World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
64
Citations
13485
World Ranking
1322
National Ranking
545

Jack A. Mandelman publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jack A. Mandelman sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 396 publications — 74th percentile

74% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Jack A. Mandelman D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jack A. Mandelman sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 64 D-Index — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Transistor
  • Optoelectronics

Optoelectronics, Electrical engineering, Trench, Layer and Silicon on insulator are his primary areas of study. His work deals with themes such as Electrical conductor, Transistor and Capacitor, which intersect with Optoelectronics. His work in Capacitor addresses issues such as Dopant, which are connected to fields such as Nanotechnology.

His Trench study combines topics from a wide range of disciplines, such as Structural engineering, Semiconductor device and Conductor. His research integrates issues of Threshold voltage, PMOS logic, Semiconductor and Dielectric in his study of Semiconductor device. The various areas that Jack A. Mandelman examines in his Silicon on insulator study include Diode, Insulator and Voltage.

His most cited work include:

  • Stress inducing spacers (178 citations)
  • Low-K gate spacers by fluorine implantation (171 citations)
  • Vertical MOSFET SRAM cell (162 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, Electrical engineering, Trench, Layer and Transistor. His studies deal with areas such as Substrate and Capacitor as well as Optoelectronics. His Electrical engineering study combines topics in areas such as Silicon on insulator and Conductor.

His work investigates the relationship between Conductor and topics such as Electrical conductor that intersect with problems in Integrated circuit. In his study, which falls under the umbrella issue of Trench, Composite material is strongly linked to Dielectric. His Layer study incorporates themes from Electronic engineering and Silicon.

He most often published in these fields:

  • Optoelectronics (74.64%)
  • Electrical engineering (42.75%)
  • Trench (34.78%)

What were the highlights of his more recent work (between 2005-2013)?

  • Optoelectronics (74.64%)
  • Electrical engineering (42.75%)
  • Semiconductor (14.31%)

In recent papers he was focusing on the following fields of study:

Jack A. Mandelman spends much of his time researching Optoelectronics, Electrical engineering, Semiconductor, Dielectric and Layer. Jack A. Mandelman mostly deals with Silicon on insulator in his studies of Optoelectronics. His studies examine the connections between Electrical engineering and genetics, as well as such issues in Trench, with regards to Substrate.

His work focuses on many connections between Semiconductor and other disciplines, such as Doping, that overlap with his field of interest in CMOS, Shallow trench isolation, Electrical conductor and Light energy. His Dielectric research is multidisciplinary, incorporating perspectives in Structural engineering, Conformal map and Composite material, Void. Jack A. Mandelman has included themes like Body region and Fuse in his Layer study.

Between 2005 and 2013, his most popular works were:

  • Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer (151 citations)
  • Bulk FinFET device (87 citations)
  • Tunneling effect transistor with self-aligned gate (84 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Transistor

His primary areas of study are Optoelectronics, Semiconductor, Electrical engineering, Dielectric and Electronic engineering. The concepts of his Optoelectronics study are interwoven with issues in Layer, Trench, Substrate and Semiconductor device. His Trench research includes themes of Substrate and Dopant.

The study incorporates disciplines such as Shallow trench isolation, Insulator and Photon in addition to Semiconductor. His Dielectric research is multidisciplinary, incorporating elements of Composite material, Void and Gate dielectric. In general Electronic engineering study, his work on Operating point often relates to the realm of Sensitivity, thereby connecting several areas of interest.

Best Publications

  • Challenges and future directions for the scaling of dynamic random-access memory (DRAM)

    J. A. Mandelman;R. H. Dennard;G. B. Bronner;J. K. DeBrosse

  • VERTICAL MOSFET SRAM CELL WITH SURROUNDED GATE TO OBTAIN IMPROVED TRANSCONDUCTANCE AND EFFICIENCY

    Hsu Louis L;Gluschenenkov Oleg;Mandelman Jack A;Radens Carl J

  • Mixed memory integration with NVRAM, dram and sram cell structures on same substrate

    Fariborz Assaderaghi;Louis Lu-Chen Hsu;Jack A. Mandelman

  • Low-K gate spacers by fluorine implantation

    Jeffrey P. Gambino;Jack Mandelman;William R. Tonti

  • Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer

    Louis Lu-Chen Hsu;Jack A. Mandelman;William R. Tonti;Chih-Chao Yang

  • Body-contacted finfet

    Huilong Zhu;Thomas W. Dyer;Jack A. Mandelman;Werner Rausch

  • Novel structure for folded architecture pillar memory cell

    Furukawa Toshiharu;Hakey Mark C;Holmes Steven J;Horak David

  • Stress leading space layer

    Chadanbalao D;Documach O H;Duoris B B

  • Two-device memory cell on SOI for merged logic and memory applications

    Fariborz Assaderaghi;Bijan Davari;Louis L. Hsu;Jack A. Mandelman

  • Silicon-on-insulator vertical array device trench capacitor DRAM

    Carl J. Radens;Gary B. Bronner;Tze-Chiang Chen;Bijan Davari

  • Field effect transistor with stressed channel and producing method thereof

    Doris Brews B;Zidambarao Dursedi

  • SOI hybrid structure with selective epitaxial growth of silicon

    Toshiharu Furukawa;Jack A. Mandelman;Dan Moy;Byeongju Park

  • Strained finfet cmos device structures

    Bruce B. Doris;Dureseti Chidambarrao;Meikei Ieong;Jack A. Mandelman

  • SHALLOW TRENCH SEPARATOR AND FORMING PROCESS THEREOF

    Akatsu Hiroyuki;Natsul Wesley C;Chenche Chiang;Clein Henz Richard

  • Trench storage dynamic random access memory cell with vertical transfer device

    Toshiharu Furukawa;Mark C. Hakey;David V. Horak;William H. Ma

  • Method for trench capacitor dram cell without floating-well effects

    Jack A. Mandelman;Ramachandra Divakaruni;Carl J. Radens;Stephan Kudelka

  • Shared body and diffusion contact structure and method for fabricating same

    Jack A. Mandelman;Rama Divakaruni;William R. Tonti

  • Method of making corner protected shallow trench field effect transistor

    Jack A. Mandelman;Brian J. Machesney;Hing Wong;Michael M. Armacost

  • Fabrication process and structure for a contacted-body silicon-on-insulator dynamic random access memory

    Gary B. Bronner;John K. DeBrosse;Jack A. Mandelman

  • Tunneling effect transistor with self-aligned gate

    Roger A. Booth;Kangguo Cheng;Jack A. Mandelman

Frequent Co-Authors

Louis L. Hsu
Louis L. Hsu IBM (United States)
William R. Tonti
William R. Tonti Institute of Electrical and Electronics Engineers
Carl J. Radens
Carl J. Radens IBM (United States)
Toshiharu Furukawa
Toshiharu Furukawa IBM (United States)
Jeffrey P. Gambino
Jeffrey P. Gambino ON Semiconductor (United States)
Kangguo Cheng
Kangguo Cheng IBM (United States)
Dureseti Chidambarrao
Dureseti Chidambarrao IBM (United States)
Mark C. Hakey
Mark C. Hakey Semivation
David V. Horak
David V. Horak IBM (United States)
Claude L. Bertin
Claude L. Bertin NANTERO INC

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