2026 Chenming Hu: Electronics and Electrical Engineering Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Electronics and Electrical Engineering	150	17	17	8	8	1288	85423
Materials Science	144	205	198	86	81	1170	75848

Research.com Recognitions

2026 - Research.com Electronics and Electrical Engineering in United States Leader Award
2026 - Research.com Materials Science in United States Leader Award
2025 - Research.com Electronics and Electrical Engineering in United States Leader Award
2025 - Research.com Materials Science in United States Leader Award
2022 - Research.com Electronics and Electrical Engineering in United States Leader Award
2022 - Research.com Materials Science in United States Leader Award
2020 - IEEE Medal of Honor For a distinguished career of developing and putting into practice semiconductor models, particularly 3-D device structures, that have helped keep Moore's Law going over many decades.
2015 - Fellow, National Academy of Inventors
2012 - Fellow, The World Academy of Sciences
2011 - Semiconductor Industry Association University Researcher Award
2009 - IEEE Jun-ichi Nishizawa Medal "For technical contributions to MOS device reliability, scaling of CMOS and compact device modeling."
2002 - IEEE Donald O. Pederson Award in Solid-State Circuits "For contributions to MOSFET physics and development of the BSIM model for CMOS circuit simulation."
1998 - Monie A. Ferst Award, Sigma Xi
1997 - Member of the National Academy of Engineering For contributions to the modeling integration-circuit devices and to the reliability and performance of VLSI systems.
1990 - IEEE Fellow For contributions to the understanding of hot-electron effects in MOS devices.

Overview

Chenming Hu is affiliated with the University of California, Berkeley in the United States. Their research primarily focuses on the field of engineering, with a specialization in electrical and electronic engineering.

The scientist has contributed to several main topics in semiconductor research, which include:

Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Integrated Circuits and Semiconductor Failure Analysis
3D IC and TSV technologies
Thin-Film Transistor Technologies

Chenming Hu's publications are concentrated in venues such as the Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials. The scientist's recently documented paper is titled "Effect of Dielectric Layer Scheme for High-Quality Silicon Channel in Monolithic 3DIC," published in 2020 within this venue.

The list of frequent co-authors collaborating with Chenming Hu includes:

Yogesh Singh Chauhan
Girish Pahwa
Avirup Dasgupta
Darsen D. Lu
Sriramkumar Venugopalan

Chenming Hu's awards and recognitions comprise several notable honors:

IEEE Medal of Honor (2020): For a distinguished career developing semiconductor models and 3-D device structures facilitating Moore's Law
Fellow, National Academy of Inventors (2015)
Fellow, The World Academy of Sciences (2012)
Semiconductor Industry Association University Researcher Award (2011)
IEEE Jun-ichi Nishizawa Medal (2009): For contributions to MOS device reliability, CMOS scaling, and device modeling
IEEE Donald O. Pederson Award in Solid-State Circuits (2002): For contributions to MOSFET physics and BSIM model development
Monie A. Ferst Award, Sigma Xi (1998)
Member of the National Academy of Engineering (1997): For contributions to modeling integrated-circuit devices and VLSI systems reliability
IEEE Fellow (1990): For understanding hot-electron effects in MOS devices

Best Publications

Hot-electron-induced MOSFET degradation—Model, monitor, and improvement

Chenming Hu;Simon C. Tam;Fu-Chieh Hsu;Ping-Keung Ko

3593
Citations
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

D. Hisamoto;Wen-Chin Lee;J. Kedzierski;H. Takeuchi

2411
Citations
MoS2 transistors with 1-nanometer gate lengths

Sujay B. Desai;Sujay B. Desai;Surabhi R. Madhvapathy;Surabhi R. Madhvapathy;Angada B. Sachid;Angada B. Sachid;Juan Pablo Llinas;Juan Pablo Llinas

1559
Citations
Electrical Breakdown in Thin Gate and Tunneling Oxides

Ih-Chin Chen;S.E. Holland;Chenming Hu

1259
Citations
A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors

K.K. Hung;P.K. Ko;C. Hu;Y.C. Cheng

1104
Citations
FinFET scaling to 10 nm gate length

Bin Yu;Leland Chang;S. Ahmed;Haihong Wang

839
Citations
Sub 50-nm FinFET: PMOS

Xuejue Huang;Wen-Chin Lee;Charles Kuo;D. Hisamoto

837
Citations
Enhanced ferroelectricity in ultrathin films grown directly on silicon.

Suraj S. Cheema;Daewoong Kwon;Daewoong Kwon;Nirmaan Shanker;Roberto dos Reis

816
Citations
Modern Semiconductor Devices for Integrated Circuits

Chenming Hu

784
Citations
Field-Effect Transistors Built from All Two-Dimensional Material Components

Tania Roy;Mahmut Tosun;Mahmut Tosun;Jeong Seuk Kang;Jeong Seuk Kang;Angada B. Sachid

776
Citations
New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation

Y. Cao;T. Sato;M. Orshansky;D. Sylvester

721
Citations
Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation

K.F. Schuegraf;Chenming Hu

720
Citations
Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture

Chenming Hu;Tsu-Jae King;Vivek Subramanian;Leland Chang

686
Citations
MOS capacitance measurements for high-leakage thin dielectrics

K.J. Yang;Chenming Hu

632
Citations
Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI

F. Assaderaghi;D. Sinitsky;S.A. Parke;J. Bokor

627
Citations
Sub-50 nm P-channel FinFET

Xuejue Huang;Wen-Chin Lee;C. Kuo;D. Hisamoto

616
Citations
MOSFET Modeling & BSIM3 User's Guide

Yuhua Cheng;Chenming Hu

598
Citations
Lucky-electron model of channel hot-electron injection in MOSFET'S

Simon Tam;Ping-Keung Ko;Chenming Hu

598
Citations
Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology

Yee Chia Yeo;Tsu Jae King;Chen-Ming Hu

560
Citations
Immersion Fluid for Immersion Lithography, and Method of Performing Immersion Lithography

Yee-Chia Yeo;Burn-Jeng Lin;Chenming Hu

544
Citations

Frequent Co-Authors

Tsu-Jae King University of California, Berkeley

Fu-Liang Yang Academia Sinica

Ping-Keung Ko Hong Kong University of Science and Technology

Sayeef Salahuddin University of California, Berkeley

Mansun Chan Hong Kong University of Science and Technology

Ali M. Niknejad University of California, Berkeley

Yogesh Singh Chauhan Indian Institute of Technology Kanpur

Sourabh Khandelwal Macquarie University

Jeffrey Bokor University of California, Berkeley

Nathan W. Cheung University of California, Berkeley

External Links

Wikipedia of Chenming Hu Personal website of Chenming Hu Google Scholar page

If you think any of the details on this page are incorrect, let us know.

Related Online Degrees & Career Pathways

For students pursuing Electronics and Electrical Engineering in the USA, exploring related online degrees can open diverse career opportunities. Many professionals benefit from combining technical knowledge with strong management skills. For those looking to advance quickly, programs highlighted in the quickest online project management degree category offer accelerated paths that fit well with demanding schedules.

In addition, earning a bachelor of project management can enhance leadership potential and prepare graduates for multidisciplinary team roles, which are increasingly important in engineering fields. These online options provide flexibility, especially for working adults managing both career and education. Resources on accelerated degree programs for working adults highlight opportunities to complete degrees faster without compromising quality.

For introverted individuals interested in this field, it's useful to consider career pathways aligned with their strengths. The guide on best jobs for introverts offers insight into roles where analytical and independent work is valued, a great complement to an engineering background.