Optoelectronics and Gallium arsenide are two areas of study in which Toshiro Hiramoto engages in interdisciplinary research. He integrates Voltage with Capacitance in his research. Much of his study explores Capacitance relationship to Physical chemistry. Many of his studies involve connections with topics such as Electrode and Physical chemistry. Toshiro Hiramoto integrates several fields in his works, including Electrode and Capacitor. He connects Capacitor with Voltage in his study. Toshiro Hiramoto regularly ties together related areas like Quantum wire in his Quantum mechanics studies. He incorporates Transistor and MOSFET in his studies. Toshiro Hiramoto integrates many fields, such as MOSFET and Threshold voltage, in his works.
As part of his studies on Optoelectronics, Toshiro Hiramoto often connects relevant areas like Silicon on insulator. He undertakes multidisciplinary studies into Silicon on insulator and Silicon in his work. In his research, he performs multidisciplinary study on Silicon and Quantum dot. Quantum dot and Coulomb blockade are two areas of study in which he engages in interdisciplinary research. His research on Coulomb blockade frequently links to adjacent areas such as Quantum mechanics. Quantum mechanics is closely attributed to Voltage in his research. His Voltage study frequently draws connections to other fields, such as Threshold voltage. Toshiro Hiramoto applies his multidisciplinary studies on Threshold voltage and Field-effect transistor in his research. Toshiro Hiramoto undertakes interdisciplinary study in the fields of Field-effect transistor and Semiconductor through his works.
His work in Composite material is not limited to one particular discipline; it also encompasses Nanometre and Layer (electronics). His study in Nanotechnology extends to Layer (electronics) with its themes. In his works, Toshiro Hiramoto performs multidisciplinary study on Nanotechnology and Nanometre. Toshiro Hiramoto integrates Optoelectronics and Photodiode in his research. His study ties his expertise on Ferroelectric capacitor together with the subject of Voltage. He conducted interdisciplinary study in his works that combined Ferroelectric capacitor and Dielectric. Toshiro Hiramoto combines Dielectric and Electric field in his research. Borrowing concepts from Voltage, Toshiro Hiramoto weaves in ideas under Electric field. Electrical engineering and Semiconductor are frequently intertwined in his study.
His Ferroelectricity study frequently draws parallels with other fields, such as Optoelectronics. His research on Optoelectronics frequently links to adjacent areas such as Dielectric. In his study, he carries out multidisciplinary Dielectric and Ferroelectricity research. He integrates Electrical engineering and Electronic engineering in his research. Toshiro Hiramoto carries out multidisciplinary research, doing studies in Electronic engineering and Electrical engineering. Toshiro Hiramoto merges Voltage with Voltage source in his study. As part of his studies on Voltage source, Toshiro Hiramoto often connects relevant areas like Negative impedance converter. As part of his studies on Negative impedance converter, he often connects relevant areas like Voltage. Toshiro Hiramoto merges Non-volatile memory with Ferroelectric capacitor in his study.
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Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals
Yi Shi;Yi Shi;Kenichi Saito;Hiroki Ishikuro;Toshiro Hiramoto.
Journal of Applied Physics (1998)
Quantum mechanical effects in the silicon quantum dot in a single-electron transistor
Hiroki Ishikuro;Toshiro Hiramoto.
Applied Physics Letters (1997)
Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate
H. Ishikuro;T. Fujii;T. Saraya;G. Hashiguchi.
Applied Physics Letters (1996)
Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies
K. Takeuchi;T. Fukai;T. Tsunomura;A.T. Putra.
international electron devices meeting (2007)
Impact of drain induced barrier lowering on read scheme in silicon nanocrystal memory with two-bit-per-cell operation
Sangsu Park;Sangsu Park;Hyunsik Im;Ilgweon Kim;Toshiro Hiramoto.
Japanese Journal of Applied Physics (2006)
Boosted gate MOS (BGMOS): device/circuit cooperation scheme to achieve leakage-free giga-scale integration
T. Inukai;M. Takamiya;K. Nose;H. Kawaguchi.
custom integrated circuits conference (2000)
Experimental evidence for quantum mechanical narrow channel effect in ultra-narrow MOSFET's
H. Majima;H. Ishikuro;H. Ishikuro;T. Hiramoto.
IEEE Electron Device Letters (2000)
Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation
Toshiro Hiramoto;Kazuhiko Hirakawa;Yasuhiro Iye;Toshiaki Ikoma.
Applied Physics Letters (1989)
Impact of Parameter Variations and Random Dopant Fluctuations on Short-Channel Fully Depleted SOI MOSFETs With Extremely Thin BOX
T. Ohtou;N. Sugii;T. Hiramoto.
IEEE Electron Device Letters (2007)
Control of Coulomb blockade oscillations in silicon single electron transistors using silicon nanocrystal floating gates
Nobuyoshi Takahashi;Hiroki Ishikuro;Toshiro Hiramoto.
Applied Physics Letters (2000)
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