World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
50
Citations
12274
World Ranking
2758
National Ranking
1050

Research.com Recognitions

  • 1997 - Fellow of American Physical Society (APS) Citation For outstanding contributions to the understanding of hot electron effects in MOSFET devices and advances in bipolar technology
  • 1993 - Member of the National Academy of Engineering For contributions to advanced bipolar device technology and theory and to the understanding of hot-electrol effects in metal-oxide semidconductor devices.
  • 1987 - IEEE Fellow For contributions to understanding hot-electron effects on MOSFET devices, and advances in bipolar technology.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Electrical engineering

His primary areas of investigation include Optoelectronics, Electrical engineering, Silicon, Bipolar junction transistor and Silicon on insulator. His Optoelectronics study incorporates themes from Electronic circuit and Transistor, Substrate, Gate oxide, Voltage. His work in Electronic circuit tackles topics such as Very-large-scale integration which are related to areas like Scale and Microelectronics.

His Electrical engineering research is multidisciplinary, incorporating elements of Trench, Substrate and Communication channel. The Silicon study combines topics in areas such as Electronic engineering, MOSFET, Shallow trench isolation and Analytical chemistry. His study looks at the relationship between Bipolar junction transistor and fields such as Common emitter, as well as how they intersect with chemical problems.

His most cited work include:

  • Fundamentals of Modern VLSI Devices (2171 citations)
  • 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints (227 citations)
  • Effect of emitter contact on current gain of silicon bipolar devices (196 citations)

What are the main themes of his work throughout his whole career to date?

Tak H. Ning mostly deals with Optoelectronics, Electrical engineering, Bipolar junction transistor, Transistor and Common emitter. The study incorporates disciplines such as Layer and Heterostructure-emitter bipolar transistor in addition to Optoelectronics. His work on Electrical engineering deals in particular with CMOS, Electronic circuit, Field-effect transistor, Voltage and MOSFET.

His Ring oscillator study in the realm of CMOS connects with subjects such as Scaling. His research on Bipolar junction transistor also deals with topics like

  • Electronic engineering, which have a strong connection to Polysilicon depletion effect and Silicide,
  • Silicon that connect with fields like Analytical chemistry. In his research, Dielectric is intimately related to Substrate, which falls under the overarching field of Transistor.

He most often published in these fields:

  • Optoelectronics (74.82%)
  • Electrical engineering (42.45%)
  • Bipolar junction transistor (39.57%)

What were the highlights of his more recent work (between 2012-2021)?

  • Optoelectronics (74.82%)
  • Bipolar junction transistor (39.57%)
  • Transistor (28.06%)

In recent papers he was focusing on the following fields of study:

His scientific interests lie mostly in Optoelectronics, Bipolar junction transistor, Transistor, Common emitter and Semiconductor. His Optoelectronics study combines topics in areas such as Layer, Substrate and Epitaxy. His studies deal with areas such as Electrical conductor and Electronic engineering as well as Layer.

His Bipolar junction transistor research is included under the broader classification of Electrical engineering. The various areas that Tak H. Ning examines in his Transistor study include Fin, Terminal, Semiconductor device and EEPROM. His research integrates issues of Field-effect transistor, Trench and Communication channel in his study of Semiconductor.

Between 2012 and 2021, his most popular works were:

  • Vertical transistor with air-gap spacer (96 citations)
  • Junction field effect transistor with an epitaxially grown gate structure (68 citations)
  • On the Performance and Scaling of Symmetric Lateral Bipolar Transistors on SOI (43 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Integrated circuit

The scientist’s investigation covers issues in Optoelectronics, Bipolar junction transistor, Semiconductor, Electrical engineering and Heterostructure-emitter bipolar transistor. His Optoelectronics study integrates concerns from other disciplines, such as Transistor and Substrate. His Bipolar junction transistor study integrates concerns from other disciplines, such as BiCMOS, CMOS, Layer, Integrated injection logic and Signal.

His study in Semiconductor is interdisciplinary in nature, drawing from both Fin, Electronic engineering, Epitaxy and Field-effect transistor. His Electronic engineering research includes themes of Gate oxide and Charge carrier. He focuses mostly in the field of Heterostructure-emitter bipolar transistor, narrowing it down to topics relating to Current injection technique and, in certain cases, Bipolar transistor biasing.

