World's Best Scientists 2026 revealed!

Overview

Vinod K. Sangwan is affiliated with Northwestern University in the United States. Their research spans several interconnected fields, primarily focusing on Engineering and Materials Science. Within these broader areas, they have contributed extensively to subfields such as Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Cellular and Molecular Neuroscience, and Artificial Intelligence.

The scientist's work covers a range of advanced topics, including 2D Materials and Applications, Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Perovskite Materials and Applications, Organic Electronics and Photovoltaics, Conducting Polymers and Applications, and Graphene Research and Applications.

Among their recent papers are:

  • "Neuromorphic nanoelectronic materials," 2020, published in Nature Nanotechnology
  • "Bimolecularly passivated interface enables efficient and stable inverted perovskite solar cells," 2023, published in Science
  • "Crystallography, Morphology, Electronic Structure, and Transport in Non-Fullerene/Non-Indacenodithienothiophene Polymer:Y6 Solar Cells," 2020, published in Journal of the American Chemical Society
  • "Thermally conductive ultra-low-k dielectric layers based on two-dimensional covalent organic frameworks," 2021, published in Nature Materials
  • "Systematic Merging of Nonfullerene Acceptor π-Extension and Tetrafluorination Strategies Affords Polymer Solar Cells with >16% Efficiency," 2021, published in Journal of the American Chemical Society

Frequent co-authors include Mark C. Hersam, Tobin J. Marks, Antonio Facchetti, Stephanie E. Liu, and George C. Schatz.

Vinod K. Sangwan has published multiple articles in prominent venues such as Advanced Materials, Journal of the American Chemical Society, Advanced Functional Materials, Nano Letters, and ACS Nano.

Best Publications

  • Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

    Deep Jariwala;Vinod K. Sangwan;Lincoln J. Lauhon;Tobin J. Marks

  • Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

    Joshua D. Wood;Spencer A. Wells;Deep Jariwala;Kan Sheng Chen

  • Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing

    Deep Jariwala;Vinod K. Sangwan;Lincoln J. Lauhon;Tobin J. Marks

  • Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

    Vinod K. Sangwan;Hong Sub Lee;Hadallia Bergeron;Itamar Balla

  • Neuromorphic nanoelectronic materials

    Vinod K. Sangwan;Mark C. Hersam

  • Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

    Vinod K. Sangwan;Deep Jariwala;In Soo Kim;Kan Sheng Chen

  • Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

    Deep Jariwala;Vinod K. Sangwan;Lincoln J. Lauhon;Tobin J. Marks

  • Bimolecularly passivated interface enables efficient and stable inverted perovskite solar cells

    Unknown

  • Gate-tunable carbon nanotube–MoS2 heterojunction p-n diode

    Deep Jariwala;Vinod K. Sangwan;Chung Chiang Wu;Pradyumna L. Prabhumirashi

  • Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors

    Deep Jariwala;Vinod K. Sangwan;Dattatray J. Late;Dattatray J. Late;James E. Johns

  • Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors

    Deep Jariwala;Vinod K. Sangwan;Dattatray J. Late;James E. Johns

  • Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS2

    In Soo Kim;Vinod K. Sangwan;Deep Jariwala;Joshua D. Wood

  • Hybrid, Gate-Tunable, van der Waals p–n Heterojunctions from Pentacene and MoS2

    Deep Jariwala;Sarah L. Howell;Kan Sheng Chen;Junmo Kang

  • Crystallography, Morphology, Electronic Structure, and Transport in Non-Fullerene/Non-Indacenodithienothiophene Polymer:Y6 Solar Cells.

    Weigang Zhu;Austin P. Spencer;Subhrangsu Mukherjee;Joaquin M. Alzola

  • Low-frequency electronic noise in single-layer MoS2 transistors.

    Vinod K. Sangwan;Heather N. Arnold;Deep Jariwala;Tobin J. Marks

  • Elucidating the Photoresponse of Ultrathin MoS2 Field-Effect Transistors by Scanning Photocurrent Microscopy

    Chung Chiang Wu;Deep Jariwala;Vinod K. Sangwan;Tobin J. Marks

  • Electronic Transport in Two-Dimensional Materials

    Vinod K. Sangwan;Mark C. Hersam

  • Thermally conductive ultra-low-k dielectric layers based on two-dimensional covalent organic frameworks.

    Austin M. Evans;Ashutosh Giri;Ashutosh Giri;Vinod K. Sangwan;Sangni Xun;Sangni Xun

  • Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS$_{2}$

    In Soo Kim;Vinod K. Sangwan;Deep Jariwala;Joshua D. Wood

  • Ultrafast Exciton Dissociation and Long-Lived Charge Separation in a Photovoltaic Pentacene–MoS2 van der Waals Heterojunction

    Stephanie Bettis Homan;Vinod K. Sangwan;Itamar Balla;Hadallia Bergeron

  • Solution-Based Processing of Monodisperse Two-Dimensional Nanomaterials

    Joohoon Kang;Vinod K. Sangwan;Joshua D. Wood;Mark C. Hersam

  • Fundamental Performance Limits of Carbon Nanotube Thin-Film Transistors Achieved Using Hybrid Molecular Dielectrics

    Vinod K. Sangwan;Rocio Ponce Ortiz;Justice M. P. Alaboson;Jonathan D. Emery

  • Systematic Merging of Nonfullerene Acceptor π-Extension and Tetrafluorination Strategies Affords Polymer Solar Cells with >16% Efficiency.

    Guoping Li;Xiaohua Zhang;Xiaohua Zhang;Leighton O. Jones;Joaquin M. Alzola

  • Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems.

    Xiaodong Yan;Justin H Qian;Vinod K Sangwan;Mark C Hersam

  • Fully Inkjet-Printed, Mechanically Flexible MoS2 Nanosheet Photodetectors

    Jung Woo Ted Seo;Jian Zhu;Jian Zhu;Vinod K. Sangwan;Ethan B. Secor;Ethan B. Secor

  • Non-Fullerene Acceptors with Direct and Indirect Hexa-fluorination Afford >17% Efficiency in Polymer Solar Cells

    Unknown

  • Dual-Gated MoS2 Memtransistor Crossbar Array

    Hong Sub Lee;Hong Sub Lee;Vinod K. Sangwan;William A.Gaviria Rojas;Hadallia Bergeron

  • Solution-Based Processing of Optoelectronically Active Indium Selenide.

    Joohoon Kang;Spencer A. Wells;Vinod K. Sangwan;David Lam

Frequent Co-Authors

Mark C. Hersam
Mark C. Hersam Northwestern University
Tobin J. Marks
Tobin J. Marks Northwestern University
Lincoln J. Lauhon
Lincoln J. Lauhon Northwestern University
Deep Jariwala
Deep Jariwala University of Pennsylvania
Ellen D. Williams
Ellen D. Williams University of Maryland, College Park
Michael S. Fuhrer
Michael S. Fuhrer Monash University
Antonio Facchetti
Antonio Facchetti Northwestern University
Vinayak P. Dravid
Vinayak P. Dravid Northwestern University
Michael J. Bedzyk
Michael J. Bedzyk Northwestern University
Zdeněk Sofer
Zdeněk Sofer University of Chemistry and Technology

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