Jeffrey W. Lutze

Jeffrey W. Lutze publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jeffrey W. Lutze sits on this spectrum.

Jeffrey W. Lutze D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jeffrey W. Lutze sits on this spectrum.

Best Publications

• Programming based on behavior of nonvolatile memory

  Jian Chen;Daniel C Guterman;Yan Li;Jeffrey W Lutze

  438
  Citations

• Nand non-volatile storage device and methods of using and making the same

  Mokhlesi Nima;Lutze Jeffrey W

  302
  Citations

• Alternate sensing techniques for non-volatile memories

  Nima Mokhlesi;Jeffrey W. Lutze

  202
  Citations

• System for programming non-volatile memory with self-adjusting maximum program loop

  Jun Wan;Jeffrey W. Lutze

  187
  Citations

• Pillar cell flash memory technology

  Nima Mokhlesi;Jeffrey W. Lutze

  171
  Citations

• A 56-nm CMOS 99- ${\hbox {mm}}^{2} $ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput

  K. Takeuchi;Y. Kameda;S. Fujimura;H. Otake

  153
  Citations

• Non-volatile memory using multiple boosting modes for reduced program disturb

  Jeffrey W. Lutze;Yingda Dong

  145
  Citations

• Non-volatile storage system, method for operation the same and flash memory system

  Lutze Jeffrey

  115
  Citations

• WORD LINE CORRECTION IN NONVOLATILE MEMORY ERASURE OPERATION

  Wan Jun;Lutze Jeffrey W;Pang Chan-Sui

  97
  Citations

• Method for forming non-volatile memory with shield plate for limiting cross coupling between floating gates

  Jeffrey W. Lutze;Nima Mokhlesi

  95
  Citations

• Trimming of analog voltages in flash memory devices

  Loc Tu;Jeffrey Lutze;Jun Wan;Jian Chen

  94
  Citations

• Reducing read disturb for non-volatile storage

  Yupin Fong;Jun Wan;Jeffrey Lutze

  89
  Citations

• A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput

  K. Takeuchi;Y. Kameda;S. Fujimura;H. Otake

  85
  Citations

• A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology

  Raul-Adrian Cernea;Long Pham;Farookh Moogat;Siu Chan

  83
  Citations

• Selective use of programming inhibit scheme for nonvolatile memory

  Jian Chen;Geoffrey S Gongwer;Gerrit Jan Hemink;Masaaki Higashiya

  79
  Citations

• Programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data

  Yingda Dong;Jeffrey W. Lutze;Dana Lee;Gerrit Jan Hemink

  75
  Citations

• Non-volatile memory cells shaped to increase coupling to word lines

  Jeffrey W. Lutze;Tuan Pham;Masaaki Higashitani

  74
  Citations

• Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages

  Gerrit Jan Hemink;Yingda Dong;Jeffrey W. Lutze;Dana Lee

  65
  Citations

• Detecting over programmed memory cells after programming of adjacent memory cells

  Jian San Jose Chen;Yan Milpitas Li;Jeffrey W. San Jose Lutze

  64
  Citations

• Apparatus for controlled programming of non-volatile memory exhibiting bit line coupling

  Jeffrey W. Lutze;Yan Li;Siu L. Chan

  58
  Citations