World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
5912
World Ranking
5502
National Ranking
190

Jae-Hoon Jang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jae-Hoon Jang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 89 publications — 2nd percentile

2% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Jae-Hoon Jang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jae-Hoon Jang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 35 D-Index — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Jae-Hoon Jang is affiliated with Samsung in South Korea. Their professional activities are centered within this national context.

There are no recorded publications, including recent papers or book contributions attributed to Jae-Hoon Jang publicly available in the current dataset.

No information on co-authors or frequent collaborators has been identified for Jae-Hoon Jang.

Details on the scientist's primary and secondary fields of study have not been provided, nor have the main research topics associated with their work.

Similarly, there is no information about any awards or honors received by Jae-Hoon Jang.

Best Publications

  • Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NAND flash memory

    Jaehoon Jang;Han-Soo Kim;Wonseok Cho;Hoosung Cho

  • Three-dimensional semiconductor memory device

    Sunil Shim;Jang-Gn Yun;Jeonghyuk Choi;Kwang Soo Seol

  • 19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming

    Ki-Tae Park;Jin-man Han;Daehan Kim;Sangwan Nam

  • Three Dimensionally Stacked NAND Flash Memory Technology Using Stacking Single Crystal Si Layers on ILD and TANOS Structure for Beyond 30nm Node

    Soon-Moon Jung;Jaehoon Jang;Wonseok Cho;Hoosung Cho

  • Non-volatile memory device having vertical structure and method of operating the same

    Jae-Hun Jeong;Han-soo Kim;Won-Seok Cho;Jae-Hoon Jang

  • Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings therein

    Changhyun Lee;Sunhil Shim;Jaehoon Jang;Sunghoi Hur

  • Nonvolatile memory devices, operating methods thereof and memory systems including the same

    Sun-Il Shim;Jae-Hoon Jang;Donghyuk Chae;Youngho Lim

  • METHOD FOR MANUFACTURING THREE DIMENSIONAL SEMICONDUCTOR DEVICE AND THREE DIMENSIONAL SEMICONDUCTOR DEVICE MANUFACTURED BY THE METHOD

    Hwang Sung Min;Kim Han Soo;Cho Won Seok;Jang Jae Hoon

  • The revolutionary and truly 3-dimensional 25F/sup 2/ SRAM technology with the smallest S/sup 3/ ( stacked single-crystal Si) cell, 0.16um/sup 2/, and SSTFT (atacked single-crystal thin film transistor) for ultra high density SRAM

    Soon-Moon Jung;Jaehoon Jang;Wonseok Cho;Jaehwan Moon

  • Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristics

    Sunil Shim;Jaehun Jeong;Hansoo Kim;Sunghoi Hur

  • Three-dimensional semiconductor memory device and a method of fabricating the same

    Sunil Shim;Jaehoon Jang;Hansoo Kim;Sungmin Hwang

  • Stacked memory and method for forming the same

    Young-Chul Jang;Won-Seok Cho;Jae-Hoon Jang;Soon-Moon Jung

  • Semiconductor memory device and programming method thereof

    Jae Hoon Jang;Jung Dal Choi

  • 7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate

    Jae-Woo Im;Woo-Pyo Jeong;Doo-Hyun Kim;Sang-Wan Nam

  • Three-Dimensional Nonvolatile Memory Devices Having Sub-Divided Active Bars and Methods of Manufacturing Such Devices

    Jin-Yong Oh;Woonkyung Lee;Jin-Sung Lee;Sunil Shim

  • NON-VOLATILE MEMORY DEVICE AND OPERATION METHOD OF THE SAME

    Jeong Jae Hun;Jung Soon Moon;Kim Han Soo;Jang Jae Hoon

  • Highly area efficient and cost effective double stacked S/sup 3/ (stacked single-crystal Si) peripheral CMOS SSTFT and SRAM cell technology for 512M bit density SRAM

    Soon-Moon Jung;Hoon Lim;Wonseok Cho;Hoosung Cho

  • Highly cost effective and high performance 65nm S/sup 3/ (stacked single-crystal Si) SRAM technology with 25F/sup 2/, 0.16um/sup 2/ cell and doubly stacked SSTFT cell transistors for ultra high density and high speed applications

    Soon-Moon Jung;Youngseop Rah;Taehong Ha;Hanbyung Park

  • A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate

    Woopyo Jeong;Jae-woo Im;Doo-Hyun Kim;Sang-Wan Nam

  • Methods of Forming SRAM Devices having Buried Layer Patterns

    Jae-Hoon Jang;Soon-Moon Jung;Young-Seop Rah;Han-Byung Park

Frequent Co-Authors

Kinam Kim
Kinam Kim Samsung (South Korea)
Ki-Hyun Kim
Ki-Hyun Kim Hanyang University
Ki-Tae Park
Ki-Tae Park Samsung (South Korea)
U-In Chung
U-In Chung Samsung (South Korea)
Hyoungsub Kim
Hyoungsub Kim Sungkyunkwan University

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