2017 - IEEE Fellow For leadership in high-density memory technologies for automotive applications
His scientific interests lie mostly in Electrical engineering, Semiconductor memory, Memory cell, Transistor and Computer hardware. His Electrical engineering study incorporates themes from Soi substrate and Electronic engineering. His research in Semiconductor memory focuses on subjects like Amplifier, which are connected to Sense.
Hideto Hidaka integrates many fields, such as Memory cell, Line and Column, in his works. The various areas that Hideto Hidaka examines in his Transistor study include Low voltage, Diffusion capacitance, Optoelectronics, CMOS and Reading. His work on Dram as part of general Computer hardware research is frequently linked to Page cache, bridging the gap between disciplines.
His main research concerns Electrical engineering, Semiconductor memory, Memory cell, Electronic engineering and Computer hardware. His Electrical engineering research incorporates themes from Dram and Semiconductor device. Hideto Hidaka focuses mostly in the field of Semiconductor memory, narrowing it down to topics relating to Control circuit and, in certain cases, Control signal.
His research in the fields of Semiconductor storage overlaps with other disciplines such as Column, Word and Line. His study explores the link between Electronic engineering and topics such as Amplifier that cross with problems in Sense. His Computer hardware research is multidisciplinary, incorporating elements of Spare part and Parallel computing.
The scientist’s investigation covers issues in Electrical engineering, Mechanical engineering, Thermoelectric effect, Chemical engineering and Casing. His work on Signal, Voltage and Memory cell as part of general Electrical engineering research is often related to Word, thus linking different fields of science. In his study, Semiconductor device is strongly linked to Access time, which falls under the umbrella field of Signal.
Hideto Hidaka focuses mostly in the field of Voltage, narrowing it down to matters related to Integrated circuit and, in some cases, Transistor. The study incorporates disciplines such as Resistor, Magnetic memory and Sequence in addition to Memory cell. As a member of one scientific family, he mostly works in the field of Thermoelectric effect, focusing on Current and, on occasion, Spin.
His primary areas of study are Electrical engineering, Port, Thermoelectric effect, Casing and Mechanical engineering. His Resistor and Memory cell study, which is part of a larger body of work in Electrical engineering, is frequently linked to Line and Set, bridging the gap between disciplines. His Port research is multidisciplinary, incorporating perspectives in Heat transfer and Current.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
A built-in self-repair analyzer (CRESTA) for embedded DRAMs
T. Kawagoe;J. Ohtani;M. Niiro;T. Ooishi.
international test conference (2000)
Semiconductor memory device allowing high-speed operation of internal data buses
Hideto Hidaka.
(1999)
An SOI-DRAM with wide operating voltage range by CMOS/SIMOX technology
K. Suma;T. Tsuruda;H. Hidaka;T. Eimori.
international solid-state circuits conference (1994)
Semiconductor device with reduced current consumption in standby state
Tsukasa Ooishi;Takaharu Tsuji;Masatoshi Ishikawa;Hideto Hidaka.
(2003)
The Evaluation of Direct Cooling and Heating Desiccant Device Coated with FAM
Satomi Shimooka;Kazunori Oshima;Hideto Hidaka;Takahiko Takewaki.
Journal of Chemical Engineering of Japan (2007)
Twisted bit-line architectures for multi-megabit DRAMs
H. Hidaka;K. Fujishima;Y. Matsuda;M. Asakura.
IEEE Journal of Solid-state Circuits (1989)
Semiconductor memory device containing a cache and an operation method thereof
Hideto Hidaka;Kazuyasu Fujishima;Yoshio Matsuda;Mikio Asakura.
(1990)
Semiconductor memory device having a hierarchical bit line structure with reduced interference noise
Hideto Hidaka.
(1994)
Method and apparatus for driving word line in block access memory
Yoshio Matsuda;Kazuyasu Fujishima;Hideto Hidaka.
(1990)
Semiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regions
Hideto Hidaka;Takahiro Tsuruda;Katsuhiro Suma.
(1995)
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