World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
132
Citations
73304
World Ranking
309
National Ranking
124

Mark C. Hersam publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Mark C. Hersam sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 889 publications — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Mark C. Hersam D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Mark C. Hersam sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 132 D-Index — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2017 - Fellow, National Academy of Inventors
  • 2016 - IEEE Fellow For contributions to carbon nanomaterial processing methods and devices
  • 2014 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 2014 - Fellow of the MacArthur Foundation
  • 2012 - SPIE Fellow
  • 2012 - Fellow of American Physical Society (APS) Citation For pioneering research on the fundamentals and applications of nanoelectronic materials, including the development of methods for sorting carbon nanotubes and graphene, and for chemical functionalization of semiconductor surfaces
  • 2012 - Fellow of the Materials Research Society
  • 2005 - Fellow of Alfred P. Sloan Foundation

Overview

Mark C. Hersam is affiliated with Northwestern University in the United States and has contributed extensively to the fields of engineering and materials science. Their research spans multiple subfields, including materials chemistry, electrical and electronic engineering, biomedical engineering, atomic and molecular physics and optics, as well as electronic, optical, and magnetic materials.

The scientist's work addresses a range of topics, with a significant focus on 2D materials and applications, graphene research and applications, advanced memory and neural computing, advancements in battery materials, perovskite materials and applications, advanced battery materials and technologies, and ferroelectric and negative capacitance devices.

Several recent publications highlight the scope of their research:

  • Neuromorphic nanoelectronic materials, 2020, Nature Nanotechnology
  • Bimolecularly passivated interface enables efficient and stable inverted perovskite solar cells, 2023, Science
  • Crystallography, Morphology, Electronic Structure, and Transport in Non-Fullerene/Non-Indacenodithienothiophene Polymer:Y6 Solar Cells, 2020, Journal of the American Chemical Society
  • Thermally conductive ultra-low-k dielectric layers based on two-dimensional covalent organic frameworks, 2021, Nature Materials
  • Humidity Sensing through Reversible Isomerization of a Covalent Organic Framework, 2020, Journal of the American Chemical Society

Frequent co-authors of Mark C. Hersam include Vinod K. Sangwan, Tobin J. Marks, Michael J. Bedzyk, Vinayak P. Dravid, and Julia R. Downing. These collaborations have contributed to an extensive body of work published in notable venues.

Among the common publication venues are ACS Nano, ACS Applied Materials & Interfaces, Advanced Materials, arXiv (Cornell University), and ECS Meeting Abstracts.

Mark C. Hersam has been recognized by several professional organizations through fellowships. These include the National Academy of Inventors (2017), IEEE (2016) for contributions to carbon nanomaterial processing methods and devices, the American Association for the Advancement of Science (AAAS) (2014), the MacArthur Foundation (2014), the Materials Research Society (2012), the American Physical Society (APS) (2012) for pioneering research on nanoelectronic materials, SPIE (2012), and the Alfred P. Sloan Foundation (2005).

Best Publications

  • Sorting carbon nanotubes by electronic structure using density differentiation

    Michael S. Arnold;Alexander A. Green;James F. Hulvat;Samuel I. Stupp

  • Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

    Deep Jariwala;Vinod K. Sangwan;Lincoln J. Lauhon;Tobin J. Marks

  • Synthesis of borophenes: Anisotropic, two-dimensional boron polymorphs

    Andrew J. Mannix;Andrew J. Mannix;Xiang Feng Zhou;Xiang Feng Zhou;Brian Kiraly;Brian Kiraly;Joshua D. Wood

  • Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

    Joshua D. Wood;Spencer A. Wells;Deep Jariwala;Kan Sheng Chen

  • Mixed-dimensional van der Waals heterostructures

    Deep Jariwala;Tobin J. Marks;Mark C. Hersam

  • Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing

    Deep Jariwala;Vinod K. Sangwan;Lincoln J. Lauhon;Tobin J. Marks

  • Diverse Applications of Nanomedicine

    Beatriz Pelaz;Christoph Alexiou;Ramon A. Alvarez-Puebla;Frauke Alves;Frauke Alves

  • Progress towards monodisperse single-walled carbon nanotubes

    Mark C. Hersam

  • Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

    Vinod K. Sangwan;Hong Sub Lee;Hadallia Bergeron;Itamar Balla

  • Solution Phase Production of Graphene with Controlled Thickness via Density Differentiation

    Alexander A. Green;Mark C. Hersam

  • Synthesis and chemistry of elemental 2D materials

    Andrew J. Mannix;Andrew J. Mannix;Brian Kiraly;Brian Kiraly;Mark C. Hersam;Nathan P. Guisinger

  • Covalent functionalization and passivation of exfoliated black phosphorus via aryl diazonium chemistry

    Christopher R. Ryder;Joshua D. Wood;Spencer A. Wells;Yang Yang

  • Neuromorphic nanoelectronic materials

    Vinod K. Sangwan;Mark C. Hersam

  • Current Saturation and Electrical Breakdown in Multiwalled Carbon Nanotubes

    Philip G. Collins;M. Hersam;M. Arnold;R. Martel

  • Inkjet Printing of High Conductivity, Flexible Graphene Patterns

    Ethan B. Secor;Pradyumna L. Prabhumirashi;Kanan Puntambekar;Michael L. Geier

  • Solvent exfoliation of electronic-grade, two-dimensional black phosphorus

    Joohoon Kang;Joshua D. Wood;Spencer A. Wells;Jae Hyeok Lee

  • Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors.

    Shumao Cui;Haihui Pu;Spencer A. Wells;Zhenhai Wen

  • Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

    Vinod K. Sangwan;Deep Jariwala;In Soo Kim;Kan Sheng Chen

  • Three-dimensional printing of high-content graphene scaffolds for electronic and biomedical applications.

    Adam E. Jakus;Ethan B. Secor;Alexandra L. Rutz;Sumanas W. Jordan

  • Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

    Deep Jariwala;Vinod K. Sangwan;Lincoln J. Lauhon;Tobin J. Marks

  • Enrichment of single-walled carbon nanotubes by diameter in density gradients.

    Michael S. Arnold;Samuel I. Stupp;Mark C. Hersam

  • Minimizing Graphene Defects Enhances Titania Nanocomposite-Based Photocatalytic Reduction of CO2 for Improved Solar Fuel Production

    Yu Teng Liang;Baiju K. Vijayan;Kimberly A. Gray;Mark C. Hersam

  • Colloidal Properties and Stability of Graphene Oxide Nanomaterials in the Aquatic Environment

    Indranil Chowdhury;Matthew C. Duch;Nikhita D. Mansukhani;Mark C. Hersam

Frequent Co-Authors

Tobin J. Marks
Tobin J. Marks Northwestern University
Alexander A. Green
Alexander A. Green Boston University
Vinod K. Sangwan
Vinod K. Sangwan Northwestern University
Michael J. Bedzyk
Michael J. Bedzyk Northwestern University
Deep Jariwala
Deep Jariwala University of Pennsylvania
Lincoln J. Lauhon
Lincoln J. Lauhon Northwestern University
Richard P. Van Duyne
Richard P. Van Duyne Northwestern University
Michael S. Arnold
Michael S. Arnold University of Wisconsin–Madison
Paul S. Weiss
Paul S. Weiss University of California, Los Angeles
Andre E. Nel
Andre E. Nel University of California, Los Angeles

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