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Tuo-Hung Hou

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 44 3716 3570 57 57 222 8289

Tuo-Hung Hou publications per year

The chart shows the history of publications by Tuo-Hung Hou between 1985 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Tuo-Hung Hou published across 42 years, from 1985 to 2026, averaging 6.9 papers a year. Output peaked at 30 publications in 2025. 32 of the 288 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1985 to 2026. Vertical axis: number of publications, 0 to 30. Peak 30 publications in 2025. 1985: 1 publication 1986: 0 publications 1987: 0 publications 1988: 0 publications 1989: 0 publications 1990: 0 publications 1991: 0 publications 1992: 0 publications 1993: 0 publications 1994: 0 publications 1995: 0 publications 1996: 0 publications 1997: 0 publications 1998: 0 publications 1999: 1 publication 2000: 0 publications 2001: 3 publications 2002: 2 publications 2003: 10 publications 2004: 8 publications 2005: 5 publications 2006: 7 publications 2007: 4 publications 2008: 8 publications 2009: 4 publications 2010: 10 publications 2011: 13 publications 2012: 9 publications 2013: 11 publications 2014: 8 publications 2015: 12 publications 2016: 16 publications 2017: 8 publications 2018: 11 publications 2019: 12 publications 2020: 18 publications 2021: 16 publications 2022: 19 publications 2023: 16 publications 2024: 24 publications 2025: 30 publications 2026: 2 publications
1985 2026

288 publications in total across all disciplines

View publications per year as a table
Tuo-Hung Hou: publications per year, 1985 to 2026
Year Publications
1985 1
1986 0
1987 0
1988 0
1989 0
1990 0
1991 0
1992 0
1993 0
1994 0
1995 0
1996 0
1997 0
1998 0
1999 1
2000 0
2001 3
2002 2
2003 10
2004 8
2005 5
2006 7
2007 4
2008 8
2009 4
2010 10
2011 13
2012 9
2013 11
2014 8
2015 12
2016 16
2017 8
2018 11
2019 12
2020 18
2021 16
2022 19
2023 16
2024 24
2025 30
2026 2
Total 288
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Tuo-Hung Hou publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Tuo-Hung Hou sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 214–233 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 222 publications — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431 222
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Tuo-Hung Hou D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Tuo-Hung Hou sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 44 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 44 D-Index — 47th percentile

47% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155 44
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Tuo-Hung Hou is affiliated with National Yang Ming Chiao Tung University in Taiwan. Their research primarily spans the fields of Engineering and Materials Science, with a strong focus on Electrical and Electronic Engineering, Materials Chemistry, Artificial Intelligence, Biomedical Engineering, and Hardware and Architecture.

The scientist's main research topics include Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Semiconductor materials and devices, MXene and MAX Phase Materials, Ferroelectric and Piezoelectric Materials, and Electronic and Structural Properties of Oxides.

They have published extensively in several venues, notably:

  • IEEE Transactions on Electron Devices (17 publications)
  • arXiv (Cornell University) (7 publications)
  • 2022 International Electron Devices Meeting (IEDM) (4 publications)
  • ACS Nano (3 publications)
  • IEEE Electron Device Letters (3 publications)

Some recent papers highlight their contributions over the years:

  • SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices, 2020, Scientific Reports
  • Standards for the Characterization of Endurance in Resistive Switching Devices, 2021, ACS Nano
  • Roadmap to neuromorphic computing with emerging technologies, 2024, APL Materials
  • Progress and Benchmark of Spiking Neuron Devices and Circuits, 2021, Advanced Intelligent Systems
  • Ferroelectric HfZrO2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training, 2020, IEEE Transactions on Electron Devices

The scientist has collaborated frequently with several coauthors, including I-Ting Wang, M. H. Lee, K.-Y. Hsiang, Hsin-Hui Huang, and Ming-Hung Wu.

In addition to journal articles and conference papers, Tuo-Hung Hou has contributed to book publications, notably a work published by Springer Nature titled "Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations" released in 2021.

Best Publications

  • SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices.

