World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
58
Citations
23330
World Ranking
7543
National Ranking
1862

Damon B. Farmer publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Damon B. Farmer sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 166 publications — 19th percentile

19% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Damon B. Farmer D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Damon B. Farmer sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 58 D-Index — 41st percentile

41% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Damon B. Farmer is affiliated with IBM in the United States and specializes in fields related to engineering and materials science. Their research spans multiple subfields including electrical and electronic engineering, materials chemistry, computational mechanics, polymers and plastics, and mechanics of materials.

Their main topics of work cover a range of areas within materials and semiconductor research. These topics include:

  • Semiconductor materials and devices
  • Advanced memory and neural computing
  • Ion-surface interactions and analysis
  • Transition metal oxide nanomaterials
  • Electronic and structural properties of oxides
  • Metal and thin film mechanics
  • Diamond and carbon-based materials research

Farmer has contributed to several peer-reviewed publications, with notable papers including:

  • "Plasma processing for advanced microelectronics beyond CMOS," published in 2021 in the Journal of Applied Physics
  • "Atomic Layer Deposition of Tungsten Oxide Using Nitrogen Dioxide: A Comparative Study with Other Oxygen Sources," published in 2021 in Chemistry of Materials
  • "Inhibitor-Free Area-Selective Deposition of Titanium Nitride," published in 2025 in Chemistry of Materials
  • "Metallization considerations for carbon nanotube device optimization," published in 2022 in the Journal of Applied Physics

The primary publication venues where Farmer's research appears are:

  • Journal of Applied Physics
  • Chemistry of Materials

Throughout their career, Farmer has collaborated frequently with several co-authors, including:

  • George G. Totir
  • Marinus Hopstaken
  • Charles Tabachnick
  • Nathan Marchack
  • L. Buzi

Farmer's work involves technical approaches to semiconductor materials and devices, focusing on thin film deposition techniques, transition metal oxides, and carbon-based materials. Their research outputs contribute to understanding materials chemistry aspects such as atomic layer deposition and ion-surface interactions, relevant for advanced microelectronics and device optimization.

Best Publications

  • 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

    Y.-M. Lin;C. Dimitrakopoulos;K. A. Jenkins;D. B. Farmer

  • Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature.

    Fengnian Xia;Damon B. Farmer;Yu-ming Lin;Phaedon Avouris

  • Operation of Graphene Transistors at Gigahertz Frequencies

    Yu-Ming Lin;Keith A. Jenkins;Alberto Valdes-Garcia;Joshua P. Small

  • Operation of Graphene Transistors at GHz Frequencies

    Yu-Ming Lin;Keith A. Jenkins;Alberto Valdes-Garcia;Joshua P. Small

  • Wafer-Scale Graphene Integrated Circuit

    Yu-Ming Lin;Alberto Valdes-Garcia;Shu-Jen Han;Damon B. Farmer

  • High-frequency, scaled graphene transistors on diamond-like carbon

    Yanqing Wu;Yu-ming Lin;Ageeth A. Bol;Keith A. Jenkins

  • Black Phosphorus Mid-Infrared Photodetectors with High Gain

    Qiushi Guo;Andreas Pospischil;Maruf Bhuiyan;Hao Jiang

  • Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics

    Ali Javey;Jing Guo;Damon B. Farmer;Qian Wang

  • Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

    Ali Javey;Jing Guo;Damon B. Farmer;Qian Wang

  • High performance n-type carbon nanotube field-effect transistors with chemically doped contacts.

    Ali Javey;Ryan Tu;Damon B. Farmer;Jing Guo

  • Chemical doping and electron-hole conduction asymmetry in graphene devices.

    Damon B. Farmer;Roksana Golizadeh-Mojarad;Vasili Perebeinos;Yu-Ming Lin

  • Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics

    Ali Javey;Jing Guo;Damon B. Farmer;Qian Wang

  • Atomic Layer Deposition to Fine-Tune the Surface Properties and Diameters of Fabricated Nanopores

    Peng Chen;Toshiyuki Mitsui;Damon B. Farmer;Jene Golovchenko

  • State-of-the-art graphene high-frequency electronics.

    Yanqing Wu;Keith A. Jenkins;Alberto Valdes-Garcia;Damon B. Farmer

  • Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

    Wenjuan Zhu;Tony Low;Yi Hsien Lee;Han Wang

  • Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

    Damon B. Farmer;Hsin-Ying Chiu;Yu-Ming Lin;Keith A. Jenkins

  • Surface chemistry and electrical properties of germanium nanowires.

    Dunwei Wang;Ying-Lan Chang;Qian Wang;Jien Cao

  • Atomic layer deposition on suspended single-walled carbon nanotubes via gas-phase noncovalent functionalization.

    Damon B. Farmer;Roy G. Gordon

  • Reducing Contact Resistance in Graphene Devices through Contact Area Patterning

    Joshua T. Smith;Aaron D. Franklin;Damon B. Farmer;Christos D. Dimitrakopoulos

  • Carbon nanotube transistors scaled to a 40-nanometer footprint

    Qing Cao;Jerry Tersoff;Damon B. Farmer;Yu Zhu

  • Graphene plasmon enhanced vibrational sensing of surface-adsorbed layers.

    Yilei Li;Yilei Li;Hugen Yan;Damon B. Farmer;Xiang Meng

Frequent Co-Authors

Phaedon Avouris
Phaedon Avouris IBM (United States)
Yu-Ming Lin
Yu-Ming Lin Taiwan Semiconductor Manufacturing Company (Taiwan)
Shu-Jen Han
Shu-Jen Han IBM (United States)
Roy G. Gordon
Roy G. Gordon Harvard University
Christos D. Dimitrakopoulos
Christos D. Dimitrakopoulos University of Massachusetts Amherst
Keith A. Jenkins
Keith A. Jenkins IBM (United States)
Yanqing Wu
Yanqing Wu Peking University
Alberto Valdes-Garcia
Alberto Valdes-Garcia IBM (United States)
Alfred Grill
Alfred Grill IBM (United States)
Ralph Krupke
Ralph Krupke Karlsruhe Institute of Technology

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