World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
51
Citations
15888
World Ranking
2588
National Ranking
986

Research.com Recognitions

  • 2009 - IEEE Medal of Honor For invention of the single transistor Dynamic Random Access Memory and for developing scaling principles for integrated circuits.”
  • 2007 - Benjamin Franklin Medal, Franklin Institute
  • 2001 - IEEE Edison Medal For the invention of the 1-transistor DRAM cell, and contributions to the development of MOSFET device scaling principles.
  • 1984 - Member of the National Academy of Engineering For pioneering work in FET technology, including invention of the one transistor dynamic RAM and contributions to scaling theory.

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Transistor
  • Integrated circuit

Robert H. Dennard spends much of his time researching Electronic engineering, Electrical engineering, Optoelectronics, Silicon on insulator and Capacitance. His Electronic engineering research includes themes of Low voltage, Dram, Transmission line, Chip and Busbar. His work on MOSFET, Voltage, CMOS and Threshold voltage as part of general Electrical engineering study is frequently connected to Scaling, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them.

His Optoelectronics study incorporates themes from Transistor, Substrate and Multiple-emitter transistor. His research integrates issues of Dielectric, Silicon dioxide, Thermal expansion, Dry etching and Nitride in his study of Silicon on insulator. His Capacitance research includes elements of Capacitive coupling, Inductive coupling, Electric power transmission, Resistive touchscreen and Inductance.

His most cited work include:

  • When are transmission-line effects important for on-chip interconnections? (353 citations)
  • Silicon CMOS devices beyond scaling (346 citations)
  • An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches (326 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, Electrical engineering, Electronic engineering, Silicon on insulator and Transistor. His studies deal with areas such as Field-effect transistor, Layer, Substrate and MOSFET as well as Optoelectronics. His work in Voltage, CMOS, Threshold voltage, Sense amplifier and Electronic circuit are all subfields of Electrical engineering research.

Within one scientific family, Robert H. Dennard focuses on topics pertaining to Integrated circuit under Electronic engineering, and may sometimes address concerns connected to Interconnection. His Silicon on insulator research incorporates themes from Wafer, Node, Dielectric, Shallow trench isolation and Insulator. His work carried out in the field of Transistor brings together such families of science as Low voltage and Signal.

He most often published in these fields:

  • Optoelectronics (50.00%)
  • Electrical engineering (39.74%)
  • Electronic engineering (29.49%)

What were the highlights of his more recent work (between 2007-2021)?

  • Optoelectronics (50.00%)
  • Silicon on insulator (21.79%)
  • Layer (16.03%)

In recent papers he was focusing on the following fields of study:

Robert H. Dennard focuses on Optoelectronics, Silicon on insulator, Layer, Electrical engineering and Transistor. His research investigates the link between Optoelectronics and topics such as Communication channel that cross with problems in MOSFET. His Silicon on insulator study combines topics from a wide range of disciplines, such as Node, Dielectric, Inverter, Shallow trench isolation and Insulator.

Many of his studies on Electrical engineering apply to Capacitance as well. When carried out as part of a general Transistor research project, his work on Field-effect transistor and Threshold voltage is frequently linked to work in Conductivity, therefore connecting diverse disciplines of study. Robert H. Dennard usually deals with CMOS and limits it to topics linked to Low voltage and Disturbance voltage.

Between 2007 and 2021, his most popular works were:

  • An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches (326 citations)
  • A fully-integrated switched-capacitor 2∶1 voltage converter with regulation capability and 90% efficiency at 2.3A/mm 2 (131 citations)
  • Self-aligned well implant for improving short channel effects control, parasitic capacitance, and junction leakage (86 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Integrated circuit
  • Transistor

Robert H. Dennard mainly investigates Electrical engineering, Optoelectronics, Layer, Integrated circuit and CMOS. His works in Voltage, Terminal and Signal are all subjects of inquiry into Electrical engineering. Robert H. Dennard has included themes like Transistor and Boron nitride in his Optoelectronics study.

His Integrated circuit research is multidisciplinary, incorporating elements of Dynamic demand, Power electronics and Static random-access memory. His CMOS study frequently draws connections to adjacent fields such as Silicon. His study in Silicon on insulator is interdisciplinary in nature, drawing from both Wafer, Communication channel, Ring oscillator and MOSFET.

