What is he best known for?
The fields of study he is best known for:
- Electrical engineering
- Operating system
- Integrated circuit
Seung H. Kang spends much of his time researching Tunnel magnetoresistance, Magnetoresistive random-access memory, Electronic engineering, Electrical engineering and Layer.
Seung H. Kang interconnects Optoelectronics, Stack, Perpendicular and Nuclear magnetic resonance in the investigation of issues within Tunnel magnetoresistance.
The Magnetoresistive random-access memory study combines topics in areas such as Bit cell, Transistor, Spin-transfer torque, Line and Key.
His work carried out in the field of Electronic engineering brings together such families of science as Resistive element and Voltage.
His Electrical engineering research is multidisciplinary, incorporating elements of Path and Spintronics.
His research in the fields of Barrier layer overlaps with other disciplines such as Coupling.
His most cited work include:
- 45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell (278 citations)
- Magnetic tunnel junction device and fabrication (214 citations)
- Method of forming a magnetic tunnel junction structure (119 citations)
What are the main themes of his work throughout his whole career to date?
Seung H. Kang focuses on Electrical engineering, Tunnel magnetoresistance, Magnetoresistive random-access memory, Optoelectronics and Electronic engineering.
His research in Tunnel magnetoresistance intersects with topics in Stack, Perpendicular and Quantum tunnelling.
His work investigates the relationship between Magnetoresistive random-access memory and topics such as Spin-transfer torque that intersect with problems in Word.
His study in the field of Dielectric also crosses realms of Fabrication.
His Electronic engineering study incorporates themes from Electronic circuit, Process variation, Voltage reference and Monte Carlo method.
His research in the fields of Barrier layer overlaps with other disciplines such as Coupling.
He most often published in these fields:
- Electrical engineering (45.54%)
- Tunnel magnetoresistance (42.90%)
- Magnetoresistive random-access memory (35.31%)
What were the highlights of his more recent work (between 2015-2021)?
- Voltage (18.15%)
- Magnetoresistive random-access memory (35.31%)
- Tunnel magnetoresistance (42.90%)
In recent papers he was focusing on the following fields of study:
Voltage, Magnetoresistive random-access memory, Tunnel magnetoresistance, Electrical engineering and Transistor are his primary areas of study.
The various areas that Seung H. Kang examines in his Voltage study include Energy, Electronic engineering, CMOS and Offset.
His biological study spans a wide range of topics, including Random access memory, Overhead and Integrated circuit.
His studies deal with areas such as Bit cell, Breakdown voltage, Resistive random-access memory, Magnetoresistance and Quantum tunnelling as well as Magnetoresistive random-access memory.
His Tunnel magnetoresistance research integrates issues from Optoelectronics, Spin-transfer torque and Perpendicular.
His Electrical engineering study integrates concerns from other disciplines, such as Torque and Pulse.
Between 2015 and 2021, his most popular works were:
- A Study on Practically Unlimited Endurance of STT-MRAM (29 citations)
- Systematic validation of 2x nm diameter perpendicular MTJ arrays and MgO barrier for sub-10 nm embedded STT-MRAM with practically unlimited endurance (24 citations)
- Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS (21 citations)
In his most recent research, the most cited papers focused on:
- Electrical engineering
- Operating system
- Integrated circuit
His primary scientific interests are in Magnetoresistive random-access memory, Voltage, Electrical engineering, Tunnel magnetoresistance and Transistor.
His Magnetoresistive random-access memory research incorporates elements of Computer architecture, Breakdown voltage, Magnetoresistance, Optoelectronics and Node.
Seung H. Kang has included themes like Electronic engineering, CMOS, Offset and Integrated circuit in his Voltage study.
His work on Electrical engineering is being expanded to include thematically relevant topics such as Torque.
Seung H. Kang usually deals with Tunnel magnetoresistance and limits it to topics linked to Perpendicular and Magnetization.
His Transistor study incorporates themes from Non-volatile memory and Sense amplifier.
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