Best Publications

  • Fundamentals of Modern VLSI Devices

    Yuan Taur;Tak H. Ning

  • 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints

    T.H. Ning;P.W. Cook;R.H. Dennard;C.M. Osburn

  • Effect of emitter contact on current gain of silicon bipolar devices

    T.H. Ning;R.D. Isaac

  • Emission probability of hot electrons from silicon into silicon dioxide

    Unknown

  • Hot-electron emission in N-channel IGFET's

    P.E. Cottrell;R.R. Troutman;T.H. Ning

  • Method for determining the emitter and base series resistances of bipolar transistors

    T.H. Ning;D.D. Tang

  • Self-aligned bipolar transistors for high-performance and low-power-delay VLSI

    T.H. Ning;R.D. Isaac;P.M. Solomon;D.D.-L. Tang

  • Electron trapping in SiO2 due to electron‐beam deposition of aluminum

    Tak H. Ning

  • Method for Fabricating Super-Steep Retrograde Well Mosfet on SOI or Bulk Silicon Substrate, and Device Fabricated in Accordance with the Method

    Jin Cai;Amlan Majumdar;Tak Hung Ning;Zhibin Ren

  • SOI SiGe-base lateral bipolar junction transistor

    Tak H. Ning;Kevin K. Chan;Marwan H. Khater

  • Hot-electron emission from silicon into silicon dioxide

    Unknown

  • High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET

    K. Cheng;A. Khakifirooz;N. Loubet;S. Luning

  • Intralevel decoupling capacitor, method of manufacture and testing circuit of the same

    Kerry Bernstein;John A. Bracchitta;William J. Cote;Tak H. Ning

  • FET and/or bipolar devices formed in thin vertical silicon on insulator (SOI) structures

    Tak Hung Ning;Ben Song Wu

  • A room temperature 0.1 /spl mu/m CMOS on SOI

    G.G. Shahidi;C.A. Anderson;B.A. Chappell;T.I. Chappell

  • Theory of Scattering of Electrons in a Nondegenerate-Semiconductor-Surface Inversion Layer by Surface-Oxide Charges

    T. H. Ning;C. T. Sah

  • Vertical transistor with air-gap spacer

    Kangguo Cheng;Tak H. Ning

  • Dynamic ram cell with MOS trench capacitor in CMOS

    Nicky C. Lu;Tak H. Ning;Lewis M. Terman

  • Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing

    G. Shahidi;B. Davari;Y. Taur;J. Warnock

  • Junction field effect transistor with an epitaxially grown gate structure

    Tak H. Ning;Kangguo Cheng;Ali Khakifirooz;Pranita Kerber

  • Effect of electron trapping on IGFET characteristics

    Unknown

  • A substrate-plate trench-capacitor (SPT) memory cell for dynamic RAM's

    N.C. Lu;P.E. Cottrell;W.J. Craig;S. Dash

  • Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface.

    Sufi Zafar;Christopher D’Emic;Ali Afzali;Benjamin Fletcher

Frequent Co-Authors

Ghavam G. Shahidi
Ghavam G. Shahidi IBM (United States)
Kevin K. Chan
Kevin K. Chan IBM (United States)
Sufi Zafar
Sufi Zafar IBM (United States)
Alexander Reznicek
Alexander Reznicek IBM (United States)
Wilfried Haensch
Wilfried Haensch Argonne National Laboratory
Robert H. Dennard
Robert H. Dennard IBM (United States)
Yuan Taur
Yuan Taur University of California, San Diego
Devendra K. Sadana
Devendra K. Sadana IBM (United States)
Paul M. Solomon
Paul M. Solomon IBM (United States)
Kangguo Cheng
Kangguo Cheng IBM (United States)

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For those interested in Electronics and Electrical Engineering, expanding skills through complementary degrees can open new career opportunities. Professionals often enhance their expertise by pursuing online accelerated project management degree programs, which provide valuable leadership and organizational skills essential for managing technical projects efficiently.

Students looking to strengthen their management credentials might consider a bachelor project management program. These programs are designed to equip learners with practical skills in planning, executing, and overseeing engineering projects from start to finish.

Many working adults face time constraints but still want to advance their education. In this context, accelerated online degree programs for working adults offer flexible and efficient pathways to obtain degrees without compromising professional responsibilities.

Additionally, those interested in teaching or training within technical fields might explore the best online master's for teaching to combine engineering expertise with instructional design. This blend can lead to rewarding careers in educational technology and technical training.

Best Scientists Citing Tak H. Ning

Trending Scientists

Recently Published Articles