    Sandeep Kaur Kingra;Vivek Parmar;Che Chia Chang;Boris Hudec

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Electrode dependence of filament formation in HfO2 resistive-switching memory

    Kuan Liang Lin;Tuo Hung Hou;Jiann Shieh;Jun Hung Lin

  • Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications

    Jiun-Jia Huang;Yi-Ming Tseng;Chung-Wei Hsu;Tuo-Hung Hou

  • Standards for the Characterization of Endurance in Resistive Switching Devices.

    Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang

  • Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode

    Jiun Jia Huang;Chih Wei Kuo;Wei Chen Chang;Tuo-Hung Hou

  • Optically initialized robust valley-polarized holes in monolayer WSe2.

    Wei Ting Hsu;Yen Lun Chen;Chiang Hsiao Chen;Chiang Hsiao Chen;Pang Shiuan Liu

  • Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device

    Yu-Fen Wang;Yen-Chuan Lin;I-Ting Wang;Tzu-Ping Lin

  • 3D Ta/TaO x /TiO2/Ti synaptic array and linearity tuning of weight update for hardware neural network applications.

    I-Ting Wang;Chih-Cheng Chang;Li-Wen Chiu;Teyuh Chou

  • Stress memorization technique (SMT) by selectively strained-nitride capping for sub-65nm high-performance strained-Si device application

    Chien-Hao Chen;T.L. Lee;T.H. Hou;C.L. Chen

  • Multi-level control of conductive nano-filament evolution in HfO 2 ReRAM by pulse-train operations

    L. Zhao;H. Y. Chen;S. C. Wu;Z. Jiang

  • Mitigating Asymmetric Nonlinear Weight Update Effects in Hardware Neural Network Based on Analog Resistive Synapse

    Chih-Cheng Chang;Pin-Chun Chen;Teyuh Chou;I-Ting Wang

  • Fully parallel write/read in resistive synaptic array for accelerating on-chip learning.

    Ligang Gao;I-Ting Wang;Pai-Yu Chen;Sarma Vrudhula

  • One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications

    Jiun-Jia Huang;Yi-Ming Tseng;Wun-Cheng Luo;Chung-Wei Hsu

  • Mitigating Effects of Non-ideal Synaptic Device Characteristics for On-chip Learning

    Pai-Yu Chen;Binbin Lin;I-Ting Wang;Tuo-Hung Hou

  • Self-rectifying bipolar TaO x /TiO 2 RRAM with superior endurance over 10 12 cycles for 3D high-density storage-class memory

    Chung-Wei Hsu;I-Ting Wang;Chun-Li Lo;Ming-Chung Chiang

  • 3D synaptic architecture with ultralow sub-10 fJ energy per spike for neuromorphic computation

    I-Ting Wang;Yen-Chuan Lin;Yu-Fen Wang;Chung-Wei Hsu

  • Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication

    Hong Yu Chen;Stefano Brivio;Che Chia Chang;Jacopo Frascaroli

  • Design Optimization of Metal Nanocrystal Memory—Part I: Nanocrystal Array Engineering

    Tuo-Hung Hou;Chungho Lee;Chungho Lee;V. Narayanan;V. Narayanan;U. Ganguly

  • Large‐Area 2D Layered MoTe2 by Physical Vapor Deposition and Solid‐Phase Crystallization in a Tellurium‐Free Atmosphere

    Jyun Hong Huang;Kuang Ying Deng;Pang Shiuan Liu;Chien Ting Wu

  • Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector–One Resistor Crossbar Array

    Chun-Li Lo;Tuo-Hung Hou;Mei-Chin Chen;Jiun-Jia Huang

Frequent Co-Authors

Edwin C. Kan
Edwin C. Kan Cornell University
Mong-Song Liang
Mong-Song Liang Taiwan Semiconductor Manufacturing Company (United States)
Lain-Jong Li
Lain-Jong Li National University of Singapore
H.-S. Philip Wong
H.-S. Philip Wong Stanford University
Wen-Hao Chang
Wen-Hao Chang National Yang Ming Chiao Tung University
Shimeng Yu
Shimeng Yu Georgia Institute of Technology
Gennadi Bersuker
Gennadi Bersuker The Aerospace Corporation
Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Ming Liu
Ming Liu Fudan University
Hangbing Lv
Hangbing Lv Chinese Academy of Sciences

External Links

Personal website of Tuo-Hung Hou Google Scholar page

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