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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 51 2714 2604 1029 962 376 8453
Materials Science 51 9994 9653 2398 2225 374 8369

Mong-Song Liang publications per year

The chart shows the history of publications by Mong-Song Liang between 1981 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Mong-Song Liang published across 45 years, from 1981 to 2025, averaging 9.2 papers a year. Output peaked at 47 publications in 2004. 18 of the 416 publications appeared in the last two years.

No. of publications
10 20 30 40
Bar chart. Horizontal axis: year, 1981 to 2025. Vertical axis: number of publications, 0 to 47. Peak 47 publications in 2004. 1981: 3 publications 1982: 0 publications 1983: 3 publications 1984: 2 publications 1985: 0 publications 1986: 3 publications 1987: 4 publications 1988: 0 publications 1989: 1 publication 1990: 0 publications 1991: 0 publications 1992: 1 publication 1993: 2 publications 1994: 2 publications 1995: 9 publications 1996: 28 publications 1997: 20 publications 1998: 12 publications 1999: 25 publications 2000: 25 publications 2001: 38 publications 2002: 30 publications 2003: 39 publications 2004: 47 publications 2005: 13 publications 2006: 32 publications 2007: 15 publications 2008: 14 publications 2009: 3 publications 2010: 3 publications 2011: 4 publications 2012: 2 publications 2013: 1 publication 2014: 2 publications 2015: 0 publications 2016: 1 publication 2017: 1 publication 2018: 0 publications 2019: 0 publications 2020: 1 publication 2021: 0 publications 2022: 3 publications 2023: 9 publications 2024: 8 publications 2025: 10 publications
1981 2025

416 publications in total across all disciplines

View publications per year as a table
Mong-Song Liang: publications per year, 1981 to 2025
Year Publications
1981 3
1982 0
1983 3
1984 2
1985 0
1986 3
1987 4
1988 0
1989 1
1990 0
1991 0
1992 1
1993 2
1994 2
1995 9
1996 28
1997 20
1998 12
1999 25
2000 25
2001 38
2002 30
2003 39
2004 47
2005 13
2006 32
2007 15
2008 14
2009 3
2010 3
2011 4
2012 2
2013 1
2014 2
2015 0
2016 1
2017 1
2018 0
2019 0
2020 1
2021 0
2022 3
2023 9
2024 8
2025 10
Total 416
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Mong-Song Liang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Mong-Song Liang sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 374–393 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 376 publications — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187 376
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Mong-Song Liang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Mong-Song Liang sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 51 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 51 D-Index — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156 51
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Mong-Song Liang is affiliated with Taiwan Semiconductor Manufacturing Company (United States) and conducts research primarily in the domains of Agricultural and Biological Sciences as well as Biochemistry, Genetics and Molecular Biology. Their publication record spans multiple subfields, including Plant Science, Molecular Biology, Cancer Research, Biochemistry, and Physiology.

Their research focuses on key topics such as Plant Physiology and Cultivation Studies, Postharvest Quality and Shelf Life Management, Plant Reproductive Biology, Plant Gene Expression Analysis, Plant Biochemistry and Biosynthesis, Horticultural and Viticultural Research, and Phytochemicals and Antioxidant Activities.

Frequent co-authors of Mong-Song Liang include Aidi Zhang, Hongxia Zhang, Qingyu Li, Songling Bai, and Yuanwen Teng, reflecting collaborative efforts across various studies and publications.

Common venues for publication include Frontiers in Plant Science, Postharvest Biology and Technology, Plant Physiology and Biochemistry, Plant Cell & Environment, and the International Journal of Mechanical Sciences.

Recent papers authored or co-authored by Mong-Song Liang include:

  • ABA-responsive ABRE-BINDING FACTOR3 activates DAM3 expression to promote bud dormancy in Asian pear, 2020, Plant Cell & Environment
  • High-quality genome assembly of 'Cuiguan' pear (Pyrus pyrifolia) as a reference genome for identifying regulatory genes and epigenetic modifications responsible for bud dormancy, 2021, Horticulture Research
  • Transcriptome co-expression network analysis identifies key genes and regulators of ripening kiwifruit ester biosynthesis, 2020, BMC Plant Biology
  • The mechanism of gibberellins treatment suppressing kiwifruit postharvest ripening processes by transcriptome analysis, 2023, Postharvest Biology and Technology
  • Downregulation of long non-coding RNA LINC-PINT serves as a diagnostic and prognostic biomarker in patients with non-small cell lung cancer, 2021, Oncology Letters

