World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
5524
World Ranking
4748
National Ranking
1663

Overview

Seung H. Kang is affiliated with Qualcomm in the United States and focuses primarily on research within engineering. Their work encompasses a broad range of topics in electrical and electronic engineering, with specific involvement in atomic and molecular physics and optics, biomedical engineering, electronic, optical and magnetic materials, and artificial intelligence.

Their research contributions address several key topics including:

  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Magnetic properties of thin films
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Advanced Sensor and Energy Harvesting Materials
  • Magnetic Properties and Applications

The following papers represent selected recent contributions, highlighting their involvement in memory technologies and circuit design:

  • "STT-MRAM Sensing: A Review," 2020, published in IEEE Transactions on Circuits & Systems II Express Briefs
  • "Performance Prospects of Deeply Scaled Spin-Transfer Torque Magnetic Random-Access Memory for In-Memory Computing," 2020, IEEE Electron Device Letters
  • "Environmental-Variation-Tolerant Magnetic Tunnel Junction-Based Physical Unclonable Function Cell With Auto Write-Back Technique," 2021, IEEE Transactions on Information Forensics and Security
  • "Self-Referenced Single-Ended Resistance Monitoring Write Termination Scheme for STT-RAM Write Energy Reduction," 2021, IEEE Transactions on Circuits and Systems I Regular Papers
  • "Distribution Analysis and Multiple-point Tail Fitting Yield Estimation Method for STT-MRAM," 2020, JSTS Journal of Semiconductor Technology and Science

The scientist has collaborated frequently with several co-authors including Seong-Ook Jung, Taehui Na, Byungkyu Song, Changyi Li, and Yuan Wei, reflecting an active engagement in joint research projects.

Seung H. Kang's publications have appeared in multiple notable venues, such as:

  • SSRN Electronic Journal
  • IEEE Transactions on Circuits & Systems II Express Briefs
  • IEEE Electron Device Letters
  • IEEE Transactions on Information Forensics and Security
  • IEEE Transactions on Circuits and Systems I Regular Papers

Best Publications

  • 45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell

    C.J. Lin;S.H. Kang;Y.J. Wang;K. Lee

  • Magnetic tunnel junction device and fabrication

    Xia Li;Seung H. Kang;Xiaochun Zhu

  • Method of forming a magnetic tunnel junction structure

    Xia Li;Seung H. Kang;Xiaochun Zhu

  • Development of Embedded STT-MRAM for Mobile System-on-Chips

    Kangho Lee;Seung H Kang

  • Amorphous spacerlattice spacer for perpendicular MTJs

    Kangho Lee;Wei-Chuan Chen;Seung H. Kang

  • A Novel Sensing Circuit for Deep Submicron Spin Transfer Torque MRAM (STT-MRAM)

    Jisu Kim;Kyungho Ryu;S. H. Kang;Seong-Ook Jung

  • A 45nm 1Mb embedded STT-MRAM with design techniques to minimize read-disturbance

    Jung Pill Kim;Taehyun Kim;Wuyang Hao;Hari M. Rao

  • Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device

    Wei-Chuan Chen;Kangho Lee;Xiaochun Zhu;Seung H. Kang

  • A Study on Practically Unlimited Endurance of STT-MRAM

    Jimmy J. Kan;Chando Park;Chi Ching;Jaesoo Ahn

  • Spin-Transfer Switching Magnetic Element Utilizing a Composite Free Layer Comprising a Superparamagnetic Layer

    Wei-Chuan Chen;Seung H. Kang

  • Mtj structure and integration scheme

    Xia Li;Seung Hyuk Kang;Matthew Michael Nowak

  • Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices

    Kangho Lee;Jimmy Kan;Xiaochun Zhu;Matthias Georg Gottwald

  • One-Mask MTJ Integration for STT MRAM

    Seung H. Kang;David Bang;Kangho Lee

  • Method of fabricating a magnetic tunnel junction (MTJ) device with reduced switching current

    Xiaochun Zhu;Xia Li;Wei-Chuan Chen;Seung Hyuk Kang

  • STT-MRAM Sensing: A Review

    Taehui Na;Seung H. Kang;Seong-Ook Jung

  • Field-Based Capacitance Modeling for Sub-65-nm On-Chip Interconnect

    Wei Zhao;Xia Li;Sam Gu;S.H. Kang

  • Design Consideration of Magnetic Tunnel Junctions for Reliable High-Temperature Operation of STT-MRAM

    Kangho Lee;Seung H Kang

  • Invalid Write Prevention for STT-MRAM Array

    Kyungho Ryu;Jisu Kim;Seong-Ook Jung;Seung H. Kang

  • A Magnetic Tunnel Junction Based Zero Standby Leakage Current Retention Flip-Flop

    Kyungho Ryu;Jisu Kim;Jiwan Jung;Jung Pill Kim

  • Emerging materials and devices in spintronic integrated circuits for energy-smart mobile computing and connectivity

    S.H. Kang;K. Lee

  • Self-compensation of stray field of perpendicular magnetic elements

    Wei-Chuan Chen;Xiaochun Zhu;Xia Li;Yu Lu

Frequent Co-Authors

Yu Cao
Yu Cao University of Minnesota
Yuan Xie
Yuan Xie Hong Kong University of Science and Technology
Rashid Ahmed Akbar Attar
Rashid Ahmed Akbar Attar Qualcomm (United States)
Duygu Kuzum
Duygu Kuzum University of California, San Diego
Hai Li
Hai Li Duke University

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