World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
66
Citations
22667
World Ranking
1121
National Ranking
470

Materials Science

D-Index
65
Citations
22269
World Ranking
5507
National Ranking
1428

Yuan Taur publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yuan Taur sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 229 publications — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Yuan Taur D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yuan Taur sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 66 D-Index — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Yuan Taur is affiliated with the University of California, San Diego in the United States. Their research primarily focuses on advances in semiconductor devices and circuit design, with a notable emphasis on silicon carbide semiconductor technologies and related semiconductor materials and devices. The work spans fields of engineering, particularly electrical and electronic engineering.

Their publication record includes research articles, book contributions, and collaborations across various venues and topics. Yuan Taur is associated with several frequent co-authors including T.H. Ning, Marlene James, Narain Arora Silterra, Inc Jagadish, and Santosh Kurinec.

Frequent publication venues for Yuan Taur include:

  • IEEE Journal of Photovoltaics
  • IEEE Transactions on Electron Devices
  • Solid-State Electronics
  • Microelectronic Engineering
  • Cambridge University Press eBooks

Among their recent papers are:

  • On the Log-Linear Inversion-Charge Relation for MOSFET Modeling, 2021, IEEE Transactions on Electron Devices
  • Effects of BOX thickness, silicon thickness, and backgate bias on SCE of ET-SOI MOSFETs, 2021, Microelectronic Engineering
  • Non-GCA modeling of near threshold I-V characteristics of DG MOSFETs, 2020, Solid-State Electronics
  • IEEE Journal of Photovoltaics, 2021, IEEE Journal of Photovoltaics
  • A non-GCA model for ground-plane MOSFETs, 2023, Solid-State Electronics

Yuan Taur also contributed to the book "Fundamentals of Modern VLSI Devices," published by Cambridge University Press in 2021.

Their work covers topics such as:

  • Advancements in Semiconductor Devices and Circuit Design
  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Low-power high-performance VLSI design

Best Publications

  • Fundamentals of Modern VLSI Devices

    Yuan Taur;Tak H. Ning

  • Device scaling limits of Si MOSFETs and their application dependencies

    D.J. Frank;R.H. Dennard;E. Nowak;P.M. Solomon

  • CMOS scaling into the nanometer regime

    Yuan Taur;D.A. Buchanan;Wei Chen;D.J. Frank

  • Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

    S.-H. Lo;D.A. Buchanan;Y. Taur;W. Wang

  • CMOS design near the limit of scaling

    Y. Taur

  • A continuous, analytic drain-current model for DG MOSFETs

    Yuan Taur;Xiaoping Liang;Wei Wang;Huaxin Lu

  • Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs

    Y. Taur

  • Monte Carlo modeling of threshold variation due to dopant fluctuations

    D.J. Frank;Y. Taur;M. Ieong;H.-S.P. Wong

  • An analytical solution to a double-gate MOSFET with undoped body

    Yuan Taur

  • Generalized scale length for two-dimensional effects in MOSFETs

    D.J. Frank;Y. Taur;H.-S.P. Wong

  • Self-aligned (top and bottom) double-gate MOSFET with a 25 nm thick silicon channel

    H.-S.P. Wong;K.K. Chan;Y. Taur

  • A 2-D analytical solution for SCEs in DG MOSFETs

    Xiaoping Liang;Yuan Taur

  • 25 nm CMOS design considerations

    Y. Taur;C.H. Wann;D.J. Frank

  • Three-dimensional "atomistic" simulation of discrete random dopant distribution effects in sub-0.1 /spl mu/m MOSFET's

    Hon-Sum Wong;Yuan Taur

  • SOI CMOS structure

    Wei Chen;Devendra Kumar Sadana;Yuan Taur

  • Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides

    S.-H. Lo;D. A. Buchanan;Y. Taur

  • A new 'shift and ratio' method for MOSFET channel-length extraction

    Y. Taur;D.S. Zicherman;D.R. Lombardi;P.J. Restle

  • An analytic potential model for symmetric and asymmetric DG MOSFETs

    Huaxin Lu;Yuan Taur

  • CMOS devices below 0.1 /spl mu/m: how high will performance go?

    Yuan Taur;E.J. Nowak

  • Explicit Continuous Models for Double-Gate and Surrounding-Gate MOSFETs

    Bo Yu;Huaxin Lu;Minjian Liu;Yuan Taur

Frequent Co-Authors

Peter M. Asbeck
Peter M. Asbeck University of California, San Diego
David J. Frank
David J. Frank IBM (United States)
Paul C. McIntyre
Paul C. McIntyre Stanford University
Keith A. Jenkins
Keith A. Jenkins IBM (United States)
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Tak H. Ning
Tak H. Ning IBM (United States)
Clement Hsingjen Wann
Clement Hsingjen Wann Taiwan Semiconductor Manufacturing Company (Taiwan)
Hanping Chen
Hanping Chen Huazhong University of Science and Technology
Robert H. Dennard
Robert H. Dennard IBM (United States)
Mark J. W. Rodwell
Mark J. W. Rodwell University of California, Santa Barbara

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