World's Best Scientists 2026 revealed!
Award Badge
Electronics and Electrical Engineering
Korea
2025

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
77
Citations
27363
World Ranking
598
National Ranking
11

Research.com Recognitions

  • 2025 - Research.com Electronics and Electrical Engineering in Korea Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in Korea Leader Award
  • 2012 - Member of the National Academy of Engineering For contributions to semiconductor technologies for DRAM and nonvolatile memories.

Overview

Kinam Kim is affiliated with Samsung in South Korea and has an extensive research portfolio primarily in the field of engineering, with a specific focus on electrical and electronic engineering. Their work spans several subfields including computer vision and pattern recognition, cellular and molecular neuroscience, cell biology, and computer networks and communications.

Their research covers a range of topics such as advanced memory and neural computing, semiconductor materials and devices, ferroelectric and negative capacitance devices, neuroscience and neural engineering, photoreceptor and optogenetics research, 3D integrated circuits and through-silicon via technologies, as well as interconnection networks and systems.

Among recent publications, Kinam Kim has contributed the following papers:

  • The Smallest Engine Transforming Humanity: The Past, Present, and Future (2021, 2021 IEEE International Electron Devices Meeting)

In addition to these, other notable papers in their research network include:

  • Neuromorphic electronics based on copying and pasting the brain (2021, Nature Electronics)
  • Intravenous allogeneic umbilical cord blood-derived mesenchymal stem cell therapy in recessive dystrophic epidermolysis bullosa patients (2021, JCI Insight)
  • Evaluation of Time-Based Arc Flash Detection with Non-contact UV Sensor (2023, Journal of Electrical Engineering and Technology)
  • Characterization of ZnO Thin-film Transistors with Various Active Layer Structures after Exposure to Different Proton Energies (2024, JSTS Journal of Semiconductor Technology and Science)

Frequent collaborators in Kinam Kim's research include Junha Hyung, Jaegul Choo, Donhee Ham, Hongkun Park, and Sungwoo Hwang.

The scientist's work is commonly published in venues such as the 2021 IEEE International Electron Devices Meeting (IEDM), arXiv (Cornell University), Nature Electronics, JCI Insight, and the Journal of Electrical Engineering and Technology.

Kinam Kim was elected a member of the National Academy of Engineering in 2012 for contributions to semiconductor technologies specifically related to DRAM and nonvolatile memories.

Best Publications

  • A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

    Myoung-Jae Lee;Chang Bum Lee;Dongsoo Lee;Seung Ryul Lee

  • High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

    Sunkook Kim;Sunkook Kim;Aniruddha Konar;Wan-Sik Hwang;Jong Hak Lee

  • Full-colour quantum dot displays fabricated by transfer printing

    Tae Ho Kim;Kyung Sang Cho;Eun Kyung Lee;Sang Jin Lee

  • Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

    Heejun Yang;Jinseong Heo;Seongjun Park;Hyun Jae Song

  • Highly stretchable electric circuits from a composite material of silver nanoparticles and elastomeric fibres

    Minwoo Park;Jungkyun Im;Minkwan Shin;Yuho Min

  • A role for graphene in silicon-based semiconductor devices

    Kinam Kim;Jae-Young Choi;Taek Kim;Seong-Ho Cho

  • Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

    Sanghun Jeon;Seung-Eon Ahn;Ihun Song;Chang Jung Kim

  • Porous PVDF as effective sonic wave driven nanogenerators.

    SeungNam Cha;Seong Min Kim;HyunJin Kim;JiYeon Ku

  • In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

    Gyeong-Su Park;Young Bae Kim;Seong Yong Park;Xiang Shu Li

  • A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

    Kwang-Jin Lee;Beak-Hyung Cho;Woo-Yeong Cho;Sangbeom Kang

  • A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

    Kwang-Jin Lee;Beak-Hyung Cho;Woo-Yeong Cho;Sangbeom Kang

  • 19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming

    Ki-Tae Park;Jin-man Han;Daehan Kim;Sangwan Nam

  • Full integration and reliability evaluation of phase-change RAM based on 0.24 /spl mu/m-CMOS technologies

    Y.N. Hwang;J.S. Hong;S.H. Lee;S.J. Ahn

  • Highly manufacturable high density phase change memory of 64Mb and beyond

    S.J. Ahn;Y.J. Song;C.W. Jeong;J.M. Shin

  • Highly reliable 50nm contact cell technology for 256Mb PRAM

    S.J. Ahn;Y.N. Hwang;Y.J. Song;S.H. Lee

  • Three Dimensionally Stacked NAND Flash Memory Technology Using Stacking Single Crystal Si Layers on ILD and TANOS Structure for Beyond 30nm Node

    Soon-Moon Jung;Jaehoon Jang;Wonseok Cho;Hoosung Cho

  • Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

    J.H. Oh;J.H. Park;Y.S. Lim;H.S. Lim

  • A novel SONOS structure of SiO/sub 2//SiN/Al/sub 2/O/sub 3/ with TaN metal gate for multi-giga bit flash memories

    Chang Hyun Lee;Kyung In Choi;Myoung Kwan Cho;Yun Heub Song

  • Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory

    Chang-Hyun Lee;Sung-Hoi Hur;You-Cheol Shin;Jeong-Hyuk Choi

  • Technology for sub-50nm DRAM and NAND flash manufacturing

    Kinam Kim

Frequent Co-Authors

U-In Chung
U-In Chung Samsung (South Korea)
Ki-Tae Park
Ki-Tae Park Samsung (South Korea)
Dong-Won Kim
Dong-Won Kim Hanyang University
Jae-Hoon Jang
Jae-Hoon Jang Samsung (South Korea)
Sanghun Jeon
Sanghun Jeon Korea Advanced Institute of Science and Technology
Jong Min Kim
Jong Min Kim University of Cambridge

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

Pursuing a degree in Electronics and Electrical Engineering opens various career doors, but students may also consider complementary fields to enhance their prospects. For example, many introverts thrive in technical roles requiring deep focus. Exploring introvert jobs that pay well can help identify well-suited engineering niches or hybrid roles.

Additionally, project management skills are increasingly valuable in engineering projects. Accelerated online options make it possible to earn credentials quickly while working. Consider programs like an accelerated online project management degree to build leadership and organizational expertise alongside technical knowledge.

For those interested in formalizing project management, an affordable bachelor's in project management can provide a solid foundation. Many of these programs are designed with flexibility in mind, catering to professionals balancing work and study.

Speaking of flexibility, online degree programs for working adults offer accelerated paths that accommodate busy schedules. This approach allows students to gain relevant skills without pausing their careers, making it an ideal option for advancing in engineering or branching into management roles.

Best Scientists Citing Kinam Kim

Trending Scientists