D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 53 Citations 15,514 123 World Ranking 1464 National Ranking 166

Research.com Recognitions

Awards & Achievements

2002 - IEEE Donald O. Pederson Award in Solid-State Circuits "For contributions to MOSFET physics and development of the BSIM model for CMOS circuit simulation."

Overview

What is he best known for?

The fields of study he is best known for:

  • Transistor
  • Semiconductor
  • Integrated circuit

His scientific interests lie mostly in MOSFET, Field-effect transistor, Electrical engineering, Voltage and Optoelectronics. His MOSFET research incorporates elements of Subthreshold conduction, Bipolar junction transistor and Dielectric. His Field-effect transistor research is multidisciplinary, incorporating elements of Noise, Electronic engineering and Parasitic capacitance.

His study in the field of Threshold voltage and CMOS also crosses realms of Scaling. His Threshold voltage study incorporates themes from Low voltage, Silicon on insulator and Ring oscillator. His research in Optoelectronics intersects with topics in Drain-induced barrier lowering and Analytical chemistry.

His most cited work include:

  • Hot-electron-induced MOSFET degradation—Model, monitor, and improvement (1000 citations)
  • A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors (699 citations)
  • BSIM: Berkeley short-channel IGFET model for MOS transistors (488 citations)

What are the main themes of his work throughout his whole career to date?

P.K. Ko mainly investigates MOSFET, Electrical engineering, Field-effect transistor, Optoelectronics and Electronic engineering. His MOSFET research is included under the broader classification of Voltage. His research on Electrical engineering frequently connects to adjacent areas such as Silicon on insulator.

The various areas that P.K. Ko examines in his Field-effect transistor study include Capacitance, Transconductance, Current and Analytical chemistry. His study in Optoelectronics is interdisciplinary in nature, drawing from both AND gate, Equivalent series resistance, Drain-induced barrier lowering and Leakage. His Electronic engineering research incorporates themes from Digital electronics, Electronic circuit and Circuit reliability, Reliability.

He most often published in these fields:

  • MOSFET (52.07%)
  • Electrical engineering (51.24%)
  • Field-effect transistor (42.15%)

What were the highlights of his more recent work (between 1993-1997)?

  • Electrical engineering (51.24%)
  • MOSFET (52.07%)
  • Silicon on insulator (17.36%)

In recent papers he was focusing on the following fields of study:

His primary areas of investigation include Electrical engineering, MOSFET, Silicon on insulator, Field-effect transistor and CMOS. P.K. Ko focuses mostly in the field of Electrical engineering, narrowing it down to matters related to Optoelectronics and, in some cases, Noise. His biological study spans a wide range of topics, including Electron mobility, Ring oscillator and Equivalent series resistance.

His work carried out in the field of Silicon on insulator brings together such families of science as Conductance, Low voltage, Voltage, Bipolar junction transistor and Threshold voltage. His Field-effect transistor study combines topics in areas such as Oxide, Time constant, Annealing, Analytical chemistry and Gate oxide. In his research, Electronic circuit, Reliability, Digital electronics, Spice and Circuit reliability is intimately related to Integrated circuit, which falls under the overarching field of CMOS.

Between 1993 and 1997, his most popular works were:

  • Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI (455 citations)
  • A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation (306 citations)
  • A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation (154 citations)

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Hot-electron-induced MOSFET degradation—Model, monitor, and improvement

Chenming Hu;Simon C. Tam;Fu-Chieh Hsu;Ping-Keung Ko.
IEEE Transactions on Electron Devices (1985)

3510 Citations

Hot-electron-induced MOSFET degradation—Model, monitor, and improvement

Chenming Hu;Simon C. Tam;Fu-Chieh Hsu;Ping-Keung Ko.
IEEE Transactions on Electron Devices (1985)

3510 Citations

A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors

K.K. Hung;P.K. Ko;C. Hu;Y.C. Cheng.
IEEE Transactions on Electron Devices (1990)

1008 Citations

A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors

K.K. Hung;P.K. Ko;C. Hu;Y.C. Cheng.
IEEE Transactions on Electron Devices (1990)

1008 Citations

BSIM: Berkeley short-channel IGFET model for MOS transistors

B.J. Sheu;D.L. Scharfetter;P.-K. Ko;M.-C. Jeng.
IEEE Journal of Solid-state Circuits (1987)

754 Citations

BSIM: Berkeley short-channel IGFET model for MOS transistors

B.J. Sheu;D.L. Scharfetter;P.-K. Ko;M.-C. Jeng.
IEEE Journal of Solid-state Circuits (1987)

754 Citations

Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI

F. Assaderaghi;D. Sinitsky;S.A. Parke;J. Bokor.
IEEE Transactions on Electron Devices (1997)

577 Citations

Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI

F. Assaderaghi;D. Sinitsky;S.A. Parke;J. Bokor.
IEEE Transactions on Electron Devices (1997)

577 Citations

Lucky-electron model of channel hot-electron injection in MOSFET'S

Simon Tam;Ping-Keung Ko;Chenming Hu.
IEEE Transactions on Electron Devices (1984)

571 Citations

Lucky-electron model of channel hot-electron injection in MOSFET'S

Simon Tam;Ping-Keung Ko;Chenming Hu.
IEEE Transactions on Electron Devices (1984)

571 Citations

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