The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Alexander Reznicek sits on this spectrum.
This scientist: 625 publications — 91st percentile
91% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Alexander Reznicek sits on this spectrum.
This scientist: 31 D-Index — 6th percentile
6% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Alexander Reznicek is affiliated with IBM in the United States, where their research focuses on engineering, particularly within electrical and electronic engineering. Their work encompasses advanced topics in semiconductor technology and device physics, with a concentration on ferroelectric and negative capacitance devices, semiconductor materials and devices, as well as advanced memory and neural computing.
Reznicek's publication record includes contributions to the 2021 IEEE International Electron Devices Meeting (IEDM), which is a notable venue in the field of electronic device research. One highlighted paper authored by their frequent coauthor H. Wu is titled "First Experimental Demonstration of MRAM Data Scrubbing: 80 Mb MRAM with 40 nm junctions for Last Level Cache Applications", published in 2021 at the IEEE International Electron Devices Meeting. This paper has accrued a number of citations, indicating engagement from the research community.
Their network of frequent coauthors includes:
Reznicek's main fields of study integrate both broad engineering concepts and specialized areas, with their work emphasizing Electrical and Electronic Engineering. Substantive research topics they have addressed are:
These topics suggest a focus on the development and experimental validation of innovative device architectures and materials that could impact future computing and memory technologies. The MRAM (Magnetoresistive Random-Access Memory) data scrubbing work exemplifies such experimental studies that align with cutting-edge semiconductor memory research.
K. Cheng;A. Khakifirooz;P. Kulkarni;S. Ponoth
Meikei Ieong;Alexander Reznicek;Min Yang
Meikei Ieong;Shreesh Narasimha;Alexander Reznicek;Kern Rim
K. Cheng;A. Khakifirooz;N. Loubet;S. Luning
Stephen W. Bedell;Joel P. Desouza;Zhibin Ren;Alexander Reznicek
Kangguo Cheng;Bruce B. Doris;Ali Khakifirooz;Alexander Reznicek
Mona Abdulkhaleg Ebrish;Oleg Gluschenkov;Shogo Mochizuki;Alexander Reznicek
Tze-Chiang Chen;Guy M. Cohen;Alexander Reznicek;Devendra K. Sadana
Q. Liu;A. Yagishita;N. Loubet;A. Khakifirooz
Pouya Hashemi;Ali Khakifirooz;Alexander Reznicek
T. Yamashita;V. S. Basker;T. Standaert;C.-C. Yeh
Martin Frank;Alexander Reznicek;Evgeni Gousev;Eduard Cartier
K. L. Saenger;J. P. de Souza;K. E. Fogel;J. A. Ott
K. Cheng;A. Khakifirooz;P. Kulkarni;S. Kanakasabapathy
Karthik Balakrishnan;Kangguo Cheng;Pouya Hashemi;Alexander Reznicek
Alexander Reznicek
Ali Khakifirooz;Thomas N. Adam;Kangguo Cheng;Alexander Reznicek
Kangguo Cheng;Pouya Hashemi;Ali Khakifirooz;Alexander Reznicek
Thomas N. Adam;Kangguo Cheng;Ali Khakifirooz;Alexander Reznicek
Alexander Reznicek;Thomas N. Adam;Kangguo Cheng;Ali Khakifirooz
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