World's Best Scientists 2026 revealed!
Changhwan Shin

Changhwan Shin

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
4101
World Ranking
6124
National Ranking
218

Changhwan Shin publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Changhwan Shin sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 214 publications — 34th percentile

34% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Changhwan Shin D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Changhwan Shin sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Changhwan Shin is affiliated with Korea University in South Korea and has contributed extensively to the field of engineering, with a strong focus on electrical and electronic engineering. Their body of work includes numerous publications related to semiconductor materials and devices, ferroelectric and negative capacitance devices, as well as advancements in semiconductor devices and circuit design.

Their research covers a range of specific topics such as:

  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Memory and Neural Computing
  • MXene and MAX Phase Materials
  • Integrated Circuits and Semiconductor Failure Analysis
  • Ferroelectric and Piezoelectric Materials

Changhwan Shin has collaborated frequently with several co-authors, indicating a broad network of research partnerships. Notable coauthors include:

  • Jaehyuk Lim
  • Yejoo Choi
  • Hyoung Won Baac
  • Juho Sung
  • Jaemin Shin

Their scholarly contributions have appeared in a range of scientific venues, with multiple articles published in prominent journals such as:

  • Semiconductor Science and Technology
  • IEEE Transactions on Electron Devices
  • Electronics
  • Micromachines
  • IEEE Access

Among the recent papers authored or coauthored by Changhwan Shin are:

  • "Ferroelectric Field-Effect-Transistor Integrated with Ferroelectrics Heterostructure," 2022, Advanced Science
  • "Recent Studies on Supercapacitors with Next-Generation Structures," 2020, Micromachines
  • "Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO2 Ferroelectric Capacitor," 2022, Sensors
  • "Understanding of Feedback Field-Effect Transistor and Its Applications," 2020, Applied Sciences
  • "Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor," 2020, Nano Convergence

Best Publications

  • Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching

    Jaesung Jo;Changhwan Shin

  • Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages

    A. Padilla;Chun Wing Yeung;Changhwan Shin;Chenming Hu

  • Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices.

    Jaesung Jo;Woo Young Choi;Jung Dong Park;Jae Won Shim

  • Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs

    N. Damrongplasit;Changhwan Shin;Sung Hwan Kim;R. A. Vega

  • Negative Capacitance FinFET With Sub-20-mV/decade Subthreshold Slope and Minimal Hysteresis of 0.48 V

    Eunah Ko;Jae Woo Lee;Changhwan Shin

  • Vertical Tunnel FET: Design Optimization With Triple Metal-Gate Layers

    Eunah Ko;Hyunjae Lee;Jung-Dong Park;Changhwan Shin

  • Study of Random-Dopant-Fluctuation (RDF) Effects for the Trigate Bulk MOSFET

    Changhwan Shin;Xin Sun;Tsu-Jae King Liu

  • Ultra-thick semi-crystalline photoactive donor polymer for efficient indoor organic photovoltaics

    Sang Chul Shin;Chang Woo Koh;Premkumar Vincent;Ji Soo Goo

  • Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

    Xin Sun;Qiang Lu;V. Moroz;H. Takeuchi

  • Effect of the Si/TiO2/BiVO4 Heterojunction on the Onset Potential of Photocurrents for Solar Water Oxidation

    Hyejin Jung;Hyejin Jung;Sang Youn Chae;Sang Youn Chae;Changhwan Shin;Byoung Koun Min;Byoung Koun Min

  • Recent Studies on Supercapacitors with Next-Generation Structures.

    Juho Sung;Changhwan Shin

  • Variation Study of the Planar Ground-Plane Bulk MOSFET, SOI FinFET, and Trigate Bulk MOSFET Designs

    Xin Sun;V. Moroz;N. Damrongplasit;Changhwan Shin

  • Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

    Eunah Ko;Jaemin Shin;Changhwan Shin;Changhwan Shin

  • Sub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor

    Eunah Ko;Hyunjae Lee;Youngin Goh;Sanghun Jeon

  • Performance and Area Scaling Benefits of FD-SOI Technology for 6-T SRAM Cells at the 22-nm Node

    Changhwan Shin;Min Hee Cho;Yasumasa Tsukamoto;Bich-Yen Nguyen

  • Study of Random Variation in Germanium-Source Vertical Tunnel FET

    Hyunjae Lee;Jung-Dong Park;Changhwan Shin

  • Steep Slope Silicon-On-Insulator Feedback Field-Effect Transistor: Design and Performance Analysis

    Changhoon Lee;Eunah Ko;Changhwan Shin

  • Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack.

    Gwang Sik Kim;Sun Woo Kim;Seung Hwan Kim;June Park

  • Impact of temperature on negative capacitance field-effect transistor

    Jaesung Jo;Changhwan Shin

  • A New Slit-Type Vacuum-Channel Transistor

    In Jun Park;Seok-Gy Jeon;Changhwan Shin

  • Study of High-k/Metal-Gate Work-Function Variation Using Rayleigh Distribution

    Hyohyun Nam;Changhwan Shin

  • Variation-Aware Advanced CMOS Devices and SRAM

    Changhwan Shin

Frequent Co-Authors

Borivoje Nikolic
Borivoje Nikolic University of California, Berkeley
Byung Jin Cho
Byung Jin Cho Chungbuk National University
Bich-Yen Nguyen
Bich-Yen Nguyen Soitec (France)
Krishna C. Saraswat
Krishna C. Saraswat Stanford University
Sanghun Jeon
Sanghun Jeon Korea Advanced Institute of Science and Technology
Yun Jeong Hwang
Yun Jeong Hwang Seoul National University
Byoung Koun Min
Byoung Koun Min Korea Institute of Science and Technology
Byeong Kwon Ju
Byeong Kwon Ju Korea University
Sungjoo Lee
Sungjoo Lee Sungkyunkwan University
Hiroshi Ishiwara
Hiroshi Ishiwara Tokyo Institute of Technology

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