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Toshiro Hiramoto

Toshiro Hiramoto

University of Tokyo
Japan

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 45 3540 3398 129 122 591 8425

Toshiro Hiramoto publications per year

The chart shows the history of publications by Toshiro Hiramoto between 1964 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Toshiro Hiramoto published across 62 years, from 1964 to 2025, averaging 10.2 papers a year. Output peaked at 40 publications in 2019. 36 of the 630 publications appeared in the last two years.

No. of publications
10 20 30 40
Bar chart. Horizontal axis: year, 1964 to 2025. Vertical axis: number of publications, 0 to 40. Peak 40 publications in 2019. 1964: 1 publication 1965: 0 publications 1966: 0 publications 1967: 0 publications 1968: 0 publications 1969: 0 publications 1970: 0 publications 1971: 0 publications 1972: 0 publications 1973: 0 publications 1974: 0 publications 1975: 0 publications 1976: 0 publications 1977: 0 publications 1978: 0 publications 1979: 0 publications 1980: 0 publications 1981: 0 publications 1982: 0 publications 1983: 0 publications 1984: 0 publications 1985: 2 publications 1986: 1 publication 1987: 1 publication 1988: 1 publication 1989: 3 publications 1990: 0 publications 1991: 2 publications 1992: 2 publications 1993: 3 publications 1994: 2 publications 1995: 2 publications 1996: 6 publications 1997: 6 publications 1998: 16 publications 1999: 20 publications 2000: 19 publications 2001: 14 publications 2002: 13 publications 2003: 20 publications 2004: 15 publications 2005: 24 publications 2006: 21 publications 2007: 20 publications 2008: 20 publications 2009: 22 publications 2010: 23 publications 2011: 16 publications 2012: 14 publications 2013: 30 publications 2014: 26 publications 2015: 19 publications 2016: 22 publications 2017: 25 publications 2018: 27 publications 2019: 40 publications 2020: 30 publications 2021: 34 publications 2022: 18 publications 2023: 14 publications 2024: 16 publications 2025: 20 publications
1964 2025

630 publications in total across all disciplines

View publications per year as a table
Toshiro Hiramoto: publications per year, 1964 to 2025
Year Publications
1964 1
1965 0
1966 0
1967 0
1968 0
1969 0
1970 0
1971 0
1972 0
1973 0
1974 0
1975 0
1976 0
1977 0
1978 0
1979 0
1980 0
1981 0
1982 0
1983 0
1984 0
1985 2
1986 1
1987 1
1988 1
1989 3
1990 0
1991 2
1992 2
1993 3
1994 2
1995 2
1996 6
1997 6
1998 16
1999 20
2000 19
2001 14
2002 13
2003 20
2004 15
2005 24
2006 21
2007 20
2008 20
2009 22
2010 23
2011 16
2012 14
2013 30
2014 26
2015 19
2016 22
2017 25
2018 27
2019 40
2020 30
2021 34
2022 18
2023 14
2024 16
2025 20
Total 630
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Toshiro Hiramoto publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Toshiro Hiramoto sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 574–593 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 591 publications — 90th percentile

90% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58 591
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Toshiro Hiramoto D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Toshiro Hiramoto sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 45 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 45 D-Index — 50th percentile

50% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189 45
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Toshiro Hiramoto is affiliated with the University of Tokyo in Japan, with a primary focus on engineering, particularly in electrical and electronic engineering. Their research portfolio encompasses a broad range of topics within semiconductor materials and devices, with significant emphasis on advancements in semiconductor devices and circuit design, ferroelectric and negative capacitance devices, advanced memory and neural computing, nanowire synthesis and applications, silicon carbide semiconductor technologies, and MXene and MAX phase materials.

Their frequent publication venues highlight engagement with highly specialized journals and conferences, including:

  • Japanese Journal of Applied Physics
  • IEEE Transactions on Electron Devices
  • IEEE Journal of the Electron Devices Society
  • IEEE Silicon Nanoelectronics Workshop
  • Applied Physics Letters

Toshiro Hiramoto has been a contributor to various research papers over the years. Notable recent publications include:

  • Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application, 2020, IEEE Journal of the Electron Devices Society
  • A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide, 2022, IEEE Electron Device Letters
  • Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics, 2022, Nano Convergence
  • Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application, 2021, IEEE Transactions on Electron Devices
  • Reliability characteristics of metal/ferroelectric-HfO2/IGZO/metal capacitor for non-volatile memory application, 2020, Applied Physics Express

The scientist often collaborates with several co-authors across different studies. Frequent co-authors include:

  • Takuya Saraya
  • Masaharu Kobayashi
  • Kiyoshi Takeuchi
  • T. Mizutani
  • Fei Mo

Their work centers on engineering approaches that integrate various semiconductor and ferroelectric materials to develop devices for memory applications and advanced electronics. The range of publication venues and topics illustrates a focus on both the fundamental materials chemistry and applied device physics underlying modern semiconductor technology.

