Seiichi Aritome

Research.com Recognitions

• 2014 - IEEE Fellow For contributions to flash memory technologies

Overview

Best Publications

• Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state

  Tetsuo Endoh;Yoshiyuki Tanaka;Seiichi Aritome;Riichiro Shirota

  756
  Citations

• Reliability issues of flash memory cells

  S. Aritome;R. Shirota;G. Hemink;T. Endoh

  375
  Citations

• Non-volatile semiconductor memory device and memory system using the same

  Tomoharu Tanaka;Masaki Momodomi;Hideo Kato;Hiroto Nakai

  223
  Citations

• Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller

  Tetsuo Endoh;Riichiro Shirota;Kazunori Ohuchi;Ryouhei Kirisawa

  200
  Citations

• Semiconductor device and semiconductor integrated circuit having a conductive film on element region

  Yuji Takeuchi;Riichiro Shirota;Seiichi Aritome;Masashi Umemura

  194
  Citations

• Semiconductor memory device comprising multi-level logic value of the threshold voltage

  Seiichi Aritome

  162
  Citations

• Fast and accurate programming method for multi-level NAND EEPROMs

  G.J. Hemink;T. Tanaka;T. Endoh;S. Aritome

  138
  Citations

• Method of manufacturing a non-volatile memory having an element isolation insulation film embedded in the trench

  Takuya Nakamura;Naoki Koido;Hirohisa Iizuka;Kazuhito Narita

  133
  Citations

• Electrically erasable programmable read-only memory with electric field decreasing controller

  Seiichi Aritome;Riichiro Shirota;Ryouhei Kirisawa;Yoshihisa Iwata

  121
  Citations

• Array Architectures for 3-D NAND Flash Memories

  Rino Micheloni;Seiichi Aritome;Luca Crippa

  120
  Citations

• A compact on-chip ECC for low cost flash memories

  T. Tanzawa;T. Tanaka;K. Takeuchi;R. Shirota

  112
  Citations

• A reliable bi-polarity write/erase technology in flash EEPROMs

  S. Aritome;R. Shirota;R. Kirisawa;T. Endoh

  108
  Citations

• A NAND structured cell with a new programming technology for highly reliable 5 V-only flash EEPROM

  R. Kirisawa;S. Aritome;R. Nakayama;T. Endoh

  106
  Citations

• Advanced flash memory technology and trends for file storage application

  S. Aritome

  92
  Citations

• Stress-induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics

  S. Satoh;G. Hemink;K. Hatakeyama;S. Aritome

  81
  Citations

• Nonvolatile semiconductor memory device and manufacture thereof

  Akira Aida;Seiichi Aritome;Hiroaki Hazama;Hirohisa Iizuka

  81
  Citations

• Nonvolatile semiconductor memory device having the reliability of gate insulating film of memory cells enhanced and method for manufacturing the same

  Kazuhiro Shimizu;Seiichi Aritome;Shinji Satoh

  76
  Citations

• Nonvolatile semiconductor memory device and method for manufacturing the same

  Akira Goda;Riichiro Shirota;Kazuhiro Shimizu;Hiroaki Hazama

  74
  Citations

• Non-volatile semiconductor memory device and method for manufacturing the same

  Kazuhiro Shimizu;Seiichi Aritome;Kazuhito Narita

  70
  Citations

• Semiconductor memory device having shallow trench isolation structure

  Hiroshi Watanabe;Yuji Takeuchi;Kazuhiro Shimizu;Seiichi Aritome

  65
  Citations

• Semiconductor memory device on which selective transistors are connected to a plurality of respective memory cell units

  Seiichi Aritome

  65
  Citations