World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
5524
World Ranking
4748
National Ranking
1664

Seung H. Kang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Seung H. Kang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 211 publications — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Seung H. Kang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Seung H. Kang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 39 D-Index — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Seung H. Kang is affiliated with Qualcomm in the United States and focuses primarily on research within engineering. Their work encompasses a broad range of topics in electrical and electronic engineering, with specific involvement in atomic and molecular physics and optics, biomedical engineering, electronic, optical and magnetic materials, and artificial intelligence.

Their research contributions address several key topics including:

  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Magnetic properties of thin films
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Advanced Sensor and Energy Harvesting Materials
  • Magnetic Properties and Applications

The following papers represent selected recent contributions, highlighting their involvement in memory technologies and circuit design:

  • "STT-MRAM Sensing: A Review," 2020, published in IEEE Transactions on Circuits & Systems II Express Briefs
  • "Performance Prospects of Deeply Scaled Spin-Transfer Torque Magnetic Random-Access Memory for In-Memory Computing," 2020, IEEE Electron Device Letters
  • "Environmental-Variation-Tolerant Magnetic Tunnel Junction-Based Physical Unclonable Function Cell With Auto Write-Back Technique," 2021, IEEE Transactions on Information Forensics and Security
  • "Self-Referenced Single-Ended Resistance Monitoring Write Termination Scheme for STT-RAM Write Energy Reduction," 2021, IEEE Transactions on Circuits and Systems I Regular Papers
  • "Distribution Analysis and Multiple-point Tail Fitting Yield Estimation Method for STT-MRAM," 2020, JSTS Journal of Semiconductor Technology and Science

The scientist has collaborated frequently with several co-authors including Seong-Ook Jung, Taehui Na, Byungkyu Song, Changyi Li, and Yuan Wei, reflecting an active engagement in joint research projects.

Seung H. Kang's publications have appeared in multiple notable venues, such as:

  • SSRN Electronic Journal
  • IEEE Transactions on Circuits & Systems II Express Briefs
  • IEEE Electron Device Letters
  • IEEE Transactions on Information Forensics and Security
  • IEEE Transactions on Circuits and Systems I Regular Papers

Best Publications

  • 45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell

    C.J. Lin;S.H. Kang;Y.J. Wang;K. Lee

  • Magnetic tunnel junction device and fabrication

    Xia Li;Seung H. Kang;Xiaochun Zhu

  • Method of forming a magnetic tunnel junction structure

    Xia Li;Seung H. Kang;Xiaochun Zhu

  • Development of Embedded STT-MRAM for Mobile System-on-Chips

    Kangho Lee;Seung H Kang

  • Amorphous spacerlattice spacer for perpendicular MTJs

    Kangho Lee;Wei-Chuan Chen;Seung H. Kang

  • A Novel Sensing Circuit for Deep Submicron Spin Transfer Torque MRAM (STT-MRAM)

    Jisu Kim;Kyungho Ryu;S. H. Kang;Seong-Ook Jung

  • A 45nm 1Mb embedded STT-MRAM with design techniques to minimize read-disturbance

    Jung Pill Kim;Taehyun Kim;Wuyang Hao;Hari M. Rao

  • Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device

    Wei-Chuan Chen;Kangho Lee;Xiaochun Zhu;Seung H. Kang

  • A Study on Practically Unlimited Endurance of STT-MRAM

    Jimmy J. Kan;Chando Park;Chi Ching;Jaesoo Ahn

  • Spin-Transfer Switching Magnetic Element Utilizing a Composite Free Layer Comprising a Superparamagnetic Layer

    Wei-Chuan Chen;Seung H. Kang

  • Mtj structure and integration scheme

    Xia Li;Seung Hyuk Kang;Matthew Michael Nowak

  • Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices

    Kangho Lee;Jimmy Kan;Xiaochun Zhu;Matthias Georg Gottwald

  • One-Mask MTJ Integration for STT MRAM

    Seung H. Kang;David Bang;Kangho Lee

  • Method of fabricating a magnetic tunnel junction (MTJ) device with reduced switching current

    Xiaochun Zhu;Xia Li;Wei-Chuan Chen;Seung Hyuk Kang

  • STT-MRAM Sensing: A Review

    Taehui Na;Seung H. Kang;Seong-Ook Jung

  • Field-Based Capacitance Modeling for Sub-65-nm On-Chip Interconnect

    Wei Zhao;Xia Li;Sam Gu;S.H. Kang

  • Design Consideration of Magnetic Tunnel Junctions for Reliable High-Temperature Operation of STT-MRAM

    Kangho Lee;Seung H Kang

  • Invalid Write Prevention for STT-MRAM Array

    Kyungho Ryu;Jisu Kim;Seong-Ook Jung;Seung H. Kang

  • A Magnetic Tunnel Junction Based Zero Standby Leakage Current Retention Flip-Flop

    Kyungho Ryu;Jisu Kim;Jiwan Jung;Jung Pill Kim

  • Emerging materials and devices in spintronic integrated circuits for energy-smart mobile computing and connectivity

    S.H. Kang;K. Lee

  • Self-compensation of stray field of perpendicular magnetic elements

    Wei-Chuan Chen;Xiaochun Zhu;Xia Li;Yu Lu

Frequent Co-Authors

Eric E. Fullerton
Eric E. Fullerton University of California, San Diego
Yu Cao
Yu Cao University of Minnesota
Yuan Xie
Yuan Xie Hong Kong University of Science and Technology
Rashid Ahmed Akbar Attar
Rashid Ahmed Akbar Attar Qualcomm (United States)
Duygu Kuzum
Duygu Kuzum University of California, San Diego
Hai Li
Hai Li Duke University

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