World's Best Scientists 2026 revealed!
Changhwan Shin

Changhwan Shin

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
4101
World Ranking
6125
National Ranking
218

Overview

Changhwan Shin is affiliated with Korea University in South Korea and has contributed extensively to the field of engineering, with a strong focus on electrical and electronic engineering. Their body of work includes numerous publications related to semiconductor materials and devices, ferroelectric and negative capacitance devices, as well as advancements in semiconductor devices and circuit design.

Their research covers a range of specific topics such as:

  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Memory and Neural Computing
  • MXene and MAX Phase Materials
  • Integrated Circuits and Semiconductor Failure Analysis
  • Ferroelectric and Piezoelectric Materials

Changhwan Shin has collaborated frequently with several co-authors, indicating a broad network of research partnerships. Notable coauthors include:

  • Jaehyuk Lim
  • Yejoo Choi
  • Hyoung Won Baac
  • Juho Sung
  • Jaemin Shin

Their scholarly contributions have appeared in a range of scientific venues, with multiple articles published in prominent journals such as:

  • Semiconductor Science and Technology
  • IEEE Transactions on Electron Devices
  • Electronics
  • Micromachines
  • IEEE Access

Among the recent papers authored or coauthored by Changhwan Shin are:

  • "Ferroelectric Field-Effect-Transistor Integrated with Ferroelectrics Heterostructure," 2022, Advanced Science
  • "Recent Studies on Supercapacitors with Next-Generation Structures," 2020, Micromachines
  • "Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO2 Ferroelectric Capacitor," 2022, Sensors
  • "Understanding of Feedback Field-Effect Transistor and Its Applications," 2020, Applied Sciences
  • "Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor," 2020, Nano Convergence

Best Publications

  • Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching

    Jaesung Jo;Changhwan Shin

  • Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages

    A. Padilla;Chun Wing Yeung;Changhwan Shin;Chenming Hu

  • Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices.

    Jaesung Jo;Woo Young Choi;Jung Dong Park;Jae Won Shim

  • Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs

    N. Damrongplasit;Changhwan Shin;Sung Hwan Kim;R. A. Vega

  • Negative Capacitance FinFET With Sub-20-mV/decade Subthreshold Slope and Minimal Hysteresis of 0.48 V

    Eunah Ko;Jae Woo Lee;Changhwan Shin

  • Vertical Tunnel FET: Design Optimization With Triple Metal-Gate Layers

    Eunah Ko;Hyunjae Lee;Jung-Dong Park;Changhwan Shin

  • Study of Random-Dopant-Fluctuation (RDF) Effects for the Trigate Bulk MOSFET

    Changhwan Shin;Xin Sun;Tsu-Jae King Liu

  • Ultra-thick semi-crystalline photoactive donor polymer for efficient indoor organic photovoltaics

    Sang Chul Shin;Chang Woo Koh;Premkumar Vincent;Ji Soo Goo

  • Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

    Xin Sun;Qiang Lu;V. Moroz;H. Takeuchi

  • Effect of the Si/TiO2/BiVO4 Heterojunction on the Onset Potential of Photocurrents for Solar Water Oxidation

    Hyejin Jung;Hyejin Jung;Sang Youn Chae;Sang Youn Chae;Changhwan Shin;Byoung Koun Min;Byoung Koun Min

  • Recent Studies on Supercapacitors with Next-Generation Structures.

    Juho Sung;Changhwan Shin

  • Variation Study of the Planar Ground-Plane Bulk MOSFET, SOI FinFET, and Trigate Bulk MOSFET Designs

    Xin Sun;V. Moroz;N. Damrongplasit;Changhwan Shin

  • Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

    Eunah Ko;Jaemin Shin;Changhwan Shin;Changhwan Shin

  • Sub-60-mV/decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor

    Eunah Ko;Hyunjae Lee;Youngin Goh;Sanghun Jeon

  • Performance and Area Scaling Benefits of FD-SOI Technology for 6-T SRAM Cells at the 22-nm Node

    Changhwan Shin;Min Hee Cho;Yasumasa Tsukamoto;Bich-Yen Nguyen

  • Study of Random Variation in Germanium-Source Vertical Tunnel FET

    Hyunjae Lee;Jung-Dong Park;Changhwan Shin

  • Steep Slope Silicon-On-Insulator Feedback Field-Effect Transistor: Design and Performance Analysis

    Changhoon Lee;Eunah Ko;Changhwan Shin

  • Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack.

    Gwang Sik Kim;Sun Woo Kim;Seung Hwan Kim;June Park

  • Impact of temperature on negative capacitance field-effect transistor

    Jaesung Jo;Changhwan Shin

  • A New Slit-Type Vacuum-Channel Transistor

    In Jun Park;Seok-Gy Jeon;Changhwan Shin

  • Study of High-k/Metal-Gate Work-Function Variation Using Rayleigh Distribution

    Hyohyun Nam;Changhwan Shin

  • Variation-Aware Advanced CMOS Devices and SRAM

    Changhwan Shin

Frequent Co-Authors

Borivoje Nikolic
Borivoje Nikolic University of California, Berkeley
Byung Jin Cho
Byung Jin Cho Chungbuk National University
Bich-Yen Nguyen
Bich-Yen Nguyen Soitec (France)
Krishna C. Saraswat
Krishna C. Saraswat Stanford University
Sanghun Jeon
Sanghun Jeon Korea Advanced Institute of Science and Technology
Byoung Koun Min
Byoung Koun Min Korea Institute of Science and Technology
Hiroshi Ishiwara
Hiroshi Ishiwara Tokyo Institute of Technology
Byeong Kwon Ju
Byeong Kwon Ju Korea University
Sungjoo Lee
Sungjoo Lee Sungkyunkwan University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For those interested in Electronics and Electrical Engineering, exploring complementary online degrees can open doors to diverse career opportunities. Quick certifications that pay well, such as specialized technical programs, offer a fast track to gaining valuable skills and increasing employability in a competitive job market.

Many career paths in this field suit introverted professionals who thrive in analytical and detail-oriented roles. According to research on good paying jobs for introverts, positions in engineering, design, and project management align well with introverts’ strengths, providing both job satisfaction and financial rewards.

If you are considering expanding your qualifications in management, the fastest online project management degree programs can be an attractive option. These accelerated courses enhance leadership skills and prepare students to manage complex engineering projects effectively.

For those seeking a more comprehensive educational background, pursuing a project manager bachelor degree online offers a strong foundation. This degree is particularly beneficial for professionals aiming to transition into higher-level roles where managing teams and resources is essential.

Integrating these online pathways with a background in Electronics and Electrical Engineering helps create well-rounded professionals ready to take on future industry challenges.

Best Scientists Citing Changhwan Shin

Trending Scientists

Recently Published Articles