World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
64
Citations
13485
World Ranking
1322
National Ranking
544

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Transistor
  • Optoelectronics

Optoelectronics, Electrical engineering, Trench, Layer and Silicon on insulator are his primary areas of study. His work deals with themes such as Electrical conductor, Transistor and Capacitor, which intersect with Optoelectronics. His work in Capacitor addresses issues such as Dopant, which are connected to fields such as Nanotechnology.

His Trench study combines topics from a wide range of disciplines, such as Structural engineering, Semiconductor device and Conductor. His research integrates issues of Threshold voltage, PMOS logic, Semiconductor and Dielectric in his study of Semiconductor device. The various areas that Jack A. Mandelman examines in his Silicon on insulator study include Diode, Insulator and Voltage.

His most cited work include:

  • Stress inducing spacers (178 citations)
  • Low-K gate spacers by fluorine implantation (171 citations)
  • Vertical MOSFET SRAM cell (162 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, Electrical engineering, Trench, Layer and Transistor. His studies deal with areas such as Substrate and Capacitor as well as Optoelectronics. His Electrical engineering study combines topics in areas such as Silicon on insulator and Conductor.

His work investigates the relationship between Conductor and topics such as Electrical conductor that intersect with problems in Integrated circuit. In his study, which falls under the umbrella issue of Trench, Composite material is strongly linked to Dielectric. His Layer study incorporates themes from Electronic engineering and Silicon.

He most often published in these fields:

  • Optoelectronics (74.64%)
  • Electrical engineering (42.75%)
  • Trench (34.78%)

What were the highlights of his more recent work (between 2005-2013)?

  • Optoelectronics (74.64%)
  • Electrical engineering (42.75%)
  • Semiconductor (14.31%)

In recent papers he was focusing on the following fields of study:

Jack A. Mandelman spends much of his time researching Optoelectronics, Electrical engineering, Semiconductor, Dielectric and Layer. Jack A. Mandelman mostly deals with Silicon on insulator in his studies of Optoelectronics. His studies examine the connections between Electrical engineering and genetics, as well as such issues in Trench, with regards to Substrate.

His work focuses on many connections between Semiconductor and other disciplines, such as Doping, that overlap with his field of interest in CMOS, Shallow trench isolation, Electrical conductor and Light energy. His Dielectric research is multidisciplinary, incorporating perspectives in Structural engineering, Conformal map and Composite material, Void. Jack A. Mandelman has included themes like Body region and Fuse in his Layer study.

Between 2005 and 2013, his most popular works were:

  • Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer (151 citations)
  • Bulk FinFET device (87 citations)
  • Tunneling effect transistor with self-aligned gate (84 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Transistor

His primary areas of study are Optoelectronics, Semiconductor, Electrical engineering, Dielectric and Electronic engineering. The concepts of his Optoelectronics study are interwoven with issues in Layer, Trench, Substrate and Semiconductor device. His Trench research includes themes of Substrate and Dopant.

The study incorporates disciplines such as Shallow trench isolation, Insulator and Photon in addition to Semiconductor. His Dielectric research is multidisciplinary, incorporating elements of Composite material, Void and Gate dielectric. In general Electronic engineering study, his work on Operating point often relates to the realm of Sensitivity, thereby connecting several areas of interest.

Best Publications

  • Challenges and future directions for the scaling of dynamic random-access memory (DRAM)

    J. A. Mandelman;R. H. Dennard;G. B. Bronner;J. K. DeBrosse

  • VERTICAL MOSFET SRAM CELL WITH SURROUNDED GATE TO OBTAIN IMPROVED TRANSCONDUCTANCE AND EFFICIENCY

    Hsu Louis L;Gluschenenkov Oleg;Mandelman Jack A;Radens Carl J

  • Mixed memory integration with NVRAM, dram and sram cell structures on same substrate

    Fariborz Assaderaghi;Louis Lu-Chen Hsu;Jack A. Mandelman

  • Low-K gate spacers by fluorine implantation

    Jeffrey P. Gambino;Jack Mandelman;William R. Tonti

  • Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer

    Louis Lu-Chen Hsu;Jack A. Mandelman;William R. Tonti;Chih-Chao Yang

  • Body-contacted finfet

    Huilong Zhu;Thomas W. Dyer;Jack A. Mandelman;Werner Rausch

  • Novel structure for folded architecture pillar memory cell

    Furukawa Toshiharu;Hakey Mark C;Holmes Steven J;Horak David

  • Stress leading space layer

    Chadanbalao D;Documach O H;Duoris B B

  • Two-device memory cell on SOI for merged logic and memory applications

    Fariborz Assaderaghi;Bijan Davari;Louis L. Hsu;Jack A. Mandelman

  • Silicon-on-insulator vertical array device trench capacitor DRAM

    Carl J. Radens;Gary B. Bronner;Tze-Chiang Chen;Bijan Davari

  • Field effect transistor with stressed channel and producing method thereof

    Doris Brews B;Zidambarao Dursedi

  • SOI hybrid structure with selective epitaxial growth of silicon

    Toshiharu Furukawa;Jack A. Mandelman;Dan Moy;Byeongju Park

  • Strained finfet cmos device structures

    Bruce B. Doris;Dureseti Chidambarrao;Meikei Ieong;Jack A. Mandelman

  • SHALLOW TRENCH SEPARATOR AND FORMING PROCESS THEREOF

    Akatsu Hiroyuki;Natsul Wesley C;Chenche Chiang;Clein Henz Richard

  • Trench storage dynamic random access memory cell with vertical transfer device

    Toshiharu Furukawa;Mark C. Hakey;David V. Horak;William H. Ma

  • Method for trench capacitor dram cell without floating-well effects

    Jack A. Mandelman;Ramachandra Divakaruni;Carl J. Radens;Stephan Kudelka

  • Shared body and diffusion contact structure and method for fabricating same

    Jack A. Mandelman;Rama Divakaruni;William R. Tonti

  • Method of making corner protected shallow trench field effect transistor

    Jack A. Mandelman;Brian J. Machesney;Hing Wong;Michael M. Armacost

  • Fabrication process and structure for a contacted-body silicon-on-insulator dynamic random access memory

    Gary B. Bronner;John K. DeBrosse;Jack A. Mandelman

  • Tunneling effect transistor with self-aligned gate

    Roger A. Booth;Kangguo Cheng;Jack A. Mandelman

Frequent Co-Authors

Louis L. Hsu
Louis L. Hsu IBM (United States)
William R. Tonti
William R. Tonti Institute of Electrical and Electronics Engineers
Carl J. Radens
Carl J. Radens IBM (United States)
Toshiharu Furukawa
Toshiharu Furukawa IBM (United States)
Jeffrey P. Gambino
Jeffrey P. Gambino ON Semiconductor (United States)
Kangguo Cheng
Kangguo Cheng IBM (United States)
Dureseti Chidambarrao
Dureseti Chidambarrao IBM (United States)
Mark C. Hakey
Mark C. Hakey Semivation
David V. Horak
David V. Horak IBM (United States)
Claude L. Bertin
Claude L. Bertin NANTERO INC

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Best Scientists Citing Jack A. Mandelman