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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 50 2758 2643 1051 980 301 12274

Tak H. Ning publications per year

The chart shows the history of publications by Tak H. Ning between 1970 and 2021, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Tak H. Ning published across 52 years, from 1970 to 2021, averaging 5.9 papers a year. Output peaked at 30 publications in 2016. 8 of the 307 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1970 to 2021. Vertical axis: number of publications, 0 to 30. Peak 30 publications in 2016. 1970: 1 publication 1971: 4 publications 1972: 3 publications 1973: 0 publications 1974: 2 publications 1975: 1 publication 1976: 5 publications 1977: 4 publications 1978: 6 publications 1979: 10 publications 1980: 7 publications 1981: 2 publications 1982: 2 publications 1983: 2 publications 1984: 2 publications 1985: 3 publications 1986: 7 publications 1987: 7 publications 1988: 4 publications 1989: 10 publications 1990: 5 publications 1991: 4 publications 1992: 5 publications 1993: 5 publications 1994: 3 publications 1995: 5 publications 1996: 2 publications 1997: 2 publications 1998: 3 publications 1999: 0 publications 2000: 2 publications 2001: 2 publications 2002: 6 publications 2003: 7 publications 2004: 6 publications 2005: 6 publications 2006: 3 publications 2007: 11 publications 2008: 6 publications 2009: 8 publications 2010: 7 publications 2011: 11 publications 2012: 12 publications 2013: 8 publications 2014: 11 publications 2015: 17 publications 2016: 30 publications 2017: 10 publications 2018: 9 publications 2019: 11 publications 2020: 6 publications 2021: 2 publications
1970 2021

307 publications in total across all disciplines

View publications per year as a table
Tak H. Ning: publications per year, 1970 to 2021
Year Publications
1970 1
1971 4
1972 3
1973 0
1974 2
1975 1
1976 5
1977 4
1978 6
1979 10
1980 7
1981 2
1982 2
1983 2
1984 2
1985 3
1986 7
1987 7
1988 4
1989 10
1990 5
1991 4
1992 5
1993 5
1994 3
1995 5
1996 2
1997 2
1998 3
1999 0
2000 2
2001 2
2002 6
2003 7
2004 6
2005 6
2006 3
2007 11
2008 6
2009 8
2010 7
2011 11
2012 12
2013 8
2014 11
2015 17
2016 30
2017 10
2018 9
2019 11
2020 6
2021 2
Total 307
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Tak H. Ning publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Tak H. Ning sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 294–313 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 301 publications — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300 301
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Tak H. Ning D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Tak H. Ning sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 50 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 50 D-Index — 60th percentile

60% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141 50
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Research.com Recognitions

  • 1997 - Fellow of American Physical Society (APS) Citation For outstanding contributions to the understanding of hot electron effects in MOSFET devices and advances in bipolar technology
  • 1993 - Member of the National Academy of Engineering For contributions to advanced bipolar device technology and theory and to the understanding of hot-electrol effects in metal-oxide semidconductor devices.
  • 1987 - IEEE Fellow For contributions to understanding hot-electron effects on MOSFET devices, and advances in bipolar technology.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Electrical engineering

His primary areas of investigation include Optoelectronics, Electrical engineering, Silicon, Bipolar junction transistor and Silicon on insulator. His Optoelectronics study incorporates themes from Electronic circuit and Transistor, Substrate, Gate oxide, Voltage. His work in Electronic circuit tackles topics such as Very-large-scale integration which are related to areas like Scale and Microelectronics.

His Electrical engineering research is multidisciplinary, incorporating elements of Trench, Substrate and Communication channel. The Silicon study combines topics in areas such as Electronic engineering, MOSFET, Shallow trench isolation and Analytical chemistry. His study looks at the relationship between Bipolar junction transistor and fields such as Common emitter, as well as how they intersect with chemical problems.

His most cited work include:

  • Fundamentals of Modern VLSI Devices (2171 citations)
  • 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints (227 citations)
  • Effect of emitter contact on current gain of silicon bipolar devices (196 citations)

What are the main themes of his work throughout his whole career to date?

Tak H. Ning mostly deals with Optoelectronics, Electrical engineering, Bipolar junction transistor, Transistor and Common emitter. The study incorporates disciplines such as Layer and Heterostructure-emitter bipolar transistor in addition to Optoelectronics. His work on Electrical engineering deals in particular with CMOS, Electronic circuit, Field-effect transistor, Voltage and MOSFET.

His Ring oscillator study in the realm of CMOS connects with subjects such as Scaling. His research on Bipolar junction transistor also deals with topics like

  • Electronic engineering, which have a strong connection to Polysilicon depletion effect and Silicide,
  • Silicon that connect with fields like Analytical chemistry. In his research, Dielectric is intimately related to Substrate, which falls under the overarching field of Transistor.

He most often published in these fields:

  • Optoelectronics (74.82%)
  • Electrical engineering (42.45%)
  • Bipolar junction transistor (39.57%)

What were the highlights of his more recent work (between 2012-2021)?

  • Optoelectronics (74.82%)
  • Bipolar junction transistor (39.57%)
  • Transistor (28.06%)

In recent papers he was focusing on the following fields of study:

His scientific interests lie mostly in Optoelectronics, Bipolar junction transistor, Transistor, Common emitter and Semiconductor. His Optoelectronics study combines topics in areas such as Layer, Substrate and Epitaxy. His studies deal with areas such as Electrical conductor and Electronic engineering as well as Layer.

