World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
45
Citations
7168
World Ranking
3596
National Ranking
571

Sheng Wang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sheng Wang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 158 publications — 16th percentile

16% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Sheng Wang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sheng Wang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 45 D-Index — 50th percentile

50% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Sheng Wang is affiliated with Peking University in China and conducts research primarily in the fields of Engineering and Materials Science. Their work spans several subfields, notably Electrical and Electronic Engineering, Materials Chemistry, Organic Chemistry, Biomedical Engineering, and Electronic, Optical and Magnetic Materials.

The scientist's research topics cover a diverse range related to chemistry and materials science. These include:

  • Synthesis and Properties of Aromatic Compounds
  • Advanced Battery Materials and Technologies
  • Advancements in Battery Materials
  • Photonic and Optical Devices
  • Polydiacetylene-based materials and applications
  • Graphene research and applications
  • Quantum Dots Synthesis And Properties

Sheng Wang has published research articles in a variety of scientific venues. Frequent publication forums include:

  • arXiv (Cornell University)
  • Angewandte Chemie International Edition
  • ACS Nano
  • Angewandte Chemie
  • SSRN Electronic Journal

Significant recent papers authored or co-authored by Sheng Wang are:

  • Brightening up Circularly Polarized Luminescence of Monosubstituted Polyacetylene by Conformation Control: Mechanism, Switching, and Sensing (2021), Angewandte Chemie International Edition
  • Study on In Situ Stress Distribution Law of the Deep Mine: Taking Linyi Mining Area as an Example (2021), Advances in Materials Science and Engineering
  • Solar-driven all-solid-state lithium-air batteries operating at extreme low temperatures (2020), Energy & Environmental Science
  • Allostery-Mimicking Self-assembly of Helical Poly(phenylacetylene) Block Copolymers and the Chirality Transfer (2021), Angewandte Chemie International Edition
  • Mesoscopic sliding ferroelectricity enabled photovoltaic random access memory for material-level artificial vision system (2022), Nature Communications

Collaborations form an important part of the scientist's work, with frequent co-authors including Jie Zhang, Xinhua Wan, Hucheng Song, Xiang Cai, and Weifeng Wu.

Best Publications

  • Doping-Free Fabrication of Carbon Nanotube Based Ballistic CMOS Devices and Circuits

    Zhiyong Zhang;Xuelei Liang;Sheng Wang;Kun Yao

  • Carbon nanotube electronics: recent advances

    Lian-Mao Peng;Zhiyong Zhang;Sheng Wang

  • Self-retracting motion of graphite microflakes.

    Quanshui Zheng;Bo Jiang;Shoupeng Liu;Yuxiang Weng

  • Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene

    Boya Dai;Lei Fu;Zhiyu Zou;Min Wang

  • CMOS-based carbon nanotube pass-transistor logic integrated circuits.

    Li Ding;Zhiyong Zhang;Shibo Liang;Tian Pei

  • Self-Aligned Ballistic n-Type Single-Walled Carbon Nanotube Field-Effect Transistors with Adjustable Threshold Voltage

    Zhiyong Zhang;Sheng Wang;Li Ding;Xuelei Liang

  • Growth and Performance of Yttrium Oxide as an Ideal High-κ Gate Dielectric for Carbon-Based Electronics

    Zhenxing Wang;Huilong Xu;Zhiyong Zhang;Sheng Wang

  • Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors: scaling and comparison with Sc-contacted devices.

    Li Ding;Sheng Wang;Zhiyong Zhang;Qingsheng Zeng

  • Quantum capacitance limited vertical scaling of graphene field-effect transistor.

    Huilong Xu;Zhiyong Zhang;Zhenxing Wang;Sheng Wang

  • Efficient photovoltage multiplication in carbon nanotubes

    Leijing Yang;Sheng Wang;Qingsheng Zeng;Zhiyong Zhang

  • A high-performance top-gate graphene field-effect transistor based frequency doubler

    Zhenxing Wang;Zhiyong Zhang;Huilong Xu;Li Ding

  • High-performance photodetectors for visible and near-infrared lights based on individual WS2 nanotubes

    Chaoying Zhang;Sheng Wang;Leijing Yang;Yang Liu

  • Optical and Electrical Performance of SnO2 Capped ZnO Nanowire Arrays

    Liang Shi;Yeming Xu;Suikong Hark;Yang Liu

  • High-Performance Carbon Nanotube Light-Emitting Diodes with Asymmetric Contacts

    Sheng Wang;Qingsheng Zeng;Leijing Yang;Zhiyong Zhang

  • Top-Gated Graphene Field-Effect Transistors with High Normalized Transconductance and Designable Dirac Point Voltage

    Huilong Xu;Zhiyong Zhang;Haitao Xu;Zhenxing Wang

  • Almost perfectly symmetric SWCNT-based CMOS devices and scaling.

    Zhiyong Zhang;Sheng Wang;Zhenxing Wang;Li Ding

  • Carbon nanotube arrays based high-performance infrared photodetector [Invited]

    Qingsheng Zeng;Sheng Wang;Leijing Yang;Zhenxing Wang

  • Batch-fabricated high-performance graphene Hall elements

    Huilong Xu;Zhiyong Zhang;Runbo Shi;Honggang Liu

  • Carbon Nanotube Photoelectronic and Photovoltaic Devices and their Applications in Infrared Detection

    Leijing Yang;Sheng Wang;Qingsheng Zeng;Zhiyong Zhang

  • Establishing Ohmic contacts for in situ current?voltage characteristic measurements on a carbon nanotube inside the scanning electron microscope

    Qing Chen;Sheng Wang;Lian-Mao Peng

Frequent Co-Authors

Lian-Mao Peng
Lian-Mao Peng Peking University
Qing Chen
Qing Chen Peking University
Yan Li
Yan Li Peking University
Jie Liu
Jie Liu Duke University
Zhongfan Liu
Zhongfan Liu Peking University
Yagang Yao
Yagang Yao Nanjing University
Weiya Zhou
Weiya Zhou Chinese Academy of Sciences
Eric Pop
Eric Pop Stanford University
Mark H. Rümmeli
Mark H. Rümmeli Soochow University
Lei Fu
Lei Fu Wuhan University

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