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Electronics and Electrical Engineering
Korea
2025

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 77 598 573 11 11 502 27363

Kinam Kim publications per year

The chart shows the history of publications by Kinam Kim between 1992 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Kinam Kim published across 34 years, from 1992 to 2025, averaging 15.5 papers a year. Output peaked at 74 publications in 2004. 9 of the 527 publications appeared in the last two years.

No. of publications
20 40 60
Bar chart. Horizontal axis: year, 1992 to 2025. Vertical axis: number of publications, 0 to 74. Peak 74 publications in 2004. 1992: 1 publication 1993: 2 publications 1994: 1 publication 1995: 5 publications 1996: 3 publications 1997: 5 publications 1998: 6 publications 1999: 30 publications 2000: 11 publications 2001: 20 publications 2002: 39 publications 2003: 39 publications 2004: 74 publications 2005: 54 publications 2006: 47 publications 2007: 46 publications 2008: 29 publications 2009: 14 publications 2010: 19 publications 2011: 20 publications 2012: 23 publications 2013: 15 publications 2014: 5 publications 2015: 2 publications 2016: 4 publications 2017: 1 publication 2018: 0 publications 2019: 1 publication 2020: 0 publications 2021: 1 publication 2022: 0 publications 2023: 1 publication 2024: 4 publications 2025: 5 publications
1992 2025

527 publications in total across all disciplines

View publications per year as a table
Kinam Kim: publications per year, 1992 to 2025
Year Publications
1992 1
1993 2
1994 1
1995 5
1996 3
1997 5
1998 6
1999 30
2000 11
2001 20
2002 39
2003 39
2004 74
2005 54
2006 47
2007 46
2008 29
2009 14
2010 19
2011 20
2012 23
2013 15
2014 5
2015 2
2016 4
2017 1
2018 0
2019 1
2020 0
2021 1
2022 0
2023 1
2024 4
2025 5
Total 527
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Kinam Kim publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Kinam Kim sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 494–513 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 502 publications — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103 502
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Kinam Kim D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Kinam Kim sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 77 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 77 D-Index — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35 77
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Research.com Recognitions

  • 2025 - Research.com Electronics and Electrical Engineering in Korea Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in Korea Leader Award
  • 2012 - Member of the National Academy of Engineering For contributions to semiconductor technologies for DRAM and nonvolatile memories.

Overview

Kinam Kim is affiliated with Samsung in South Korea and has an extensive research portfolio primarily in the field of engineering, with a specific focus on electrical and electronic engineering. Their work spans several subfields including computer vision and pattern recognition, cellular and molecular neuroscience, cell biology, and computer networks and communications.

Their research covers a range of topics such as advanced memory and neural computing, semiconductor materials and devices, ferroelectric and negative capacitance devices, neuroscience and neural engineering, photoreceptor and optogenetics research, 3D integrated circuits and through-silicon via technologies, as well as interconnection networks and systems.

Among recent publications, Kinam Kim has contributed the following papers:

  • The Smallest Engine Transforming Humanity: The Past, Present, and Future (2021, 2021 IEEE International Electron Devices Meeting)

In addition to these, other notable papers in their research network include:

  • Neuromorphic electronics based on copying and pasting the brain (2021, Nature Electronics)
  • Intravenous allogeneic umbilical cord blood-derived mesenchymal stem cell therapy in recessive dystrophic epidermolysis bullosa patients (2021, JCI Insight)
  • Evaluation of Time-Based Arc Flash Detection with Non-contact UV Sensor (2023, Journal of Electrical Engineering and Technology)
  • Characterization of ZnO Thin-film Transistors with Various Active Layer Structures after Exposure to Different Proton Energies (2024, JSTS Journal of Semiconductor Technology and Science)

Frequent collaborators in Kinam Kim's research include Junha Hyung, Jaegul Choo, Donhee Ham, Hongkun Park, and Sungwoo Hwang.

