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Kiyoo Itoh

Kiyoo Itoh

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
54
Citations
8324
World Ranking
2333
National Ranking
82

Research.com Recognitions

  • 2006 - IEEE Jun-ichi Nishizawa Medal "For pioneering contributions to dynamic random access memory (DRAM) cell structures and architecture.”
  • 1993 - IEEE Donald O. Pederson Award in Solid-State Circuits "For technical contributions to folded data-line circuits and the development of high-density dynamic RAMs."

Overview

Kiyoo Itoh is a researcher affiliated with National Yang Ming Chiao Tung University in Taiwan. Their work focuses on semiconductor technologies, particularly dynamic random access memory (DRAM) cell structures and architecture.

Throughout their career, Kiyoo Itoh has received notable recognitions for contributions to the field of solid-state circuits and memory design. These include the IEEE Jun-ichi Nishizawa Medal awarded in 2006 for "pioneering contributions to dynamic random access memory (DRAM) cell structures and architecture."

Earlier, in 1993, they were awarded the IEEE Donald O. Pederson Award in Solid-State Circuits "for technical contributions to folded data-line circuits and the development of high-density dynamic RAMs."

There are no publicly listed recent papers, co-authors, publication venues, or fields of study documented here. However, their recognized achievements suggest a specialization in memory circuit design and semiconductor integrated circuits.

Best Publications

  • Semiconductor integrated circuit device having power reduction mechanism

    Masashi Horiguchi;Kunio Uchiyama;Kiyoo Itoh;Takeshi Sakata

  • An experimental 1.5-V 64-Mb DRAM

    Y. Nakagome;H. Tanaka;K. Takeuchi;E. Kume

  • Semiconductor memory cell and method of forming same

    Hideyuki Matsuoka;Kiyoo Itoh;Motoyasu Terao;Satoru Hanzawa

  • VLSI Memory Chip Design

    Kiyoo Itoh

  • Review and future prospects of low-voltage RAM circuits

    Y. Nakagome;M. Horiguchi;T. Kawahara;K. Itoh

  • Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions

    Takao Watanabe;Ryoichi Hori;Goro Kitsukawa;Yoshiki Kawajiri

  • A corrugated capacitor cell (CCC) for megabit dynamic MOS memories

    H. Sunami;T. Kure;N. Hashimoto;K. Itoh

  • Limitations and challenges of multigigabit DRAM chip design

    K. Itoh;Y. Nakagome;S. Kimura;T. Watanabe

  • Semiconductor circuit with low power consumption having emitter-coupled logic or differential amplifier

    Goro Kitsukawa;Kazumasa Yanagisawa;Takayuki Kawahara;Ryoichi Hori

  • SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS OPERATION METHOD, ESPECIALLY INCLUDING SERVAL SWITCHING MOSFETS FOR CONTROLLING DRIVING CURRENT SEQUENTLY

    Noda Hiromasa;Aoki Masakazu;Idei Youji;Kajigaya Kazuhiko

  • Crown-shaped stacked-capacitor cell for 1.5-V operation 64-Mb DRAMs

    T. Kaga;T. Kure;H. Shinriki;Y. Kawamoto

  • Semiconductor integrated circuits with power reduction mechanism

    Takeshi Sakata;Kiyoo Itoh;Masashi Horiguchi

  • Static random access memory having a memory cell operating voltage larger than an operating voltage of a peripheral circuit

    Kiyoo Itoh;Koichiro Ishibashi

  • Large scale integrated circuit for low voltage operation

    Jun Etoh;Kiyoo Itoh;Yoshiki Kawajiri;Yoshinobu Nakagome

  • Semiconductor integrated circuit including voltage converter effective at low operational voltages

    Hitoshi Tanaka;Masakazu Aoki;Kiyoo Itoh

  • Large scale integrated circuit with sense amplifier circuits for low voltage operation

    Jun Etoh;Kiyoo Itoh;Yoshiki Kawajiri;Yoshinobu Nakagome

  • Semiconductor memory device having separately biased wells for isolation

    Shinji Nakazato;Hideaki Uchida;Yoshikasu Saito;Masahiro Yamamura

  • Semiconductor integrated circuit device comprising a memory array and a processing circuit

    Takao Watanabe;Katsutaka Kimura;Kiyoo Itoh;Yoshiki Kawajiri

  • The impact of data-line interference noise on DRAM scaling

    Y. Nakagome;M. Aoki;S. Ikenaga;M. Horiguchi

  • Controllable conduction device

    Kazuo Nakazato;Kiyoo Itoh;Hiroshi Mizuta;Toshikazu Shimada

  • Semiconductor device including interface circuit, logic circuit, and static memory array having transistors of various threshold voltages and being supplied with various supply voltages

    Kiyoo Itoh;Hiroyuki Mizuno

  • Semiconductor device having a reference voltage generating circuit

    Masashi Horiguchi;Masakazu Aoki;Kiyoo Itoh;Yoshinobu Nakagome

Frequent Co-Authors

Takayuki Kawahara
Takayuki Kawahara Tokyo University of Science
Masashi Horiguchi
Masashi Horiguchi Hitachi (Japan)
Shinichiro Kimura
Shinichiro Kimura Hitachi (Japan)
Haroon Ahmed
Haroon Ahmed University of Cambridge
Jan M. Rabaey
Jan M. Rabaey University of California, Berkeley
Asad A. Abidi
Asad A. Abidi University of California, Los Angeles
Mark Horowitz
Mark Horowitz Stanford University

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