Best Publications

  • Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions

    Unknown

  • Device scaling limits of Si MOSFETs and their application dependencies

    D.J. Frank;R.H. Dennard;E. Nowak;P.M. Solomon

  • Stable SRAM cell design for the 32 nm node and beyond

    L. Chang;D.M. Fried;J. Hergenrother;J.W. Sleight

  • Silicon CMOS devices beyond scaling

    W. Haensch;E. J. Nowak;R. H. Dennard;P. M. Solomon

  • An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches

    L. Chang;R.K. Montoye;Y. Nakamura;K.A. Batson

  • CMOS scaling for high performance and low power-the next ten years

    B. Davari;R.H. Dennard;G.G. Shahidi

  • When are transmission-line effects important for on-chip interconnections?

    A. Deutsch;G.V. Kopcsay;P.J. Restle;H.H. Smith

  • Generalized scaling theory and its application to a ¼ micrometer MOSFET design

    Unknown

  • Field-effect transistor memory

    Robert H Dennard

  • 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints

    T.H. Ning;P.W. Cook;R.H. Dennard;C.M. Osburn

  • Challenges and future directions for the scaling of dynamic random-access memory (DRAM)

    J. A. Mandelman;R. H. Dennard;G. B. Bronner;J. K. DeBrosse

  • Practical Strategies for Power-Efficient Computing Technologies

    L. Chang;D.J. Frank;R.K. Montoye;S.J. Koester

  • A fully-integrated switched-capacitor 2∶1 voltage converter with regulation capability and 90% efficiency at 2.3A/mm 2

    Leland Chang;Robert K. Montoye;Brian L. Ji;Alan J. Weger

  • Submicrometer-channel CMOS for low-temperature operation

    J.Y.-C. Sun;Yuan Taur;R.H. Dennard;S.P. Klepner

  • Design of micron MOS switching devices

    R. H. Dennard;F. H. Gaensslen;L. Kuhn;H. N. Yu

  • Modeling and characterization of long on-chip interconnections for high-performance microprocessors

    Unknown

  • Channel profile optimization and device design for low-power high-performance dynamic-threshold MOSFET

    C. Wann;F. Assaderaghi;R. Dennard;Chenming Hu

  • Memory cell having improved read stability, memory array and integrate circuit

    Leland Chang;Kevin Montoye Robert

  • Design and experimental technology for 0.1-µm gate-length low-temperature operation FET's

    G.A. Sai-Halasz;M.R. Wordeman;D.P. Kern;E. Ganin

  • Alpha-Particle-Induced Soft Error Rate in VLSI Circuits

    G.A. Sai-Halasz;M.R. Wordeman;R.H. Dennard

  • Self-aligned well implant for improving short channel effects control, parasitic capacitance, and junction leakage

    Robert H. Dennard;Brian J. Greene;Zhibin Ren;Xinlin Wang

  • 3T1D memory cells using gated diodes and methods of use thereof

    Wing K. Luk;Robert H. Dennard

  • Design of ion-implanted MOSFET's with very small physical dimensions

    Robert H. Dennard;Fritz H. Gaensslen;Hwa-Nien Yu;V. Leo Rideovt

  • When are transmission-line effects important for on-chip interconnections

    A. Deutsch;G.V. Kopcsay;P. Restle;G. Katopis

Frequent Co-Authors

Wilfried Haensch
Wilfried Haensch Argonne National Laboratory
Ghavam G. Shahidi
Ghavam G. Shahidi IBM (United States)
Leland Chang
Leland Chang IBM Research - Thomas J. Watson Research Center
Tak H. Ning
Tak H. Ning IBM (United States)
Yuan Taur
Yuan Taur University of California, San Diego
David J. Frank
David J. Frank IBM (United States)
Bernard S. Meyerson
Bernard S. Meyerson IBM (United States)
Paul W. Coteus
Paul W. Coteus IBM (United States)
Ali Khakifirooz
Ali Khakifirooz Intel (United States)
Mark C. Hakey
Mark C. Hakey Semivation

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