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Akihiro Nitayama

Akihiro Nitayama

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
43
Citations
8187
World Ranking
3875
National Ranking
148

Overview

Akihiro Nitayama is affiliated with Toshiba in Japan, where they conduct research and professional activities. The scientist's work is associated primarily with this industrial and technological environment, which can influence the applied aspects of their research focus.

No specific recent papers, co-authors, or frequent publication venues have been catalogued for Akihiro Nitayama, which indicates either a limited number of publicly indexed publications or a focus on non-academic or proprietary research.

Similarly, there are no recorded book publications or defined main fields, subfields, or main topics of study available for this researcher. This absence suggests that detailed bibliometric information or thematic specializations in academic literature are not available in the provided data.

Akihiro Nitayama is currently active in their professional role, with no records indicating that they are deceased.

Best Publications

  • Bit Cost Scalable Technology with Punch and Plug Process for Ultra High Density Flash Memory

    H. Tanaka;M. Kido;K. Yahashi;M. Oomura

  • Pipe-shaped BiCS flash memory with 16 stacked layers and multi-level-cell operation for ultra high density storage devices

    Ryota Katsumata;Masaru Kito;Yoshiaki Fukuzumi;Masaru Kido

  • Optimal Integration and Characteristics of Vertical Array Devices for Ultra-High Density, Bit-Cost Scalable Flash Memory

    Y. Fukuzumi;Y. Matsuoka;M. Kito;M. Kido

  • Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's

    H. Takato;K. Sunouchi;N. Okabe;A. Nitayama

  • High performance CMOS surrounding gate transistor (SGT) for ultra high density LSIs

    H. Takato;K. Sunouchi;N. Okabe;A. Nitayama

  • Magnetic random access memory and method of manufacturing the same

    Keiji Hosotani;Yoshiaki Asao;Akihiro Nitayama

  • MANUFACTURING METHOD OF A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

    Kito Masaru;Aochi Hideaki;Katsumata Ryota;Nitayama Akihiro

  • A novel circuit technology with surrounding gate transistors (SGT's) for ultra high density DRAM's

    S. Watanabe;K. Tsuchida;D. Takashima;Y. Oowaki

  • A surrounding gate transistor (SGT) cell for 64/256 Mbit DRAMs

    K. Sunouchi;H. Takato;N. Okabe;T. Yamada

  • Floating Body RAM Technology and its Scalability to 32nm Node and Beyond

    T. Shino;N. Kusunoki;T. Higashi;T. Ohsawa

  • Autonomous refresh of floating body cell (FBC)

    T. Ohsawa;R. Fukuda;T. Higashi;K. Fujita

  • Multi-pillar surrounding gate transistor (M-SGT) for compact and high-speed circuits

    A. Nitayama;H. Takato;N. Okabe;K. Sunouchi

  • MOS-type semiconductor integrated circuit device

    Akihiro Nitayama;Hiroshi Takato;Fumio Horiguchi;Fujio Masuoka

  • Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device

    Y. Komori;M. Kido;M. Kito;R. Katsumata

  • Mos semiconductor device

    Fumio Horiguchi;Fujio Masuoka;Akihiro Nitayama;Hiroshi Takatou

  • Optimal device structure for Pipe-shaped BiCS Flash memory for ultra high density storage device with excellent performance and reliability

    Megumi Ishiduki;Yoshiaki Fukuzumi;Ryota Katsumata;Masaru Kito

  • Highly scalable FBC (Floating Body Cell) with 25nm BOX structure for embedded DRAM applications

    T. Shino;I. Higashi;K. Fujita;T. Ohsawa

  • Spread source/drain (SSD) MOSFET using selective silicon growth for 64 Mbit DRAMs

    T. Yamada;S. Samata;H. Takato;Y. Matsushita

  • A 1.6 GB/s DDR2 128 Mb Chain FeRAM With Scalable Octal Bitline and Sensing Schemes

    Hidehiro Shiga;Daisaburo Takashima;Shinichiro Shiratake;Katsuhiko Hoya

  • Nonvolatile semiconductor storage device and method of manufacturing the same

    Masaru Kidoh;Masaru Kito;Ryota Katsumata;Yoshiaki Fukuzumi

Frequent Co-Authors

Hideaki Aochi
Hideaki Aochi Kioxia Corporation
Takashi Ohsawa
Takashi Ohsawa Waseda University
Jeffrey P. Gambino
Jeffrey P. Gambino ON Semiconductor (United States)

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