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Electronics and Electrical Engineering

D-Index
38
Citations
5308
World Ranking
4961
National Ranking
1725

Overview

Oleg Gluschenkov is affiliated with IBM in the United States. Their professional activities are primarily based in the United States, indicating involvement in research or technical work within this geographical context.

No specific recent papers, co-authors, or patterns of frequent publication venues have been documented for Oleg Gluschenkov. Consequently, there is no available information on the titles, venues, or citation counts of any publications.

Similarly, there is no record of book publications attributed to Oleg Gluschenkov, and no detailed fields, subfields, or main topics of study have been enumerated. This limits the ability to characterize their specific research interests or areas of academic focus.

There are also no recorded awards or recognitions associated with Oleg Gluschenkov. The absence of these details means the public record reflects only their institutional affiliation without further attribution to scientific contributions or honors.

This profile reflects a summary based strictly on available structured data and does not infer beyond the documented facts pertaining to Oleg Gluschenkov's academic or scientific footprint.

Best Publications

  • Structure and method of making strained semiconductor CMOS transistors

    Huajie Chen;Dureseti Chidambarrao

  • VERTICAL MOSFET SRAM CELL WITH SURROUNDED GATE TO OBTAIN IMPROVED TRANSCONDUCTANCE AND EFFICIENCY

    Hsu Louis L;Gluschenenkov Oleg;Mandelman Jack A;Radens Carl J

  • Structure and method to improve channel mobility by gate electrode stress modification

    Michael P. Belyansky;Dureseti Chidambarrao;Omer H. Dokumaci;Bruce B. Doris

  • SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

    Chidambarrao Dureseti;Dokumaci Omer H;Gluschenkov Oleg G

  • Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO 2 gate dielectrics

    Min Yang;E.P. Gusev;Meikei Ieong;O. Gluschenkov

  • Structure of vertical strained silicon devices

    Kangguo Cheng;Dureseti Chidambarrao;Rama Divakaruni;Oleg G. Gluschenkov

  • A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

    R. Xie;P. Montanini;K. Akarvardar;N. Tripathi

  • Integrated circuit chip with FETs having mixed body thicknesses and method of manufacture thereof

    Rajiv V. Joshi;Louis C. Hsu;Oleg Gluschenkov

  • Semiconductor gate structure processing involves thickening pad oxide layer of semiconductor gate to specified thickness to provide sacrificial oxide layer on semiconductor gate structure

    Oleg Gluschenkov;Helmut Tews;Mary Weybright

  • High mobility CMOS circuits

    Bruce B. Doris;Oleg G. Gluschenkov;Huilong Zhu

  • Structure and method for mobility enhanced mosfets with unalloyed silicide

    Yaocheng Liu;Dureseti Chidambarrao;Oleg Gluschenkov;Judson R. Holt

  • Silicon device on Si:C-OI and SGOI and method of manufacture

    Dureseti Chidambarrao;Omer H. Dokumaci;Oleg G. Gluschenkov

  • A process for making semiconductor devices and semiconductor devices

    Gluschenkov Oleg G;Cyril Cabral;Omer Dokumaci;Christian Lavoie

  • Semiconductor device structure with active regions having different surface directions

    Bruce B. Doris;Oleg Gluschenkov;Meikei Ieong;Effendi Leobandung

  • Logic circuits having linear and cellular gate transistors

    Victor Wing Chung Chan;Hsing-Jen C. Wann;Shih-Fen Huang;Oleg Gluschenkov

  • Stressed semiconductor device structures having granular semiconductor material

    Bruce B. Doris;Michael P. Belyansky;Diane C. Boyd;Dureseti Chidambarrao

  • High acceptor level doping in silicon germanium

    Mona Abdulkhaleg Ebrish;Oleg Gluschenkov;Shogo Mochizuki;Alexander Reznicek

  • Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric

    Anthony I. Chou;Michael P. Chudzik;Toshiharu Furukawa;Oleg Gluschenkov

  • Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxy

    J. M. Myoung;K. H. Shim;C. Kim;O. Gluschenkov

  • High performance strained cmos devices adn the method thereof

    Doris Bruce B;Gluschenkov Oleg G

Frequent Co-Authors

Bruce B. Doris
Bruce B. Doris IBM (United States)
Dureseti Chidambarrao
Dureseti Chidambarrao IBM (United States)
Huilong Zhu
Huilong Zhu Chinese Academy of Sciences
Alexander Reznicek
Alexander Reznicek IBM (United States)
Carl J. Radens
Carl J. Radens IBM (United States)
Jack A. Mandelman
Jack A. Mandelman Independent Scientist / Consultant, US
Michael P. Chudzik
Michael P. Chudzik IBM (United States)
Diane C. Boyd
Diane C. Boyd IBM (United States)
Christian Lavoie
Christian Lavoie IBM (United States)
Louis L. Hsu
Louis L. Hsu IBM (United States)

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