World's Best Scientists 2026 revealed!
Makoto Takamiya

Makoto Takamiya

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
7921
World Ranking
4442
National Ranking
173

Makoto Takamiya publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Makoto Takamiya sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 340 publications — 65th percentile

65% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Makoto Takamiya D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Makoto Takamiya sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 40 D-Index — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Makoto Takamiya is affiliated with the University of Tokyo in Japan, where their research focuses primarily on various aspects of electrical and electronic engineering. Their work spans topics related to silicon carbide semiconductor technologies, advancements in semiconductor devices and circuit design, and wireless power transfer systems.

The main fields of study for Takamiya include:

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Automotive Engineering
  • Media Technology
  • Aerospace Engineering

Takamiya's research topics cover a wide range of areas including:

  • Silicon Carbide Semiconductor Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Energy Harvesting in Wireless Networks
  • Electrostatic Discharge in Electronics
  • Wireless Power Transfer Systems
  • Advanced DC-DC Converters
  • Semiconductor materials and devices

The scientist has contributed to academic publications in several notable venues, such as:

  • IEEE Transactions on Power Electronics
  • IEEE Transactions on Circuits and Systems I Regular Papers
  • Power Electronic Devices and Components
  • IEEE Access
  • IEEE Journal of Solid-State Circuits

Selected recent publications include:

  • "Structure-Reconfigurable Power Amplifier (SR-PA) and 0X/1X Regulating Rectifier for Adaptive Power Control in Wireless Power Transfer System," 2020, IEEE Journal of Solid-State Circuits
  • "Digital Transmitter Coil for Wireless Power Transfer Robust Against Variation of Distance and Lateral Misalignment," 2020, IEEE Transactions on Microwave Theory and Techniques
  • "0.55 W, 88%, 78 kHz, 48 V-to-5 V Fibonacci Hybrid DC-DC Converter IC Using 66 mm3 of Passive Components With Automatic Change of Converter Topology and Duty Ratio for Cold-Crank Transient," 2021, IEEE Transactions on Power Electronics
  • "A 6.78-MHz Multiple-Transmitter Wireless Power Transfer System With Efficiency Maximization by Adaptive Magnetic Field Adder IC," 2022, IEEE Journal of Solid-State Circuits
  • "High-Speed Searching of Optimum Switching Pattern for Digital Active Gate Drive to Adapt to Various Load Conditions," 2021, IEEE Transactions on Industrial Electronics

Frequent collaborators include:

  • Katsuhiro Hata
  • Takayasu Sakurai
  • Thatree Mamee
  • Shin-ichi Nishizawa
  • Wataru Saito

Best Publications

  • Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays

    Tsuyoshi Sekitani;Tomoyuki Yokota;Ute Zschieschang;Hagen Klauk

  • A large-area wireless power-transmission sheet using printed organic transistors and plastic MEMS switches

    Tsuyoshi Sekitani;Makoto Takamiya;Yoshiaki Noguchi;Shintaro Nakano

  • 0.5-V input digital LDO with 98.7% current efficiency and 2.7-µA quiescent current in 65nm CMOS

    Yasuyuki Okuma;Koichi Ishida;Yoshikatsu Ryu;Xin Zhang

  • Sheet-Type Braille Displays by Integrating Organic Field-Effect Transistors and Polymeric Actuators

    Y. Kato;T. Sekitani;M. Takamiya;M. Doi

  • A large-area flexible wireless power transmission sheet using printed plastic MEMS switches and organic field-effect transistors

    Tsuyoshi Sekitani;Makoto Takamiya;Yoshiaki Noguchi;Shintaro Nakano

  • Printed Nonvolatile Memory for a Sheet-Type Communication System

    T. Sekitani;K. Zaitsu;Y. Noguchi;K. Ishibe

  • Startup Techniques for 95 mV Step-Up Converter by Capacitor Pass-On Scheme and ${ m V}_{ m TH}$ -Tuned Oscillator With Fixed Charge Programming

    Po-Hung Chen;K. Ishida;K. Ikeuchi;Xin Zhang

  • A 4 V Operation, Flexible Braille Display Using Organic Transistors, Carbon Nanotube Actuators, and Organic Static Random-Access Memory

    Kenjiro Fukuda;Tsuyoshi Sekitani;Ute Zschieschang;Hagen Klauk

  • Boosted gate MOS (BGMOS): device/circuit cooperation scheme to achieve leakage-free giga-scale integration

    T. Inukai;M. Takamiya;K. Nose;H. Kawaguchi

  • Control of threshold voltage of organic field-effect transistors with double-gate structures

    Shingo Iba;Tsuyoshi Sekitani;Yusaku Kato;Takao Someya

  • An on-chip 100 GHz-sampling rate 8-channel sampling oscilloscope with embedded sampling clock generator

    M. Takamiya;M. Mizuno;K. Nakamura

  • General-Purpose Clocked Gate Driver IC With Programmable 63-Level Drivability to Optimize Overshoot and Energy Loss in Switching by a Simulated Annealing Algorithm

    Koutarou Miyazaki;Seiya Abe;Masanori Tsukuda;Ichiro Omura

  • Sheet-Type Flexible Organic Active Matrix Amplifier System Using Pseudo-CMOS Circuits With Floating-Gate Structure

    T. Yokota;T. Sekitani;T. Tokuhara;N. Take

  • Insole Pedometer With Piezoelectric Energy Harvester and 2 V Organic Circuits

    K. Ishida;Tsung-Ching Huang;K. Honda;Y. Shinozuka

  • A 25-mV-Sensitivity 2-Gb/s Optimum-Logic-Threshold Capacitive-Coupling Receiver for Wireless Wafer Probing Systems

    Gil-Su Kim;M. Takamiya;T. Sakurai

  • 0.18-V input charge pump with forward body biasing in startup circuit using 65nm CMOS

    Po-Hung Chen;Koichi Ishida;Xin Zhang;Yasuaki Okuma

  • Large-Area Flexible Ultrasonic Imaging System With an Organic Transistor Active Matrix

    Yusaku Kato;Tsuyoshi Sekitani;Yoshiaki Noguchi;Tomoyuki Yokota

  • Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias

    Toshiro Hiramoto;Makoto Takamiya

  • Stacked-Chip Implementation of On-Chip Buck Converter for Distributed Power Supply System in SiPs

    K. Onizuka;K. Inagaki;H. Kawaguchi;M. Takamiya

  • An Organic FET SRAM With Back Gate to Increase Static Noise Margin and Its Application to Braille Sheet Display

    M. Takamiya;T. Sekitani;Y. Kato;H. Kawaguchi

  • A 95mV-startup step-up converter with V th -tuned oscillator by fixed-charge programming and capacitor pass-on scheme

    Po-Hung Chen;Koichi Ishida;Katsuyuki Ikeuchi;Xin Zhang

Frequent Co-Authors

Takayasu Sakurai
Takayasu Sakurai University of Tokyo
Tsuyoshi Sekitani
Tsuyoshi Sekitani Osaka University
Takao Someya
Takao Someya University of Tokyo
Toshiro Hiramoto
Toshiro Hiramoto University of Tokyo
Hiroshi Kawaguchi
Hiroshi Kawaguchi University of Tokyo
Tomoyuki Yokota
Tomoyuki Yokota University of Tokyo
Ute Zschieschang
Ute Zschieschang Max Planck Institute for Solid State Research
Hagen Klauk
Hagen Klauk Max Planck Institute for Solid State Research
Ken Takeuchi
Ken Takeuchi University of Tokyo
Takeshi Sakurai
Takeshi Sakurai University of Tsukuba

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