1993 - Member of the National Academy of Engineering For contributions to advanced bipolar device technology and theory and to the understanding of hot-electrol effects in metal-oxide semidconductor devices.
1987 - IEEE Fellow For contributions to understanding hot-electron effects on MOSFET devices, and advances in bipolar technology.
His primary areas of investigation include Optoelectronics, Electrical engineering, Silicon, Bipolar junction transistor and Silicon on insulator. His Optoelectronics study incorporates themes from Electronic circuit and Transistor, Substrate, Gate oxide, Voltage. His work in Electronic circuit tackles topics such as Very-large-scale integration which are related to areas like Scale and Microelectronics.
His Electrical engineering research is multidisciplinary, incorporating elements of Trench, Substrate and Communication channel. The Silicon study combines topics in areas such as Electronic engineering, MOSFET, Shallow trench isolation and Analytical chemistry. His study looks at the relationship between Bipolar junction transistor and fields such as Common emitter, as well as how they intersect with chemical problems.
Tak H. Ning mostly deals with Optoelectronics, Electrical engineering, Bipolar junction transistor, Transistor and Common emitter. The study incorporates disciplines such as Layer and Heterostructure-emitter bipolar transistor in addition to Optoelectronics. His work on Electrical engineering deals in particular with CMOS, Electronic circuit, Field-effect transistor, Voltage and MOSFET.
His Ring oscillator study in the realm of CMOS connects with subjects such as Scaling. His research on Bipolar junction transistor also deals with topics like
His scientific interests lie mostly in Optoelectronics, Bipolar junction transistor, Transistor, Common emitter and Semiconductor. His Optoelectronics study combines topics in areas such as Layer, Substrate and Epitaxy. His studies deal with areas such as Electrical conductor and Electronic engineering as well as Layer.
His Bipolar junction transistor research is included under the broader classification of Electrical engineering. The various areas that Tak H. Ning examines in his Transistor study include Fin, Terminal, Semiconductor device and EEPROM. His research integrates issues of Field-effect transistor, Trench and Communication channel in his study of Semiconductor.
The scientist’s investigation covers issues in Optoelectronics, Bipolar junction transistor, Semiconductor, Electrical engineering and Heterostructure-emitter bipolar transistor. His Optoelectronics study integrates concerns from other disciplines, such as Transistor and Substrate. His Bipolar junction transistor study integrates concerns from other disciplines, such as BiCMOS, CMOS, Layer, Integrated injection logic and Signal.
His study in Semiconductor is interdisciplinary in nature, drawing from both Fin, Electronic engineering, Epitaxy and Field-effect transistor. His Electronic engineering research includes themes of Gate oxide and Charge carrier. He focuses mostly in the field of Heterostructure-emitter bipolar transistor, narrowing it down to topics relating to Current injection technique and, in certain cases, Bipolar transistor biasing.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Fundamentals of Modern VLSI Devices
Yuan Taur;Tak H. Ning.
1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints
T.H. Ning;P.W. Cook;R.H. Dennard;C.M. Osburn.
IEEE Transactions on Electron Devices (1979)
Effect of emitter contact on current gain of silicon bipolar devices
T.H. Ning;R.D. Isaac.
IEEE Transactions on Electron Devices (1980)
Hot-electron emission in N-channel IGFET's
P.E. Cottrell;R.R. Troutman;T.H. Ning.
IEEE Transactions on Electron Devices (1979)
Method for determining the emitter and base series resistances of bipolar transistors
T.H. Ning;D.D. Tang.
IEEE Transactions on Electron Devices (1984)
Self-aligned bipolar transistors for high-performance and low-power-delay VLSI
T.H. Ning;R.D. Isaac;P.M. Solomon;D.D.-L. Tang.
IEEE Transactions on Electron Devices (1981)
Utilizing polysilicon diffusion sources and special masking techniques
Hiyungu Ningu Tatsuku;Nien Yu Wa.
Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS
Method for Fabricating Super-Steep Retrograde Well Mosfet on SOI or Bulk Silicon Substrate, and Device Fabricated in Accordance with the Method
Jin Cai;Amlan Majumdar;Tak Hung Ning;Zhibin Ren.
Electron trapping in SiO2 due to electron‐beam deposition of aluminum
Tak H. Ning.
Journal of Applied Physics (1978)
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