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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
51
Citations
9453
World Ranking
2691
National Ranking
36

Overview

Chih-Yuan Lu is affiliated with Macronix International in Taiwan, contributing extensively to the field of electrical and electronic engineering. Their research spans engineering and computer science, with a particular focus on semiconductor materials and devices as well as advanced memory and neural computing.

The scientist's scholarly work has been published primarily in the following venues:

  • IEEE Transactions on Electron Devices
  • 2022 International Electron Devices Meeting (IEDM)
  • Japanese Journal of Applied Physics
  • Solid-State Electronics

They have authored papers related to semiconductor devices, nonvolatile memory, and computing-in-memory systems. Notable publications include:

  • "ReRAM-Based Pseudo-True Random Number Generator With High Throughput and Unpredictability Characteristics," 2021, IEEE Transactions on Electron Devices
  • "A 3D Stackable DRAM: Capacitor-less Three-Wordline Gate-Controlled Thyristor (GCT) RAM with >40 μA Current Sensing Window, >1010 Endurance, and 3-second Retention at Room Temperature," 2022, 2022 International Electron Devices Meeting (IEDM)
  • "A Comprehensive Study of Double-Density Hemi-Cylindrical (HC) 3-D NAND Flash," 2020, IEEE Transactions on Electron Devices
  • "An Analog In-Memory-Search Solution based on 3D-NAND Flash Memory for Brain-Inspired Computing," 2022, 2022 International Electron Devices Meeting (IEDM)
  • "Impacts and solutions of nonvolatile-memory-induced weight error in the computing-in-memory neural network system," 2020, Japanese Journal of Applied Physics

Frequent collaborators include Keh-Chung Wang, Ming-Hsiu Lee, Yu-Hsuan Lin, Po-Hao Tseng, and Hsiang-Lan Lung.

Areas of specialization cover the following main topics:

  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Physical Unclonable Functions (PUFs) and Hardware Security
  • Chaos-based Image/Signal Encryption
  • Cryptographic Implementations and Security
  • Advancements in Semiconductor Devices and Circuit Design

Subfields of study include electrical and electronic engineering, hardware and architecture, computer vision and pattern recognition, artificial intelligence, and materials chemistry.

Best Publications

  • Modeling and optimization of monolithic polycrystalline silicon resistors

    N.C.-C. Lu;L. Gerzberg;Chih-Yuan Lu;J.D. Meindl

  • A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device

    Hang-Ting Lue;Tzu-Hsuan Hsu;Yi-Hsuan Hsiao;S. P. Hong

  • Method of fabricating a buried reservoir capacitor structure for high-density dynamic random access memory (DRAM) circuits

    Chih-Yuan Lu;Janmye Sung

  • SEMICONDUCTOR CON AISLAMIENTO DE SURCOS LLENADOS POR FLUJO.

    Lee Kuo-Hua;Lu Chih-Yuan

  • Data retention behavior of a SONOS type two-bit storage flash memory cell

    W.J. Tsai;N.K. Zous;C.J. Liu;C.C. Liu

  • Future challenges of flash memory technologies

    Chih-Yuan Lu;Kuang-Yeu Hsieh;Rich Liu

  • Laser programmable electrically readable phase-change memory method and device

    Chih-Yuan Lu;Yi-Chou Chen

  • BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability

    Hang-Ting Lue;Szu-Yu Wang;Erh-Kun Lai;Yen-Hao Shih

  • High performance 22/20nm FinFET CMOS devices with advanced high-K/metal gate scheme

    C.C. Wu;D.W. Lin;A. Keshavarzi;C.H. Huang

  • A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

    Erh-Kun Lai;Hang-Ting Lue;Yi-Hsuan Hsiao;Jung-Yu Hsieh

  • Vertical DRAM cross point memory cell and fabrication method

    Chih-Yuan Lu

  • Design for high density memory with relaxed metal pitch

    Howard C. Kirsch;Chih-Yuan Lu

  • An access-transistor-free (0T/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device

    Yi-Chou Chen;C.F. Chen;C.T. Chen;J.Y. Yu

  • Method for manufacturing a multiple-bit-per-cell memory

    Chih Chieh Yeh;Han Chao Lai;Wen Jer Tsai;Tao Cheng Lu

  • Method for fabricating a DRAM cell structure on an SOI wafer incorporating a two dimensional trench capacitor

    Min-Hwa Chi;Chih-Yuan Lu

  • A conduction model for semiconductor-grain-boundary-semiconductor barriers in polycrystalline-silicon films

    N.C.-C. Lu;L. Gerzberg;Chih-Yuan Lu;J.D. Meindl

  • PHINES: a novel low power program/erase, small pitch, 2-bit per cell flash memory

    C.C. Yeh;W.J. Tsai;M.I. Liu;T.C. Lu

  • Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM

    W.C. Chien;Y.C. Chen;E.K. Lai;Y.D. Yao

  • Cause of data retention loss in a nitride-based localized trapping storage flash memory cell

    W.J. Tsai;S.H. Gu;N.K. Zous;C.C. Yeh

  • Study of sub-30nm thin film transistor (TFT) charge-trapping (CT) devices for 3D NAND flash application

    Tzu-Hsuan Hsu;Hang-Ting Lue;Chih-Chang Hsieh;Erh-Kun Lai

Frequent Co-Authors

Hang-Ting Lue
Hang-Ting Lue Macronix International (Taiwan)
Ya-Chin King
Ya-Chin King National Tsing Hua University
Hsiang-Lan Lung
Hsiang-Lan Lung Macronix International (Taiwan)
Yao-Wen Chang
Yao-Wen Chang National Taiwan University
Tseung-Yuen Tseng
Tseung-Yuen Tseng National Yang Ming Chiao Tung University
Tuo-Hung Hou
Tuo-Hung Hou National Yang Ming Chiao Tung University
Erh-Kun Lai
Erh-Kun Lai Macronix International (Taiwan)
Meng-Fan Chang
Meng-Fan Chang National Tsing Hua University

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