The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Toshiro Hiramoto sits on this spectrum.
This scientist: 591 publications — 90th percentile
90% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Toshiro Hiramoto sits on this spectrum.
This scientist: 45 D-Index — 50th percentile
50% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Toshiro Hiramoto is affiliated with the University of Tokyo in Japan, with a primary focus on engineering, particularly in electrical and electronic engineering. Their research portfolio encompasses a broad range of topics within semiconductor materials and devices, with significant emphasis on advancements in semiconductor devices and circuit design, ferroelectric and negative capacitance devices, advanced memory and neural computing, nanowire synthesis and applications, silicon carbide semiconductor technologies, and MXene and MAX phase materials.
Their frequent publication venues highlight engagement with highly specialized journals and conferences, including:
Toshiro Hiramoto has been a contributor to various research papers over the years. Notable recent publications include:
The scientist often collaborates with several co-authors across different studies. Frequent co-authors include:
Their work centers on engineering approaches that integrate various semiconductor and ferroelectric materials to develop devices for memory applications and advanced electronics. The range of publication venues and topics illustrates a focus on both the fundamental materials chemistry and applied device physics underlying modern semiconductor technology.
Yi Shi;Yi Shi;Kenichi Saito;Hiroki Ishikuro;Toshiro Hiramoto
Hiroki Ishikuro;Toshiro Hiramoto
K. Takeuchi;T. Fukai;T. Tsunomura;A.T. Putra
H. Ishikuro;T. Fujii;T. Saraya;G. Hashiguchi
Sangsu Park;Sangsu Park;Hyunsik Im;Ilgweon Kim;Toshiro Hiramoto
T. Inukai;M. Takamiya;K. Nose;H. Kawaguchi
Masaharu Kobayashi;Toshiro Hiramoto
Fei Mo;Yusaku Tagawa;Chengji Jin;MinJu Ahn
Masaharu Kobayashi;Kyungmin Jang;Nozomu Ueyama;Toshiro Hiramoto
H. Majima;H. Ishikuro;H. Ishikuro;T. Hiramoto
Toshiro Hiramoto;Kazuhiko Hirakawa;Yasuhiro Iye;Toshiaki Ikoma
Masaharu Kobayashi;Yusaku Tagawa;Fei Mo;Takuya Saraya
T. Ohtou;N. Sugii;T. Hiramoto
Masaharu Kobayashi;Nozomu Ueyama;Kyungmin Jang;Toshiro Hiramoto
Nobuyoshi Takahashi;Hiroki Ishikuro;Toshiro Hiramoto
Masaharu Kobayashi;Toshiro Hiramoto
Hiroki Ishikuro;Toshiro Hiramoto
Toshiro Hiramoto;Makoto Takamiya
T. Hiramoto;M. Suzuki;X. Song;K. Shimizu
Masumi Saitoh;Toshiro Hiramoto
Hyunsik Im;T. Inukai;H. Gomyo;T. Hiramoto
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