His Bipolar junction transistor research is included under the broader classification of Electrical engineering. The various areas that Tak H. Ning examines in his Transistor study include Fin, Terminal, Semiconductor device and EEPROM. His research integrates issues of Field-effect transistor, Trench and Communication channel in his study of Semiconductor.

Between 2012 and 2021, his most popular works were:

  • Vertical transistor with air-gap spacer (96 citations)
  • Junction field effect transistor with an epitaxially grown gate structure (68 citations)
  • On the Performance and Scaling of Symmetric Lateral Bipolar Transistors on SOI (43 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Integrated circuit

The scientist’s investigation covers issues in Optoelectronics, Bipolar junction transistor, Semiconductor, Electrical engineering and Heterostructure-emitter bipolar transistor. His Optoelectronics study integrates concerns from other disciplines, such as Transistor and Substrate. His Bipolar junction transistor study integrates concerns from other disciplines, such as BiCMOS, CMOS, Layer, Integrated injection logic and Signal.

His study in Semiconductor is interdisciplinary in nature, drawing from both Fin, Electronic engineering, Epitaxy and Field-effect transistor. His Electronic engineering research includes themes of Gate oxide and Charge carrier. He focuses mostly in the field of Heterostructure-emitter bipolar transistor, narrowing it down to topics relating to Current injection technique and, in certain cases, Bipolar transistor biasing.

Best Publications

  • Fundamentals of Modern VLSI Devices

    Yuan Taur;Tak H. Ning

  • 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints

    T.H. Ning;P.W. Cook;R.H. Dennard;C.M. Osburn

  • Effect of emitter contact on current gain of silicon bipolar devices

    T.H. Ning;R.D. Isaac

  • Emission probability of hot electrons from silicon into silicon dioxide

    Unknown

  • Hot-electron emission in N-channel IGFET's

    P.E. Cottrell;R.R. Troutman;T.H. Ning

  • Method for determining the emitter and base series resistances of bipolar transistors

    T.H. Ning;D.D. Tang

  • Self-aligned bipolar transistors for high-performance and low-power-delay VLSI

    T.H. Ning;R.D. Isaac;P.M. Solomon;D.D.-L. Tang

  • Electron trapping in SiO2 due to electron‐beam deposition of aluminum

    Tak H. Ning

  • Method for Fabricating Super-Steep Retrograde Well Mosfet on SOI or Bulk Silicon Substrate, and Device Fabricated in Accordance with the Method

    Jin Cai;Amlan Majumdar;Tak Hung Ning;Zhibin Ren

  • SOI SiGe-base lateral bipolar junction transistor

    Tak H. Ning;Kevin K. Chan;Marwan H. Khater

  • Hot-electron emission from silicon into silicon dioxide

    Unknown

  • High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET

    K. Cheng;A. Khakifirooz;N. Loubet;S. Luning

  • Intralevel decoupling capacitor, method of manufacture and testing circuit of the same

    Kerry Bernstein;John A. Bracchitta;William J. Cote;Tak H. Ning

  • FET and/or bipolar devices formed in thin vertical silicon on insulator (SOI) structures

    Tak Hung Ning;Ben Song Wu

  • A room temperature 0.1 /spl mu/m CMOS on SOI

    G.G. Shahidi;C.A. Anderson;B.A. Chappell;T.I. Chappell

  • Theory of Scattering of Electrons in a Nondegenerate-Semiconductor-Surface Inversion Layer by Surface-Oxide Charges

    T. H. Ning;C. T. Sah

  • Vertical transistor with air-gap spacer

    Kangguo Cheng;Tak H. Ning

  • Dynamic ram cell with MOS trench capacitor in CMOS

    Nicky C. Lu;Tak H. Ning;Lewis M. Terman

  • Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing

    G. Shahidi;B. Davari;Y. Taur;J. Warnock

  • Junction field effect transistor with an epitaxially grown gate structure

    Tak H. Ning;Kangguo Cheng;Ali Khakifirooz;Pranita Kerber

  • Effect of electron trapping on IGFET characteristics

    Unknown

  • A substrate-plate trench-capacitor (SPT) memory cell for dynamic RAM's

    N.C. Lu;P.E. Cottrell;W.J. Craig;S. Dash

  • Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface.

    Sufi Zafar;Christopher D’Emic;Ali Afzali;Benjamin Fletcher

Frequent Co-Authors

Ghavam G. Shahidi
Ghavam G. Shahidi IBM (United States)
Kevin K. Chan
Kevin K. Chan IBM (United States)
Sufi Zafar
Sufi Zafar IBM (United States)
Alexander Reznicek
Alexander Reznicek IBM (United States)
Wilfried Haensch
Wilfried Haensch Argonne National Laboratory
Robert H. Dennard
Robert H. Dennard IBM (United States)
Yuan Taur
Yuan Taur University of California, San Diego
Devendra K. Sadana
Devendra K. Sadana IBM (United States)
Paul M. Solomon
Paul M. Solomon IBM (United States)
Kangguo Cheng
Kangguo Cheng IBM (United States)

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