World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
60
Citations
14586
World Ranking
1624
National Ranking
657

Materials Science

D-Index
61
Citations
14856
World Ranking
6715
National Ranking
1692

Tso-Ping Ma publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Tso-Ping Ma sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 359 publications — 69th percentile

69% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Tso-Ping Ma D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Tso-Ping Ma sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 60 D-Index — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Tso-Ping Ma is a researcher affiliated with Yale University in the United States. Their recent academic contributions are centered around the field of memory technology, particularly focusing on ferroelectric memory.

Their most recent publication is titled (Invited) Some Recent Progress in Ferroelectric Memory Technology, published in 2021 in the ECS Meeting Abstracts. This paper represents the available documented research contribution and reflects a focus on advances in ferroelectric memory devices.

Frequent co-authors include:

  • Hao Jiang

The primary publication venue for their documented work is:

  • ECS Meeting Abstracts

This indicates that their research is disseminated through conferences and symposia that emphasize electrochemical and solid-state science, which aligns with their technical focus on memory technologies.

Best Publications

  • Ionizing radiation effects in MOS devices and circuits

    T. P. Ma;Paul V. Dressendorfer

  • Black Phosphorus Mid-Infrared Photodetectors with High Gain

    Qiushi Guo;Andreas Pospischil;Maruf Bhuiyan;Hao Jiang

  • Why is nonvolatile ferroelectric memory field-effect transistor still elusive?

    T.P. Ma;Jin-Ping Han

  • Making silicon nitride film a viable gate dielectric

    T.P. Ma

  • Current transport in metal/hafnium oxide/silicon structure

    W.J. Zhu;Tso-Ping Ma;T. Tamagawa;J. Kim

  • Effect of Al inclusion in HfO 2 on the physical and electrical properties of the dielectrics

    W.J. Zhu;T. Tamagawa;M. Gibson;T. Furukawa

  • Ferroelectric field effect transistors for memory applications.

    Jason Hoffman;Xiao Pan;James W. Reiner;Fred J. Walker

  • Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics

    Wenjuan Zhu;Jin-Ping Han;T.P. Ma

  • Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric

    Yee Chia Yeo;Qiang Lu;Wen Chin Lee;Wen Chin Lee;Tsu-Jae King

  • A Study of Endurance Issues in HfO 2 -Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

    Nanbo Gong;Tso-Ping Ma

  • Tunneling leakage current in oxynitride: dependence on oxygen/nitrogen content

    Xin Guo;T.P. Ma

  • Why Is FE–HfO 2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

    Nanbo Gong;Tso-Ping Ma

  • Polarity dependent gate tunneling currents in dual-gate CMOSFETs

    Ying Shi;T.P. Ma;S. Prasad;S. Dhanda

  • Charge trapping in ultrathin hafnium oxide

    W.J. Zhu;T.P. Ma;S. Zafar;T. Tamagawa

  • High‐quality transparent conductive indium oxide films prepared by thermal evaporation

    C. A. Pan;T. P. Ma

  • The impact of device scaling on the current fluctuations in MOSFET's

    Ming-Horn Tsai;Tso-Ping Ma

  • HfO/sub 2/ and HfAlO for CMOS: thermal stability and current transport

    W. Zhu;T.P. Ma;T. Tamagawa;Y. Di

  • Interface trap transformation in radiation or hot-electron damaged MOS structures

    T P Ma

  • High-quality oxide/nitride/oxide gate insulator for GaN MIS structures

    B. Gaffey;L.J. Guido;X.W. Wang;T.P. Ma

  • Direct lateral profiling of hot-carrier-induced oxide charge and interface traps in thin gate MOSFET's

    Chun Chen;Tso-Ping Ma

Frequent Co-Authors

Wenjuan Zhu
Wenjuan Zhu University of Illinois at Urbana-Champaign
Chenming Hu
Chenming Hu University of California, Berkeley
Tsu-Jae King
Tsu-Jae King University of California, Berkeley
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Robert A. Reed
Robert A. Reed Vanderbilt University
Peide D. Ye
Peide D. Ye Purdue University West Lafayette
Stephen A. Campbell
Stephen A. Campbell University of Minnesota
Susanne Stemmer
Susanne Stemmer University of California, Santa Barbara
Wayne L. Gladfelter
Wayne L. Gladfelter University of Minnesota
Zhi Liu
Zhi Liu ShanghaiTech University

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For students and professionals interested in Electronics and Electrical Engineering, exploring related fields can open additional career opportunities. Careers in project management are especially popular, offering a blend of technical knowledge and leadership skills. Pursuing a project management bachelor degree online can equip you with essential tools to manage complex engineering projects efficiently.

Many working adults find value in accelerated online degree programs for working adults, which allow them to balance work and study without delaying career advancement. These programs often emphasize practical skills that can be applied immediately in the workplace.

If you prefer a faster route, consider enrolling in an accelerated online project management degree. This choice can help you quickly transition into leadership roles within technical industries.

Additionally, if you identify as an introvert, the good news is that there are many jobs for introverts in engineering and project management fields that value focused, independent work. These career pathways offer the right balance between collaboration and personal concentration, making them a great fit for diverse personality types.

Best Scientists Citing Tso-Ping Ma

Trending Scientists

Recently Published Articles