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Electronics and Electrical Engineering
USA
2026
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Materials Science
USA
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
150
Citations
85423
World Ranking
17
National Ranking
8

Materials Science

D-Index
144
Citations
75848
World Ranking
205
National Ranking
86

Chenming Hu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Chenming Hu sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 1,288 publications — 99th percentile

99% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Chenming Hu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Chenming Hu sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 150 D-Index — 100th percentile

100% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2026 - Research.com Materials Science in United States Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2025 - Research.com Materials Science in United States Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2022 - Research.com Materials Science in United States Leader Award
  • 2020 - IEEE Medal of Honor For a distinguished career of developing and putting into practice semiconductor models, particularly 3-D device structures, that have helped keep Moore's Law going over many decades.
  • 2015 - Fellow, National Academy of Inventors
  • 2012 - Fellow, The World Academy of Sciences
  • 2011 - Semiconductor Industry Association University Researcher Award
  • 2009 - IEEE Jun-ichi Nishizawa Medal "For technical contributions to MOS device reliability, scaling of CMOS and compact device modeling."
  • 2002 - IEEE Donald O. Pederson Award in Solid-State Circuits "For contributions to MOSFET physics and development of the BSIM model for CMOS circuit simulation."
  • 1998 - Monie A. Ferst Award, Sigma Xi
  • 1997 - Member of the National Academy of Engineering For contributions to the modeling integration-circuit devices and to the reliability and performance of VLSI systems.
  • 1990 - IEEE Fellow For contributions to the understanding of hot-electron effects in MOS devices.

Overview

Chenming Hu is affiliated with the University of California, Berkeley in the United States. Their research primarily focuses on the field of engineering, with a specialization in electrical and electronic engineering.

The scientist has contributed to several main topics in semiconductor research, which include:

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Integrated Circuits and Semiconductor Failure Analysis
  • 3D IC and TSV technologies
  • Thin-Film Transistor Technologies

Chenming Hu's publications are concentrated in venues such as the Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials. The scientist's recently documented paper is titled "Effect of Dielectric Layer Scheme for High-Quality Silicon Channel in Monolithic 3DIC," published in 2020 within this venue.

The list of frequent co-authors collaborating with Chenming Hu includes:

  • Yogesh Singh Chauhan
  • Girish Pahwa
  • Avirup Dasgupta
  • Darsen D. Lu
  • Sriramkumar Venugopalan

Chenming Hu's awards and recognitions comprise several notable honors:

  • IEEE Medal of Honor (2020): For a distinguished career developing semiconductor models and 3-D device structures facilitating Moore's Law
  • Fellow, National Academy of Inventors (2015)
  • Fellow, The World Academy of Sciences (2012)
  • Semiconductor Industry Association University Researcher Award (2011)
  • IEEE Jun-ichi Nishizawa Medal (2009): For contributions to MOS device reliability, CMOS scaling, and device modeling
  • IEEE Donald O. Pederson Award in Solid-State Circuits (2002): For contributions to MOSFET physics and BSIM model development
  • Monie A. Ferst Award, Sigma Xi (1998)
  • Member of the National Academy of Engineering (1997): For contributions to modeling integrated-circuit devices and VLSI systems reliability
  • IEEE Fellow (1990): For understanding hot-electron effects in MOS devices

Best Publications

  • Hot-electron-induced MOSFET degradation—Model, monitor, and improvement

    Chenming Hu;Simon C. Tam;Fu-Chieh Hsu;Ping-Keung Ko

  • FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

    D. Hisamoto;Wen-Chin Lee;J. Kedzierski;H. Takeuchi

  • MoS2 transistors with 1-nanometer gate lengths

    Sujay B. Desai;Sujay B. Desai;Surabhi R. Madhvapathy;Surabhi R. Madhvapathy;Angada B. Sachid;Angada B. Sachid;Juan Pablo Llinas;Juan Pablo Llinas

  • Electrical Breakdown in Thin Gate and Tunneling Oxides

    Ih-Chin Chen;S.E. Holland;Chenming Hu

  • A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors

    K.K. Hung;P.K. Ko;C. Hu;Y.C. Cheng

  • FinFET scaling to 10 nm gate length

    Bin Yu;Leland Chang;S. Ahmed;Haihong Wang

  • Sub 50-nm FinFET: PMOS

    Xuejue Huang;Wen-Chin Lee;Charles Kuo;D. Hisamoto

  • Enhanced ferroelectricity in ultrathin films grown directly on silicon.

    Suraj S. Cheema;Daewoong Kwon;Daewoong Kwon;Nirmaan Shanker;Roberto dos Reis

  • Modern Semiconductor Devices for Integrated Circuits

    Chenming Hu

  • Field-Effect Transistors Built from All Two-Dimensional Material Components

    Tania Roy;Mahmut Tosun;Mahmut Tosun;Jeong Seuk Kang;Jeong Seuk Kang;Angada B. Sachid

  • New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation

    Y. Cao;T. Sato;M. Orshansky;D. Sylvester

  • Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation

    K.F. Schuegraf;Chenming Hu

  • Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture

    Chenming Hu;Tsu-Jae King;Vivek Subramanian;Leland Chang

  • MOS capacitance measurements for high-leakage thin dielectrics

    K.J. Yang;Chenming Hu

  • Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI

    F. Assaderaghi;D. Sinitsky;S.A. Parke;J. Bokor

  • Sub-50 nm P-channel FinFET

    Xuejue Huang;Wen-Chin Lee;C. Kuo;D. Hisamoto

  • MOSFET Modeling & BSIM3 User's Guide

    Yuhua Cheng;Chenming Hu

  • Lucky-electron model of channel hot-electron injection in MOSFET'S

    Simon Tam;Ping-Keung Ko;Chenming Hu

  • Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology

    Yee Chia Yeo;Tsu Jae King;Chen-Ming Hu

  • Immersion Fluid for Immersion Lithography, and Method of Performing Immersion Lithography

    Yee-Chia Yeo;Burn-Jeng Lin;Chenming Hu

Frequent Co-Authors

Tsu-Jae King
Tsu-Jae King University of California, Berkeley
Fu-Liang Yang
Fu-Liang Yang Academia Sinica
Ping-Keung Ko
Ping-Keung Ko Hong Kong University of Science and Technology
Sayeef Salahuddin
Sayeef Salahuddin University of California, Berkeley
Mansun Chan
Mansun Chan Hong Kong University of Science and Technology
Ali M. Niknejad
Ali M. Niknejad University of California, Berkeley
Yogesh Singh Chauhan
Yogesh Singh Chauhan Indian Institute of Technology Kanpur
Sourabh Khandelwal
Sourabh Khandelwal Macquarie University
Jeffrey Bokor
Jeffrey Bokor University of California, Berkeley
Nathan W. Cheung
Nathan W. Cheung University of California, Berkeley

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