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Amit Agarwal publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Amit Agarwal sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

The last bar groups every scientist with 1,065 publications or more.

Amit Agarwal D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Amit Agarwal sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

The last bar groups every scientist with 111 D-Index or more.

Overview

Amit Agarwal is affiliated with the Indian Institute of Technology Kanpur in India. Their research spans several areas within computer science and engineering, with significant contributions in the subfields of artificial intelligence, electrical and electronic engineering, computer vision and pattern recognition, hardware and architecture, and computer networks and communications.

The primary topics covered by Agarwal's work include:

  • Advanced Memory and Neural Computing
  • Cryptographic Implementations and Security
  • Physical Unclonable Functions (PUFs) and Hardware Security
  • Low-power High-performance VLSI Design
  • Topic Modeling
  • Natural Language Processing Techniques
  • Security and Verification in Computing

Agarwal's publication record includes numerous papers across reputable venues, with a focus on very large scale integration, circuit design, and hardware security. Frequent outlets for the research include:

  • arXiv (Cornell University), with 12 publications
  • IEEE Journal of Solid-State Circuits, with 3 publications
  • IEEE Solid-State Circuits Letters, with 2 publications
  • 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), with 2 publications
  • 2022 IEEE International Solid-State Circuits Conference (ISSCC), with 1 publication

Notable recent papers are:

  • "A 617-TOPS/W All-Digital Binary Neural Network Accelerator in 10-nm FinFET CMOS," 2020, IEEE Journal of Solid-State Circuits
  • "A 4900-μm2 839-Mb/s Side-Channel Attack-Resistant AES-128 in 14-nm CMOS With Heterogeneous Sboxes, Linear Masked MixColumns, and Dual-Rail Key Addition," 2020, IEEE Journal of Solid-State Circuits
  • "An 8.3-to-18Gbps Reconfigurable SCA-Resistant/Dual-Core/Blind-Bulk AES Engine in Intel 4 CMOS," 2022, 2022 IEEE International Solid-State Circuits Conference (ISSCC)
  • "Wide-Range Many-Core SoC Design in Scaled CMOS: Challenges and Opportunities," 2021, IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • "A 7-Gbps SCA-Resistant Multiplicative-Masked AES Engine in Intel 4 CMOS," 2022, IEEE Journal of Solid-State Circuits

Collaboration is an important aspect of Agarwal's research output. Frequent co-authors include:

  • Mark Anders
  • Vivek De
  • Ram Krishnamurthy
  • Subhrakanta Panda
  • Hitesh Laxmichand Patel

Agarwal's work collectively contributes to ongoing research in hardware security, neural computing, and scalable integrated circuit design, reflecting a multidisciplinary approach within computer science and engineering domains.

Best Publications

  • Near-threshold voltage (NTV) design: opportunities and challenges

    Himanshu Kaul;Mark Anders;Steven Hsu;Amit Agarwal

  • 16.2 A 0.19pJ/b PVT-variation-tolerant hybrid physically unclonable function circuit for 100% stable secure key generation in 22nm CMOS

    Sanu K. Mathew;Sudhir K. Satpathy;Mark A. Anders;Himanshu Kaul

  • 2.4 Gbps, 7 mW All-Digital PVT-Variation Tolerant True Random Number Generator for 45 nm CMOS High-Performance Microprocessors

    S. K. Mathew;S. Srinivasan;M. A. Anders;H. Kaul

  • Leakage Power Analysis and Reduction for Nanoscale Circuits

    Amit Agarwal;Saibal Mukhopadhyay;Arijit Raychowdhury;Kaushik Roy

  • Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance—Part I: Model Description

    Girish Pahwa;Tapas Dutta;Amit Agarwal;Sourabh Khandelwal

  • 53 Gbps Native ${ m GF}(2 ^{4}) ^{2}$ Composite-Field AES-Encrypt/Decrypt Accelerator for Content-Protection in 45 nm High-Performance Microprocessors

