D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 39 Citations 9,852 254 World Ranking 2862 National Ranking 1129

Research.com Recognitions

Awards & Achievements

1993 - Member of the National Academy of Engineering For contributions to advanced bipolar device technology and theory and to the understanding of hot-electrol effects in metal-oxide semidconductor devices.

1987 - IEEE Fellow For contributions to understanding hot-electron effects on MOSFET devices, and advances in bipolar technology.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Electrical engineering

His primary areas of investigation include Optoelectronics, Electrical engineering, Silicon, Bipolar junction transistor and Silicon on insulator. His Optoelectronics study incorporates themes from Electronic circuit and Transistor, Substrate, Gate oxide, Voltage. His work in Electronic circuit tackles topics such as Very-large-scale integration which are related to areas like Scale and Microelectronics.

His Electrical engineering research is multidisciplinary, incorporating elements of Trench, Substrate and Communication channel. The Silicon study combines topics in areas such as Electronic engineering, MOSFET, Shallow trench isolation and Analytical chemistry. His study looks at the relationship between Bipolar junction transistor and fields such as Common emitter, as well as how they intersect with chemical problems.

His most cited work include:

  • Fundamentals of Modern VLSI Devices (2171 citations)
  • 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints (227 citations)
  • Effect of emitter contact on current gain of silicon bipolar devices (196 citations)

What are the main themes of his work throughout his whole career to date?

Tak H. Ning mostly deals with Optoelectronics, Electrical engineering, Bipolar junction transistor, Transistor and Common emitter. The study incorporates disciplines such as Layer and Heterostructure-emitter bipolar transistor in addition to Optoelectronics. His work on Electrical engineering deals in particular with CMOS, Electronic circuit, Field-effect transistor, Voltage and MOSFET.

His Ring oscillator study in the realm of CMOS connects with subjects such as Scaling. His research on Bipolar junction transistor also deals with topics like

  • Electronic engineering, which have a strong connection to Polysilicon depletion effect and Silicide,
  • Silicon that connect with fields like Analytical chemistry. In his research, Dielectric is intimately related to Substrate, which falls under the overarching field of Transistor.

He most often published in these fields:

  • Optoelectronics (74.82%)
  • Electrical engineering (42.45%)
  • Bipolar junction transistor (39.57%)

What were the highlights of his more recent work (between 2012-2021)?

  • Optoelectronics (74.82%)
  • Bipolar junction transistor (39.57%)
  • Transistor (28.06%)

In recent papers he was focusing on the following fields of study:

His scientific interests lie mostly in Optoelectronics, Bipolar junction transistor, Transistor, Common emitter and Semiconductor. His Optoelectronics study combines topics in areas such as Layer, Substrate and Epitaxy. His studies deal with areas such as Electrical conductor and Electronic engineering as well as Layer.

His Bipolar junction transistor research is included under the broader classification of Electrical engineering. The various areas that Tak H. Ning examines in his Transistor study include Fin, Terminal, Semiconductor device and EEPROM. His research integrates issues of Field-effect transistor, Trench and Communication channel in his study of Semiconductor.

Between 2012 and 2021, his most popular works were:

  • Vertical transistor with air-gap spacer (96 citations)
  • Junction field effect transistor with an epitaxially grown gate structure (68 citations)
  • On the Performance and Scaling of Symmetric Lateral Bipolar Transistors on SOI (43 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Integrated circuit

The scientist’s investigation covers issues in Optoelectronics, Bipolar junction transistor, Semiconductor, Electrical engineering and Heterostructure-emitter bipolar transistor. His Optoelectronics study integrates concerns from other disciplines, such as Transistor and Substrate. His Bipolar junction transistor study integrates concerns from other disciplines, such as BiCMOS, CMOS, Layer, Integrated injection logic and Signal.

His study in Semiconductor is interdisciplinary in nature, drawing from both Fin, Electronic engineering, Epitaxy and Field-effect transistor. His Electronic engineering research includes themes of Gate oxide and Charge carrier. He focuses mostly in the field of Heterostructure-emitter bipolar transistor, narrowing it down to topics relating to Current injection technique and, in certain cases, Bipolar transistor biasing.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Fundamentals of Modern VLSI Devices

Yuan Taur;Tak H. Ning.
(2016)

4340 Citations

1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints

T.H. Ning;P.W. Cook;R.H. Dennard;C.M. Osburn.
IEEE Transactions on Electron Devices (1979)

347 Citations

Effect of emitter contact on current gain of silicon bipolar devices

T.H. Ning;R.D. Isaac.
IEEE Transactions on Electron Devices (1980)

309 Citations

Hot-electron emission in N-channel IGFET's

P.E. Cottrell;R.R. Troutman;T.H. Ning.
IEEE Transactions on Electron Devices (1979)

252 Citations

Method for determining the emitter and base series resistances of bipolar transistors

T.H. Ning;D.D. Tang.
IEEE Transactions on Electron Devices (1984)

224 Citations

Self-aligned bipolar transistors for high-performance and low-power-delay VLSI

T.H. Ning;R.D. Isaac;P.M. Solomon;D.D.-L. Tang.
IEEE Transactions on Electron Devices (1981)

171 Citations

Utilizing polysilicon diffusion sources and special masking techniques

Hiyungu Ningu Tatsuku;Nien Yu Wa.
(1978)

167 Citations

Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS

Dexiong Ning.
(2001)

160 Citations

Method for Fabricating Super-Steep Retrograde Well Mosfet on SOI or Bulk Silicon Substrate, and Device Fabricated in Accordance with the Method

Jin Cai;Amlan Majumdar;Tak Hung Ning;Zhibin Ren.
(2007)

157 Citations

Electron trapping in SiO2 due to electron‐beam deposition of aluminum

Tak H. Ning.
Journal of Applied Physics (1978)

153 Citations

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