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Vinod K. Sangwan publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Vinod K. Sangwan sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

The last bar groups every scientist with 1,163 publications or more.

Vinod K. Sangwan D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Vinod K. Sangwan sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

The last bar groups every scientist with 165 D-Index or more.

Overview

Vinod K. Sangwan is affiliated with Northwestern University in the United States. Their research spans several interconnected fields, primarily focusing on Engineering and Materials Science. Within these broader areas, they have contributed extensively to subfields such as Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Cellular and Molecular Neuroscience, and Artificial Intelligence.

The scientist's work covers a range of advanced topics, including 2D Materials and Applications, Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Perovskite Materials and Applications, Organic Electronics and Photovoltaics, Conducting Polymers and Applications, and Graphene Research and Applications.

Among their recent papers are:

  • "Neuromorphic nanoelectronic materials," 2020, published in Nature Nanotechnology
  • "Bimolecularly passivated interface enables efficient and stable inverted perovskite solar cells," 2023, published in Science
  • "Crystallography, Morphology, Electronic Structure, and Transport in Non-Fullerene/Non-Indacenodithienothiophene Polymer:Y6 Solar Cells," 2020, published in Journal of the American Chemical Society
  • "Thermally conductive ultra-low-k dielectric layers based on two-dimensional covalent organic frameworks," 2021, published in Nature Materials
  • "Systematic Merging of Nonfullerene Acceptor π-Extension and Tetrafluorination Strategies Affords Polymer Solar Cells with >16% Efficiency," 2021, published in Journal of the American Chemical Society

Frequent co-authors include Mark C. Hersam, Tobin J. Marks, Antonio Facchetti, Stephanie E. Liu, and George C. Schatz.

Vinod K. Sangwan has published multiple articles in prominent venues such as Advanced Materials, Journal of the American Chemical Society, Advanced Functional Materials, Nano Letters, and ACS Nano.

Best Publications

  • Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

    Deep Jariwala;Vinod K. Sangwan;Lincoln J. Lauhon;Tobin J. Marks

  • Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

    Joshua D. Wood;Spencer A. Wells;Deep Jariwala;Kan Sheng Chen

  • Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing

    Deep Jariwala;Vinod K. Sangwan;Lincoln J. Lauhon;Tobin J. Marks

  • Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

    Vinod K. Sangwan;Hong Sub Lee;Hadallia Bergeron;Itamar Balla

  • Neuromorphic nanoelectronic materials

    Vinod K. Sangwan;Mark C. Hersam

  • Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

    Vinod K. Sangwan;Deep Jariwala;In Soo Kim;Kan Sheng Chen

  • Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

    Deep Jariwala;Vinod K. Sangwan;Lincoln J. Lauhon;Tobin J. Marks

  • Bimolecularly passivated interface enables efficient and stable inverted perovskite solar cells

    Unknown

  • Gate-tunable carbon nanotube–MoS2 heterojunction p-n diode

    Deep Jariwala;Vinod K. Sangwan;Chung Chiang Wu;Pradyumna L. Prabhumirashi

  • Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors

    Deep Jariwala;Vinod K. Sangwan;Dattatray J. Late;Dattatray J. Late;James E. Johns

  • Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors

    Deep Jariwala;Vinod K. Sangwan;Dattatray J. Late;James E. Johns

  • Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS2

    In Soo Kim;Vinod K. Sangwan;Deep Jariwala;Joshua D. Wood

  • Hybrid, Gate-Tunable, van der Waals p–n Heterojunctions from Pentacene and MoS2

    Deep Jariwala;Sarah L. Howell;Kan Sheng Chen;Junmo Kang

  • Crystallography, Morphology, Electronic Structure, and Transport in Non-Fullerene/Non-Indacenodithienothiophene Polymer:Y6 Solar Cells.

    Weigang Zhu;Austin P. Spencer;Subhrangsu Mukherjee;Joaquin M. Alzola

  • Low-frequency electronic noise in single-layer MoS2 transistors.

    Vinod K. Sangwan;Heather N. Arnold;Deep Jariwala;Tobin J. Marks

  • Elucidating the Photoresponse of Ultrathin MoS2 Field-Effect Transistors by Scanning Photocurrent Microscopy

    Chung Chiang Wu;Deep Jariwala;Vinod K. Sangwan;Tobin J. Marks

  • Electronic Transport in Two-Dimensional Materials

    Vinod K. Sangwan;Mark C. Hersam

  • Thermally conductive ultra-low-k dielectric layers based on two-dimensional covalent organic frameworks.

    Austin M. Evans;Ashutosh Giri;Ashutosh Giri;Vinod K. Sangwan;Sangni Xun;Sangni Xun

  • Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS$_{2}$

    In Soo Kim;Vinod K. Sangwan;Deep Jariwala;Joshua D. Wood

  • Ultrafast Exciton Dissociation and Long-Lived Charge Separation in a Photovoltaic Pentacene–MoS2 van der Waals Heterojunction

    Stephanie Bettis Homan;Vinod K. Sangwan;Itamar Balla;Hadallia Bergeron

  • Solution-Based Processing of Monodisperse Two-Dimensional Nanomaterials

    Joohoon Kang;Vinod K. Sangwan;Joshua D. Wood;Mark C. Hersam

  • Fundamental Performance Limits of Carbon Nanotube Thin-Film Transistors Achieved Using Hybrid Molecular Dielectrics

    Vinod K. Sangwan;Rocio Ponce Ortiz;Justice M. P. Alaboson;Jonathan D. Emery

  • Systematic Merging of Nonfullerene Acceptor π-Extension and Tetrafluorination Strategies Affords Polymer Solar Cells with >16% Efficiency.

    Guoping Li;Xiaohua Zhang;Xiaohua Zhang;Leighton O. Jones;Joaquin M. Alzola

  • Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems.

    Xiaodong Yan;Justin H Qian;Vinod K Sangwan;Mark C Hersam

  • Fully Inkjet-Printed, Mechanically Flexible MoS2 Nanosheet Photodetectors

    Jung Woo Ted Seo;Jian Zhu;Jian Zhu;Vinod K. Sangwan;Ethan B. Secor;Ethan B. Secor

  • Non-Fullerene Acceptors with Direct and Indirect Hexa-fluorination Afford >17% Efficiency in Polymer Solar Cells

    Unknown

  • Dual-Gated MoS2 Memtransistor Crossbar Array

    Hong Sub Lee;Hong Sub Lee;Vinod K. Sangwan;William A.Gaviria Rojas;Hadallia Bergeron

  • Solution-Based Processing of Optoelectronically Active Indium Selenide.

    Joohoon Kang;Spencer A. Wells;Vinod K. Sangwan;David Lam

Frequent Co-Authors

Mark C. Hersam
Mark C. Hersam Northwestern University
Tobin J. Marks
Tobin J. Marks Northwestern University
Lincoln J. Lauhon
Lincoln J. Lauhon Northwestern University
Deep Jariwala
Deep Jariwala University of Pennsylvania
Ellen D. Williams
Ellen D. Williams University of Maryland, College Park
Michael S. Fuhrer
Michael S. Fuhrer Monash University
Antonio Facchetti
Antonio Facchetti Northwestern University
Vinayak P. Dravid
Vinayak P. Dravid Northwestern University
Michael J. Bedzyk
Michael J. Bedzyk Northwestern University
Zdeněk Sofer
Zdeněk Sofer University of Chemistry and Technology

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