    S K Mathew;F Sheikh;M Kounavis;S Gueron

  • 340 mV–1.1 V, 289 Gbps/W, 2090-Gate NanoAES Hardware Accelerator With Area-Optimized Encrypt/Decrypt GF(2 4 ) 2 Polynomials in 22 nm Tri-Gate CMOS

    Sanu Mathew;Sudhir Satpathy;Vikram Suresh;Mark Anders

  • Electric field induced gap modification in ultrathin blue phosphorus

    Barun Ghosh;Suhas Nahas;Somnath Bhowmick;Amit Agarwal

  • Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Above-Threshold Behavior

    Girish Pahwa;Amit Agarwal;Yogesh Singh Chauhan

  • A 320 mV 56 μW 411 GOPS/Watt Ultra-Low Voltage Motion Estimation Accelerator in 65 nm CMOS

    H. Kaul;M.A. Anders;S.K. Mathew;S.K. Hsu

  • Physical Insights on Negative Capacitance Transistors in Nonhysteresis and Hysteresis Regimes: MFMIS Versus MFIS Structures

    Girish Pahwa;Tapas Dutta;Amit Agarwal;Yogesh Singh Chauhan

  • A 4-fJ/b Delay-Hardened Physically Unclonable Function Circuit With Selective Bit Destabilization in 14-nm Trigate CMOS

    Sudhir Satpathy;Sanu K. Mathew;Vikram Suresh;Mark A. Anders

  • Compact Model for Ferroelectric Negative Capacitance Transistor With MFIS Structure

    Girish Pahwa;Tapas Dutta;Amit Agarwal;Yogesh Singh Chauhan

  • $\mu $ RNG: A 300–950 mV, 323 Gbps/W All-Digital Full-Entropy True Random Number Generator in 14 nm FinFET CMOS

    Sanu K. Mathew;David Johnston;Sudhir Satpathy;Vikram Suresh

  • Plasmonics with two-dimensional semiconductors: from basic research to technological applications

    Amit Agarwal;Miriam S Vitiello;Leonardo Viti;Anna Cupolillo

  • 16.1 A 340mV-to-0.9V 20.2Tb/s source-synchronous hybrid packet/circuit-switched 16×16 network-on-chip in 22nm tri-gate CMOS

    Gregory Chen;Mark A. Anders;Himanshu Kaul;Sudhir K. Satpathy

  • Thickness and electric-field-dependent polarizability and dielectric constant in phosphorene

    Piyush Kumar;B. S. Bhadoria;Sanjay Kumar;Somnath Bhowmick

  • Performance Evaluation of 7-nm Node Negative Capacitance FinFET-Based SRAM

    Tapas Dutta;Girish Pahwa;Amit Ranjan Trivedi;Saurabh Sinha

  • A 300 mV 494GOPS/W Reconfigurable Dual-Supply 4-Way SIMD Vector Processing Accelerator in 45 nm CMOS

    Himanshu Kaul;Mark A. Anders;Sanu K. Mathew;Steven K. Hsu

  • Designing energy efficient and hysteresis free negative capacitance FinFET with negative DIBL and 3.5X I ON using compact modeling approach

    Girish Pahwa;Tapas Dutta;Amit Agarwal;Yogesh Singh Chauhan

Frequent Co-Authors

Ram Krishnamurthy
Ram Krishnamurthy Intel (United States)
Mark A. Anders
Mark A. Anders Intel (United States)
Sanu Mathew
Sanu Mathew Intel (United States)
Yogesh Singh Chauhan
Yogesh Singh Chauhan Indian Institute of Technology Kanpur
Vivek De
Vivek De Intel (United States)
Antonio Politano
Antonio Politano University of L'Aquila
Danil W. Boukhvalov
Danil W. Boukhvalov Nanjing Forestry University
Shekhar Borkar
Shekhar Borkar Qualcomm (United States)
Kaushik Roy
Kaushik Roy Purdue University West Lafayette
Lixue Zhang
Lixue Zhang Qingdao University

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