World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
44
Citations
8289
World Ranking
3716
National Ranking
57

Tuo-Hung Hou publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Tuo-Hung Hou sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 222 publications — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Tuo-Hung Hou D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Tuo-Hung Hou sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 44 D-Index — 47th percentile

47% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Tuo-Hung Hou is affiliated with National Yang Ming Chiao Tung University in Taiwan. Their research primarily spans the fields of Engineering and Materials Science, with a strong focus on Electrical and Electronic Engineering, Materials Chemistry, Artificial Intelligence, Biomedical Engineering, and Hardware and Architecture.

The scientist's main research topics include Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Semiconductor materials and devices, MXene and MAX Phase Materials, Ferroelectric and Piezoelectric Materials, and Electronic and Structural Properties of Oxides.

They have published extensively in several venues, notably:

  • IEEE Transactions on Electron Devices (17 publications)
  • arXiv (Cornell University) (7 publications)
  • 2022 International Electron Devices Meeting (IEDM) (4 publications)
  • ACS Nano (3 publications)
  • IEEE Electron Device Letters (3 publications)

Some recent papers highlight their contributions over the years:

  • SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices, 2020, Scientific Reports
  • Standards for the Characterization of Endurance in Resistive Switching Devices, 2021, ACS Nano
  • Roadmap to neuromorphic computing with emerging technologies, 2024, APL Materials
  • Progress and Benchmark of Spiking Neuron Devices and Circuits, 2021, Advanced Intelligent Systems
  • Ferroelectric HfZrO2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training, 2020, IEEE Transactions on Electron Devices

The scientist has collaborated frequently with several coauthors, including I-Ting Wang, M. H. Lee, K.-Y. Hsiang, Hsin-Hui Huang, and Ming-Hung Wu.

In addition to journal articles and conference papers, Tuo-Hung Hou has contributed to book publications, notably a work published by Springer Nature titled "Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations" released in 2021.

Best Publications

  • SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices.

    Sandeep Kaur Kingra;Vivek Parmar;Che Chia Chang;Boris Hudec

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Electrode dependence of filament formation in HfO2 resistive-switching memory

    Kuan Liang Lin;Tuo Hung Hou;Jiann Shieh;Jun Hung Lin

  • Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications

    Jiun-Jia Huang;Yi-Ming Tseng;Chung-Wei Hsu;Tuo-Hung Hou

  • Standards for the Characterization of Endurance in Resistive Switching Devices.

    Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang

  • Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode

    Jiun Jia Huang;Chih Wei Kuo;Wei Chen Chang;Tuo-Hung Hou

  • Optically initialized robust valley-polarized holes in monolayer WSe2.

    Wei Ting Hsu;Yen Lun Chen;Chiang Hsiao Chen;Chiang Hsiao Chen;Pang Shiuan Liu

  • Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device

    Yu-Fen Wang;Yen-Chuan Lin;I-Ting Wang;Tzu-Ping Lin

  • 3D Ta/TaO x /TiO2/Ti synaptic array and linearity tuning of weight update for hardware neural network applications.

    I-Ting Wang;Chih-Cheng Chang;Li-Wen Chiu;Teyuh Chou

  • Stress memorization technique (SMT) by selectively strained-nitride capping for sub-65nm high-performance strained-Si device application

    Chien-Hao Chen;T.L. Lee;T.H. Hou;C.L. Chen

  • Multi-level control of conductive nano-filament evolution in HfO 2 ReRAM by pulse-train operations

    L. Zhao;H. Y. Chen;S. C. Wu;Z. Jiang

  • Mitigating Asymmetric Nonlinear Weight Update Effects in Hardware Neural Network Based on Analog Resistive Synapse

    Chih-Cheng Chang;Pin-Chun Chen;Teyuh Chou;I-Ting Wang

  • Fully parallel write/read in resistive synaptic array for accelerating on-chip learning.

    Ligang Gao;I-Ting Wang;Pai-Yu Chen;Sarma Vrudhula

  • One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications

    Jiun-Jia Huang;Yi-Ming Tseng;Wun-Cheng Luo;Chung-Wei Hsu

  • Mitigating Effects of Non-ideal Synaptic Device Characteristics for On-chip Learning

    Pai-Yu Chen;Binbin Lin;I-Ting Wang;Tuo-Hung Hou

  • Self-rectifying bipolar TaO x /TiO 2 RRAM with superior endurance over 10 12 cycles for 3D high-density storage-class memory

    Chung-Wei Hsu;I-Ting Wang;Chun-Li Lo;Ming-Chung Chiang

  • 3D synaptic architecture with ultralow sub-10 fJ energy per spike for neuromorphic computation

    I-Ting Wang;Yen-Chuan Lin;Yu-Fen Wang;Chung-Wei Hsu

  • Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication

    Hong Yu Chen;Stefano Brivio;Che Chia Chang;Jacopo Frascaroli

  • Design Optimization of Metal Nanocrystal Memory—Part I: Nanocrystal Array Engineering

    Tuo-Hung Hou;Chungho Lee;Chungho Lee;V. Narayanan;V. Narayanan;U. Ganguly

  • Large‐Area 2D Layered MoTe2 by Physical Vapor Deposition and Solid‐Phase Crystallization in a Tellurium‐Free Atmosphere

    Jyun Hong Huang;Kuang Ying Deng;Pang Shiuan Liu;Chien Ting Wu

  • Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector–One Resistor Crossbar Array

    Chun-Li Lo;Tuo-Hung Hou;Mei-Chin Chen;Jiun-Jia Huang

Frequent Co-Authors

Edwin C. Kan
Edwin C. Kan Cornell University
Mong-Song Liang
Mong-Song Liang Taiwan Semiconductor Manufacturing Company (United States)
Lain-Jong Li
Lain-Jong Li National University of Singapore
H.-S. Philip Wong
H.-S. Philip Wong Stanford University
Wen-Hao Chang
Wen-Hao Chang National Yang Ming Chiao Tung University
Shimeng Yu
Shimeng Yu Georgia Institute of Technology
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Ming Liu
Ming Liu Fudan University
Hangbing Lv
Hangbing Lv Chinese Academy of Sciences

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