H-Index & Metrics Top Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering H-index 136 Citations 68,935 979 World Ranking 5 National Ranking 2
Materials Science H-index 123 Citations 55,432 854 World Ranking 159 National Ranking 78

Research.com Recognitions

Awards & Achievements

2020 - IEEE Medal of Honor For a distinguished career of developing and putting into practice semiconductor models, particularly 3-D device structures, that have helped keep Moore's Law going over many decades.

2015 - Fellow, National Academy of Inventors

2012 - Fellow, The World Academy of Sciences

2011 - Semiconductor Industry Association University Researcher Award

2009 - IEEE Jun-ichi Nishizawa Medal "For technical contributions to MOS device reliability, scaling of CMOS and compact device modeling."

2002 - IEEE Donald O. Pederson Award in Solid-State Circuits "For contributions to MOSFET physics and development of the BSIM model for CMOS circuit simulation."

1998 - Monie A. Ferst Award, Sigma Xi

1997 - Member of the National Academy of Engineering For contributions to the modeling integration-circuit devices and to the reliability and performance of VLSI systems.

1990 - IEEE Fellow For contributions to the understanding of hot-electron effects in MOS devices.

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electrical engineering
  • Semiconductor

Chenming Hu mainly focuses on Optoelectronics, MOSFET, Electrical engineering, Transistor and Electronic engineering. His work deals with themes such as Field-effect transistor, Gate dielectric, Electrode and Gate oxide, which intersect with Optoelectronics. His MOSFET study combines topics from a wide range of disciplines, such as Electron mobility, Capacitance, Leakage, Threshold voltage and Silicon on insulator.

Chenming Hu combines subjects such as Substrate, Communication channel and Doping with his study of Electrical engineering. His research investigates the link between Transistor and topics such as Semiconductor that cross with problems in Insulator and Semiconductor device. The study incorporates disciplines such as Noise and Integrated circuit in addition to Electronic engineering.

His most cited work include:

  • FinFET-a self-aligned double-gate MOSFET scalable to 20 nm (1336 citations)
  • Hot-electron-induced MOSFET degradation—Model, monitor, and improvement (1000 citations)
  • A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors (699 citations)

What are the main themes of his work throughout his whole career to date?

Chenming Hu spends much of his time researching Optoelectronics, Electrical engineering, MOSFET, Electronic engineering and Transistor. His Optoelectronics research is multidisciplinary, relying on both Gate dielectric and Gate oxide. As a member of one scientific family, Chenming Hu mostly works in the field of Gate dielectric, focusing on Electrode and, on occasion, Layer.

His Electrical engineering study frequently links to adjacent areas such as Oxide. In his research, Negative impedance converter is intimately related to Capacitance, which falls under the overarching field of MOSFET. As a part of the same scientific family, he mostly works in the field of Electronic engineering, focusing on Reliability and, on occasion, Electromigration.

He most often published in these fields:

  • Optoelectronics (53.07%)
  • Electrical engineering (31.98%)
  • MOSFET (31.20%)

What were the highlights of his more recent work (between 2011-2021)?

  • Optoelectronics (53.07%)
  • MOSFET (31.20%)
  • Electronic engineering (29.47%)

In recent papers he was focusing on the following fields of study:

Chenming Hu mostly deals with Optoelectronics, MOSFET, Electronic engineering, Logic gate and Capacitance. The Optoelectronics study combines topics in areas such as Field-effect transistor, Transistor and Electrical engineering. Chenming Hu has included themes like Silicon on insulator and Scaling in his Transistor study.

Chenming Hu is interested in Gate oxide, which is a branch of Electrical engineering. The various areas that he examines in his MOSFET study include Computational physics, Doping, Flicker noise and CMOS, Semiconductor device modeling. His studies in Electronic engineering integrate themes in fields like BSIM and Reliability.

Between 2011 and 2021, his most popular works were:

  • MoS2 transistors with 1-nanometer gate lengths (586 citations)
  • Field-Effect Transistors Built from All Two-Dimensional Material Components (416 citations)
  • 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures (152 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electrical engineering

His primary scientific interests are in Optoelectronics, MOSFET, Electrical engineering, Electronic engineering and Logic gate. The concepts of his Optoelectronics study are interwoven with issues in Field-effect transistor, Nanotechnology and Gate oxide. His MOSFET study necessitates a more in-depth grasp of Transistor.

His work carried out in the field of Electrical engineering brings together such families of science as Power and Parasitic capacitance. His Electronic engineering research is multidisciplinary, incorporating perspectives in Node and BSIM. His Logic gate research integrates issues from Electronic circuit, Capacitance, Gate control, Negative impedance converter and Threshold voltage.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Top Publications

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

D. Hisamoto;Wen-Chin Lee;J. Kedzierski;H. Takeuchi.
IEEE Transactions on Electron Devices (2000)

1971 Citations

Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement

Chenming Hu;Simon C. Tam;Fu-Chieh Hsu;Ping-Keung Ko.
IEEE Journal of Solid-state Circuits (1985)

1781 Citations

A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors

K.K. Hung;P.K. Ko;C. Hu;Y.C. Cheng.
IEEE Transactions on Electron Devices (1990)

942 Citations

Sub 50-nm FinFET: PMOS

Xuejue Huang;Wen-Chin Lee;Charles Kuo;D. Hisamoto.
international electron devices meeting (1999)

775 Citations

FinFET scaling to 10 nm gate length

Bin Yu;Leland Chang;S. Ahmed;Haihong Wang.
international electron devices meeting (2002)

712 Citations

New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation

Y. Cao;T. Sato;M. Orshansky;D. Sylvester.
custom integrated circuits conference (2000)

690 Citations

MoS2 Transistors With 1-nanometer Gate Lengths

Sujay B. Desai;Sujay B. Desai;Surabhi R. Madhvapathy;Surabhi R. Madhvapathy;Angada B. Sachid;Angada B. Sachid;Juan Pablo Llinas;Juan Pablo Llinas.
Science (2016)

684 Citations

Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture

Chenming Hu;Tsu-Jae King;Vivek Subramanian;Leland Chang.
(2000)

676 Citations

Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation

K.F. Schuegraf;Chenming Hu.
IEEE Transactions on Electron Devices (1994)

652 Citations

MOS capacitance measurements for high-leakage thin dielectrics

K.J. Yang;Chenming Hu.
IEEE Transactions on Electron Devices (1999)

599 Citations

Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking h-index is inferred from publications deemed to belong to the considered discipline.

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