Best Publications

  • Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals

    Yi Shi;Yi Shi;Kenichi Saito;Hiroki Ishikuro;Toshiro Hiramoto

  • Quantum mechanical effects in the silicon quantum dot in a single-electron transistor

    Hiroki Ishikuro;Toshiro Hiramoto

  • Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies

    K. Takeuchi;T. Fukai;T. Tsunomura;A.T. Putra

  • Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate

    H. Ishikuro;T. Fujii;T. Saraya;G. Hashiguchi

  • Impact of drain induced barrier lowering on read scheme in silicon nanocrystal memory with two-bit-per-cell operation

    Sangsu Park;Sangsu Park;Hyunsik Im;Ilgweon Kim;Toshiro Hiramoto

  • Boosted gate MOS (BGMOS): device/circuit cooperation scheme to achieve leakage-free giga-scale integration

    T. Inukai;M. Takamiya;K. Nose;H. Kawaguchi

  • On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    Masaharu Kobayashi;Toshiro Hiramoto

  • Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application

    Fei Mo;Yusaku Tagawa;Chengji Jin;MinJu Ahn

  • Negative Capacitance for Boosting Tunnel FET performance

    Masaharu Kobayashi;Kyungmin Jang;Nozomu Ueyama;Toshiro Hiramoto

  • Experimental evidence for quantum mechanical narrow channel effect in ultra-narrow MOSFET's

    H. Majima;H. Ishikuro;H. Ishikuro;T. Hiramoto

  • Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation

    Toshiro Hiramoto;Kazuhiko Hirakawa;Yasuhiro Iye;Toshiaki Ikoma

  • Ferroelectric HfO 2 Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process

    Masaharu Kobayashi;Yusaku Tagawa;Fei Mo;Takuya Saraya

  • Impact of Parameter Variations and Random Dopant Fluctuations on Short-Channel Fully Depleted SOI MOSFETs With Extremely Thin BOX

    T. Ohtou;N. Sugii;T. Hiramoto

  • Experimental study on polarization-limited operation speed of negative capacitance FET with ferroelectric HfO 2

    Masaharu Kobayashi;Nozomu Ueyama;Kyungmin Jang;Toshiro Hiramoto

  • Control of Coulomb blockade oscillations in silicon single electron transistors using silicon nanocrystal floating gates

    Nobuyoshi Takahashi;Hiroki Ishikuro;Toshiro Hiramoto

  • Experimental study on quantum confinement effects in silicon nanowire metal-oxide-semiconductor field-effect transistors and single-electron transistors

    Masaharu Kobayashi;Toshiro Hiramoto

  • On the origin of tunneling barriers in silicon single electron and single hole transistors

    Hiroki Ishikuro;Toshiro Hiramoto

  • Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias

    Toshiro Hiramoto;Makoto Takamiya

  • Direct Measurement of Correlation Between SRAM Noise Margin and Individual Cell Transistor Variability by Using Device Matrix Array

    T. Hiramoto;M. Suzuki;X. Song;K. Shimizu

  • Extension of Coulomb blockade region by quantum confinement in the ultrasmall silicon dot in a single-hole transistor at room temperature

    Masumi Saitoh;Toshiro Hiramoto

  • VTCMOS characteristics and its optimum conditions predicted by a compact analytical model

    Hyunsik Im;T. Inukai;H. Gomyo;T. Hiramoto

Frequent Co-Authors

Hiroshi Toshiyoshi
Hiroshi Toshiyoshi University of Tokyo
Makoto Takamiya
Makoto Takamiya University of Tokyo
Takayasu Sakurai
Takayasu Sakurai University of Tokyo
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Hyunsik Im
Hyunsik Im Dongguk University
Hiromichi Ohashi
Hiromichi Ohashi Tokyo Institute of Technology
Hiroyuki Fujita
Hiroyuki Fujita Tokyo City University
Hiroshi Kawaguchi
Hiroshi Kawaguchi University of Tokyo
Kazuhiko Hirakawa
Kazuhiko Hirakawa University of Tokyo
Shinichiro Kimura
Shinichiro Kimura Hitachi (Japan)

External Links

Personal website of Toshiro Hiramoto

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