World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
51
Citations
9453
World Ranking
2691
National Ranking
36

Chih-Yuan Lu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Chih-Yuan Lu sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 462 publications — 81st percentile

81% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Chih-Yuan Lu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Chih-Yuan Lu sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 51 D-Index — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Chih-Yuan Lu is affiliated with Macronix International in Taiwan, contributing extensively to the field of electrical and electronic engineering. Their research spans engineering and computer science, with a particular focus on semiconductor materials and devices as well as advanced memory and neural computing.

The scientist's scholarly work has been published primarily in the following venues:

  • IEEE Transactions on Electron Devices
  • 2022 International Electron Devices Meeting (IEDM)
  • Japanese Journal of Applied Physics
  • Solid-State Electronics

They have authored papers related to semiconductor devices, nonvolatile memory, and computing-in-memory systems. Notable publications include:

  • "ReRAM-Based Pseudo-True Random Number Generator With High Throughput and Unpredictability Characteristics," 2021, IEEE Transactions on Electron Devices
  • "A 3D Stackable DRAM: Capacitor-less Three-Wordline Gate-Controlled Thyristor (GCT) RAM with >40 μA Current Sensing Window, >1010 Endurance, and 3-second Retention at Room Temperature," 2022, 2022 International Electron Devices Meeting (IEDM)
  • "A Comprehensive Study of Double-Density Hemi-Cylindrical (HC) 3-D NAND Flash," 2020, IEEE Transactions on Electron Devices
  • "An Analog In-Memory-Search Solution based on 3D-NAND Flash Memory for Brain-Inspired Computing," 2022, 2022 International Electron Devices Meeting (IEDM)
  • "Impacts and solutions of nonvolatile-memory-induced weight error in the computing-in-memory neural network system," 2020, Japanese Journal of Applied Physics

Frequent collaborators include Keh-Chung Wang, Ming-Hsiu Lee, Yu-Hsuan Lin, Po-Hao Tseng, and Hsiang-Lan Lung.

Areas of specialization cover the following main topics:

  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Physical Unclonable Functions (PUFs) and Hardware Security
  • Chaos-based Image/Signal Encryption
  • Cryptographic Implementations and Security
  • Advancements in Semiconductor Devices and Circuit Design

Subfields of study include electrical and electronic engineering, hardware and architecture, computer vision and pattern recognition, artificial intelligence, and materials chemistry.

Best Publications

  • Modeling and optimization of monolithic polycrystalline silicon resistors

    N.C.-C. Lu;L. Gerzberg;Chih-Yuan Lu;J.D. Meindl

  • A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device

    Hang-Ting Lue;Tzu-Hsuan Hsu;Yi-Hsuan Hsiao;S. P. Hong

  • Method of fabricating a buried reservoir capacitor structure for high-density dynamic random access memory (DRAM) circuits

    Chih-Yuan Lu;Janmye Sung

  • SEMICONDUCTOR CON AISLAMIENTO DE SURCOS LLENADOS POR FLUJO.

    Lee Kuo-Hua;Lu Chih-Yuan

  • Data retention behavior of a SONOS type two-bit storage flash memory cell

    W.J. Tsai;N.K. Zous;C.J. Liu;C.C. Liu

  • Future challenges of flash memory technologies

    Chih-Yuan Lu;Kuang-Yeu Hsieh;Rich Liu

  • Laser programmable electrically readable phase-change memory method and device

    Chih-Yuan Lu;Yi-Chou Chen

  • BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability

    Hang-Ting Lue;Szu-Yu Wang;Erh-Kun Lai;Yen-Hao Shih

  • High performance 22/20nm FinFET CMOS devices with advanced high-K/metal gate scheme

    C.C. Wu;D.W. Lin;A. Keshavarzi;C.H. Huang

  • A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

    Erh-Kun Lai;Hang-Ting Lue;Yi-Hsuan Hsiao;Jung-Yu Hsieh

  • Vertical DRAM cross point memory cell and fabrication method

    Chih-Yuan Lu

  • Design for high density memory with relaxed metal pitch

    Howard C. Kirsch;Chih-Yuan Lu

  • An access-transistor-free (0T/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device

    Yi-Chou Chen;C.F. Chen;C.T. Chen;J.Y. Yu

  • Method for manufacturing a multiple-bit-per-cell memory

    Chih Chieh Yeh;Han Chao Lai;Wen Jer Tsai;Tao Cheng Lu

  • Method for fabricating a DRAM cell structure on an SOI wafer incorporating a two dimensional trench capacitor

    Min-Hwa Chi;Chih-Yuan Lu

  • A conduction model for semiconductor-grain-boundary-semiconductor barriers in polycrystalline-silicon films

    N.C.-C. Lu;L. Gerzberg;Chih-Yuan Lu;J.D. Meindl

  • PHINES: a novel low power program/erase, small pitch, 2-bit per cell flash memory

    C.C. Yeh;W.J. Tsai;M.I. Liu;T.C. Lu

  • Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM

    W.C. Chien;Y.C. Chen;E.K. Lai;Y.D. Yao

  • Cause of data retention loss in a nitride-based localized trapping storage flash memory cell

    W.J. Tsai;S.H. Gu;N.K. Zous;C.C. Yeh

  • Study of sub-30nm thin film transistor (TFT) charge-trapping (CT) devices for 3D NAND flash application

    Tzu-Hsuan Hsu;Hang-Ting Lue;Chih-Chang Hsieh;Erh-Kun Lai

Frequent Co-Authors

Hang-Ting Lue
Hang-Ting Lue Macronix International (Taiwan)
Ya-Chin King
Ya-Chin King National Tsing Hua University
Hsiang-Lan Lung
Hsiang-Lan Lung Macronix International (Taiwan)
Yao-Wen Chang
Yao-Wen Chang National Taiwan University
Tseung-Yuen Tseng
Tseung-Yuen Tseng National Yang Ming Chiao Tung University
Tuo-Hung Hou
Tuo-Hung Hou National Yang Ming Chiao Tung University
Erh-Kun Lai
Erh-Kun Lai Macronix International (Taiwan)
Meng-Fan Chang
Meng-Fan Chang National Tsing Hua University

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