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Akihiro Nitayama

Akihiro Nitayama

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
43
Citations
8187
World Ranking
3875
National Ranking
148

Akihiro Nitayama publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Akihiro Nitayama sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 151 publications — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Akihiro Nitayama D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Akihiro Nitayama sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 43 D-Index — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Akihiro Nitayama is affiliated with Toshiba in Japan, where they conduct research and professional activities. The scientist's work is associated primarily with this industrial and technological environment, which can influence the applied aspects of their research focus.

No specific recent papers, co-authors, or frequent publication venues have been catalogued for Akihiro Nitayama, which indicates either a limited number of publicly indexed publications or a focus on non-academic or proprietary research.

Similarly, there are no recorded book publications or defined main fields, subfields, or main topics of study available for this researcher. This absence suggests that detailed bibliometric information or thematic specializations in academic literature are not available in the provided data.

Akihiro Nitayama is currently active in their professional role, with no records indicating that they are deceased.

Best Publications

  • Bit Cost Scalable Technology with Punch and Plug Process for Ultra High Density Flash Memory

    H. Tanaka;M. Kido;K. Yahashi;M. Oomura

  • Pipe-shaped BiCS flash memory with 16 stacked layers and multi-level-cell operation for ultra high density storage devices

    Ryota Katsumata;Masaru Kito;Yoshiaki Fukuzumi;Masaru Kido

  • Optimal Integration and Characteristics of Vertical Array Devices for Ultra-High Density, Bit-Cost Scalable Flash Memory

    Y. Fukuzumi;Y. Matsuoka;M. Kito;M. Kido

  • Impact of surrounding gate transistor (SGT) for ultra-high-density LSI's

    H. Takato;K. Sunouchi;N. Okabe;A. Nitayama

  • High performance CMOS surrounding gate transistor (SGT) for ultra high density LSIs

    H. Takato;K. Sunouchi;N. Okabe;A. Nitayama

  • Magnetic random access memory and method of manufacturing the same

    Keiji Hosotani;Yoshiaki Asao;Akihiro Nitayama

  • MANUFACTURING METHOD OF A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

    Kito Masaru;Aochi Hideaki;Katsumata Ryota;Nitayama Akihiro

  • A novel circuit technology with surrounding gate transistors (SGT's) for ultra high density DRAM's

    S. Watanabe;K. Tsuchida;D. Takashima;Y. Oowaki

  • A surrounding gate transistor (SGT) cell for 64/256 Mbit DRAMs

    K. Sunouchi;H. Takato;N. Okabe;T. Yamada

  • Floating Body RAM Technology and its Scalability to 32nm Node and Beyond

    T. Shino;N. Kusunoki;T. Higashi;T. Ohsawa

  • Autonomous refresh of floating body cell (FBC)

    T. Ohsawa;R. Fukuda;T. Higashi;K. Fujita

  • Multi-pillar surrounding gate transistor (M-SGT) for compact and high-speed circuits

    A. Nitayama;H. Takato;N. Okabe;K. Sunouchi

  • MOS-type semiconductor integrated circuit device

    Akihiro Nitayama;Hiroshi Takato;Fumio Horiguchi;Fujio Masuoka

  • Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device

    Y. Komori;M. Kido;M. Kito;R. Katsumata

  • Mos semiconductor device

    Fumio Horiguchi;Fujio Masuoka;Akihiro Nitayama;Hiroshi Takatou

  • Optimal device structure for Pipe-shaped BiCS Flash memory for ultra high density storage device with excellent performance and reliability

    Megumi Ishiduki;Yoshiaki Fukuzumi;Ryota Katsumata;Masaru Kito

  • Highly scalable FBC (Floating Body Cell) with 25nm BOX structure for embedded DRAM applications

    T. Shino;I. Higashi;K. Fujita;T. Ohsawa

  • Spread source/drain (SSD) MOSFET using selective silicon growth for 64 Mbit DRAMs

    T. Yamada;S. Samata;H. Takato;Y. Matsushita

  • A 1.6 GB/s DDR2 128 Mb Chain FeRAM With Scalable Octal Bitline and Sensing Schemes

    Hidehiro Shiga;Daisaburo Takashima;Shinichiro Shiratake;Katsuhiko Hoya

  • Nonvolatile semiconductor storage device and method of manufacturing the same

    Masaru Kidoh;Masaru Kito;Ryota Katsumata;Yoshiaki Fukuzumi

Frequent Co-Authors

Hideaki Aochi
Hideaki Aochi Kioxia Corporation
Takashi Ohsawa
Takashi Ohsawa Waseda University
Seiichi Aritome
Seiichi Aritome Chuo University
Jeffrey P. Gambino
Jeffrey P. Gambino ON Semiconductor (United States)

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Related Online Degrees & Career Pathways

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