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Wenjuan Zhu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Wenjuan Zhu sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

The last bar groups every scientist with 1,065 publications or more.

Wenjuan Zhu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Wenjuan Zhu sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

The last bar groups every scientist with 111 D-Index or more.

Overview

Wenjuan Zhu is affiliated with the University of Illinois at Urbana-Champaign in the United States. Their research contributions span the fields of engineering and materials science, with significant focus on materials chemistry, electrical and electronic engineering, atomic and molecular physics and optics, biomedical engineering, and electronic, optical and magnetic materials.

Their work extensively covers topics including 2D materials and applications, advanced memory and neural computing, perovskite materials and applications, ferroelectric and negative capacitance devices, luminescence properties of advanced materials, semiconductor materials and devices, and graphene research and applications.

Wenjuan Zhu has published research in notable scientific venues. Frequent publication outlets include Applied Physics Letters, ACS Applied Materials & Interfaces, arXiv (Cornell University), Nanoscale, and Laser & Photonics Review.

Among recent papers connected to their research are:

  • Low-dose real-time X-ray imaging with nontoxic double perovskite scintillators (2020, Light Science & Applications)
  • Transistors based on two-dimensional materials for future integrated circuits (2021, Nature Electronics)
  • Thermally activated delayed fluorescence (TADF) organic molecules for efficient X-ray scintillation and imaging (2021, Nature Materials)
  • Highly Resolved and Robust Dynamic X-Ray Imaging Using Perovskite Glass-Ceramic Scintillator with Reduced Light Scattering (2021, Advanced Science)
  • Deep Learning Enabled Strain Mapping of Single-Atom Defects in Two-Dimensional Transition Metal Dichalcogenides with Sub-Picometer Precision (2020, Nano Letters)

Frequent co-authors collaborating with Wenjuan Zhu include Junzhe Kang, Zijing Zhao, Hanwool Lee, Kai Xu, and Hojoon Ryu.

Best Publications

  • Tunable infrared plasmonic devices using graphene/insulator stacks

    Hugen Yan;Xuesong Li;Bhupesh Chandra;George Tulevski

  • Damping pathways of mid-infrared plasmons in graphene nanostructures

    Hugen Yan;Tony Low;Wenjuan Zhu;Yanqing Wu

  • Transistors based on two-dimensional materials for future integrated circuits

    Saptarshi Das;Amritanand Sebastian;Eric Pop;Connor J. McClellan

  • Structure and Electronic Transport in Graphene Wrinkles

    Wenjuan Zhu;Tony Low;Vasili Perebeinos;Ageeth A. Bol

  • State-of-the-art graphene high-frequency electronics.

    Yanqing Wu;Keith A. Jenkins;Alberto Valdes-Garcia;Damon B. Farmer

  • Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

    Wenjuan Zhu;Tony Low;Yi Hsien Lee;Han Wang

  • Current transport in metal/hafnium oxide/silicon structure

    W.J. Zhu;Tso-Ping Ma;T. Tamagawa;J. Kim

  • Photocurrent in graphene harnessed by tunable intrinsic plasmons

    Marcus Freitag;Tony Low;Wenjuan Zhu;Hugen Yan

  • Effect of Al inclusion in HfO 2 on the physical and electrical properties of the dielectrics

    W.J. Zhu;T. Tamagawa;M. Gibson;T. Furukawa

  • Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics

    Wenjuan Zhu;Jin-Ping Han;T.P. Ma

  • Magnetic field tuning of terahertz Dirac plasmons in graphene

    Hugen Yan;Zhiqiang Li;Xuesong Li;Wenjuan Zhu

  • Infrared Spectroscopy of Tunable Dirac Terahertz Magneto-Plasmons in Graphene

    Hugen Yan;Zhiqiang Li;Xuesong Li;Wenjuan Zhu

  • Infrared spectroscopy of wafer-scale graphene.

    Hugen Yan;Fengnian Xia;Wenjuan Zhu;Marcus Freitag

  • Three-terminal graphene negative differential resistance devices.

    Yanqing Wu;Damon B. Farmer;Wenjuan Zhu;Shu Jen Han

  • Charge trapping in ultrathin hafnium oxide

    W.J. Zhu;T.P. Ma;S. Zafar;T. Tamagawa

  • Silicon nitride gate dielectrics and band gap engineering in graphene layers.

    Wenjuan Zhu;Deborah Neumayer;Vasili Perebeinos;Phaedon Avouris

  • Silicon nitride gate dielectrics and bandgap engineering in graphene layers

    Wenjuan Zhu;Deborah Neumayer;Vasili Perebeinos;Phaedon Avouris

  • HfO/sub 2/ and HfAlO for CMOS: thermal stability and current transport

    W. Zhu;T.P. Ma;T. Tamagawa;Y. Di

  • Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing.

    Hojoon Ryu;Haonan Wu;Fubo Rao;Wenjuan Zhu

  • Temperature dependence of channel mobility in HfO/sub 2/-gated NMOSFETs

    W.J. Zhu;T.P. Ma

Frequent Co-Authors

Phaedon Avouris
Phaedon Avouris IBM (United States)
Fengnian Xia
Fengnian Xia Yale University
Kai Xu
Kai Xu National Center for Nanoscience and Technology
Tony Low
Tony Low University of Minnesota
Marcus Freitag
Marcus Freitag IBM (United States)
Tso-Ping Ma
Tso-Ping Ma Yale University
Yanqing Wu
Yanqing Wu Peking University
Damon B. Farmer
Damon B. Farmer IBM (United States)
Christos D. Dimitrakopoulos
Christos D. Dimitrakopoulos University of Massachusetts Amherst
Yu-Ming Lin
Yu-Ming Lin Taiwan Semiconductor Manufacturing Company (Taiwan)

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