Best Publications

  • 5nm-gate nanowire FinFET

    Fu-Liang Yang;Di-Hong Lee;Hou-Yu Chen;Chang-Yun Chang

  • 25 nm CMOS Omega FETs

    Fu-Liang Yang;Hao-Yu Chen;Fang-Cheng Chen;Cheng-Chuan Huang

  • Low K dielectric surface damage control

    Hun-Jan Tao;Ryan Chia-Jen Chen;Mong-Song Liang

  • Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's

    Mong-Song Liang;Jeong Yeol Choi;Ping-Keung Ko;Chenming Hu

  • Method for producing high throughput strained-Si channel MOSFETS

    Kuen-Chyr Lee;Liang-Gi Yao;Shih-Chang Chen;Mong-Song Liang

  • Stress memorization technique (SMT) by selectively strained-nitride capping for sub-65nm high-performance strained-Si device application

    Chien-Hao Chen;T.L. Lee;T.H. Hou;C.L. Chen

  • MOSFET degradation due to stressing of thin oxide

    Mong-Song Liang;Chi Chang;Yew Tong Yeow;Chenming Hu

  • Multi-level, split-gate, flash memory cell

    Mong-Song Liang;Di-Son Kuo;Ching-Hsiang Hsu;Ruei-Ling Lin

  • MOS Devices with Partial Stressor Channel

    Ming-Hua Yu;Mong-Song Liang;Tze-Liang Lee;Jr.-Hung Li

  • Method for fabricating a dual-gate dielectric module for memory with embedded logic technology

    Chung Hsin Fang;Julie Huang;Chen-Jong Wang;Mong-Song Liang

  • Electron trapping in very thin thermal silicon dioxides

    Mong-Song Liang;Chenming Hu

  • Multi-level, split-gate, flash memory cell and method of manufacture thereof

    Mong-Song Liang;Di-Son Kuo;Ching-Hsiang Hsu;Ruei-Ling Lin

  • 35 nm CMOS FinFETs

    Fu-Liang Yang;Haur-Ywh Chen;Fang-Cheng Chen;Yi-Lin Chan

  • Body contacted SOI MOSFET

    Ching-Hsiang Hsu;Mong-Song Liang

  • Non-volatile-memory cell for electrically programmable read only memory having a trench-like coupling capacitors

    Jin-Yuan Lee;Mong-Song Liang

  • Multiple tilted angle ion implantation MOSFET method

    Mong-Song Liang;Chue-San Yoo;Mou-Shiung Lin

  • Hybrid Process for Forming Metal Gates of MOS Devices

    Peng-Fu Hsu;Yong-Tian Hou;Ssu-Yi Li;Kuo-Tai Huang

  • Elevated source/drain with solid phase diffused source/drain extension for deep sub-micron MOSFETS

    Ching-Hsiang Hsu;Mong-Song Liang

  • Strain balanced structure with a tensile strained silicon channel and a compressive strained silicon-germanium channel for CMOS performance enhancement

    Yee-Chia Yeo;Chun-Chieh Lin;Fu-Liang Yang;Mong-Song Liang

  • An enhanced 16nm CMOS technology featuring 2 nd generation FinFET transistors and advanced Cu/low-k interconnect for low power and high performance applications

    Shien-Yang Wu;C.Y. Lin;M.C. Chiang;J.J. Liaw

  • Selectively controllable gas feed zones for a plasma reactor

    Shun-Jan Tao;Huan-Just Lin;Mong-Song Liang

Frequent Co-Authors

Chen-Hua Yu
Chen-Hua Yu Taiwan Semiconductor Manufacturing Company (Taiwan)
Chenming Hu
Chenming Hu University of California, Berkeley
Carlos H. Diaz
Carlos H. Diaz Taiwan Semiconductor Manufacturing Company (United States)
Fu-Liang Yang
Fu-Liang Yang Academia Sinica
Tuo-Hung Hou
Tuo-Hung Hou National Yang Ming Chiao Tung University
Jhon-Jhy Liaw
Jhon-Jhy Liaw Taiwan Semiconductor Manufacturing Company (Taiwan)
Tseung-Yuen Tseng
Tseung-Yuen Tseng National Yang Ming Chiao Tung University
Chee Wee Liu
Chee Wee Liu National Taiwan University
Lain-Jong Li
Lain-Jong Li National University of Singapore
J.Y.-C. Sun
J.Y.-C. Sun National Taiwan University

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