World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
67
Citations
19610
World Ranking
1065
National Ranking
189

Research.com Recognitions

  • 2002 - IEEE Donald O. Pederson Award in Solid-State Circuits "For contributions to MOSFET physics and development of the BSIM model for CMOS circuit simulation."

Overview

Ping-Keung Ko is affiliated with the Hong Kong University of Science and Technology in China. Their academic contributions span various aspects of semiconductor physics and circuit simulation models.

In 2002, Ping-Keung Ko received the IEEE Donald O. Pederson Award in Solid-State Circuits. This award was given "For contributions to MOSFET physics and development of the BSIM model for CMOS circuit simulation."

Best Publications

  • Hot-electron-induced MOSFET degradation—Model, monitor, and improvement

    Chenming Hu;Simon C. Tam;Fu-Chieh Hsu;Ping-Keung Ko

  • A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors

    K.K. Hung;P.K. Ko;C. Hu;Y.C. Cheng

  • BSIM: Berkeley short-channel IGFET model for MOS transistors

    B.J. Sheu;D.L. Scharfetter;P.-K. Ko;M.-C. Jeng

  • Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI

    F. Assaderaghi;D. Sinitsky;S.A. Parke;J. Bokor

  • Lucky-electron model of channel hot-electron injection in MOSFET'S

    Simon Tam;Ping-Keung Ko;Chenming Hu

  • The impact of gate-induced drain leakage current on MOSFET scaling

    T.Y. Chan;J. Chen;P.K. Ko;C. Hu

  • Threshold voltage model for deep-submicrometer MOSFETs

    Z.-H. Liu;C. Hu;J.-H. Huang;T.-Y. Chan

  • Random telegraph noise of deep-submicrometer MOSFETs

    K.K. Hung;P.K. Ko;C. Hu;Y.C. Cheng

  • Subbreakdown drain leakage current in MOSFET

    J. Chen;T.Y. Chan;I.C. Chen;P.K. Ko

  • The effect of high fields on MOS device and circuit performance

    C.G. Sodini;Ping-Keung Ko;J.L. Moll

  • A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation

    F. Assaderaghi;D. Sinitsky;S. Parke;J. Bokor

  • A physics-based MOSFET noise model for circuit simulators

    K.K. Hung;P.K. Ko;C. Hu;Y.C. Cheng

  • Berkeley reliability tools-BERT

    R.H. Tu;E. Rosenbaum;W.Y. Chan;C.C. Li

  • A simple method to characterize substrate current in MOSFET's

    T.Y. Chan;P.K. Ko;C. Hu

  • High-gain lateral bipolar action in a MOSFET structure

    S. Verdonckt-Vandebroek;S.S. Wong;J.C.S. Woo;P.K. Ko

  • A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation

    Yuhua Cheng;Min-Chie Jeng;Zhihong Liu;Jianhui Huang

  • An engineering model for short-channel MOS devices

    K.-y. Toh;P.-K. Ko;R.G. Meyer

  • Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's

    Mong-Song Liang;Jeong Yeol Choi;Ping-Keung Ko;Chenming Hu

  • Dependence of channel electric field on device scaling

    T.Y. Chan;P.K. Ko;C. Hu

  • An analytical breakdown model for short-channel MOSFET's

    Fu-Chieh Hsu;Ping-Keung Ko;Simon Tam;Chenming Hu

Frequent Co-Authors

Chenming Hu
Chenming Hu University of California, Berkeley
Zhi Liu
Zhi Liu ShanghaiTech University
Elyse Rosenbaum
Elyse Rosenbaum University of Illinois at Urbana-Champaign
Richard S. Muller
Richard S. Muller University of California, Berkeley
Jeffrey Bokor
Jeffrey Bokor University of California, Berkeley
Mansun Chan
Mansun Chan Hong Kong University of Science and Technology
Tso-Ping Ma
Tso-Ping Ma Yale University
S. Simon Wong
S. Simon Wong Stanford University
Hyungcheol Shin
Hyungcheol Shin Seoul National University

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Best Scientists Citing Ping-Keung Ko