooprofilattico Sperimentale delle Venezie

Salvatore Ceccarelli

Salvatore Ceccarelli

Independent Scientist / Consultant, Italy

Sergio E. Baranzini

Sergio E. Baranzini

University of California, San Francisco

John R. Tagg

John R. Tagg

BLIS Technologies

David S. King

David S. King

University of California, Berkeley

Christoph J. Senff

Christoph J. Senff

National Oceanic and Atmospheric Administration

Tomas Angel DelValls

Tomas Angel DelValls

University of Cádiz

Jacqui Smith

Jacqui Smith

University of Michigan–Ann Arbor

Petra Gastmeier

Petra Gastmeier

Charité - University Medicine Berlin

Helga Leitner

Helga Leitner

University of California, Los Angeles

Barak Ariel

Barak Ariel

Hebrew University of Jerusalem

Something went wrong. Please try again later.