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Jung-Dal Choi

Jung-Dal Choi

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
5561
World Ranking
5144
National Ranking
178

Jung-Dal Choi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jung-Dal Choi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 180 publications — 23rd percentile

23% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Jung-Dal Choi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jung-Dal Choi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Jung-Dal Choi is a researcher affiliated with SK Hynix in South Korea, contributing to fields intersecting computer science, engineering, and physics and astronomy. Their work encompasses subfields such as computer networks and communications, electrical and electronic engineering, and atomic and molecular physics and optics.

Their research primarily focuses on advanced data storage technologies, semiconductor materials and devices, and the magnetic properties of thin films. These thematic concentrations reflect a multidisciplinary approach to the study and development of modern electronic and memory systems.

Among the published works credited to Jung-Dal Choi is the 2022 paper titled A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density, presented at the 2022 IEEE International Solid-State Circuits Conference (ISSCC). This publication addresses improvements in memory density and latency within the context of next-generation NAND flash memory design.

Frequent coauthors collaborating with Jung-Dal Choi include:

  • Wanik Cho
  • Jongseok Jung
  • Jongwoo Kim
  • Junghoon Ham
  • Sang-Kyu Lee

Jung-Dal Choi's presence in scholarly venues is noted notably in the IEEE International Solid-State Circuits Conference (ISSCC), where their contributions are situated within a broader professional dialogue on semiconductor and circuit advances.

The scope of Jung-Dal Choi's research activity is evident through an integrated focus on device-level innovations and fundamental material properties, contributing to evolving technology in the semiconductor industry and data storage fields. This profile illustrates an active engagement across multiple scientific and engineering disciplines, pertinent to advancements in electronic component design and performance.

Best Publications

  • Effects of floating-gate interference on NAND flash memory cell operation

    Jae-Duk Lee;Sung-Hoi Hur;Jung-Dal Choi

  • Three-dimensional semiconductor memory device

    Sunil Shim;Jang-Gn Yun;Jeonghyuk Choi;Kwang Soo Seol

  • Methods of fabricating floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers

    Chang-Hyun Lee;Jung-Dal Choi;Byoung-Woo Ye

  • High-density low-power-operating DRAM device adopting 6F/sup 2/ cell scheme with novel S-RCAT structure on 80nm feature size and beyond

    H.J. Oh;J.Y. Kim;J.H. Kim;S.G. Park

  • A 3.3 V 1 Gb multi-level NAND flash memory with non-uniform threshold voltage distribution

    Taehee Cho;Young-Taek Lee;Euncheol Kim;Jinwook Lee

  • A dual-mode NAND flash memory: 1-Gb multilevel and high-performance 512-Mb single-level modes

    Taehee Cho;Yeong-Taek Lee;Eun-Cheol Kim;Jin-Wook Lee

  • Non-volatile semiconductor memory devices

    Chang-Hyun Lee;Jung-Dal Choi;Byoung-Woo Ye

  • A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM)

    Seong-Geon Park;Min Kyu Yang;Hyunsu Ju;Dong-Jun Seong

  • Non-volatile memory devices and methods of operating the same

    Chang-Hyun Lee;Jung-Dal Choi

  • The non-volatile memory device with NAND cell structure includes plural memory cell serials, BLs & selective transistors at 1st & 2nd memory cell serials are separately serial with BL contact & 2 ends of memory cell.

    Choi Jung-Dal;Kim Dong-Jun;Shin Wang-Chul;Kim Jong-Han

  • Future Outlook of NAND Flash Technology for 40nm Node and Beyond

    Kinam Kim;Jungdal Choi

  • Highly Manufacturable 32Gb Multi -- Level NAND Flash Memory with 0.0098 μm 2 Cell Size using TANOS(Si - Oxide - Al2O3 - TaN) Cell Technology

    Youngwoo Park;Jungdal Choi;Changseok Kang;Changhyun Lee

  • Non-volatile memory device and method for fabricating the same

    Chang-Hyun Lee;Jung-Dal Choi;Byung-Kwan You;Sung-Hoi Hur

  • A novel NAND-type MONOS memory using 63nm process technology for multi-gigabit flash EEPROMs

    Yoocheol Shin;Jungdal Choi;Changseok Kang;Changhyun Lee

  • 3D approaches for non-volatile memory

    Jungdal Choi;Kwang Soo Seol

  • 8 Gb MLC (multi-level cell) NAND flash memory using 63 nm process technology

    Jong-Ho Park;Sung-Hoi Hur;Joon-Hee Leex;Jin-Taek Park

  • Method of forming non-volatile memory having floating trap type device

    Chang-Hyun Lee;Jung-Dal Choi;Sung-Hoi Hur

  • Semiconductor device having fin-type field effect transistor and method of manufacturing the same

    Sung Gi Hur;TaeYong Kwon;Sangsu Kim;Jungdal Choi

  • Nonvolatile memory device with NAND cell strings

    Ki-tae Park;Jung-Dal Choi

  • Non-Volatile Memory Devices

    Hyun Suk Kim;Sun-II Shim;Chang-seok Kang;Won-Cheol Jeong

Frequent Co-Authors

Kinam Kim
Kinam Kim Samsung (South Korea)
Ki-Tae Park
Ki-Tae Park Samsung (South Korea)
Sanghun Jeon
Sanghun Jeon Korea Advanced Institute of Science and Technology
Jang-Sik Lee
Jang-Sik Lee Pohang University of Science and Technology
Jae-Hoon Jang
Jae-Hoon Jang Samsung (South Korea)
Ki-Hyun Kim
Ki-Hyun Kim Hanyang University
Byung-Gook Park
Byung-Gook Park Seoul National University
JongWon Kim
JongWon Kim Gwangju Institute of Science and Technology
Seung-nam Cha
Seung-nam Cha University of Oxford

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