World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
31
Citations
3807
World Ranking
6598
National Ranking
2155

Best Publications

  • Programming based on behavior of nonvolatile memory

    Jian Chen;Daniel C Guterman;Yan Li;Jeffrey W Lutze

  • Nand non-volatile storage device and methods of using and making the same

    Mokhlesi Nima;Lutze Jeffrey W

  • Alternate sensing techniques for non-volatile memories

    Nima Mokhlesi;Jeffrey W. Lutze

  • System for programming non-volatile memory with self-adjusting maximum program loop

    Jun Wan;Jeffrey W. Lutze

  • Pillar cell flash memory technology

    Nima Mokhlesi;Jeffrey W. Lutze

  • A 56-nm CMOS 99- ${\hbox {mm}}^{2} $ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput

    K. Takeuchi;Y. Kameda;S. Fujimura;H. Otake

  • Non-volatile memory using multiple boosting modes for reduced program disturb

    Jeffrey W. Lutze;Yingda Dong

  • Non-volatile storage system, method for operation the same and flash memory system

    Lutze Jeffrey

  • WORD LINE CORRECTION IN NONVOLATILE MEMORY ERASURE OPERATION

    Wan Jun;Lutze Jeffrey W;Pang Chan-Sui

  • Method for forming non-volatile memory with shield plate for limiting cross coupling between floating gates

    Jeffrey W. Lutze;Nima Mokhlesi

  • Trimming of analog voltages in flash memory devices

    Loc Tu;Jeffrey Lutze;Jun Wan;Jian Chen

  • Reducing read disturb for non-volatile storage

    Yupin Fong;Jun Wan;Jeffrey Lutze

  • A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput

    K. Takeuchi;Y. Kameda;S. Fujimura;H. Otake

  • A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology

    Raul-Adrian Cernea;Long Pham;Farookh Moogat;Siu Chan

  • Selective use of programming inhibit scheme for nonvolatile memory

    Jian Chen;Geoffrey S Gongwer;Gerrit Jan Hemink;Masaaki Higashiya

  • Programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data

    Yingda Dong;Jeffrey W. Lutze;Dana Lee;Gerrit Jan Hemink

  • Non-volatile memory cells shaped to increase coupling to word lines

    Jeffrey W. Lutze;Tuan Pham;Masaaki Higashitani

  • Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages

    Gerrit Jan Hemink;Yingda Dong;Jeffrey W. Lutze;Dana Lee

  • Detecting over programmed memory cells after programming of adjacent memory cells

    Jian San Jose Chen;Yan Milpitas Li;Jeffrey W. San Jose Lutze

  • Apparatus for controlled programming of non-volatile memory exhibiting bit line coupling

    Jeffrey W. Lutze;Yan Li;Siu L. Chan

Frequent Co-Authors

Nima Mokhlesi
Nima Mokhlesi Western Digital (United States)

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Best Scientists Citing Jeffrey W. Lutze

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