The scientist's work is commonly published in venues such as the 2021 IEEE International Electron Devices Meeting (IEDM), arXiv (Cornell University), Nature Electronics, JCI Insight, and the Journal of Electrical Engineering and Technology.

Kinam Kim was elected a member of the National Academy of Engineering in 2012 for contributions to semiconductor technologies specifically related to DRAM and nonvolatile memories.

Best Publications

  • A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

    Myoung-Jae Lee;Chang Bum Lee;Dongsoo Lee;Seung Ryul Lee

  • High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

    Sunkook Kim;Sunkook Kim;Aniruddha Konar;Wan-Sik Hwang;Jong Hak Lee

  • Full-colour quantum dot displays fabricated by transfer printing

    Tae Ho Kim;Kyung Sang Cho;Eun Kyung Lee;Sang Jin Lee

  • Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

    Heejun Yang;Jinseong Heo;Seongjun Park;Hyun Jae Song

  • Highly stretchable electric circuits from a composite material of silver nanoparticles and elastomeric fibres

    Minwoo Park;Jungkyun Im;Minkwan Shin;Yuho Min

  • A role for graphene in silicon-based semiconductor devices

    Kinam Kim;Jae-Young Choi;Taek Kim;Seong-Ho Cho

  • Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

    Sanghun Jeon;Seung-Eon Ahn;Ihun Song;Chang Jung Kim

  • Porous PVDF as effective sonic wave driven nanogenerators.

    SeungNam Cha;Seong Min Kim;HyunJin Kim;JiYeon Ku

  • In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

    Gyeong-Su Park;Young Bae Kim;Seong Yong Park;Xiang Shu Li

  • A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

    Kwang-Jin Lee;Beak-Hyung Cho;Woo-Yeong Cho;Sangbeom Kang

  • A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

    Kwang-Jin Lee;Beak-Hyung Cho;Woo-Yeong Cho;Sangbeom Kang

  • 19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming

    Ki-Tae Park;Jin-man Han;Daehan Kim;Sangwan Nam

  • Full integration and reliability evaluation of phase-change RAM based on 0.24 /spl mu/m-CMOS technologies

    Y.N. Hwang;J.S. Hong;S.H. Lee;S.J. Ahn

  • Highly manufacturable high density phase change memory of 64Mb and beyond

    S.J. Ahn;Y.J. Song;C.W. Jeong;J.M. Shin

  • Highly reliable 50nm contact cell technology for 256Mb PRAM

    S.J. Ahn;Y.N. Hwang;Y.J. Song;S.H. Lee

  • Three Dimensionally Stacked NAND Flash Memory Technology Using Stacking Single Crystal Si Layers on ILD and TANOS Structure for Beyond 30nm Node

    Soon-Moon Jung;Jaehoon Jang;Wonseok Cho;Hoosung Cho

  • Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

    J.H. Oh;J.H. Park;Y.S. Lim;H.S. Lim

  • A novel SONOS structure of SiO/sub 2//SiN/Al/sub 2/O/sub 3/ with TaN metal gate for multi-giga bit flash memories

    Chang Hyun Lee;Kyung In Choi;Myoung Kwan Cho;Yun Heub Song

  • Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory

    Chang-Hyun Lee;Sung-Hoi Hur;You-Cheol Shin;Jeong-Hyuk Choi

  • Technology for sub-50nm DRAM and NAND flash manufacturing

    Kinam Kim

Frequent Co-Authors

U-In Chung
U-In Chung Samsung (South Korea)
Ki-Tae Park
Ki-Tae Park Samsung (South Korea)
Dong-Won Kim
Dong-Won Kim Hanyang University
Jae-Hoon Jang
Jae-Hoon Jang Samsung (South Korea)
Sanghun Jeon
Sanghun Jeon Korea Advanced Institute of Science and Technology
Jong Min Kim
Jong Min Kim University of Cambridge

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