World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
4414
World Ranking
6099
National Ranking
108

Jhon-Jhy Liaw publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jhon-Jhy Liaw sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 119 publications — 7th percentile

7% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Jhon-Jhy Liaw D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jhon-Jhy Liaw sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Jhon-Jhy Liaw is affiliated with Taiwan Semiconductor Manufacturing Company (Taiwan) and works in the engineering field, focusing primarily on electrical and electronic engineering. Their research contributions span several interconnected areas within semiconductor technology and integrated circuits.

The main topics explored in Liaw's work include:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor Materials and Devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Low-power High-performance VLSI Design
  • Radiation Effects in Electronics

Liaw has published research in prominent venues such as the 2022 International Electron Devices Meeting (IEDM) and the IEEE Journal of Solid-State Circuits. These venues feature high-impact studies related to semiconductor device technologies and circuit design.

Recent papers authored by or involving Liaw include:

  • "A 3nm CMOS FinFlex™ Platform Technology with Enhanced Power Efficiency and Performance for Mobile SoC and High Performance Computing Applications," 2022, 2022 International Electron Devices Meeting (IEDM)
  • "Critical Process Features Enabling Aggressive Contacted Gate Pitch Scaling for 3nm CMOS Technology and Beyond," 2022, 2022 International Electron Devices Meeting (IEDM)
  • "3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM With Leakage Saving Circuits in 3-nm FinFET for HPC Applications," 2024, IEEE Journal of Solid-State Circuits

Their collaborative work involves frequent coauthors including Shien-Yang Wu, M.C. Chiang, J.-Y. Yeh, H.F. Chen, and K.T. Lai, each coauthoring multiple publications in the semiconductor field. This network supports ongoing research in device performance improvement and semiconductor scaling.

Liaw's contributions focus on developing low-power, high-efficiency semiconductor device platforms and novel circuit designs tailored for mobile systems-on-chips and high-performance computing applications. This aligns with trends in scaling CMOS technology to advanced nodes such as 3nm, addressing performance, power efficiency, and integration challenges.

Best Publications

  • Method of forming static random access memory (SRAM) and layout of SRAM

    Liaw Jhon-Jhy

  • Memory cell structure

    Jhon-Jhy Liaw

  • A 16nm FinFET CMOS technology for mobile SoC and computing applications

    Shien-Yang Wu;C. Y. Lin;M. C. Chiang;J. J. Liaw

  • SRAM cell design with high resistor CMOS gate structure for soft error rate improvement

    Jhon-Jhy Liaw

  • Methods for operating a FinFET SRAM array

    Jhon-Jhy Liaw

  • A 7nm CMOS platform technology featuring 4 th generation FinFET transistors with a 0.027um 2 high density 6-T SRAM cell for mobile SoC applications

    Shien-Yang Wu;C.Y. Lin;M.C. Chiang;J.J. Liaw

  • 13.5 A 16nm 128Mb SRAM in high-κ metal-gate FinFET technology with write-assist circuitry for low-V MIN applications

    Jonathan Chang;Yen-Huei Chen;Wei-Min Chan;Sahil Preet Singh

  • Semiconductor structure and method for forming the semiconductor structure

    Liaw Jhon-Jhy

  • FinFET Memory Device

    Jhon-Jhy Liaw

  • Method for metal gate structure for MOS devices

    Jhon-Jhy Liaw

  • Leakage scaling in deep submicron CMOS for SoC

    Yo-Sheng Lin;Chung-Cheng Wu;Chih-Sheng Chang;Rong-Ping Yang

  • Using an extra boron implant to improve the NMOS reverse narrow width effect in shallow trench isolation process

    Jhon-Jhy Liaw;Dun-Nian Yaung;Jin-Yuan Lee

  • Semiconductor device with improved contact structure and method of forming same

    Jhon-Jhy Liaw

  • Method of forming a static random access memory with a buried local interconnect

    Jhon-Jhy Liaw

  • An enhanced 16nm CMOS technology featuring 2 nd generation FinFET transistors and advanced Cu/low-k interconnect for low power and high performance applications

    Shien-Yang Wu;C.Y. Lin;M.C. Chiang;J.J. Liaw

  • Laterally recessed tungsten silicide gate structure used with a self-aligned contact structure including a straight walled sidewall spacer while filling recess

    Jhon-Jhy Liaw

  • Fuse window guard ring structure for nitride capped self aligned contact processes

    Jhon-Jhy Liaw

  • A 25-nm gate-length FinFET transistor module for 32nm node

    Chang-Yun Chang;Tsung-Lin Lee;Clement Wann;Li-Shyue Lai

  • Shallow trench isolation methods employing gap filling doped silicon oxide dielectric layer

    Jhon-Jhy Liaw;Jin-Yuan Lee;Kuei-Ying Lee;Chu-Yun Fu

  • Methods and apparatus for FinFET SRAM cells

    Jhon-Jhy Liaw

Frequent Co-Authors

Carlos H. Diaz
Carlos H. Diaz Taiwan Semiconductor Manufacturing Company (United States)
Mong-Song Liang
Mong-Song Liang Taiwan Semiconductor Manufacturing Company (United States)
Chenming Hu
Chenming Hu University of California, Berkeley
Clement Hsingjen Wann
Clement Hsingjen Wann Taiwan Semiconductor Manufacturing Company (Taiwan)
Fu-Liang Yang
Fu-Liang Yang Academia Sinica

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