World's Best Scientists 2026 revealed!
Ken Takeuchi

Ken Takeuchi

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
8748
World Ranking
5443
National Ranking
229

Ken Takeuchi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ken Takeuchi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 422 publications — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Ken Takeuchi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ken Takeuchi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 35 D-Index — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Ken Takeuchi is affiliated with the University of Tokyo in Japan and has a research focus primarily in the field of Engineering, with significant contributions to Electrical and Electronic Engineering. Their work spans a range of subfields including Epidemiology, Computer Networks and Communications, Genetics, and Artificial Intelligence.

Their research covers multiple specialized topics, notably Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Semiconductor Materials and Devices, Inflammatory Bowel Disease, Microscopic Colitis, Advanced Data Storage Technologies, and Neural Dynamics and Brain Function.

Recent publications by Ken Takeuchi illustrate a multidisciplinary approach that bridges materials science, electronics, and medical research. Recent papers include:

  • Elucidating Cathode Degradation Mechanisms in LiNi 0.8 Mn 0.1 Co 0.1 O 2 (NMC811)/Graphite Cells Under Fast Charge Rates Using Operando Synchrotron Characterization (2022, Journal of The Electrochemical Society)
  • Treatment escalation and de-escalation decisions in Crohn's disease: Delphi consensus recommendations from Japan, 2021 (2023, Journal of Gastroenterology)
  • Real-world efficacy and safety of advanced therapies in hospitalized patients with ulcerative colitis (2023, Journal of Gastroenterology)
  • A Stochastic Leaky-Integrate-and-Fire Neuron Model With Floating Gate-Based Technology for Fast and Accurate Population Coding (2022, IEEE Journal of the Electron Devices Society)
  • Privacy Protection NAND Flash System With Flexible Data-Lifetime Control by In-3-D Vertical Cell Processing (2020, IEEE Journal of Solid-State Circuits)

Ken Takeuchi frequently collaborates with other researchers, with notable coauthors including:

  • Chihiro Matsui
  • Naoko Misawa
  • Katsuyoshi Matsuoka
  • Hiroshi Nakase
  • Motohiro Esaki

Their work has been published repeatedly in several prominent venues such as:

  • Japanese Journal of Applied Physics
  • IEICE Transactions on Electronics
  • Journal of Gastroenterology
  • IEEE Journal of Solid-State Circuits
  • Gastroenterology

Best Publications

  • Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays

    Tsuyoshi Sekitani;Tomoyuki Yokota;Ute Zschieschang;Hagen Klauk

  • Non-volatile semiconductor memory

    Koji Hosono;Hiroshi Nakamura;Ken Takeuchi;Kenichi Imamiya

  • Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells

    Ken Takeuchi;Tomoharu Tanaka;Noboru Shibata

  • A multipage cell architecture for high-speed programming multilevel NAND flash memories

    K. Takeuchi;T. Tanaka;T. Tanzawa

  • Nonvolatile semiconductor memory device with soft-programming to adjust erased state of memory cells

    Tomoharu Tanaka;Hiroshi Nakamura;Ken Takeuchi;Riichiro Shirota

  • Circuit techniques for a 1.8-V-only NAND flash memory

    T. Tanzawa;T. Tanaka;K. Takeuchi;H. Nakamura

  • A 56-nm CMOS 99- ${\hbox {mm}}^{2} $ 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput

    K. Takeuchi;Y. Kameda;S. Fujimura;H. Otake

  • Multi-level non-volatile semiconductor memory device with verify voltages having a smart temperature coefficient

    Ken Takeuchi;Tomoharu Tanaka

  • A double-level-V/sub th/ select gate array architecture for multilevel NAND flash memories

    K. Takeuchi;T. Tanaka;H. Nakamura

  • A 125-mm/sup 2/ 1-Gb NAND flash memory with 10-MByte/s program speed

    K. Imamiya;H. Nakamura;T. Himeno;T. Yarnamura

  • Novel Co-Design of NAND Flash Memory and NAND Flash Controller Circuits for Sub-30 nm Low-Power High-Speed Solid-State Drives (SSD)

    K. Takeuchi

  • Semiconductor memory device having variable number of selected cell pages and subcell arrays

    Ken Takeuchi;Tomoharu Tanaka

  • Semiconductor memory device with test mode

    Tamio Ikehashi;Ken Takeuchi;Toshihiko Himeno

  • Nonvolatile semiconductor memory device having a data circuit for erasing and writing operations

    Ken Takeuchi;Tomoharu Tanaka

  • A compact on-chip ECC for low cost flash memories

    T. Tanzawa;T. Tanaka;K. Takeuchi;R. Shirota

  • Error-Prediction LDPC and Error-Recovery Schemes for Highly Reliable Solid-State Drives (SSDs)

    Shuhei Tanakamaru;Yuki Yanagihara;Ken Takeuchi

  • A negative V/sub th/ cell architecture for highly scalable, excellently noise-immune, and highly reliable NAND flash memories

    K. Takeuchi;S. Satoh;T. Tanaka;K. Imamiya

  • A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput

    K. Takeuchi;Y. Kameda;S. Fujimura;H. Otake

  • Memory controller and data storage device

    Ken Takeuchi;Shuhei Tanakamaru

  • x11 performance increase, x6.9 endurance enhancement, 93% energy reduction of 3D TSV-integrated hybrid ReRAM/MLC NAND SSDs by data fragmentation suppression

    Hiroki Fujii;Kousuke Miyaji;Koh Johguchi;Kazuhide Higuchi

Frequent Co-Authors

Tomoharu Tanaka
Tomoharu Tanaka Toshiba (Japan)
Takayasu Sakurai
Takayasu Sakurai University of Tokyo
Makoto Takamiya
Makoto Takamiya University of Tokyo
Seiichi Aritome
Seiichi Aritome Chuo University
Toru Tanzawa
Toru Tanzawa Shizuoka University
Ute Zschieschang
Ute Zschieschang Max Planck Institute for Solid State Research
Takao Someya
Takao Someya University of Tokyo
Tsuyoshi Sekitani
Tsuyoshi Sekitani Osaka University
Tomoyuki Yokota
Tomoyuki Yokota University of Tokyo
Hagen Klauk
Hagen Klauk Max Planck Institute for Solid State Research

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