2026 Damon B. Farmer: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	58	7545	7295	1864	1727	166	23330

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

7545

7295

1864

1727

166

23330

Overview

Damon B. Farmer is affiliated with IBM in the United States and specializes in fields related to engineering and materials science. Their research spans multiple subfields including electrical and electronic engineering, materials chemistry, computational mechanics, polymers and plastics, and mechanics of materials.

Their main topics of work cover a range of areas within materials and semiconductor research. These topics include:

Semiconductor materials and devices
Advanced memory and neural computing
Ion-surface interactions and analysis
Transition metal oxide nanomaterials
Electronic and structural properties of oxides
Metal and thin film mechanics
Diamond and carbon-based materials research

Farmer has contributed to several peer-reviewed publications, with notable papers including:

"Plasma processing for advanced microelectronics beyond CMOS," published in 2021 in the Journal of Applied Physics
"Atomic Layer Deposition of Tungsten Oxide Using Nitrogen Dioxide: A Comparative Study with Other Oxygen Sources," published in 2021 in Chemistry of Materials
"Inhibitor-Free Area-Selective Deposition of Titanium Nitride," published in 2025 in Chemistry of Materials
"Metallization considerations for carbon nanotube device optimization," published in 2022 in the Journal of Applied Physics

The primary publication venues where Farmer's research appears are:

Journal of Applied Physics
Chemistry of Materials

Throughout their career, Farmer has collaborated frequently with several co-authors, including:

George G. Totir
Marinus Hopstaken
Charles Tabachnick
Nathan Marchack
L. Buzi

Farmer's work involves technical approaches to semiconductor materials and devices, focusing on thin film deposition techniques, transition metal oxides, and carbon-based materials. Their research outputs contribute to understanding materials chemistry aspects such as atomic layer deposition and ion-surface interactions, relevant for advanced microelectronics and device optimization.

Best Publications

100-GHz Transistors from Wafer-Scale Epitaxial Graphene

Y.-M. Lin;C. Dimitrakopoulos;K. A. Jenkins;D. B. Farmer

3281
Citations
Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature.

Fengnian Xia;Damon B. Farmer;Yu-ming Lin;Phaedon Avouris

1573
Citations
Operation of Graphene Transistors at Gigahertz Frequencies

Yu-Ming Lin;Keith A. Jenkins;Alberto Valdes-Garcia;Joshua P. Small

1365
Citations
Operation of Graphene Transistors at GHz Frequencies

Yu-Ming Lin;Keith A. Jenkins;Alberto Valdes-Garcia;Joshua P. Small

1318
Citations
Wafer-Scale Graphene Integrated Circuit

Yu-Ming Lin;Alberto Valdes-Garcia;Shu-Jen Han;Damon B. Farmer

1147
Citations
High-frequency, scaled graphene transistors on diamond-like carbon

Yanqing Wu;Yu-ming Lin;Ageeth A. Bol;Keith A. Jenkins

1119
Citations
Black Phosphorus Mid-Infrared Photodetectors with High Gain

Qiushi Guo;Andreas Pospischil;Maruf Bhuiyan;Hao Jiang

801
Citations
Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics

Ali Javey;Jing Guo;Damon B. Farmer;Qian Wang

774
Citations
Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

Ali Javey;Jing Guo;Damon B. Farmer;Qian Wang

737
Citations
High performance n-type carbon nanotube field-effect transistors with chemically doped contacts.

Ali Javey;Ryan Tu;Damon B. Farmer;Jing Guo

625
Citations
Chemical doping and electron-hole conduction asymmetry in graphene devices.

Damon B. Farmer;Roksana Golizadeh-Mojarad;Vasili Perebeinos;Yu-Ming Lin

625
Citations
Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics

Ali Javey;Jing Guo;Damon B. Farmer;Qian Wang

620
Citations
Atomic Layer Deposition to Fine-Tune the Surface Properties and Diameters of Fabricated Nanopores

Peng Chen;Toshiyuki Mitsui;Damon B. Farmer;Jene Golovchenko

559
Citations
State-of-the-art graphene high-frequency electronics.

Yanqing Wu;Keith A. Jenkins;Alberto Valdes-Garcia;Damon B. Farmer

544
Citations
Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

Wenjuan Zhu;Tony Low;Yi Hsien Lee;Han Wang

521
Citations
Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

Damon B. Farmer;Hsin-Ying Chiu;Yu-Ming Lin;Keith A. Jenkins

486
Citations
Surface chemistry and electrical properties of germanium nanowires.

Dunwei Wang;Ying-Lan Chang;Qian Wang;Jien Cao

445
Citations
Atomic layer deposition on suspended single-walled carbon nanotubes via gas-phase noncovalent functionalization.

Damon B. Farmer;Roy G. Gordon

321
Citations
Reducing Contact Resistance in Graphene Devices through Contact Area Patterning

Joshua T. Smith;Aaron D. Franklin;Damon B. Farmer;Christos D. Dimitrakopoulos

278
Citations
Carbon nanotube transistors scaled to a 40-nanometer footprint

Qing Cao;Jerry Tersoff;Damon B. Farmer;Yu Zhu

261
Citations
Graphene plasmon enhanced vibrational sensing of surface-adsorbed layers.

Yilei Li;Yilei Li;Hugen Yan;Damon B. Farmer;Xiang Meng

255
Citations